MBR340 [ONSEMI]

SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 40 VOLTS; 肖特基整流器3.0安培40伏
MBR340
型号: MBR340
厂家: ONSEMI    ONSEMI
描述:

SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 40 VOLTS
肖特基整流器3.0安培40伏

整流二极管 CD
文件: 总4页 (文件大小:62K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBR340  
Preferred Device  
Axial Lead Rectifier  
. . . employing the Schottky Barrier principle in a large area  
metal–to–silicon power diode. State–of–the–art geometry features  
epitaxial construction with oxide passivation and metal overlap  
contact. Ideally suited for use as rectifiers in low–voltage,  
high–frequency inverters, free wheeling diodes, and polarity  
protection diodes.  
http://onsemi.com  
Extremely Low V  
Low Power Loss/High Efficiency  
SCHOTTKY BARRIER  
RECTIFIER  
F
Highly Stable Oxide Passivated Junction  
Low Stored Charge, Majority Carrier Conduction  
3.0 AMPERES  
40 VOLTS  
Mechanical Characteristics:  
Case: Epoxy, Molded  
Weight: 1.1 gram (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
Lead and Mounting Surface Temperature for Soldering Purposes:  
220°C Max. for 10 Seconds, 1/16from case  
Shipped in plastic bags, 500 per bag  
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to  
the part number  
Polarity: Cathode indicated by Polarity Band  
Marking: B340  
AXIAL LEAD  
CASE 267–05  
(DO–201AD)  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
MARKING DIAGRAM  
B340  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
40  
V
RRM  
RWM  
V
R
Average Rectified Forward Current  
I
3.0  
80  
A
A
O
B340 = Device Code  
T = 65°C (R  
= 28°C/W,  
q
JA  
A
P.C. Board Mounting)  
Non–Repetitive Peak  
I
FSM  
Surge Current (Note 1)  
(Surge Applied at Rated Load  
Conditions Halfwave, Single  
ORDERING INFORMATION  
Phase, 60 Hz, T = 75°C)  
L
Device  
Package  
Axial Lead  
Axial Lead  
Shipping  
Operating and Storage Junction  
Temperature Range  
(Reverse Voltage Applied)  
T , T  
–65 to +150  
150  
°C  
°C  
J
stg  
MBR340  
500 Units/Bag  
MBR340RL  
1500/Tape & Reel  
Peak Operating Junction  
Temperature  
T
J(pk)  
(Forward Current Applied)  
Preferred devices are recommended choices for future use  
and best overall value.  
1. Lead Temperature reference is cathode lead 1/32from case.  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
January, 2002 – Rev. 3  
MBR340/D  
MBR340  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Ambient (see Note 4, Mounting Method 3)  
R
28  
°C/W  
θ
JA  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 2)  
L
Characteristic  
Symbol  
Max  
Unit  
Maximum Instantaneous Forward Voltage (Note 3)  
v
V
F
(i = 1.0 Amp)  
0.500  
0.600  
0.850  
F
(i = 3.0 Amp)  
F
(i = 9.4 Amp)  
F
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 3)  
i
R
mA  
T = 25°C  
T = 100°C  
L
0.60  
20  
L
2. Lead Temperature reference is cathode lead 1/32from case.  
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.  
20  
100  
40  
20  
10  
150°C  
10  
7.0  
5.0  
4.0  
2.0  
1.0  
100°C  
75°C  
1000  
0.4  
0.2  
0.1  
100  
10  
0.04  
0.02  
0.01  
3.0  
25°C  
2.0  
T = 150°C  
J
25°C  
0.004  
0.002  
100°C  
10  
0.001  
1.0  
0.7  
0.5  
0
10  
20  
30  
40  
V REVERSE VOLTAGE (VOLTS)  
R
Figure 2. Typical Reverse Current*  
*The curves shown are typical for the highest voltage device in the  
voltage grouping. Typical reverse current for lower voltage selec-  
tions can be estimated from these same curves if V is sufficiently  
below rated V .  
R
0.3  
0.2  
R
10  
8.0  
6.0  
4.0  
2.0  
0.1  
0.07  
0.05  
0.03  
0.02  
SQUARE  
WAVE  
dc  
0.01  
0
0.1 0.2  
0.3 0.4 0.5 0.6 0.7  
0.8 0.9  
20  
40  
60  
80 100 120 140 160 180 200  
v INSTANTANEOUS VOLTAGE (VOLTS)  
F,  
T , AMBIENT TEMPERATURE (C°)  
A
Figure 1. Typical Forward Voltage  
Figure 3. Current Derating  
(Mounting Method #3 per Note 4)  
http://onsemi.com  
2
MBR340  
2.5  
2.0  
1.5  
1.0  
0.5  
500  
SQUARE  
WAVE  
RESISTIVE LOAD  
IPK  
dc  
400  
300  
T = 25°C  
J
+ p  
IAV  
(CAPACITIVE LOAD)  
PK  
200  
I
+ 5.0  
IAV  
10  
T = 150°C  
J
20  
100  
90  
80  
70  
60  
50  
0
1.0  
2.0  
3.0  
4.0  
5.0  
0
10  
20  
30  
40  
50  
I
, AVERAGE FORWARD CURRENT (AMPS)  
V REVERSE VOLTAGE (VOLTS)  
R
F (AV)  
Figure 4. Power Dissipation  
Figure 5. Typical Capacitance  
NOTE 4 — MOUNTING DATA  
Data shown for thermal resistance junction–to–ambient  
(R ) for the mountings shown is to be used as typical  
θJA  
guideline values for preliminary engineering, or in case the  
tie point temperature cannot be measured.  
TYPICAL VALUES FOR R  
IN STILL AIR  
θ
JA  
Lead Length, L (in)  
Mounting  
Method  
1/8  
1/4  
1/2  
3/4  
R
θ
JA  
1
2
3
50  
58  
51  
59  
53  
61  
55  
63  
°C/W  
°C/W  
°C/W  
28  
Mounting Method 2  
Mounting Method 1  
Vector Push–In  
Terminals T–28  
P.C. Board where available  
copper surface is small.  
L
L
L
L
Mounting Method 3  
P.C. Board with  
2–1/2X 2–1/2″  
copper surface.  
L = 1/2’’  
Board Ground Plane  
http://onsemi.com  
3
MBR340  
PACKAGE DIMENSIONS  
AXIAL LEAD  
CASE 267–05  
(DO–201AD)  
ISSUE G  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
A
K
D
1
2
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
7.30  
4.80  
1.20  
25.40  
MAX  
9.50  
5.30  
1.30  
---  
A
B
D
K
0.287  
0.189  
0.047  
1.000  
0.374  
0.209  
0.051  
---  
B
K
STYLE 1:  
PIN 1. CATHODE (POLARITY BAND)  
2. ANODE  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold  
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable  
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
Literature Fulfillment:  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada  
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada  
Email: ONlit@hibbertco.com  
Email: r14525@onsemi.com  
ON Semiconductor Website: http://onsemi.com  
For additional information, please contact your local  
Sales Representative.  
N. American Technical Support: 800–282–9855 Toll Free USA/Canada  
MBR340/D  

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