MBR130 [ONSEMI]
SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS; 肖特基整流器1.0安培30伏型号: | MBR130 |
厂家: | ONSEMI |
描述: | SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS |
文件: | 总4页 (文件大小:44K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBR130T1, MBR130T3
Surface Mount
Schottky Power Rectifier
Plastic SOD–123 Package
. . . using the Schottky Barrier principle with a large area
metal–to–silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. These state–of–the–art
devices have the following features:
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
30 VOLTS
• Guardring for Stress Protection
• Low Forward Voltage
• 125°C Operating Junction Temperature
• Epoxy Meets UL94, VO at 1/8″
• Package Designed for Optimal Automated Board Assembly
• ESD Ratings: Machine Model, C;
ESD Ratings: Human Body Model, 3
Mechanical Characteristics
SOD–123
CASE 425
STYLE 1
• Reel Options: MBR130T1 = 3,000 per 7″ reel/8 mm tape
Reel Options: MBR130T3 = 10,000 per 13″ reel/8 mm tape
• Device Marking: S3
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
DEVICE MARKING
S3
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
S3 = Device Code
MAXIMUM RATINGS
ORDERING INFORMATION
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
30
V
Device
Package
SOD–123
SOD–123
Shipping
RRM
V
RWM
MBR130T1
MBR130T3
3000/Tape & Reel
V
R
Average Rectified Forward Current
I
A
A
F(AV)
10,000/Tape & Reel
(Rated V ) T = 65°C
1.0
5.5
R
L
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions, Halfwave, Single
Phase, 60 Hz)
I
FSM
Storage Temperature Range
T
–65 to +125
–65 to +125
1000
°C
°C
stg
Operating Junction Temperature
T
J
Voltage Rate of Change (Rated V )
dv/dt
V/ms
R
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
February, 2001 – Rev. 1
MBR130T1/D
MBR130T1, MBR130T3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
230
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient (Note 1.)
Thermal Resistance, Junction to Lead (Note 1.)
R
θ
JA
JL
R
108
θ
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2.)
V
F
V
(I = 0.1 A, T = 25°C)
–
–
0.47
0.35
0.45
–
F
J
(I = 0.7 A, T = 25°C)
F
J
(I = 1.0 A, T = 25°C)
F
J
Maximum Instantaneous Reverse Current (Note 2.)
(Rated dc Voltage, T = 25°C)
I
R
mA
60
10
C
(V = 5 V, T = 25°C)
R
C
1. FR–4 or FR–5 = 3.5 × 1.5 inches using a 1 inch Cu pad.
2. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2%.
10
10
1
1
T = 125°C
J
T = 125°C
J
75°C
25°C
75°C 25°C
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65
0.1
0.1
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65
V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
Figure 1. Maximum Forward Voltage
Figure 2. Typical Forward Voltage
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2
MBR130T1, MBR130T3
0.01
0.001
200
180
160
140
120
100
80
T = 125°C
J
75°C
25°C
0.0001
0.00001
60
0.000001
40
20
0
0.0000001
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Typical Reverse Current
Figure 4. Typical Capacitance
1.8
1.6
1.4
1.2
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
RATED
VOLTAGE
APPLIED
dc
dc
SQUARE
WAVE
SQUARE
WAVE
0.8
0.6
0.4
0.2
0.1
0
0
0
20
40
60
80
100
120
0
0.2
0.4
0.6 0.8
1
1.2 1.4 1.6 1.8
T , LEAD TEMPERATURE (°C)
L
I , AVERAGE FORWARD CURRENT (AMPS)
F(AV)
Figure 5. Current Derating, Lead, RqJL = 1085C/W
Figure 6. Forward Power Dissipation
RECOMMENDED FOOTPRINT FOR SOD–123
0.91
0.036
1.22
0.048
2.36
0.093
mm
4.19
inches
0.165
SOD–123
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3
MBR130T1, MBR130T3
PACKAGE DIMENSIONS
SOD–123
CASE 425–04
ISSUE C
A
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
H
2. CONTROLLING DIMENSION: INCH.
1
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.40
2.55
0.95
0.50
0.25
0.00
---
MAX
1.80
2.85
1.35
0.70
---
A
B
C
D
E
H
J
0.055
0.100
0.037
0.020
0.004
0.000
---
0.071
0.112
0.053
0.028
---
K
B
0.004
0.006
0.152
0.10
0.15
3.85
K
0.140
3.55
E
2
STYLE 1:
PIN 1. CATHODE
2. ANODE
J
D
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MBR130T1/D
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