MBR130 [ONSEMI]

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS; 肖特基整流器1.0安培30伏
MBR130
型号: MBR130
厂家: ONSEMI    ONSEMI
描述:

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS
肖特基整流器1.0安培30伏

二极管 瞄准线
文件: 总4页 (文件大小:44K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBR130T1, MBR130T3  
Surface Mount  
Schottky Power Rectifier  
Plastic SOD–123 Package  
. . . using the Schottky Barrier principle with a large area  
metal–to–silicon power diode. Ideally suited for low voltage, high  
frequency rectification or as free wheeling and polarity protection  
diodes in surface mount applications where compact size and weight  
are critical to the system. This package also provides an easy to work  
with alternative to leadless 34 package style. These state–of–the–art  
devices have the following features:  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
1.0 AMPERES  
30 VOLTS  
Guardring for Stress Protection  
Low Forward Voltage  
125°C Operating Junction Temperature  
Epoxy Meets UL94, VO at 1/8″  
Package Designed for Optimal Automated Board Assembly  
ESD Ratings: Machine Model, C;  
ESD Ratings: Human Body Model, 3  
Mechanical Characteristics  
SOD–123  
CASE 425  
STYLE 1  
Reel Options: MBR130T1 = 3,000 per 7reel/8 mm tape  
Reel Options: MBR130T3 = 10,000 per 13reel/8 mm tape  
Device Marking: S3  
Polarity Designator: Cathode Band  
Weight: 11.7 mg (approximately)  
Case: Epoxy, Molded  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
DEVICE MARKING  
S3  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
S3 = Device Code  
MAXIMUM RATINGS  
ORDERING INFORMATION  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
30  
V
Device  
Package  
SOD–123  
SOD–123  
Shipping  
RRM  
V
RWM  
MBR130T1  
MBR130T3  
3000/Tape & Reel  
V
R
Average Rectified Forward Current  
I
A
A
F(AV)  
10,000/Tape & Reel  
(Rated V ) T = 65°C  
1.0  
5.5  
R
L
Non–Repetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions, Halfwave, Single  
Phase, 60 Hz)  
I
FSM  
Storage Temperature Range  
T
–65 to +125  
–65 to +125  
1000  
°C  
°C  
stg  
Operating Junction Temperature  
T
J
Voltage Rate of Change (Rated V )  
dv/dt  
V/ms  
R
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
February, 2001 – Rev. 1  
MBR130T1/D  
MBR130T1, MBR130T3  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Value  
230  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient (Note 1.)  
Thermal Resistance, Junction to Lead (Note 1.)  
R
θ
JA  
JL  
R
108  
θ
ELECTRICAL CHARACTERISTICS  
Characteristic  
Symbol  
Typ  
Max  
Unit  
Maximum Instantaneous Forward Voltage (Note 2.)  
V
F
V
(I = 0.1 A, T = 25°C)  
0.47  
0.35  
0.45  
F
J
(I = 0.7 A, T = 25°C)  
F
J
(I = 1.0 A, T = 25°C)  
F
J
Maximum Instantaneous Reverse Current (Note 2.)  
(Rated dc Voltage, T = 25°C)  
I
R
mA  
60  
10  
C
(V = 5 V, T = 25°C)  
R
C
1. FR–4 or FR–5 = 3.5 × 1.5 inches using a 1 inch Cu pad.  
2. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%.  
10  
10  
1
1
T = 125°C  
J
T = 125°C  
J
75°C  
25°C  
75°C 25°C  
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65  
0.1  
0.1  
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65  
V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)  
F
V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)  
F
Figure 1. Maximum Forward Voltage  
Figure 2. Typical Forward Voltage  
http://onsemi.com  
2
MBR130T1, MBR130T3  
0.01  
0.001  
200  
180  
160  
140  
120  
100  
80  
T = 125°C  
J
75°C  
25°C  
0.0001  
0.00001  
60  
0.000001  
40  
20  
0
0.0000001  
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
35  
V , REVERSE VOLTAGE (VOLTS)  
R
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 3. Typical Reverse Current  
Figure 4. Typical Capacitance  
1.8  
1.6  
1.4  
1.2  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
RATED  
VOLTAGE  
APPLIED  
dc  
dc  
SQUARE  
WAVE  
SQUARE  
WAVE  
0.8  
0.6  
0.4  
0.2  
0.1  
0
0
0
20  
40  
60  
80  
100  
120  
0
0.2  
0.4  
0.6 0.8  
1
1.2 1.4 1.6 1.8  
T , LEAD TEMPERATURE (°C)  
L
I , AVERAGE FORWARD CURRENT (AMPS)  
F(AV)  
Figure 5. Current Derating, Lead, RqJL = 1085C/W  
Figure 6. Forward Power Dissipation  
RECOMMENDED FOOTPRINT FOR SOD–123  
0.91  
0.036  
1.22  
0.048  
2.36  
0.093  
mm  
4.19  
inches  
0.165  
SOD–123  
http://onsemi.com  
3
MBR130T1, MBR130T3  
PACKAGE DIMENSIONS  
SOD–123  
CASE 425–04  
ISSUE C  
A
C
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
H
2. CONTROLLING DIMENSION: INCH.  
1
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
1.40  
2.55  
0.95  
0.50  
0.25  
0.00  
---  
MAX  
1.80  
2.85  
1.35  
0.70  
---  
A
B
C
D
E
H
J
0.055  
0.100  
0.037  
0.020  
0.004  
0.000  
---  
0.071  
0.112  
0.053  
0.028  
---  
K
B
0.004  
0.006  
0.152  
0.10  
0.15  
3.85  
K
0.140  
3.55  
E
2
STYLE 1:  
PIN 1. CATHODE  
2. ANODE  
J
D
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
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CENTRAL/SOUTH AMERICA:  
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4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
Email: r14525@onsemi.com  
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)  
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ON Semiconductor Website: http://onsemi.com  
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781  
For additional information, please contact your local  
Sales Representative.  
*Available from Germany, France, Italy, UK, Ireland  
MBR130T1/D  

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