MC33164P-003 [ONSEMI]

电压监控器,微功耗欠电压感应电路;
MC33164P-003
型号: MC33164P-003
厂家: ONSEMI    ONSEMI
描述:

电压监控器,微功耗欠电压感应电路

监控 电源管理电路 电源电路
文件: 总15页 (文件大小:144K)
中文:  中文翻译
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MC34164, MC33164,  
NCV33164  
Micropower Undervoltage  
Sensing Circuits  
The MC34164 series are undervoltage sensing circuits specifically  
designed for use as reset controllers in portable microprocessor based  
systems where extended battery life is required. These devices offer  
the designer an economical solution for low voltage detection with a  
single external resistor. The MC34164 series features a bandgap  
reference, a comparator with precise thresholds and built−in hysteresis  
to prevent erratic reset operation, an open collector reset output  
capable of sinking in excess of 6.0 mA, and guaranteed operation  
down to 1.0 V input with extremely low standby current. The MC  
devices are packaged in 3−pin TO−226AA, micro size TSOP−5, 8−pin  
SOIC−8 and Micro8surface mount packages. The NCV device is  
packaged in SOIC−8.  
Applications include direct monitoring of the 3.0 V or 5.0 V  
MPU/logic power supply used in appliance, automotive, consumer,  
and industrial equipment.  
Temperature Compensated Reference  
Monitors 3.0 V (MC34164−3) or 5.0 V (MC34164−5) Power Supplies  
Precise Comparator Thresholds Guaranteed Over Temperature  
Comparator Hysteresis Prevents Erratic Reset  
http://onsemi.com  
8
1
1
2
3
TO−226AA  
P SUFFIX  
CASE 29  
SOIC−8  
D SUFFIX  
CASE 751  
5
8
1
1
TSOP−5  
SN SUFFIX  
CASE 483  
Micro8  
DM SUFFIX  
CASE 846A  
Reset Output Capable of Sinking in Excess of 6.0 mA  
Internal Clamp Diode for Discharging Delay Capacitor  
Guaranteed Reset Operation With 1.0 V Input  
PIN CONNECTIONS  
Extremely Low Standby Current: As Low as 9.0 A  
1
2
3
4
8
7
6
5
Reset  
Input  
N.C.  
N.C.  
N.C.  
N.C.  
Economical TO−226AA, TSOP−5, SOIC−8 and Micro8 Surface  
Mount Packages  
N.C.  
NCV Prefix for Automotive and Other Applications Requiring Site  
and Control Changes  
Ground  
(Top View)  
Pb−Free Packages are Available  
Input  
TSOP−5  
TO−226AA  
Pin 1. Ground  
2. Input  
Pin 1. Reset  
2. Input  
3. Ground  
Reset  
3. Reset  
4. NC  
5. NC  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
1.2 V  
Sink Only  
Positive True Logic  
ref  
=
DEVICE MARKING INFORMATION  
See general marking information in the device marking  
section on page 9 of this data sheet.  
GND  
Figure 1. Representative Block Diagram  
This device contains 28 active transistors.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
August, 2005 − Rev. 16  
MC34164/D  
MC34164, MC33164, NCV33164  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
V
Power Input Supply Voltage  
Reset Output Voltage  
V
−1.0 to 12  
−1.0 to 12  
in  
O
V
V
Reset Output Sink Current  
I
Internally  
Limited  
mA  
Sink  
Clamp Diode Forward Current, Reset to Input Pin (Note 1)  
IF  
100  
mA  
Power Dissipation and Thermal Characteristics  
P Suffix, Plastic Package  
P
700  
178  
mW  
°C/W  
D
Maximum Power Dissipation @ T = 25°C  
A
R
Thermal Resistance, Junction−to−Air  
D Suffix, Plastic Package  
JA  
700  
178  
mW  
°C/W  
Maximum Power Dissipation @ T = 25°C  
P
A
D
Thermal Resistance, Junction−to−Air  
DM Suffix, Plastic Package  
R
JA  
520  
240  
mW  
°C/W  
P
Maximum Power Dissipation @ T = 25°C  
D
A
Thermal Resistance, Junction−to−Air  
R
JA  
Operating Junction Temperature  
T
+150  
°C  
°C  
J
Operating Ambient Temperature Range  
MC34164 Series  
T
A
0 to +70  
MC33164 Series, NCV33164  
− 40 to +125  
Storage Temperature Range  
T
stg  
− 65 to +150  
°C  
Electrostatic Discharge Sensitivity (ESD)  
Human Body Model (HBM)  
Machine Model (MM)  
ESD  
V
4000  
200  
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit  
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,  
damage may occur and reliability may be affected.  
