MBR30170MFST1G [ONSEMI]
30A, 170V Schottky Rectifier in SO8-FL;
| 型号： | MBR30170MFST1G |
| 厂家： | 
ONSEMI |
| 描述： | 30A, 170V Schottky Rectifier in SO8-FL |
| 文件： | 总6页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
Schottky Barrier Rectifier
MBR30170MFS
This Schottky rectifier is high performance device in SO−8 FL
package. The lower forward voltage, less leakage current, and small
junction capacitance are suitable to high switching frequency high
density DC to DC conversion application. Offering higher avalanche
energy capability for Oring or reverse protection application. The
SO−8 FL package provides an excellent thermal performance, less
land area of board space, and low profile.
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SCHOTTKY BARRIER
RECTIFIERS
Features
• Lower Forward Voltage Drop
• Less Leakage Current in High Temperature
• Small Junction Capacitance for High Switching Frequency
• Higher Avalanche Energy Capability
• 175°C Operating Junction Temperature
• Good Alternative Solution of SMC and DPAK Package
30 AMPERES
170 VOLTS
5,6
1,2,3
2
• Small Footprint − Land Area: 31.2 mm
MARKING
DIAGRAM
• Low Profile − Maximum Height of 1.1 mm
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
A
1
C
C
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
A
A
B30170
AYWZZ
Mechanical Characteristics:
• Case: Molded Epoxy
Not Used
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 95 mg (Approximately)
B30170 = Specific Device Code
A
Y
= Assembly Location
= Year
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
• MSL 1
W
ZZ
= Work Week
= Lot Traceability
Applications
• High Switching Frequency DC/DC Converter
ORDERING INFORMATION
nd
• 2 Rectifier
Device
Package
Shipping†
1500 /
• Freewheeling Diode used with Inductive Load
• Oring / Reverse Protection
MBR30170MFST1G
SO−8 FL
(Pb−Free) Tape & Reel
MBR30170MFST3G
SO−8 FL 5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
June, 2021 − Rev. 0
MBR30170MFS/D
MBR30170MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
170
V
RRM
RWM
R
V
V
Continuous Forward Current (T = 162°C, DC)
I
30
60
A
A
A
C
F(DC)
Peak Repetitive Forward Current (T = 159°C, Square Wave, Duty = 0.5)
I
FRM
C
Non−Repetitive Peak Surge Current
Sinusoidal Halfwave, 8.3 ms
Square wave, 1 ms
I
540
FSM
700
Square wave, 100 ms
1200
Non−Repetitive Avalanche Energy (T = 25°C)
E
280
mJ
°C
°C
J
AS
Storage Temperature Range
T
stg
−65 to +175
−55 to +175
3B
Operating Junction Temperature Range (Note 1)
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
T
J
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient dP /dT < 1/R
q
D
J
JA
The reliability may be affected by leakage current when device operates near to rated voltage and maximum junction temperature.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
55
Unit
°C/W
°C/W
°C/W
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Case Bottom (Note 2)
Thermal Characterization, Junction−to−Case Top (Note 2)
Thermal Characterization, Junction−to−Lead of Cathode (Note 2)
R
q
JA
R
0.65
3.5
q
JCB
y
JCT
JLC
y
1.4
2
2. Assume 600 mm , 1 oz. copper bond pad on a FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage
V
F
V
(I = 15 A, T = 25°C)
0.76
0.62
0.81
0.68
−
−
0.89
0.74
F
J
(I = 15 A, T = 125°C)
F
J
(I = 30 A, T = 25°C)
F
J
(I = 30 A, T = 125°C)
F
J
Instantaneous Reverse Current
I
R
(V = Rated DC Voltage, T = 25°C)
0.5
1.0
50
10
mA
mA
R
J
(V = Rated DC Voltage, T = 125°C)
R
J
Junction Capacitance
C
pF
J
(V = 1 V, T = 25°C, f = 1 MHz)
821
−
R
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MBR30170MFS
TYPICAL CHARACTERISTICS
120
110
100
30
T = 175°C
T = 175°C
J
J
R
= 0.65°C/W
R
= 55°C/W
q
JCB
25
q
JA
Square Wave
D = 0.2
Square Wave
90
80
70
(Duty = 0.5)
20
D = 0.3
15
60
50
40
30
20
D = 0.5
DC
DC
10
5
0
10
0
25 40 55 70 85 100 115 130 145 160 175
25 40 55 70 85 100 115 130 145 160 175
T , CASE TEMPERATURE (°C)
C
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Forward Current Derating of Case
Temperature
Figure 2. Forward Current Derating of Ambient
Temperature
100
10
100
10
T = 125°C
A
T = 25°C
T = 175°C
A
A
T = 150°C
A
T = 125°C
A
T = −40°C
A
T = 85°C
A
T = 25°C
A
1
1
T = −20°C
A
T = −40°C
A
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 3. Typical Forward Characteristics
Figure 4. Maximum Forward Characteristics
1E+00
1E−01
1E−02
1E+00
1E−01
1E−02
T = 175°C
A
T = 125°C
A
T = 150°C
T = 125°C
A
1E−03
1E−04
1E−05
1E−06
1E−07
1E−03
1E−04
1E−05
1E−06
1E−07
A
T = 25°C
A
T = 85°C
A
T = 25°C
A
T = −40°C
A
1E−08
1E−09
1E−08
1E−09
T = −20°C
A
1E−10
1E−11
T = −40°C
1E−10
1E−11
A
0
20
40
60
80
100 120 140 160
0
20
40
60
80
100 120 140 160
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 5. Typical Reverse Characteristics
Figure 6. Maximum Reverse Characteristics
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3
MBR30170MFS
TYPICAL CHARACTERISTICS
10K
1K
25
T = 175°C
D = 0.5
J
Square Wave
T = 25°C
J
20
15
10
D = 0.3
DC
D = 0.2
100
10
5
0
0.1
1
10
100
0
5
10
15
20
25
30
V , REVERSE VOLTAGE (V)
R
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Typical Junction Capacitance
Figure 8. Average Forward Power Dissipation
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
2
(Assume 600 mm , 1 oz. copper bond pad on a FR4 board)
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 9. Typical Thermal Characteristics, Junction−to−Ambient
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4
MBR30170MFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
RECOMMENDED
STYLE 1:
SOLDERING FOOTPRINT*
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
2X
0.495
SIDE VIEW
DETAIL A
4.560
2X
5. DRAIN
1.530
8X b
A B
0.10
0.05
C
c
e/2
e
2X
0.475
L
3.200
1.330
1
4
4.530
K
2X
0.905
E2
PIN 5
(EXPOSED PAD)
M
1
L1
0.965
4X
D2
BOTTOM VIEW
1.000
G
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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