MBRB1045T4G [ONSEMI]
SWITCHMODE Schottky Power Rectifier; 开关模式™功率肖特基整流器型号: | MBRB1045T4G |
厂家: | ONSEMI |
描述: | SWITCHMODE Schottky Power Rectifier |
文件: | 总6页 (文件大小:102K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBRB1045, MBRD1045
Preferred Device
SWITCHMODEt
Schottky Power Rectifier
Surface Mount Power Package
This series of Power Rectifiers employs the Schottky Barrier
principle in a large metal−to−silicon power diode. State−of−the−art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
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SCHOTTKY BARRIER
RECTIFIER
10 AMPERES, 45 VOLTS
Features
• Guardring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Short Heat Sink Tab Manufactured − Not Sheared!
• Pb−Free Packages are Available
1
4
3
MARKING DIAGRAM
4
AY WW
Mechanical Characteristics:
MBRB1045G
AKA
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
1
2
3
• Weight: 1.7 grams for D PAK (approximately)
2
0.4 grams for DPAK (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
D PAK
CASE 418B
PLASTIC
A
Y
= Assembly Location
= Year
= Work Week
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
WW
• Device Meets MSL1 Requirements
• ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
MBRB1045 = Device Code
G
= Pb−Free Package
= Diode Polarity
AKA
MAXIMUM RATINGS
MARKING DIAGRAM
4
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
45
V
RRM
RWM
YWW
B10
45G
2
1
3
R
DPAK
CASE 369C
Average Rectified Forward Current
I
10
20
A
A
F(AV)
(Rated V ) T = 135°C
R
C
Y
= Year
= Work Week
Peak Repetitive Forward Current
I
FRM
(Rated V , Square Wave, 20 kHz)
WW
B1045
G
R
T
= 135°C
C
= Device Code
= Pb−Free Package
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
I
150 (MBRB)
70 (MBRD)
A
FSM
Operating Junction and Storage
Temperature Range (Note 1)
T , T
−65 to +175
°C
J
stg
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Voltage Rate of Change (Rated V )
dv/dt
10000
V/ms
R
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Preferred devices are recommended choices for future use
and best overall value.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
©
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
July, 2010 − Rev. 7
MBRB1045/D
MBRB1045, MBRD1045
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
°C/W
(MBRB1045)
− Junction−to−Case (Note 2)
R
R
1.0
50
2.43
68
q
JC
− Junction−to−Ambient (Note 2)
− Junction−to−Case (Note 2)
− Junction−to−Ambient (Note 2)
q
JA
(MBRD1045)
R
q
JC
R
q
JA
2. When mounted using minimum recommended pad size on FR−4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3)
V
F
V
(I = 10 Amps, T = 125°C)
0.57
0.72
0.84
F
J
(I = 20 Amps, T = 125°C)
F
J
(I = 20 Amps, T = 25°C)
F
J
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T = 125°C)
I
R
mA
15
0.1
J
(Rated dc Voltage, T = 25°C)
J
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
ORDERING INFORMATION
Device
†
Package
Shipping
2
MBRB1045
D PAK
50 Units / Rail
50 Units / Rail
2
MBRB1045G
D PAK
(Pb−Free)
2
MBRB1045T4
D PAK
800 Units / Tape & Reel
800 Units / Tape & Reel
2
MBRB1045T4G
D PAK
(Pb−Free)
MBRD1045T4G
DPAK
(Pb−Free)
2500 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MBRB1045, MBRD1045
100
100
T = 150°C
J
T = 150°C
J
70
50
70
100°C
25°C
100°C
50
25°C
30
20
30
20
10
7.0
5.0
10
7.0
5.0
3.0
2.0
3.0
2.0
1.0
1.0
0.7
0.5
0.7
0.5
0.3
0.2
0.3
0.2
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.2
0.4
0.6
0.8
1.0
1.2
1.4
v , INSTANTANEOUS VOLTAGE (VOLTS)
F
v , INSTANTANEOUS VOLTAGE (VOLTS)
F
Figure 1. Maximum Forward Voltage
Figure 2. Typical Forward Voltage
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3
MBRB1045, MBRD1045
100
100
10
T = 150°C
J
150°C
10
125°C
100°C
125°C
100°C
1.0
1.0
0.1
75°C
75°C
0.1
25°C
0.01
0.01
25°C
0.001
0.001
0
5.0
10
15
20
25
30
35
40
45
50
0
5.0
10
15
20
25
30
35
40
45 50
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Maximum Reverse Current
Figure 4. Typical Reverse Current
1400
1200
1000
800
200
100
70
600
50
400
30
20
200
0
0
10
20
30
40
50
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
V , REVERSE VOLTAGE (VOLTS)
R
NUMBER OF CYCLES AT 60 Hz
Figure 5. Typical Capacitance
Figure 8. Maximum Surge Capability
18
16
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
RATED VOLTAGE APPLIED
dc
dc
14
12
SQUARE
WAVE
SQUARE
WAVE
10
8.0
6.0
4.0
2.0
0
1.0
0
130
135
140
145
150
155
0
2.0
4.0
6.0
8.0
10
12
14
16
18
T , CASE TEMPERATURE (°C)
C
I , AVERAGE FORWARD CURRENT (AMPS)
F(AV)
Figure 6. Current Derating, Case,
Figure 7. Forward Power Dissipation
RqJC = 1.0 °C/W
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4
MBRB1045, MBRD1045
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.89
1.40
8.89
A
S
1
2
3
2.54 BSC
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
−T−
SEATING
PLANE
K
W
J
K
L
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
M
N
P
R
S
V
H
D 3 PL
M
M
T B
0.13 (0.005)
SOLDERING FOOTPRINT*
10.49
8.38
16.155
3.25X04
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MBRB1045, MBRD1045
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN
DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
D
A
E
c2
b3
B
4
2
L3
L4
Z
H
DETAIL A
1
3
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
b2 0.030 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2 0.018 0.024
GAUGE
SEATING
PLANE
L2
PLANE
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
L2
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
0.020 BSC
DETAIL A
L3 0.035 0.050
ROTATED 905 CW
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
SOLDERING FOOTPRINT*
6.20
0.244
3.00
0.118
2.58
0.102
5.80
0.228
1.60
0.063
6.17
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MBRB1045/D
相关型号:
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