MAC15M [ONSEMI]
Triacs Silicon Bidirectional Thyristors; 双向晶闸管硅双向晶闸管
| 型号： | MAC15M |
| 厂家： | 
ONSEMI |
| 描述： | Triacs Silicon Bidirectional Thyristors |
| 文件： | 总6页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAC15M, MAC15N
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave AC control applications
where high noise immunity and high commutating di/dt are required.
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Features
• Blocking Voltage to 800 Volts
TRIACS
• On-State Current Rating of 15 Amperes RMS at 80°C
• Uniform Gate Trigger Currents in Three Modes
• High Immunity to dv/dt − 250 V/ms minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
15 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
• High Commutating di/dt − 9.0 A/ms minimum at 125°C
• Operational in Three Quadrants, Q1, Q2, and Q3
• Pb−Free Packages are Available*
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
MAC15xG
AYWW
Peak Repetitive Off−State Voltage (Note 1)
V
V
V
DRM,
RRM
(−40 to 125°C, Sine Wave, 50 to 60 Hz,
Gate Open)
MAC15M
MAC15N
600
800
TO−220AB
CASE 221A−09
STYLE 4
1
2
3
On−State RMS Current
I
15
A
A
T(RMS)
(Full Cycle Sine Wave, 60 Hz, T = 80°C)
C
x
A
Y
= M or N
Peak Non-repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T = 125°C)
J
I
150
TSM
= Assembly Location
= Year
WW = Work Week
2
2
Circuit Fusing Consideration (t = 8.3 ms)
I t
93
20
A s
G
= Pb−Free Package
Peak Gate Power
P
W
W
GM
(Pulse Width ≤ 1.0 ms, T = 80°C)
C
PIN ASSIGNMENT
Average Gate Power
P
0.5
G(AV)
1
Main Terminal 1
(t = 8.3 ms, T = 80°C)
C
2
3
4
Main Terminal 2
Gate
Operating Junction Temperature Range
Storage Temperature Range
T
−40 to +125
−40 to +150
°C
°C
J
T
stg
Main Terminal 2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ORDERING INFORMATION
1. V
and V
for all types can be applied on a continuous basis. Blocking
DRM
RRM
Device
Package
Shipping
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
MAC15M
TO−220AB
50 Units / Rail
50 Units / Rail
MAC15MG
TO−220AB
(Pb−Free)
MAC15N
TO−220AB
50 Units / Rail
50 Units / Rail
MAC15NG
TO−220AB
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
December, 2005 − Rev. 2
MAC15M/D
MAC15M, MAC15N
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Case
Thermal ResistanceJunction−to−Ambient
R
R
2.0
62.5
°C/W
q
JC
JA
q
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
260
°C
L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
I
,
mA
DRM
(V = Rated V
, V
DRM
; Gate Open)
RRM
T = 25°C
T = 125°C
J
I
RRM
−
−
−
−
0.01
2.0
D
J
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(I 21 A Peak)
Gate Trigger Current (Continuous DC) (V = 12 V, R = 100 W)
V
V
TM
=
−
1.2
1.6
TM
I
mA
D
L
GT
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
5.0
5.0
5.0
13
16
18
35
35
35
Hold Current
I
mA
mA
H
(V = 12 Vdc, Gate Open, Initiating Current = 150 mA)
D
−
20
40
Latching Current (V = 24 V, I = 35 mA)
I
D
G
L
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
−
−
−
33
36
33
50
80
50
Gate Trigger Voltage (V = 12 V, R = 100 W)
V
V
D
L
GT
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
0.5
0.5
0.5
0.75
0.72
0.82
1.5
1.5
1.5
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current; See Figure 10.
(V = 400 V, I = 6.0 A, Commutating dv/dt = 24 V/ms,
(di/dt)
dv/dt
9.0
−
−
−
−
A/ms
c
C = 10 mF
L = 40 mH
L
D
TM
L
Gate Open, T = 125°C, f = 250 Hz, No Snubber)
J
Critical Rate of Rise of Off-State Voltage
250
V/ms
(V = Rated V
, Exponential Waveform, Gate Open, T = 125°C)
DRM J
D
2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
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2
MAC15M, MAC15N
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
Parameter
V
TM
V
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
DRM
on state
I
I
H
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
I
RRM
V
Maximum On State Voltage
Holding Current
+ Voltage
off state
TM
I
I
at V
H
DRM
DRM
I
H
Quadrant 3
MainTerminal 2 −
V
TM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(−) I
(+) I
GT
GT
GATE
GATE
MT1
MT1
REF
REF
I
−
+ I
GT
GT
(−) MT2
(−) MT2
Quadrant III
Quadrant IV
(+) I
(−) I
GT
GT
GATE
GATE
MT1
REF
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
MAC15M, MAC15N
125
120
115
110
105
100
95
20
18
16
DC
180°
120°
90°
α = 30 and 60°
14
12
10
8
60°
α = 90°
α = 180°
α = 120°
α = 30°
6
DC
90
4
85
2
80
0
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
I
, RMS ON-STATE CURRENT (AMP)
I
T(RMS)
, ON-STATE CURRENT (AMP)
T(RMS)
Figure 1. RMS Current Derating
Figure 2. On−State Power Dissipation
100
10
1
1
TYPICAL AT
T = 25°C
MAXIMUM @ T = 125°C
J
J
0.1
0.01
4
0.1
1
10
100
t, TIME (ms)
1000
1ꢀ·ꢀ10
Figure 4. Transient Thermal Response
MAXIMUM @ T = 25°C
40
J
MT2 POSITIVE
MT2 NEGATIVE
0.1
5
−ꢀ40
0
0.5
1
1.5
2
2.5
3
3.5
4
−ꢀ10
20
50
80
110 125
V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On−State Characteristics
Figure 5. Hold Current Variation
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4
−
40
10
20
50
80
110 125
−ꢀ10
+20
50
80
110 125
MAC15M, MAC15N
100
1
OFF-STATE VOLTAGE = 12 V
R = 140 W
L
Q2
Q3
Q1
Q1
Q3
Q2
OFF-STATE VOLTAGE = 12 V
R = 140 W
L
1
−
0.5
−ꢀ40
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Typical Holding Current versus Junction
Temperature
Figure 7. Gate Trigger Voltage versus Junction
Temperature
5000
4K
3K
2K
1K
0
100
V = 800 Vpk
D
T = 125°C
J
T = 125°C
100°C
75°C
J
10
I
TM
1
f =
t
w
2 t
w
6f I
TM
(di/dt)
=
c
1000
V
DRM
1
10
100
1000
10000
10
20
30
40
50
60
70
80
90 100
R , GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
G
(di/dt) , RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
c
Figure 8. Critical Rate of Rise of Off−State Voltage
(Exponential)
Figure 9. Critical Rate of Rise of
Commutating Voltage
L
1N4007
L
200 V
RMS
ADJUST FOR
, 60 Hz V
MEASURE
I
I
TM
AC
CHARGE
CONTROL
−
+
TRIGGER
200 V
CHARGE
MT2
51 W
G
1N914
MT1
NON-POLAR
C
L
Note: Component values are for verification of rated (di/dt) . See AN1048 for additional information.
c
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
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5
MAC15M, MAC15N
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
1
2
3
U
H
G
H
J
K
L
L
R
J
N
Q
R
S
T
V
G
D
U
V
Z
N
−−− 0.080
2.04
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
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MAC15M/D
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