MC34001P [ONSEMI]
JFET INPUT OPERATIONAL AMPLIFIERS; JFET输入运算放大器型号: | MC34001P |
厂家: | ONSEMI |
描述: | JFET INPUT OPERATIONAL AMPLIFIERS |
文件: | 总12页 (文件大小:167K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Order this document by MC34001/D
These low cost JFET input operational amplifiers combine two
state–of–the–art analog technologies on a single monolithic integrated
circuit. Each internally compensated operational amplifier has well matched
high voltage JFET input devices for low input offset voltage. The BIFET
technology provides wide bandwidths and fast slew rates with low input bias
currents, input offset currents, and supply currents.
JFET INPUT
OPERATIONAL AMPLIFIERS
The Motorola BIFET family offers single, dual and quad operational
amplifiers which are pin–compatible with the industry standard MC1741,
MC1458, and the MC3403/LM324 bipolar devices. The MC34001/
34002/34004 series are specified from 0° to +70°C.
8
8
1
1
• Input Offset Voltage Options of 5.0 mV and 10 mV Maximum
• Low Input Bias Current: 40 pA
• Low Input Offset Current: 10 pA
• Wide Gain Bandwidth: 4.0 MHz
• High Slew Rate: 13 V/µs
P SUFFIX
PLASTIC PACKAGE
CASE 626
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
PIN CONNECTIONS
• Low Supply Current: 1.4 mA per Amplifier
1
2
3
4
8
Offset Null
Inv. Input
NC
12
• High Input Impedance: 10
Ω
7
V
CC
• High Common Mode and Supply Voltage Rejection Ratios: 100 dB
• Industry Standard Pinouts
+
Noninv. Input
Output
6
5
V
Offset Null
EE
MC34001 (Top View)
1
2
3
4
8
7
6
5
Output A
Inputs A
V
CC
Output B
–
+
–
+
Inputs B
V
EE
MC34002 (Top View)
P SUFFIX
PLASTIC PACKAGE
CASE 646
14
1
PIN CONNECTIONS
Output 1
Inputs 1
1
2
3
4
5
14
13
ORDERING INFORMATION
Output 4
Inputs 4
Op Amp
Function
Operating
Temperature Range
–
+
–
+
Device
Package
SO–8
1
4
3
12
11
10
MC34001BD, D
MC34001BP, P
MC34002BD, D
MC34002BP, P
MC34004BP, P
V
V
CC
Single
T
= 0° to+ 70°C
EE
Inputs 3
Output 3
A
Plastic DIP
SO–8
+
–
+
–
Inputs 2
Output 2
2
6
7
9
8
Dual
T
= 0° to +70°C
T = 0° to +70°C
A
A
Plastic DIP
Plastic DIP
Quad
MC34004 (Top View)
Motorola, Inc. 1996
Rev 1
MC34001, B MC34002, B MC34004, B
MAXIMUM RATINGS
Rating
Symbol
V , V
CC EE
Value
±18
Unit
V
Supply Voltage
Differential Input Voltage (Note 1)
Input Voltage Range
V
±30
V
ID
V
t
±16
V
IDR
Open Short Circuit Duration
Operating Ambient Temperature Range
Operating Junction Temperature
Storage Temperature Range
Continuous
0 to +70
150
SC
T
°C
°C
°C
A
T
J
T
stg
–65 to +150
NOTES: 1. Unless otherwise specified, the absolute maximum negative input voltage is equal to the
negative power supply.
ELECTRICAL CHARACTERISTICS (V
CC
= +15 V, V
= –15 V, T = 25°C, unless otherwise noted.)