MC34164−3, MC33164−3 SERIES, NCV33164−3  
ELECTRICAL CHARACTERISTICS (For typical values T = 25°C, for min/max values T is the operating ambient temperature  
A
A
range that applies [Notes 2 & 3], unless otherwise noted.)  
Characteristic  
COMPARATOR  
Symbol  
Min  
Typ  
Max  
Unit  
Threshold Voltage  
High State Output (V Increasing)  
Low State Output (V Decreasing)  
V
V
2.55  
2.55  
0.03  
2.71  
2.65  
0.06  
2.80  
2.80  
IH  
in  
V
in  
IL  
Hysteresis (I  
= 100 A)  
Sink  
V
H
RESET OUTPUT  
Output Sink Saturation  
V
V
OL  
0.14  
0.1  
0.4  
0.3  
(V = 2.4 V, I  
= 1.0 mA)  
in  
Sink  
Sink  
(V = 1.0 V, I  
in  
= 0.25 mA)  
Output Sink Current (V , Reset = 2.4 V)  
I
6.0  
12  
30  
mA  
in  
Sink  
I
Output Off−State Leakage  
R(leak)  
A
0.02  
0.02  
0.5  
1.0  
(V , Reset = 3.0 V)  
(V , Reset = 10 V)  
in  
in  
Clamp Diode Forward Voltage, Reset to Input Pin (I = 5.0 mA)  
V
0.6  
0.9  
1.2  
V
F
F
TOTAL DEVICE  
Operating Input Voltage Range  
V
in  
1.0 to 10  
V
Quiescent Input Current  
I
A
in  
9.0  
24  
15  
40  
V
in  
V
in  
= 3.0 V  
= 6.0 V  
1. Maximum package power dissipation limits must be observed.  
2. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.  
3. T  
=
=
0°C for MC34164  
− 40°C for MC33164, NCV33164  
T
= +70°C for MC34164  
= +125°C for MC33164, NCV33164  
low  
high  
http://onsemi.com  
2
 
MC34164, MC33164, NCV33164  
MC34164−5, MC33164−5 SERIES, NCV33164−5  
ELECTRICAL CHARACTERISTICS (For typical values T = 25°C, for min/max values T is the operating ambient temperature  
A
A
range that applies [Notes 5 & 6], unless otherwise noted.)  
Characteristic  
COMPARATOR  
Symbol  
Min  
Typ  
Max  
Unit  
Threshold Voltage  
High State Output (V Increasing)  
Low State Output (V Decreasing)  
V
V
4.15  
4.15  
0.02  
4.33  
4.27  
0.09  
4.45  
4.45  
IH  
in  
V
in  
IL  
Hysteresis (I  
= 100 A)  
Sink  
V
H
RESET OUTPUT  
Output Sink Saturation  
V
V
OL  
0.14  
0.1  
0.4  
0.3  
(V = 4.0 V, I  
= 1.0 mA)  
in  
Sink  
Sink  
(V = 1.0 V, I  
in  
= 0.25 mA)  
Output Sink Current (V , Reset = 4.0 V)  
I
7.0  
20  
50  
mA  
in  
Sink  
I
Output Off−State Leakage  
R(leak)  
A
0.02  
0.02  
0.5  
2.0  
(V , Reset = 5.0 V)  
(V , Reset = 10 V)  
in  
in  
Clamp Diode Forward Voltage, Reset to Input Pin (I = 5.0 mA)  
