MAC12SM_05 [ONSEMI]
Sensitive Gate Triacs Silicon Bidirectional Thyristors; 敏感的门双向可控硅硅双向晶闸管
| 型号： | MAC12SM_05 |
| 厂家： | 
ONSEMI |
| 描述： | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| 文件： | 总5页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAC12SM, MAC12SN
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of AC loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
http://onsemi.com
Features
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
• Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits
• Blocking Voltage to 800 Volts
• On-State Current Rating of 12 Amperes RMS at 70°C
• High Surge Current Capability − 90 Amperes
• Rugged, Economical TO−220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Maximum Values of I , V and I Specified for Ease of Design
• High Commutating di/dt − 8.0 A/ms Minimum at 110°C
• Immunity to dV/dt − 15 V/msec Minimum at 110°C
• Operational in Three Quadrants: Q1, Q2, and Q3
• Pb−Free Packages are Available*
MT2
MT1
G
MARKING
DIAGRAM
GT GT
H
MAC12SxG
AYWW
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
TO−220AB
CASE 221A−09
STYLE 4
Rating
Symbol
Value
Unit
1
2
Peak Repetitive Off−State Voltage (Note 1)
(T = −40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
V
V
DRM,
3
V
J
RRM
MAC12SM
MAC12SN
600
800
x
= M, or N
A
Y
= Assembly Location
= Year
On-State RMS Current
(All Conduction Angles; T = 70°C)
I
12
A
A
T(RMS)
C
WW = Work Week
G
= Pb−Free Package
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
I
TSM
90
T = 110°C)
J
PIN ASSIGNMENT
2
2
Circuit Fusing Consideration (t = 8.33 ms)
I t
33
16
A sec
1
Main Terminal 1
Peak Gate Power
(Pulse Width = 1.0 msec, T = 70°C)
P
W
W
GM
2
3
4
Main Terminal 2
Gate
C
Average Gate Power
(t = 8.3 msec, T = 70°C)
P
0.35
G(AV)
C
Main Terminal 2
Operating Junction Temperature Range
Storage Temperature Range
T
−40 to 110
−40 to 150
°C
°C
J
T
stg
ORDERING INFORMATION
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Device
Package
Shipping
MAC12SM
TO−220AB
50 Units / Rail
50 Units / Rail
MAC12SMG
TO−220AB
(Pb−Free)
1. (V
and V
for all types can be applied on a continuous basis. Blocking
DRM
RRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
MAC12SN
TO−220AB
50 Units / Rail
50 Units / Rail
MAC12SNG
TO−220AB
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
December, 2005 − Rev. 3
MAC12SM/D
MAC12SM, MAC12SN
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
R
R
2.2
62.5
°C/W
q
JC
JA
q
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
260
°C
L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
I
I
,
mA
DRM
−
−
−
−
0.01
2.0
(V = Rated V , V
DRM
; Gate Open)
RRM
T = 25°C
T = 110°C
J
RRM
D
J
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
V
−
−
1.85
V
TM
(I 17 A)
=
TM
Gate Trigger Current (Continuous dc) (V = 12 V, R = 100 W)
I
mA
D
L
GT
−
−
−
1.5
2.5
2.7
5.0
5.0
5.0
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Holding Current
(V = 12 V, Gate Open, Initiating Current = 200 mA)
D
I
−
2.5
10
mA
mA
H
Latching Current (V = 12 V, I = 5 mA)
I
D
G
L
−
−
−
3.0
5.0
3.0
15
20
15
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100 W)
V
V
D
L
GT
0.45
0.45
0.45
0.68
0.62
0.67
1.5
1.5
1.5
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
DYNAMIC CHARACTERISTICS
Critical Rate of Change of Commutating Current
(V = 400 V, I = 3.5 A, Commutating dV/dt = 10 V/ms, Gate Open, T = 110°C,
(di/dt)
8.0
10
−
A/ms
c
D
TM
J
f = 500 Hz, Snubber: Cs = 0.01 mf, Rs = 15 W)
Critical Rate of Rise of Off-State Voltage
dV/dt
di/dt
15
−
40
−
−
V/ms
A/ms
(V = 67% V
D
, Exponential Waveform, R = 1 KW, T = 110°C)
DRM GK J
Repetitive Critical Rate of Rise of On-State Current
10
IPK = 50 A; PW = 40 msec; diG/dt = 1 A/msec; Igt = 100 mA; f = 60 Hz
2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
Parameter
V
TM
V
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
DRM
on state
I
I
H
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
I
RRM
V
Maximum On State Voltage
Holding Current
+ Voltage
off state
TM
I
I
at V
H
DRM
DRM
I
H
Quadrant 3
MainTerminal 2 −
V
TM
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2
MAC12SM, MAC12SN
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(−) I
(+) I
GT
GT
GATE
GATE
MT1
MT1
REF
REF
I
−
+ I
GT
GT
(−) MT2
(−) MT2
Quadrant III
Quadrant IV
(+) I
(−) I
GT
GT
GATE
GATE
MT1
REF
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
0.90
Q1
0.85
100
10
0.80
Q3
Q2
0.75
0.70
Q2
Q3
Q1
0.65
0.60
0.55
0.50
1
0.45
0.40
0.1
−40 −25 −10
5
20 35 50 65 80 95 110
−40 −25 −10
5
20 35
50 65 80
95 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
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3
MAC12SM, MAC12SN
100
100
10
Q1
10
Q2
Q3
MT2 Positive
MT2 Negative
1
1
0.1
0.1
−40 −25 −10
5
20 35 50 65 80 95 110
−40 −25 −10
5
20 35 50 65 80 95 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 4. Typical Holding Current
versus Junction Temperature
Figure 3. Typical Latching Current
versus Junction Temperature
25
20
15
10
110
100
90
DC
180°
120°
30°, 60°
90°
60°
90°
80
30°
180°
70
60
5
0
DC
0
2
4
6
8
10
12
0
2
4
6
8
10
12
I
, RMS ON-STATE CURRENT (AMPS)
T(RMS)
I , AVERAGE ON-STATE CURRENT (AMPS)
T(AV)
Figure 5. Typical RMS Current Derating
Figure 6. On-State Power Dissipation
100
1
Typical @ T = 25°C
J
Maximum @ T = 110°C
J
Maximum @ T = 25°C
J
10
0.1
1
0.01
0.1
1
10
100
1000
10000
t, TIME (ms)
Figure 8. Typical Thermal Response
0.1
0.5
1.5
2.5
3.5
4.5
V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
Figure 7. Typical On-State Characteristics
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4
MAC12SM, MAC12SN
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
1
2
3
U
H
G
H
J
K
L
L
R
J
N
Q
R
S
T
V
G
D
U
V
Z
N
−−− 0.080
2.04
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
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MAC12SM/D
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