MAC224A8 [ONSEMI]
Triacs Silicon Bidirectional Thyristors; 双向晶闸管硅双向晶闸管
| 型号： | MAC224A8 |
| 厂家： | 
ONSEMI |
| 描述： | Triacs Silicon Bidirectional Thyristors |
| 文件： | 总8页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preferred Device
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications such as
lighting systems, heater controls, motor controls and power supplies.
• Blocking Voltage to 800 Volts
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity
and Stability
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TRIACS
40 AMPERES RMS
200 thru 800 VOLTS
• Gate Triggering Guaranteed in Four Modes
• High Current and Surge Ratings
• Device Marking: Logo, Device Type, e.g., MAC224A4, Date Code
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
MT2
MT1
Rating
Symbol
Value
Unit
G
(1)
Peak Repetitive Off–State Voltage
V
Volts
DRM,
(T = –40 to 125°C, Sine Wave 50 to
60 Hz, Gate Open)
MAC224A4
V
RRM
J
200
400
600
800
4
MAC224A6
MAC224A8
MAC224A10
(2)
On–State RMS Current (T = 75°C)
I
40
A
A
C
T(RMS)
(Full Cycle Sine Wave 50 to 60 Hz)
1
2
Peak Non–repetitive Surge Current
I
350
500
2.0
10
3
TSM
(One Full Cycle, 60 Hz, T = 125°C)
J
TO–220AB
CASE 221A
STYLE 4
2
I t
2
A s
Circuit Fusing Considerations
(t = 8.3 ms)
Peak Gate Current
(Pulse Width
I
A
GM
2.0 µsec; T = 75°C)
C
PIN ASSIGNMENT
1
2
3
4
Main Terminal 1
Peak Gate Voltage
(Pulse Width
V
Volts
Watts
Watts
GM
GM
2.0 µsec; T = 75°C)
C
Main Terminal 2
Gate
Peak Gate Power
(Pulse Width
P
20
2.0 µsec; T = 75°C)
C
Main Terminal 2
Average Gate Power
(T = 75°C, t = 8.3 ms)
C
P
0.5
G(AV)
ORDERING INFORMATION
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
T
–40 to 125
–40 to 150
8.0
°C
°C
J
Device
MAC224A4
MAC224A6
MAC224A8
Package
TO220AB
TO220AB
TO220AB
Shipping
500/Box
500/Box
500/Box
T
stg
—
in. lb.
(1) V for all types can be applied on a continuous basis. Blocking
, V
DRM RRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) This device is rated for use in applications subject to high surge conditions.
Care must be taken to insure proper heat sinking when the device is to be
used at high sustained currents. (See Figure 1 for maximum case
temperatures.)
MAC224A10
TO220AB
500/Box
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
February, 2000 – Rev. 1
MAC224A/D
MAC224A Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R
θJC
R
θJA
1.0
60
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
L
260
°C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(Rated V , V ; Gate Open)
I
DRM,
RRM
T = 25°C
T = 125°C
J
I
—
—
—
—
10
2.0
µA
mA
DRM RRM
J
ON CHARACTERISTICS
Peak On–State Voltage
V
—
1.4
1.85
Volts
mA
TM
(I
TM
=
56 A Peak, Pulse Width
2 ms, Duty Cycle
2%)
Gate Trigger Current (Continuous dc)
(V = 12 V, R = 100 Ω)
I
GT
D
L
MT2(+), G(+); MT2(+), G(–); MT2(+), G(–)
MT2(–), G(+)
—
—
25
40
50
75
Gate Trigger Voltage (Continuous dc)
V
Volts
Volts
GT
(V = 12 V, R = 100 Ω)
D
L
MT2(+), G(+); MT2(–), G(–); MT(+), G(–)
MT2(–), G(+)
—
—
1.1
1.3
2.0
2.5
Gate Non-Trigger Voltage
V
GD
0.2
—
—
(V = 12 V, T = 125°C, R = 100 Ω)
D
J
L
All Quadrants
Holding Current
(V = 12 Vdc, Gate Open, Initiating Current = 200 mA)
D
I
—
—
30
75
—
mA
H
Gate Controlled Turn-On Time
(V = Rated V = 56 A Peak, I = 200 mA)
D
t
gt
1.5
µs
, I
DRM TM G
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
dv/dt
—
—
50
—
—
V/µs
V/µs
(V = Rated V
, Exponential Waveform, T = 125°C)
DRM C
D
Critical Rate of Rise of Commutation Voltage
(V = Rated V , I = 56 A Peak, Commutating
dv/dt(c)
5.0
D
DRM TM
di/dt = 20.2 A/ms, Gate Unenergized, T = 75°C)
C
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2
MAC224A Series
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
Parameter
V
TM
V
I
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
on state
I
H
DRM
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
RRM
I
V
Maximum On State Voltage
Holding Current
+ Voltage
at V
DRM
off state
TM
I
H
I
DRM
I
H
Quadrant 3
MainTerminal 2 –
V
TM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(–) I
GT
GATE
(+) I
GT
GATE
MT1
MT1
REF
REF
I
–
+ I
GT
GT
(–) MT2
(–) MT2
Quadrant III
Quadrant IV
(+) I
GATE
(–) I
GATE
GT
GT
MT1
REF
MT1
REF
–
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
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3
MAC224A Series
60
54
48
42
36
30
24
18
12
125
120
115
110
105
100
95
90
85
6.0
0
80
75
0
5.0
10
15
20
25
30
35
40
0
5.0
10
15
20
25
30
35
40
I
, RMS ON-STATE CURRENT (AMPS)*
I
, RMS ON-STATE CURRENT (AMPS)*
T(RMS)
T(RMS)
Figure 1. RMS Current Derating
Figure 2. On–State Power Dissipation
*This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device
is to be used at high sustained currents.
3.0
2.0
3.0
2.0
V = 12 V
D
L
V = 12 V
D
L
R = 100 Ω
R = 100 Ω
1.0
0.5
1.0
0.5
0.3
0.2
0.3
0.2
0.1
0.1
–60 –40 –20
0
20
40
60
80 100 120 140
–60 –40 –20
0
20
40
60
80 100 120 140
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. Typical Gate Trigger Current
Figure 4. Typical Gate Trigger Voltage
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4
MAC224A Series
1000
100
10
2.0
1.0
0.5
I
= 200 mA
TM
Gate Open
T = 25°C
J
0.3
0.2
1.0
0
0.1
–60
1.0
2.0
3.0
–40
–20
0
20
40
60
80 100 120
140
V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
TM
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Typical Holding Current
Figure 6. Typical On–State Characteristics
1
0.5
0.2
0.1
Z
θJC(t)
= r(t) • R
θJC
0.05
0.02
0.01
0.1
0.2
0.5
1
2
5
20
50
100
200
500
1 k
2 k
5 k
10 k
t, TIME (ms)
Figure 7. Thermal Response
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5
MAC224A Series
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
SEATING
PLANE
–T–
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
DIM MIN MAX
0.620 14.48
MILLIMETERS
MIN
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
4
3
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
Q
A
K
0.405
0.190
0.035
0.147
0.105
0.155
0.022
9.66
4.07
0.64
3.61
2.42
2.80
0.36
1
2
U
H
G
H
J
Z
K
L
N
Q
R
S
T
U
V
Z
0.562 12.70
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
R
J
L
V
G
D
0.080
2.04
N
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
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6
MAC224A Series
Notes
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7
MAC224A Series
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MAC224A/D
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