V
0.6  
0.9  
1.2  
V
F
F
TOTAL DEVICE  
Operating Input Voltage Range  
Quiescent Input Current  
V
1.0 to 10  
V
in  
I
A
in  
12  
32  
20  
50  
V
in  
V
in  
= 5.0 V  
= 10 V  
4. Maximum package power dissipation limits must be observed.  
5. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.  
6. T  
= 0°C for MC34164  
T
= +70°C for MC34164  
low  
high  
= − 40°C for MC33164, NCV33164  
= +125°C for MC33164, NCV33164  
7. NCV prefix is for automotive and other applications requiring site and change control.  
10  
10  
R = 82 k to V  
L
R = 82 k to V  
L in  
in  
8.0  
6.0  
8.0  
6.0  
T
= 25°C  
T
= 25°C  
A
A
4.0  
2.0  
0
4.0  
2.0  
0
0
2.0  
4.0  
6.0  
8.0  
10  
0
2.0  
4.0  
6.0  
8.0  
10  
V , INPUT VOLTAGE (V)  
in  
V , INPUT VOLTAGE (V)  
in  
Figure 2. MC3X164−3 Reset Output  
Voltage versus Input Voltage  
Figure 3. MC3X164−5 Reset Output  
Voltage versus Input Voltage  
http://onsemi.com  
3
 
MC34164, MC33164, NCV33164  
5.0  
4.0  
5.0  
4.0  
3.0  
2.0  
1.0  
3.0  
2.0  
1.0  
R = 82 k to V  
L
R = 82 k to V  
L
in  
in  
T
A
= 25°C  
T
A
= 25°C  
0
2.62  
0
4.22  
2.66  
2.70  
2.74  
2.78  
4.26  
4.30  
4.34  
4.38  
V , INPUT VOLTAGE (V)  
in  
V , INPUT VOLTAGE (V)  
in  
Figure 4. MC3X164−3 Reset Output  
Voltage versus Input Voltage  
Figure 5. MC3X164−5 Reset Output  
Voltage versus Input Voltage  
2.76  
2.72  
2.68  
2.64  
2.60  
4.36  
4.32  
4.28  
4.24  
4.20  
Upper Threshold  
High State Output  
Upper Threshold  
High State Output  
Lower Threshold  
Low State Output  
Lower Threshold  
Low State Output  
−ꢀ50 −ꢀ25  
0
25  
50  
75  
100  
125  
−ꢀ50 −ꢀ25  
0
25  
50  
75  
100  
125  
T , AMBIENT TEMPERATURE (°C)  
A
T , AMBIENT TEMPERATURE (°C)  
A
Figure 6. MC3X164−3 Comparator Threshold  
Voltage versus Temperature  
Figure 7. MC3X164−5 Comparator Threshold  
Voltage versus Temperature  
50  
40  
30  
50  
40  
30  
T
A
= 25°C  
T
A
= 25°C  
T
A
= 0°C  
20  
10  
0
20  
10  
0
T
A
= 0°C  
T
= 70°C  
A
T
A
= 70°C  
0
2.0  
4.0  
6.0  
8.0  
10  
0
2.0  
4.0  
6.0  
8.0  
10  
V , INPUT VOLTAGE (V)  
in  
V , INPUT VOLTAGE (V)  
in  
Figure 8. MC3X164−3 Input Current  
versus Input Voltage  
Figure 9. MC3X164−5 Input Current  
versus Input Voltage  
http://onsemi.com  
4
MC34164, MC33164, NCV33164  
4.0  
4.0  
T
A
= 25°C  
V
in  
= 2.4 V  
