MBRB20H100CT [ONSEMI]
SWITCHMODE Power Rectifier 100 V, 20 A; 开关模式电源整流器100 V， 20 A
| 型号： | MBRB20H100CT |
| 厂家： | 
ONSEMI |
| 描述： | SWITCHMODE Power Rectifier 100 V, 20 A |
| 文件： | 总7页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR20H100CT,
MBRB20H100CT,
MBRF20H100CT
SWITCHMODE™
Power Rectifier
100 V, 20 A
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 100 VOLTS
Features and Benefits
• Low Forward Voltage: 0.64 V @ 125°C
• Low Power Loss/High Efficiency
• High Surge Capacity
1
• 175°C Operating Junction Temperature
• 20 A Total (10 A Per Diode Leg)
• Guard−Ring for Stress Protection
• Pb−Free Packages are Available
2, 4
3
MARKING
DIAGRAMS
4
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
TO−220AB
CASE 221A
STYLE 6
AYWW
B20H100G
A K A
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
1
2
3
• Weight (Approximately):
1.9 Grams (TO−220)
2
1.7 Grams (D PAK)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
AYWW
B20H100G
A K A
ISOLATED TO−220
CASE 221D
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
STYLE 3
1
2
3
MAXIMUM RATINGS
Please See the Table on the Following Page
AY
WW
2
B20H100G
A K A
4
D PAK
CASE 418B
STYLE 3
1
2
3
A
Y
= Assembly Location
= Year
WW
= Work Week
B20H100 = Device Code
G
= Pb−Free Device
AKA
= Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
March, 2007 − Rev. 4
MBR20H100CT/D
MBR20H100CT, MBRB20H100CT, MBRF20H100CT
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
100
V
RRM
RWM
R
Average Rectified Forward Current
I
10
20
A
A
A
F(AV)
(Rated V ) T = 162°C
R
C
Peak Repetitive Forward Current
I
FRM
(Rated V , Square Wave, 20 kHz) T = 160°C
R
C
Nonrepetitive Peak Surge Current
I
250
FSM
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature (Note 1)
Storage Temperature
T
+175
*65 to +175
10,000
°C
°C
J
T
stg
Voltage Rate of Change (Rated V )
dv/dt
V/ms
mJ
V
R
Controlled Avalanche Energy (see test conditions in Figures 11 and 12)
W
AVAL
200
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
> 8000
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
°C/W
(MBR20H100CT and MBRB20H100CT)
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Case
R
R
R
2.0
60
2.5
q
JC
q
JA
q
JC
(MBRF20H100CT)
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
v
V
F
(I = 10 A, T = 25°C)
0.77
0.64
0.88
0.73
F
C
(I = 10 A, T = 125°C)
F
C
(I = 20 A, T = 25°C)
F
C
(I = 20 A, T = 125°C)
F
C
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T = 125°C)
i
mA
R
6.0
C
(Rated DC Voltage, T = 25°C)
0.0045
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
DEVICE ORDERING INFORMATION
Device Order Number
MBR20H100CT
†
Package Type
Shipping
TO−220
50 Units / Rail
50 Units / Rail
MBR20H100CTG
TO−220
(Pb−Free)
MBRF20H100CTG
TO−220FP
(Pb−Free)
50 Units / Rail
2
MBRB20H100CTT4G
D PAK
800 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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2
MBR20H100CT, MBRB20H100CT, MBRF20H100CT
100
10
1
100
T = 150°C
T = 150°C
J
J
10
1
T = 125°C
T = 125°C
J
J
T = 25°C
J
T = 25°C
J
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.2
0.4
0.6
0.8
1.0
1.2
V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.0E−01
1.0E−02
1.0E−01
1.0E−02
T = 150°C
J
T = 150°C
J
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
T = 125°C
J
T = 125°C
J
T = 25°C
J
T = 25°C
J
0
20
40
60
80
100
0
20
40
60
80
100
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
20
15
10
16
14
12
10
8
dc
SQUARE
DC
SQUARE WAVE
6
5
0
4
2
0
100
110
120
130 140
150 160 170
180
0
5
10
15
20
25
T , CASE TEMPERATURE (°C)
C
I , AVERAGE FORWARD CURRENT (AMPS)
O
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
MBR20H100CT, MBRB20H100CT, MBRF20H100CT
10000
T = 25°C
J
1000
100
10
0
20
40
60
80
100
V , REVERSE VOLTAGE (VOLTS)
R
Figure 7. Capacitance
100
D = 0.5
10
1
0.2
0.1
0.05
P
(pk)
0.01
t
1
0.1
0.01
t
2
DUTY CYCLE, D = t /t
SINGLE PULSE
0.00001 0.0001
1 2
0.000001
0.001
0.01
t , TIME (sec)
0.1
1
10
100
1000
1
