MB10S [ONSEMI]
0.5A 桥式整流器;
| 型号： | MB10S |
| 厂家： | 
ONSEMI |
| 描述： | 0.5A 桥式整流器 二极管 |
| 文件： | 总5页 (文件大小：347K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bridge Rectifiers, 0.5 A
MB10S
Description
The MB family of bridge rectifiers is a 0.5 A rectifier family that
achieves high surge current absorption within a very small foot print.
2
Within its small 35 mm form factor, the MB family shines in its surge
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capability. In order to absorb high surge currents, the design supports
2
2
a 35 A I
rating and a 5.0 A Sec I T rating. Devices in the family
FSM
are also rated to breakdown voltages of up to 1000 V. These features
make the MB family ideal for small power supplies that need a little
extra surge capability.
Features
• Low−Leakage
SOIC4 W
• Surge Overload Rating: 35 A peak
• Ideal for Printed Circuit Board
• UL Certified: UL #E258596
• This Device is Pb−Free and RoHS Compliant
CASE 751EP
MARKING DIAGRAM
2
1
−
+
$Y&Z&3
MB10S
3
4
$Y
&Z
&3
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Data Code (Year & Week)
MB10S = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
September, 2019 − Rev. 2
MB10S/D
MB10S
ABSOLUTE MAXIMUM RATINGS
(Values are at T = 25°C unless otherwise noted)
A
Symbol
Parameter
Value
Unit
V
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
1000
V
RRM
V
700
V
V
A
RMS
V
DC Reverse Voltage (Rated V )
1000
R
R
Average Rectified Forward Current at T = 50°C
I
A
F(AV)
On Glass−Epoxy PCB
0.5
0.8
On Aluminum Substrate
I
Non−Repetitive Peak Forward Surge Current:
8.3 ms Single Half−Sine−Wave
35
A
FSM
T
Storage Temperature Range
−55 to +150
−55 to +150
°C
STG
T
J
Operating Junction Temperature Range
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
W
P
D
Power Dissipation
1.4
Thermal Resistance, Junction to Ambient, per Leg (Note 1)
Thermal Resistance, Junction to Lead, per Leg (Note 1)
°C/W
85
20
R
θ
JA
°C/W
R
θ
JL
1. Device mounted on PCB with 0.5 × 0.5 inch (13 × 13 mm) lead length.
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted)
A
Symbol
Parameter
Maximum Forward Voltage, per Diode I = 0.5 A
Conditions
Value
1.0
Unit
V
V
I
F
F
Maximum Reverse Current, per Diode
T = 25°C
mA
5.0
R
A
at Rated V
R
T = 125°C
0.5
mA
A
2
2
2
I t
I t Rating for Fusing
A s
t < 8.3 ms
5.0
C
Typical Capacitance, per Diode
V
R
= 4.0 V, f = 1.0 MHz
13
pF
T
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Part Number
Marking
Package
Shipping
MB10S
MB10S
SOIC4 W
(Pb−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
MB10S
TYPICAL PERFORMANCE CHARACTERISTICS
100
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Aluminum Substrate
10
T = 125°C
j
Glass
Epoxy
P.C.B
1
0.1
T = 25°C
j
Resistive or Inductive Load
20 40 60 80 100 120 140 160
0.01
0
0
20
40
60
80
100
Ambient Temperature (5C)
Percent of Rated Peak Reverse Voltage (%)
Figure 1. Derating Curve for Output Rectified
Current
Figure 2. Typical Reverse Leakage Characteristics
Per Leg
30
35
T = 40°C
T = 25°C
j
j
30
25
20
Single Half Sine−Wave
f = 1 MHz
= 50 mVp−p
25
20
(JEDEC Method)
V
slg
F = 50 Hz
F = 60 Hz
15
10
5
15
10
5
1 Cycle
0
0
1
10
Number of Cycles
100
0.1
1
10
100 200
Reverse Voltage (V)
Figure 3. Maximum Non−Repetitive Peak Forward
Figure 4. Typical Junction Capacitance Per Leg
Surge Current Per Leg
10
T = 25°C
j
1
0.1
T = 25°C
j
Pulse Width = 300 ms
1% Duty Cycles
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Figure 5. Typical Forward Voltage Characteristics
Per Leg
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC4 W
CASE 751EP
ISSUE O
DATE 30 SEP 2016
0.13 C B A
0.13 C A B
0.10 C
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13753G
SOIC4 W
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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