MC1413_06 [ONSEMI]
High Voltage, High Current Darlington Transistor Arrays; 高电压，大电流达林顿晶体管阵列
| 型号： | MC1413_06 |
| 厂家： | 
ONSEMI |
| 描述： | High Voltage, High Current Darlington Transistor Arrays |
| 文件： | 总8页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MC1413, MC1413B,
NCV1413B
High Voltage, High Current
Darlington Transistor Arrays
The seven NPN Darlington connected transistors in these arrays are
well suited for driving lamps, relays, or printer hammers in a variety of
industrial and consumer applications. Their high breakdown voltage
and internal suppression diodes insure freedom from problems
associated with inductive loads. Peak inrush currents to 500 mA
permit them to drive incandescent lamps.
http://onsemi.com
PDIP−16
P SUFFIX
CASE 648
16
The MC1413, B with a 2.7 kW series input resistor is well suited for
systems utilizing a 5.0 V TTL or CMOS Logic.
1
SOIC−16
D SUFFIX
CASE 751B
Features
• Pb−Free Packages are Available*
16
• NCV Prefix for Automotive and Other Applications Requiring Site
1
and Control Changes
ORDERING INFORMATION
1/7 MC1413, B
†
Device
MC1413D
Package
Shipping
2.7 k
5.0 k
Pin 9
SOIC−16
48 Units/Rail
48 Units/Tube
MC1413DG
SOIC−16
(Pb−Free)
3.0 k
MC1413DR2
SOIC−16 2500 Tape & Reel
MC1413DR2G
SOIC−16 2500 Tape & Reel
(Pb−Free)
Figure 1. Representative Schematic Diagram
MC1413P
PDIP−16
25 Units/Rail
25 Units/Rail
MC1413PG
PDIP−16
(Pb−Free)
1
2
3
4
5
6
16
15
14
13
12
11
10
9
MC1413BD
SOIC−16
48 Units/Rail
48 Units/Rail
MC1413BDG
SOIC−16
(Pb−Free)
MC1413BDR2
SOIC−16 2500 Tape & Reel
MC1413BDR2G
SOIC−16 2500 Tape & Reel
(Pb−Free)
MC1413BP
PDIP−16
25 Units/Rail
25 Units/Rail
MC1413BPG
PDIP−16
(Pb−Free)
NCV1413BDR2
SOIC−16 2500 Tape & Reel
NCV1413BDR2G SOIC−16 2500 Tape & Reel
(Pb−Free)
7
8
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Top View)
DEVICE MARKING INFORMATION
See general marking information in the device marking
Figure 2. PIN CONNECTIONS
section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
July, 2006 − Rev. 8
MC1413/D
MC1413, MC1413B, NCV1413B
MAXIMUM RATINGS (T = 25°C, and rating apply to any one device in the package, unless otherwise noted.)
A
Rating
Symbol
Value
50
Unit
V
Output Voltage
V
O
Input Voltage
V
I
30
V
Collector Current − Continuous
Base Current − Continuous
I
500
25
mA
mA
°C
C
I
B
Operating Ambient Temperature Range
T
A
MC1413
−20 to +85
−40 to +85
−40 to +125
MC1413B
NCV1413B
Storage Temperature Range
Junction Temperature
T
−55 to +150
150
°C
°C
stg
T
J
Thermal Resistance, Junction−to−Ambient
Case 648, P Suffix
R
°C/W
q
q
JA
67
Case 751B, D Suffix
100
Thermal Resistance, Junction−to−Case
Case 648, P Suffix
R
°C/W
JC
22
20
Case 751B, D Suffix
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
ESD
V
2000
400
Charged Device Model (CDM)
1500
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
http://onsemi.com
2
MC1413, MC1413B, NCV1413B
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Output Leakage Current
I
mA
CEX
(V = 50 V, T = +85°C)
All Types
All Types
−
−
−
−
100
50
O
A
(V = 50 V, T = +25°C)
O
A
Collector−Emitter Saturation Voltage
(I = 350 mA, I = 500 mA)
V
V
CE(sat)
All Types
All Types
All Types
−
−
−
1.1
0.95
0.85
1.6
1.3
1.1
C
B
(I = 200 mA, I = 350 mA)
C
B
(I = 100 mA, I = 250 mA)
C
B
Input Current − On Condition
(V = 3.85 V)
I
I
mA
V
I(on)
MC1413, B
−
0.93
1.35
Input Voltage − On Condition
V
I(on)
(V = 2.0 V, I = 200 mA)
MC1413, B
MC1413, B
MC1413, B
−
−
−
−
−
−
2.4
2.7
3.0
CE
C
(V = 2.0 V, I = 250 mA)
CE
C
(V = 2.0 V, I = 300 mA)
CE
C
Input Current − Off Condition
All Types
I
50
100
−
mA
I(off)
(I = 500 mA, T = 85°C)
C
A
DC Current Gain
h
FE
1000
−
−
−
(V = 2.0 V, I = 350 mA)
CE
C
Input Capacitance
C
−
−
15
30
pF
I
Turn−On Delay Time
t
on
0.25
1.0
ms
(50% E to 50% E )
I
O
Turn−Off Delay Time
(50% E to 50% E )
t
−
0.25
1.0
ms
mA
V
off
I
O
Clamp Diode Leakage Current
(V = 50 V)
R
T = +25°C
T = +85°C
A
I
−
−
−
−
50
100
A
R
Clamp Diode Forward Voltage
V
−
1.5
2.0
F
(I = 350 mA)
F
NOTE: NCV1413B T = −40°C, T
= +125°C. Guaranteed by design. NCV prefix is for automotive and other applications requiring
low
high
site and change control.