Figure 8. Thermal Response Junction−to−Ambient for MBR20H100CT and MBRB20H100CT
10
D = 0.5
0.2
1
0.1
0.05
P
(pk)
0.1
t
1
0.01
t
2
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.00001
0.01
0.000001
0.0001
0.001
0.01
t , TIME (sec)
0.1
1
10
100
1000
1
Figure 9. Thermal Response Junction−to−Case for MBR20H100CT and MBRB20H100CT
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4
MBR20H100CT, MBRB20H100CT, MBRF20H100CT
10
D = 0.5
0.2
1
0.1
0.1
0.05
0.01
P
(pk)
t
1
0.01
0.001
t
2
SINGLE PULSE
DUTY CYCLE, D = t /t
1 2
0.000001
0.00001
0.0001
0.001
0.01
t , TIME (sec)
0.1
1
10
100
1000
1
Figure 10. Thermal Response Junction−to−Case for MBRF20H100CT
+V
DD
I
L
10 mH COIL
BV
DUT
V
D
I
D
MERCURY
SWITCH
I
D
I
L
DUT
S
1
V
DD
t
0
t
1
t
2
t
Figure 11. Test Circuit
Figure 12. Current−Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 11 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V
voltage is low compared to the
DD
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
When S is closed at t the current in the inductor I ramps
1
0
L
up linearly; and energy is stored in the coil. At t the switch
stored in the coil during the time when S was closed,
1
1
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
Equation (2).
EQUATION (1):
BV
and the diode begins to conduct the full load current
DUT
BV
DUT
2
1
2
which now starts to decay linearly through the diode, and
goes to zero at t .
By solving the loop equation at the point in time when S
W
[
LILPK ǒ Ǔ
AVAL
BV
–V
DUT DD
2
1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
EQUATION (2):
2
1
2
of energy from the V power supply while the diode is in
W
[
LI
DD
LPK
AVAL
breakdown (from t to t ) minus any losses due to finite
1
2
component resistances. Assuming the component resistive
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5
MBR20H100CT, MBRB20H100CT, MBRF20H100CT
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE J
NOTES:
C
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
E
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
V
W
−B−
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
8.64
MAX
9.65
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
A
9.65 10.29
4.06
0.51
1.14
7.87
4.83
0.89
1.40
8.89
S
1
2
3
2.54 BSC
−T−
SEATING
PLANE
K
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
2.79
0.64
2.79
1.83
8.13
W
J
G
K
L
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
H
M
N
P
R
S
V
D 3 PL
5.00 REF
2.00 REF
0.99 REF
M
M
T B
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
N
P
R
U
4. CATHODE
L
L
L
M
M
M
F
F
F
VIEW W−W
VIEW W−W
VIEW W−W
1
2
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MBR20H100CT, MBRB20H100CT, MBRF20H100CT
PACKAGE DIMENSIONS
TO−220
PLASTIC
CASE 221A−09
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
ISSUE AB
SEATING
PLANE
−T−
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
0.508
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
C
B
F
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.020
0.235
0.000
0.045
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
T
S
4
A
K
Q
Z
G
H
J
1
2
3
U
K
L
H
N
Q
R
S
T
L
R
U
V
Z
V
J
−−− 0.080
2.04
STYLE 6:
PIN 1. ANODE
G
D
2. CATHODE
3. ANODE
4. CATHODE
N
TO−220 FULLPAK
CASE 221D−03
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
2. CONTROLLING DIMENSION: INCH
3. 221D−01 THRU 221D−02 OBSOLETE, NEW
STANDARD 221D−03.
−T−
−B−
C
F
S
INCHES
DIM MIN MAX
MILLIMETERS
MIN
15.88
10.37
4.57
MAX
16.12
10.63
4.83
Q
A
B
C
D
F
0.625
0.408
0.180
0.026
0.116
0.635
0.418
0.190
0.031
0.119
U
A
0.65
2.95
0.78
3.02
1
2 3
G
H
J
0.100 BSC
2.54 BSC
H
0.125
0.018
0.530
0.048
0.135
0.025
0.540
0.053
3.18
0.45
3.43
0.63
−Y−
K
K
L
13.47
1.23
13.73
1.36
N
Q
R
S
U
0.200 BSC
5.08 BSC
0.124
0.099
0.101
0.238
0.128
0.103
0.113
0.258
3.15
2.51
2.57
6.06
3.25
2.62
2.87
6.56
G
N
J
R
L
D 3 PL
STYLE 3:
PIN 1. ANODE
M
M
2. CATHODE
3. ANODE
0.25 (0.010)
B
Y
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MBR20H100CT/D
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