V , Reset = 4 V  
in  
T
A
= 70°C  
T
A
= 0°C  
3.0  
2.0  
3.0  
2.0  
T
A
= 70°C  
T
A
= 25°C  
T
= 25°C  
T
= 0°C  
A
A
T
= 25°C  
= 0°C  
A
T
A
T = 0°C  
A
1.0  
0
1.0  
0
T
A
= 70°C  
T = 70°C  
A
0
4.0  
8.0  
12  
16  
20  
0
4.0  
8.0  
12  
16  
20  
V
, SINK CURRENT (mA)  
Sink  
I , SINK CURRENT (mA)  
Sink  
Figure 10. MC3X164−3 Reset Output  
Saturation versus Sink Current  
Figure 11. MC3X164−5 Reset Output  
Saturation versus Sink Current  
32  
24  
16  
8.0  
0
V
= 5.0 V to 4.0 V  
in  
R = 43 k  
Reset  
L
V
T
= 0 V  
= 25°C  
T
A
= 25°C  
in  
90%  
A
V
in  
5.0 V  
4.0 V  
V
in  
43k  
5.0V  
4.0V  
Reset  
10  
%
Ref  
0
0.4  
0.8  
V , FORWARD VOLTAGE (V)  
1.2  
1.6  
5.0 s/DIV  
F
Figure 12. Clamp Diode Forward Current  
versus Voltage  
Figure 13. Reset Delay Time  
(MC3X164−5 Shown)  
R
Input  
Power  
Supply  
Reset  
Microprocessor  
Circuit  
Reset  
C
DLY  
1
1.2 V  
ref  
t
= R  
In  
V
ǒ Ǔ  
th(MPU)  
DLY  
CDLY  
1 −  
GND  
V
in  
A time delayed reset can be accomplished with the addition of C . For systems with extremely fast power  
is  
DLY  
supply rise times (<ꢀ500 ns) it is recommended that the RCDLY time constant be greater than 5.0 s. V  
the microprocessor reset input threshold.  
th(MPU)  
Figure 14. Low Voltage Microprocessor Reset  
http://onsemi.com  
5
MC34164, MC33164, NCV33164  
Test Data  
V  
R
H
V
(mV)  
R
R
L
(k)  
H
th  
H
I
in  
V
in  
(mV)  
()  
R
L
Power  
Supply  
Microprocessor  
Circuit  
60  
0
0
43  
10  
6.8  
4.3  
10  
6.8  
4.3  
10  
8.2  
6.8  
5.6  
4.3  
Reset  
103  
123  
160  
155  
199  
280  
262  
306  
357  
421  
530  
1.0  
1.0  
1.0  
2.2  
2.2  
2.2  
4.7  
4.7  
4.7  
4.7  
4.7  
100  
100  
100  
220  
220  
220  
470  
470  
470  
470  
470  
4.3 R  
H
1.2 V  
ref  
V ≈  
+ 0.06  
H
R
L
−ꢀ6  
MC3X164−5  
GND  
V
10 R x 10ꢀ  
H
th(lower)  
where: R 1.0 kꢃ  
H
43 kR 4.3 kꢃ  
L
Comparator hysteresis can be increased with the addition of resistor R . The hysteresis equation has been simplified and does not account for the change of input current  
will be observed due to I which is typically 10 A at 4.3 V. The  
th(lower) in  
H
as V crosses the comparator threshold (Figure 8). An increase of the lower threshold V  
I
in  
in  
equations are accurate to 10% with R less than 1.0 kand R between 4.3 kand 43 k.  
