MAC210A10G [ONSEMI]
Triacs Silicon Bidirectional Thyristors; 双向晶闸管硅双向晶闸管
| 型号： | MAC210A10G |
| 厂家： | 
ONSEMI |
| 描述： | Triacs Silicon Bidirectional Thyristors |
| 文件： | 总6页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAC210A8, MAC210A10
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full−wave silicon gate controlled solid−state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
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TRIACS
10 AMPERES RMS
600 thru 800 VOLTS
Features
• Blocking Voltage to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
MT2
MT1
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes (Quadrants)
• Pb−Free Packages are Available*
G
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
V
V
V
DRM,
RRM
(T = −40 to +125°C, Sine Wave 50 to 60 Hz,
J
MAC210AxG
AYWW
Gate Open)
MAC210A8
600
800
MAC210A10
On−State RMS Current (T = +70°C)
I
10
A
A
C
T(RMS)
TO−220AB
CASE 221A−07
STYLE 4
Full Cycle Sine Wave 50 to 60 Hz
1
2
Peak Non−Repetitive Surge Current
(One Full Cycle, Sine Wave 60 Hz,
I
100
3
TSM
T
= +25°C)
C
x
A
Y
= 8 or 10
= Assembly Location
= Year
Preceded and followed by rated current
Circuit Fusing Considerations, (t = 8.3 ms)
Peak Gate Power
2
2
I t
40
20
A s
P
W
W
A
WW = Work Week
G
GM
(T = +70°C, Pulse Width = 10 ms)
= Pb−Free Package
C
Average Gate Power
(T = +70°C, t = 8.3 ms)
P
0.35
2.0
G(AV)
C
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
Peak Gate Current
I
GM
1
(T = +70°C, Pulse Width = 10 ms)
C
2
3
4
Operating Junction Temperature Range
Storage Temperature Range
T
J
−40 to +125 °C
−40 to +150 °C
T
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Main Terminal 2
ORDERING INFORMATION
1. V
and V
for all types can be applied on a continuous basis. Blocking
DRM
RRM
Device
Package
Shipping
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
MAC210A8
TO−220AB
500 Units/Box
500 Units/Box
MAC210A8G
TO−220AB
(Pb−Free)
MAC210A10
TO−220AB
500 Units/Box
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MAC210A10G
TO−220AB
(Pb−Free)
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
December, 2005 − Rev. 2
MAC210A8/D
MAC210A8, MAC210A10
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient
R
R
2.0
62.5
°C/W
q
q
JC
JA
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
L
260
°C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
I
,
DRM
(V = Rated V
, V
RRM
; Gate Open)
T = 25°C
T = +125°C
J
I
RRM
−
−
−
−
10
2.0
mA
mA
D
DRM
J
ON CHARACTERISTICS
Peak On-State Voltage
V
TM
−
1.2
1.65
V
(I = "14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)
TM
Gate Trigger Current (Continuous dc)
I
mA
GT
(Main Terminal Voltage = 12 Vdc, R = 100 Ohms)
L
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
−
−
−
−
12
12
20
35
50
50
50
75
Gate Trigger Voltage (Continuous dc)
V
GT
V
(Main Terminal Voltage = 12 Vdc, R = 100 W)
L
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
−
−
−
−
0.9
0.9
1.1
1.4
2.0
2.0
2.0
2.5
Gate Non−Trigger Voltage (Continuous dc)
V
GD
0.2
−
−
V
(Main Terminal Voltage = 12 V, R = 100 W, T = +125°C) All Four Quadrants
L
J
Holding Current
I
H
−
6.0
50
mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = "200 mA, T = +25°C)
C
Turn-On Time
t
−
1.5
−
ms
gt
(Rated V , I = 14 A)
DRM TM
(I = 120 mA, Rise Time = 0.1 ms, Pulse Width = 2 ms)
GT
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
dv/dt(c)
dv/dt
−
−
5.0
−
−
V/ms
V/ms
(V = Rated V
, I = 14 A, Commutating di/dt = 5.0 A/ms,
DRM TM
D
Gate Unenergized, T = 70°C)
C
Critical Rate of Rise of Off-State Voltage
100
(V = Rated V
, Exponential Voltage Rise,
D
DRM
Gate Open, T = +70°C)
C
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2
MAC210A8, MAC210A10
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
Parameter
V
TM
V
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
DRM
on state
I
I
H
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
RRM
I
V
Maximum On State Voltage
Holding Current
+ Voltage
off state
TM
I
H
I
at V
DRM
DRM
I
H
Quadrant 3
MainTerminal 2 −
V
TM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(−) I
(+) I
GT
GT
GATE
GATE
MT1
MT1
REF
REF
I
−
+ I
GT
GT
(−) MT2
(−) MT2
Quadrant III
Quadrant IV
(+) I
(−) I
GT
GT
GATE
GATE
MT1
REF
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
MAC210A8, MAC210A10
14.0
130
120
CONDUCTION ANGLE = 360°
CONDUCTION ANGLE = 360°
12.0
10.0
8.0
110
100
6.0
4.0
90
80
2.0
0
70
60
0
1.0
2.0 3.0
4.0
5.0 6.0 7.0
8.0
9.0 10.0
0
1.0
2.0 3.0
4.0
5.0 6.0 7.0
8.0
9.0 10.0
I
, RMS ON-STATE CURRENT (AMPS)
I
, RMS ON-STATE CURRENT (AMPS)
T(RMS)
T(RMS)
Figure 1. Current Derating
Figure 2. Power Dissipation
100
100
80
50
20
10
60
40
20
0
CYCLE
5.0
T
= 70°C
f = 60 Hz
C
T = 25°C
T = 125°C
J
J
2.0
1.0
0.5
Surge is preceded and followed by rated current
1.0
2.0
3.0
5.0
7.0
10
NUMBER OF CYCLES
Figure 4. Maximum Non−Repetitive Surge Current
0.2
0.1
2.0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.6
1.2
0.8
Figure 3. Maximum On−State Characteristics
0.4
0
−60
−40
−20
0
20
40
60
80
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Gate Trigger Voltage
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4
MAC210A8, MAC210A10
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
2.0
1.6
1.2
0.8
0.4
0
−60
−40
−20
0
20
40
60
80
−60
−40
−20
0
20
40
60
80
T , CASE TEMPERATURE (°C)
C
T , CASE TEMPERATURE (°C)
C
Figure 6. Typical Gate Trigger Current
Figure 7. Typical Holding Current
1.0
0.5
0.2
0.1
Z
= r(t) • R
q
q
JC
JC(t)
0.05
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
20
50
100
200
500
1.0 k
2.0 k
5.0 k 10 k
t, TIME (ms)
Figure 8. Thermal Response
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5
MAC210A8, MAC210A10
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−07
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
4
3
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
−−−
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
Q
A
K
1
2
U
H
G
H
J
Z
K
L
N
Q
R
S
T
R
J
L
V
G
U
V
Z
D
0.080
2.04
N
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
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MAC210A8/D
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