http://onsemi.com
3
MC1413, MC1413B, NCV1413B
TYPICAL PERFORMANCE CURVES − TA = 25°C
400
300
200
400
300
200
100
0
All Types
MC1413, B
100
0
0
1.0
2.0
3.0 4.0 5.0
8.0
9.0
10
11
12
0
50
100
150
200
250
300
350
400
V , INPUT VOLTAGE (V)
I
I , INPUT CURRENT (mA)
I
Figure 3. Output Current versus Input Voltage
Figure 4. Output Current versus Input Current
800
700
2.5
PIN 13
2.0
1.5
600
500
400
300
200
PIN 10
1 Output Conducting at a Time
PIN 16
Maximum
Typical
1.0
0.5
0
All Types
100
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
1.6
, SATURATION VOLTAGE (V)
V , INPUT VOLTAGE (V)
I
CE(sat)
Figure 5. Typical Output Characteristics
Figure 6. Input Characteristics − MC1413, B
1000
700
1
2
3
500
300
200
4
5
6
7
100
10
20
30
% DUTY CYCLE
50
70
100
Figure 7. Maximum Collector Current
versus Duty Cycle
(and Number of Drivers in Use)
http://onsemi.com
4
MC1413, MC1413B, NCV1413B
MARKING DIAGRAMS
PDIP−16
P SUFFIX
CASE 648
16
16
MC1413P
ULN2003A
MC1413BP
ULQ2003A
AWLYYWWG
AWLYYWWG
1
1
SOIC−16
D SUFFIX
CASE 751B
16
1
16
1
16
MC1413DG
AWLYWW
MC1413BDG
AWLYWW
NCV1413BDG
AWLYWW
1
A
= Assembly Location
WL = Wafer Lot
YY, Y = Year
WW = Work Week
G
= Pb−Free Package
http://onsemi.com
5
MC1413, MC1413B, NCV1413B
PACKAGE DIMENSIONS
PDIP−16
P SUFFIX
CASE 648−08
ISSUE T
NOTES:
−A−
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS
WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE
MOLD FLASH.
16
1
9
8
B
S
5. ROUNDED CORNERS OPTIONAL.
INCHES
DIM MIN MAX
0.740 0.770 18.80 19.55
MILLIMETERS
F
C
L
MIN MAX
A
B
C
D
F
0.250 0.270
0.145 0.175
0.015 0.021
6.35
3.69
0.39
1.02
6.85
4.44
0.53
1.77
SEATING
PLANE
−T−
0.040
0.70
G
H
J
K
L
0.100 BSC
2.54 BSC
1.27 BSC
K
M
0.050 BSC
0.008 0.015
0.110 0.130
0.295 0.305
H
J
0.21
0.38
3.30
7.74
10
G
2.80
7.50
0
D 16 PL
M
M
0.25 (0.010)
T A
M
S
0
10
_
_
_
_
0.020 0.040
0.51
1.01
http://onsemi.com
6
MC1413, MC1413B, NCV1413B
PACKAGE DIMENSIONS
SOIC−16
D SUFFIX
CASE 751B−05
ISSUE J
−A−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
16
9
8
−B−
P 8 PL
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
M
S
B
0.25 (0.010)
1
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
G
MILLIMETERS
INCHES
MIN
0.386
DIM MIN
MAX
MAX
0.393
0.157
0.068
0.019
0.049
F
A
B
C
D
F
9.80
3.80
1.35
0.35
0.40
10.00
R X 45
K
_
4.00 0.150
1.75 0.054
0.49 0.014
1.25 0.016
C
G
J
1.27 BSC
0.050 BSC
−T−
SEATING
PLANE
0.19
0.10
0
0.25 0.008
0.25 0.004
0.009
0.009
7
J
M
K
M
P
R
D
16 PL
7
0
_
_
_
_
5.80
0.25
6.20 0.229
0.50 0.010
0.244
0.019
M
S
S
A
0.25 (0.010)
T
B
http://onsemi.com
7
MC1413, MC1413B, NCV1413B
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MC1413/D
相关型号：
©2020 ICPDF网 联系我们和版权申明