H
L
Figure 15. Low Voltage Microprocessor Reset With Additional Hysteresis  
(MC3X164−5 Shown)  
Input  
1.0 k  
Input  
Power  
Supply  
Reset  
Reset  
Solar  
Cells  
1.2 V  
ref  
1.2 V  
ref  
GND  
GND  
Figure 16. Voltage Monitor  
Figure 17. Solar Powered Battery Charger  
V
CC  
R
L
MTP3055EL  
270  
4.3V  
Input  
Reset  
Overheating of the logic level power MOSFET due to insufficient  
gate voltage can be prevented with the above circuit. When the  
input signal is below the 4.3 V threshold of the MC3X164−5, its  
2
output grounds the gate of the L MOSFET.  
1.2 V  
ref  
GND MC3X164−5  
Figure 18. MOSFET Low Voltage Gate Drive Protection Using the MC3X164−5  
http://onsemi.com  
6
MC34164, MC33164, NCV33164  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MC33164D−3  
SOIC−8  
98 Units / Rail  
MC33164D−3G  
SOIC−8  
(Pb−Free)  
MC33164D−3R2  
SOIC−8  
MC33164D−3R2G  
SOIC−8  
(Pb−Free)  
2500 Units / Tape & Reel  
NCV33164D−3R2*  
NCV33164D−3R2G*  
SOIC−8  
SOIC−8  
(Pb−Free)  
MC33164DM−3R2  
MC33164DM−3R2G  
Micro8  
4000 Units / Tape & Reel  
2000 Units / Box  
Micro8  
(Pb−Free)  
MC33164P−3  
TO−92  
MC33164P−3G  
TO−92  
(Pb−Free)  
MC33164P−3RA  
TO−92  
2000 Units / Tape & Reel  
2000 Units / Pack  
MC33164P−3RAG  
TO−92  
(Pb−Free)  
MC33164P−3RP  
TO−92  
MC33164P−3RPG  
TO−92  
(Pb−Free)  
MC33164D−5  
SOIC−8  
98 Units / Rail  
MC33164D−5G  
SOIC−8  
(Pb−Free)  
MC33164D−5R2  
SOIC−8  
MC33164D−5R2G  
SOIC−8  
(Pb−Free)  
2500 Units / Tape & Reel  
NCV33164D−5R2*  
NCV33164D−5R2G*  
SOIC−8  
SOIC−8  
(Pb−Free)  
MC33164DM−5R2  
MC33164DM−5R2G  
Micro8  
4000 Units / Tape & Reel  
2000 Units / Box  
Micro8  
(Pb−Free)  
MC33164P−5  
TO−92  
MC33164P−5G  
TO−92  
(Pb−Free)  
MC33164P−5RA  
TO−92  
2000 Units / Tape & Reel  
2000 Units / Pack  
MC33164P−5RAG  
TO−92  
(Pb−Free)  
MC33164P−5RP  
TO−92  
MC33164P−5RPG  
TO−92  
(Pb−Free)  
MC34164D−3  
SOIC−8  
98 Units / Rail  
MC34164D−3G  
SOIC−8  
(Pb−Free)  
MC34164D−3R2  
SOIC−8  
2500 Units / Tape & Reel  
MC34164D−3R2G  
SOIC−8  
(Pb−Free)  
http://onsemi.com  
7
MC34164, MC33164, NCV33164  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MC34164DM−3R2  
MC34164DM−3R2G  
Micro8  
4000 Units / Tape & Reel  
Micro8  
(Pb−Free)  
MC34164P−3  
TO−92  
2000 Units / Box  
2000 Units / Box  
2000 Units / Pack  
2000 Units / Pack  
MC34164P−3G  
TO−92  
(Pb−Free)  
MC34164P−3RP  
TO−92  
MC34164P−3RPG  
TO−92  
(Pb−Free)  
MC34164D−5  
SOIC−8  
98 Units / Rail  
MC34164D−5G  
SOIC−8  
(Pb−Free)  
MC34164D−5R2  
