MBT3904DW1T3G [ONSEMI]
双 NPN 双极晶体管;
| 型号： | MBT3904DW1T3G |
| 厂家： | 
ONSEMI |
| 描述： | 双 NPN 双极晶体管 放大器 PC 光电二极管 小信号双极晶体管 |
| 文件： | 总8页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBT3904DW1T1G,
MBT3904DW2T1G,
SMBT3904DW1T1G
Dual General Purpose
Transistors
http://onsemi.com
The MBT3904DW1T1G and MBT3904DW2T1G devices are a
spin−off of our popular SOT−23/SOT−323 three−leaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT−363 six−leaded surface mount package. By putting two
discrete devices in one package, this device is ideal for low−power
surface mount applications where board space is at a premium.
MARKING
DIAGRAM
6
SOT−363/SC−88/
SC70−6
XX MG
6
G
CASE 419B
Features
1
1
• h , 100−300
FE
XX=MA for MBT3904DW1T1G
MJ for MBT3904DW2T1G
M =Date Code
• Low V
, ≤ 0.4 V
CE(sat)
• Simplifies Circuit Design
G
= Pb−Free Package
• Reduces Board Space
(Note: Microdot may be in either location)
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
(3)
(2)
(1)
Q
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Q
1
2
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
(4)
(5)
(6)
MBT3904DW1T1
STYLE 1
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
40
Unit
Vdc
(3)
(2)
(1)
V
CEO
V
CBO
V
EBO
60
Vdc
Q
2
Q
1
6.0
Vdc
Collector Current − Continuous
Electrostatic Discharge
I
200
mAdc
C
ESD
HBM Class 2
MM Class B
(4)
(5)
(6)
MBT3904DW2T1
STYLE 27
Stresses exceeding Maximum Ratings may damage the device. Maximum Rat-
ings are stress ratings only. Functional operation above the Recommended Op-
erating Conditions is not implied. Extended exposure to stresses above the Re-
commended Operating Conditions may affect device reliability.
ORDERING INFORMATION
†
Device
Shipping
Package
THERMAL CHARACTERISTICS
MBT3904DW1T1G
3000 /
Tape & Reel
SOT−363
(Pb−Free)
Characteristic
Symbol
Max
Unit
Total Package Dissipation (Note 1)
T = 25°C
A
P
150
mW
D
SMBT3904DW1T1G SOT−363
(Pb−Free)
3000 /
Tape & Reel
Thermal Resistance,
Junction−to−Ambient
R
833
°C/W
°C
q
JA
MBT3904DW2T1G
3000 /
Tape & Reel
SOT−363
(Pb−Free)
Junction and Storage
Temperature Range
T , T
J
−55 to +150
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
October, 2012 − Rev. 9
MBT3904DW1T1/D
MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
(I = 1.0 mAdc, I = 0)
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
40
60
6.0
−
−
−
C
B
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
Vdc
−
E
C
Base Cutoff Current
(V = 30 Vdc, V = 3.0 Vdc)
I
BL
nAdc
nAdc
50
50
CE
EB
Collector Cutoff Current
(V = 30 Vdc, V = 3.0 Vdc)
I
CEX
−
CE
EB
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
−
(I = 0.1 mAdc, V = 1.0 Vdc)
40
70
−
−
C
CE
(I = 1.0 mAdc, V = 1.0 Vdc)
C
CE
(I = 10 mAdc, V = 1.0 Vdc)
100
60
300
−
C
CE
(I = 50 mAdc, V = 1.0 Vdc)
C
CE
(I = 100 mAdc, V = 1.0 Vdc)
30
−
C
CE
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
0.2
0.3
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
0.65
−
0.85
0.95
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
MHz
pF
T
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
300
−
−
C
CE
Output Capacitance
C
obo
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
4.0
8.0
CB
E
Input Capacitance
C
pF
ibo
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
−
EB
C
Input Impedance
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
CE
h
k W
ie
re
fe
1.0
2.0
10
12
C
−4
Voltage Feedback Ratio
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
h
h
X 10
−
0.5
0.1
8.0
10
CE
C
Small−Signal Current Gain
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
100
100
400
400
CE
C
Output Admittance
h
mmhos
dB
oe
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
1.0
3.0
40
60
CE
C
Noise Figure
NF
(V = 5.0 Vdc, I = 100 mAdc, R = 1.0 k W, f = 1.0 kHz)
−
−
5.0
4.0
CE
C
S
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
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2
MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G
SWITCHING CHARACTERISTICS
Characteristic
(V = 3.0 Vdc, V = −0.5 Vdc)
Symbol
Min
−
Max
35
Unit
Delay Time
Rise Time
Storage Time
Fall Time
t
d
CC
BE
ns
(I = 10 mAdc, I = 1.0 mAdc)
t
r
−
35
C
B1
(V = 3.0 Vdc, I = 10 mAdc)
t
s
−
200
50
CC
C
ns
(I = I = 1.0 mAdc)
t
f
−
B1
B2
+3 V
+3 V
DUTY CYCLE = 2%
300 ns
t
1
10 < t < 500 ms
1
