MAC212A10 [ONSEMI]
Triacs Silicon Bidirectional Thyristors; 双向晶闸管硅双向晶闸管![MAC212A10](http://pdffile.icpdf.com/pdf1/p00116/img/icpdf/MAC212A10_632848_icpdf.jpg)
型号: | MAC212A10 |
厂家: | ![]() |
描述: | Triacs Silicon Bidirectional Thyristors |
文件: | 总6页 (文件大小:63K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
MAC212A8, MAC212A10
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
http://onsemi.com
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
Features
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
MT2
MT1
Uniformity and Stability
G
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes
MARKING
DIAGRAM
• Pb−Free Packages are Available*
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
MAC212AxG
AYWW
Peak Repetitive Off−State Voltage (Note 1)
(T = −40 to +125°C, Sine Wave 50 to 60 Hz,
V
V
DRM,
V
J
RRM
Gate Open)
MAC212A8
MAC212A10
600
800
TO−220AB
CASE 221A−07
STYLE 4
1
2
3
On-State RMS Current (T = +85°C)
Full Cycle Sine Wave 50 to 60 Hz
I
12
A
A
C
T(RMS)
x
A
Y
= 8 or 10
Peak Non−repetitive Surge Current (One
Full Cycle Sine Wave, 60 Hz, T = +25°C)
Preceded and followed by rated current
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Power
I
100
TSM
= Assembly Location
= Year
C
WW = Work Week
2
2
I t
40
20
A s
G
= Pb−Free Package
P
W
W
A
GM
(T = +85°C, Pulse Width = 10 ms)
C
PIN ASSIGNMENT
Average Gate Power
(T = +85°C, t = 8.3 ms)
P
0.35
2.0
G(AV)
1
Main Terminal 1
C
2
3
4
Main Terminal 2
Gate
Peak Gate Current
(T = +85°C, Pulse Width = 10 ms)
I
GM
C
Main Terminal 2
Operating Junction Temperature Range
Storage Temperature Range
T
−40 to +125 °C
−40 to +150 °C
J
T
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping
MAC212A8D
TO−220AB
500 Units / Box
500 Units / Box
1. V
and V
for all types can be applied on a continuous basis. Blocking
MAC212A8DG
TO−220AB
(Pb−Free)
DRM
RRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
MAC212A10
TO−220AB
500 Units / Box
500 Units / Box
MAC212A10G
TO−220AB
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
December, 2005 − Rev. 2
MAC212A8/D
MAC212A8, MAC212A10
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
r
Junction−to−Case
Junction−to−Ambient
R
R
2.0
62.5
°C/W
q
JC
JA
q
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Secs
T
260
°C
L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
I
I
,
DRM
(V = Rated V , V ; Gate Open)
T = 25°C
D
DRM
RRM
J
RRM
−
−
−
−
10
mA
T = +125°C
J
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage
V
−
1.3
1.75
V
TM
I
= "17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%
TM
Gate Trigger Current (Continuous dc)
I
mA
GT
(Main Terminal Voltage = 12 Vdc, R = 100 W)
L
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
−
−
−
−
12
12
20
35
50
50
50
75
Gate Trigger Voltage (Continuous dc)
V
V
V
GT
(Main Terminal Voltage = 12 Vdc, R = 100 W)
L
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
−
−
−
−
0.9
0.9
1.1
1.4
2.0
2.0
2.0
2.5
Gate Non−Trigger Voltage (Continuous dc)
V
GD
(Main Terminal Voltage = 12 V, R = 100 W, T = +125°C)
L
J
All Four Quadrants
0.2
−
−
−
Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
I
6.0
50
mA
H
Initiating Current = "200 mA)
Turn-On Time
(V = Rated V
D
t
−
1.5
−
ms
gt
, I = 17 A, I = 120 mA,
DRM TM GT
Rise Time = 0.1 ms, Pulse Width = 2 ms)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
dv/dt
−
−
5.0
−
−
V/ms
V/ms
(c)
(V = Rated V
, I = 17 A, Commutating di/dt = 6.1 A/ms,
DRM TM
D
Gate Unenergized, T = +85°C)
C
Critical Rate of Rise of Off-State Voltage
dv/dt
100
(V = Rated V
, Exponential Voltage Rise, Gate Open, T = +85°C)
D
DRM
C
http://onsemi.com
2
MAC212A8, MAC212A10
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
Parameter
V
TM
V
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
DRM
on state
I
I
H
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
I
RRM
V
Maximum On State Voltage
Holding Current
+ Voltage
off state
TM
I
I
at V
H
DRM
DRM
I
H
Quadrant 3
MainTerminal 2 −
V
TM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(−) I
(+) I
GT
GT
GATE
GATE
MT1
MT1
REF
REF
I
−
+ I
GT
GT
(−) MT2
(−) MT2
Quadrant III
Quadrant IV
(+) I
(−) I
GT
GT
GATE
GATE
MT1
REF
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
http://onsemi.com
3
MAC212A8, MAC212A10
125
115
105
95
28
24
α
20
dc
α
α = 30°
α = 180°
90°
60°
α = CONDUCTION ANGLE
16
12
8.0
4.0
0
60°
90°
α
30°
180°
α
85
dc
α = CONDUCTION ANGLE
75
0
2.0
4.0
6.0
8.0
10
12
14
0
2.0
4.0
6.0
8.0
10
12
14
I
, RMS ON-STATE CURRENT (AMP)
I
, RMS ON-STATE CURRENT (AMP)
T(RMS)
T(RMS)
Figure 1. Current Derating
Figure 2. Power Dissipation
100
50
100
80
60
40
20
0
20
10
CYCLE
5.0
T = 70°C
C
f = 60 Hz
T = 25°C
T = 125°C
J
J
2.0
1.0
0.5
Surge is preceded and followed by rated current
1.0
2.0
3.0
5.0
7.0
10
NUMBER OF CYCLES
Figure 4. Maximum Non−Repetitive Surge Current
0.2
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
2.0
1.6
1.2
0.8
V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
MAIN TERMINAL VOLTAGE = 12 Vdc
ALL QUADRANTS
Figure 3. Maximum On−State Voltage
Characteristics
0.4
0
−60
−40
−20
0
20
40
60
80
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Gate Trigger Voltage
http://onsemi.com
4
MAC212A8, MAC212A10
2.8
2.4
2.0
1.6
1.2
MAIN TERMINAL VOLTAGE = 12 Vdc
ALL QUADRANTS
MAIN TERMINAL VOLTAGE = 12 Vdc
ALL QUADRANTS
2.0
1.6
1.2
0.8
0.4
0
0.8
0.4
0
−60
−40
−20
0
20
40
60
80
−60
−40
−20
0
20
40
60
80
T , CASE TEMPERATURE (°C)
C
T , CASE TEMPERATURE (°C)
C
Figure 6. Typical Gate Trigger Current
Figure 7. Typical Holding Current
1.0
0.5
0.2
0.1
Z
= r(t) • R
q
JC(t)
q
JC
0.05
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
20
50
100
200
500
1.0 k
2.0 k
5.0 k 10 k
t, TIME (ms)
Figure 8. Thermal Response
http://onsemi.com
5
MAC212A8, MAC212A10
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−07
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
4
3
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
Q
A
K
1
2
U
H
G
H
J
Z
K
L
N
Q
R
S
T
R
J
L
V
G
U
V
Z
D
N
−−− 0.080
2.04
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MAC212A8/D
相关型号:
©2020 ICPDF网 联系我们和版权申明