SOIC−8  
2500 Units / Tape & Reel  
2500 Units / Tape & Reel  
4000 Units / Tape & Reel  
4000 Units / Tape & Reel  
MC34164D−5R2G  
SOIC−8  
(Pb−Free)  
MC34164DM−5R2  
MC34164DM−5R2G  
Micro8  
Micro8  
(Pb−Free)  
MC34164SN−5T1  
MC34164SN−5T1G  
TSOP−5  
3000 Units / Tape & Reel  
TSOP−5  
(Pb−Free)  
MC34164P−5  
TO−92  
2000 Units / Box  
2000 Units / Box  
MC34164P−5G  
TO−92  
(Pb−Free)  
MC34164P−5RA  
TO−92  
2000 Units / Tape & Reel  
MC34164P−5RAG  
TO−92  
(Pb−Free)  
MC34164P−5RP  
TO−92  
2000 Units / Pack  
2000 Units / Pack  
MC34164P−5RPG  
TO−92  
(Pb−Free)  
*NCV33164: T = −40°C, T  
= +125°C. Guaranteed by design. NCV prefix is for automotive and other applications requiring  
high  
low  
site and change control.  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
8
MC34164, MC33164, NCV33164  
PIN CONNECTIONS AND MARKING DIAGRAMS  
TO−92  
MC3x164P−yRA  
MC3x164P−yRP  
MC3x164P−y  
CASE 29  
TSOP−5  
SN SUFFIX  
CASE 483  
SOIC−8  
D SUFFIX  
CASE 751  
Micro8  
MC33164DM  
CASE 846A  
Micro8  
MC34164DM  
CASE 846A  
8
8
5
4
MC3x1  
64P−y  
YWW  
8
1
MIy0  
YWW  
AWL  
MCy0  
YWW  
AWL  
3x164  
ALYWy  
G
SRCYWG  
1
2 3  
1
1
1 2 3  
SRC  
= Device Code  
x
y
A
= Device Number 3 or 4  
= Suffix Number 3 or 5  
= Assembly Location  
WL, L = Wafer Lot  
YY, Y = Year  
WW, W = Work Week  
G
= Pb−Free  
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9
MC34164, MC33164, NCV33164  
PACKAGE DIMENSIONS  
TO−226AA  
P SUFFIX  
CASE 29−11  
ISSUE AL  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A
B
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
R
P
L
INCHES  
DIM MIN MAX  
MILLIMETERS  
SEATING  
PLANE  
K
MIN  
4.45  
4.32  
3.18  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
−−−  
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
0.205  
0.210  
0.165  
0.021 0.407  
D
0.055  
0.105  
0.020  
−−− 12.70  
−−−  
0.105  
1.15  
2.42  
0.39  
X X  
G
J
H
V
K
L
6.35  
2.04  
−−−  
2.93  
3.43  
−−−  
C
N
P
R
V
2.66  
2.54  
−−−  
−−− 0.100  
SECTION X−X  
0.115  
0.135  
−−−  
−−−  
1
N
−−−  
N
http://onsemi.com  
10  
MC34164, MC33164, NCV33164  
PACKAGE DIMENSIONS  
TSOP−5  
SN SUFFIX  
PLASTIC PACKAGE  
CASE 483−02  
ISSUE D  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
D
2. CONTROLLING DIMENSION: MILLIMETER.  
3. MAXIMUM LEAD THICKNESS INCLUDES  
LEAD FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS  
OF BASE MATERIAL.  
5
4
3
B
S
1
2
4. A AND B DIMENSIONS DO NOT INCLUDE  
MOLD FLASH, PROTRUSIONS, OR GATE  
BURRS.  