+10.9 V
DUTY CYCLE = 2%
+10.9 V
< 1 ns
275
275
10 k
10 k
0
-ꢀ0.5 V
C < 4 pF*
s
C < 4 pF*
s
1N916
-ꢀ9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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3
MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G
TYPICAL TRANSIENT CHARACTERISTICS
T = 25°C
J
T = 125°C
J
10
5000
V
= 40 V
CC
I /I = 10
3000
2000
7.0
C B
5.0
1000
700
C
ibo
500
3.0
2.0
Q
T
300
200
C
obo
Q
A
100
70
1.0
0.1
50
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
200
200
REVERSE BIAS VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 3. Capacitance
Figure 4. Charge Data
500
500
I /I = 10
C B
V
= 40 V
CC
I /I = 10
300
200
300
200
C B
100
70
100
70
t @ V = 3.0 V
r CC
50
50
30
20
30
20
40 V
15 V
10
10
2.0 V
7
5
7
5
t @ V = 0 V
OB
d
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Turn−On Time
Figure 6. Rise Time
500
500
1
t′ = t - / t
8 f
s
s
V
I
= 40 V
CC
300
200
300
200
I
= I
B1 B2
= I
B1 B2
I /I = 20
C B
I /I = 10
C B
I /I = 20
C B
100
70
100
70
I /I = 20
C B
50
50
I /I = 10
C B
I /I = 10
C B
30
20
30
20
10
10
7
5
7
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. Storage Time
Figure 8. Fall Time
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4
MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
10
8
14
SOURCE RESISTANCE = 200 W
I = 1.0 mA
f = 1.0 kHz
I = 1.0 mA
C
12
10
8
C
I = 0.5 mA
C
SOURCE RESISTANCE = 200 W
I = 0.5 mA
I = 50 mA
C
C
6
4
I = 100 mA
C
SOURCE RESISTANCE = 1.0 k
I = 50 mA
6
4
2
0
C
2
0
SOURCE RESISTANCE = 500 W
I = 100 mA
C
0.1 0.2
0.4
1.0 2.0 4.0
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k OHMS)
S
Figure 9. Noise Figure
Figure 10. Noise Figure
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300
200
100
50
20
10
5
100
70
50
30
2
1
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. Current Gain
Figure 12. Output Admittance
20
10
10
7.0
5.0
5.0
3.0
2.0
2.0
1.0
0.5
1.0
0.7
0.5
0.2
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 13. Input Impedance
Figure 14. Voltage Feedback Ratio
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5
MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G
TYPICAL STATIC CHARACTERISTICS
2.0
1.0
T = +125°C
J
V
CE
= 1.0 V
+25°C
-ꢀ55°C
0.7
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
I , COLLECTOR CURRENT (mA)
C
Figure 15. DC Current Gain
1.0
0.8
0.6
0.4
T = 25°C
J
I = 1.0 mA
C
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 16. Collector Saturation Region
1.2
1.0
0.8
1.0
T = 25°C
J
V
@ I /I =10
C B
BE(sat)
+25°C TO +125°C
-ꢀ55°C TO +25°C
0.5
0
q
FOR V
CE(sat)
VC
V
BE
@ V =1.0 V
CE
0.6
0.4
-ꢀ0.5
-ꢀ1.0
-ꢀ55°C TO +25°C
+25°C TO +125°C
V
@ I /I =10
C B
CE(sat)
q
FOR V
BE(sat)
VB
0.2
0
-ꢀ1.5
-ꢀ2.0
1.0
2.0
5.0
10
20
50
100
200
0
20
40
60
80 100 120 140 160 180 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
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6
MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G
TYPICAL STATIC CHARACTERISTICS
1000
1
10 mSec
100 mSec
V
= 1 V
CE
T = 25°C
A
1.0 mSec
0.1
1.0 Sec
100
10
Thermal
Limit
0.01
0.001
0.1
1
10
100
1000
1
10
, COLLECTOR EMITTER VOLTAGE (V)
CE
100
I , COLLECTOR CURRENT (mA)
V
C
Figure 19. Current Gain Bandwidth Product
Figure 20. Safe Operating Area
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7
MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G
PACKAGE DIMENSIONS
SOT−363/SC−88/SC70−6
CASE 419B−02
ISSUE W
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
e
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
6
1
5
2
4
3
MILLIMETERS
DIM MIN NOM MAX
0.80
INCHES
NOM MAX
1.10 0.031 0.037 0.043
0.10 0.000 0.002 0.004
0.008 REF
MIN
H
−E−
A
0.95
0.05
E
A1 0.00
A3
0.20 REF
0.21
0.14
2.00
1.25
0.65 BSC
0.20
2.10
b
C
D
E
e
0.10
0.10
1.80
1.15
0.30 0.004 0.008 0.012
0.25 0.004 0.005 0.010
2.20 0.070 0.078 0.086
1.35 0.045 0.049 0.053
0.026 BSC
0.30 0.004 0.008 0.012
2.20 0.078 0.082 0.086
b 6 PL
M
M
E
0.2 (0.008)
L
0.10
2.00
H
E
A3
STYLE 1:
STYLE 27:
PIN 1. EMITTER 2
2. BASE 2
PIN 1. BASE 2
2. BASE 1
C
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
A
6. COLLECTOR 2
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
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MBT3904DW1T1/D
相关型号：
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