L
G
A
MILLIMETERS  
INCHES  
MIN MAX  
0.1142 0.1220  
DIM  
A
B
C
D
G
H
J
K
L
MIN  
2.90  
1.30  
0.90  
0.25  
0.85  
0.013  
0.10  
0.20  
1.25  
0
MAX  
3.10  
1.70 0.0512 0.0669  
1.10 0.0354 0.0433  
0.50 0.0098 0.0197  
1.05 0.0335 0.0413  
0.100 0.0005 0.0040  
0.26 0.0040 0.0102  
0.60 0.0079 0.0236  
1.55 0.0493 0.0610  
J
C
0.05 (0.002)  
M
K
H
M
S
10  
0
10  
_
_
_
_
2.50  
3.00 0.0985 0.1181  
SOLDERING FOOTPRINT*  
1.9  
0.074  
0.95  
0.037  
2.4  
0.094  
1.0  
0.039  
0.7  
0.028  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
11  
MC34164, MC33164, NCV33164  
PACKAGE DIMENSIONS  
SOIC−8  
D SUFFIX  
CASE 751−07  
ISSUE AG  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A AND B DO NOT INCLUDE  
MOLD PROTRUSION.  
−X−  
A
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)  
PER SIDE.  
8
5
4
5. DIMENSION D DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.127 (0.005) TOTAL  
IN EXCESS OF THE D DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW  
STANDARD IS 751−07.  
S
M
M
B
0.25 (0.010)  
Y
1
K
−Y−  
G
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN  
MAX  
0.197  
0.157  
0.069  
0.020  
A
B
C
D
G
H
J
K
M
N
S
4.80  
3.80  
1.35  
0.33  
5.00 0.189  
4.00 0.150  
1.75 0.053  
0.51 0.013  
C
N X 45  
_
SEATING  
PLANE  
−Z−  
1.27 BSC  
0.050 BSC  
0.10 (0.004)  
0.10  
0.19  
0.40  
0
0.25 0.004  
0.25 0.007  
1.27 0.016  
0.010  
0.010  
0.050  
8
0.020  
0.244  
M
J
H
D
8
0
_
_
_
_
0.25  
5.80  
0.50 0.010  
6.20 0.228  
M
S
S
X
0.25 (0.010)  
Z
Y
SOLDERING FOOTPRINT*  
1.52  
0.060  
7.0  
4.0  
0.275  
0.155  
0.6  
0.024  
1.270  
0.050  
mm  
inches  
ǒ
Ǔ
SCALE 6:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
12  
MC34164, MC33164, NCV33164  
PACKAGE DIMENSIONS  
Micro8  
DM SUFFIX  
CASE 846A−02  
ISSUE F  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
−A−  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,  
PROTRUSIONS OR GATE BURRS. MOLD FLASH,  
PROTRUSIONS OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
−B−  
K
4. DIMENSION B DOES NOT INCLUDE INTERLEAD  
FLASH OR PROTRUSION. INTERLEAD FLASH OR  
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)  
PER SIDE.  
5. 846A−01 OBSOLETE, NEW STANDARD 846A−02.  
PIN 1 ID  
G
MILLIMETERS  
INCHES  
D 8 PL  
DIM MIN  
MAX  
3.10  
3.10  
1.10  
0.40  
MIN  
MAX  
0.122  
0.122  
M
S
S
0.08 (0.003)  
T
B
A
A
B
C
D
G
H
J
2.90  
2.90  
−−−  
0.25  
0.114  
0.114  
−−− 0.043  
0.010 0.016  
0.026 BSC  
0.002  
0.005  
0.187  
0.016  
0.65 BSC  
SEATING  
PLANE  
0.05  
0.13  
4.75  
0.40  
0.15  
0.23  
5.05  
0.70  
0.006  
0.009  
0.199  
0.028  
−T−  
C
0.038 (0.0015)  
K
L
L
J
H
SOLDERING FOOTPRINT*  
1.04  
8X 0.041  
0.38  
8X  
0.015  
3.20  
4.24  
5.28  
0.126  
0.167 0.208  
0.65  
6X0.0256  
SCALE 8:1  
mm  
inches  
ǒ
Ǔ
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
13  
MC34164, MC33164, NCV33164  
Micro8 is a trademark of International Rectifier.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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For additional information, please contact your  
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MC34164/D  
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