EE A
Characteristics
Symbol
Min
Typ
Max
Unit
Input Offset Voltage (R ≤ 10 k)
MC3400XB
MC3400X
V
IO
mV
S
—
—
3.0
5.0
5.0
10
Average Temperature Coefficient of Input Offset Voltage
≤ 10 k, T = T to T (Note 2)
∆V /∆T
IO
—
10
—
µV/°C
R
S
A
low
high
= 0) (Note 3)
Input Offset Current (V
MC3400XB
I
IO
pA
CM
—
—
25
25
100
100
MC3400X
Input Bias Current (V
MC3400XB
MC3400X
= 0) (Note 3)
I
IB
pA
CM
—
—
50
50
200
200
12
10
Input Resistance
r
i
—
—
Ω
Common Mode Input Voltage Range
V
ICR
±11
—
+15
–12
—
—
V
Large Signal Voltage Gain (V = ±10 V, R = 2.0 k)
MC3400XB
MC3400X
A
VOL
V/mV
V
O
L
50
25
150
100
—
—
Output Voltage Swing
V
O
(R ≥ 10 k)
±12
±10
±14
±13
—
—
L
(R ≥ 2.0 k)
L
Common Mode Rejection Ratio (R ≤ 10 k)
MC3400XB
MC3400X
CMRR
PSRR
dB
S
80
70
100
100
—
—
Supply Voltage Rejection Ratio (R ≤ 10 k) (Note 4)
dB
S
MC3400XB
MC3400X
80
70
100
100
—
—
Supply Current (Each Amplifier)
MC3400XB
MC3400X
I
D
mA
—
—
1.4
1.4
2.5
2.7
Slew Rate (A = 1.0)
V
SR
—
—
—
13
4.0
25
—
—
—
V/µs
Gain–Bandwidth Product
GBW
MHz
Equivalent Input Noise Voltage
(R = 100 Ω, f = 1000 Hz)
S
e
n
nV/√Hz
Equivalent Input Noise Current (f = 1000 Hz)
i
n
—
0.01
—
pA/√Hz
NOTES: 2. T
low
=
0°C for MC34001/34001B
0°C for MC34002
T
= +70°C for MC34001/34001B
+70°C for MC34002
high
0°C for MC34004/34004B
+70°C for MC34004/34004B
3. The input bias currents approximately double for every 10°C rise in junction temperature, T . Due to limited test time, the input bias currents are
J
correlated to junction temperature. Use of a heatsink is recommended if input bias current is to be kept to a minimum.
4. Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously, in accordance with common practice.
2
MOTOROLA ANALOG IC DEVICE DATA
MC34001, B MC34002, B MC34004, B
ELECTRICAL CHARACTERISTICS (V
CC
= +15 V, V
= –15 V, T = T
to T [Note 2].)
high
EE
A
low
Characteristics
Symbol
Min
Typ
Max
Unit
Input Offset Voltage (R ≤ 10 k)
MC3400XB
MC3400X
V
IO
mV
S
—
—
—
—
7.0
13
Input Offset Current (V
MC3400XB
MC3400X
= 0) (Note 3)
I
nA
nA
CM
IO
—
—
—
—
4.0
4.0
Input Bias Current (V
MC3400XB
= 0) (Note 3)
I
IB
CM
—
—
—
—
8.0
8.0
MC3400X
Common Mode Input Voltage Range
Large Signal (V = ±10 V, R = 2.0 k)
MC3400XB
MC3400X
V
±11
—
—
V
ICR
A
VOL
V/mV
O
L
25
15
—
—
—
—
Output Voltage Swing
(R ≥ 10 k)
(R ≥ 2.0 k)
V
O
V
±12
±10
—
—
—
—
Common Mode Rejection Ratio (R ≤ 10 k)
MC3400XB
MC3400X
CMRR
PSRR
dB
dB
mA
S
80
70
—
—
—
—
Supply Voltage Rejection Ratio (R ≤ 10 k) (Note 4)
S
MC3400XB
MC3400X
80
70
—
—
—
—
Supply Current (Each Amplifier)
MC3400XB
MC3400X
I
D
—
—
—
—
2.8
3.0
NOTES: 2. T
low
=
0°C for MC34001/34001B
0°C for MC34002
T
= +70°C for MC34001/34001B
+70°C for MC34002
high
0°C for MC34004/34004B
+70°C for MC34004/34004B
3. The input bias currents approximately double for every 10°C rise in junction temperature, T . Due to limited test time, the input bias currents are
J
correlated to junction temperature. Use of a heatsink is recommended if input bias current is to be kept to a minimum.
4. Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously, in accordance with common practice.
3
MOTOROLA ANALOG IC DEVICE DATA
MC34001, B MC34002, B MC34004, B
Figure 1. Input Bias Current
versus Temperature
Figure 2. Output Voltage Swing
versus Frequency
35
30
25
20
15
100
10
V
/V = ±15 V
CC EE
V = ±15 V
/V
CC EE
R
T
= 2.0 k
L
= 25°C
A
±10 V
1.0
0.1
±
5.0 V
10
5.0
0
0.01
–75 –50 –25
0
25
50
75
100 125
100
1.0 k
10 k
100 k
1.0 M
10 M
T , AMBIENT TEMPERATURE (
°C)
f, FREQUENCY (Hz)
A
Figure 3. Output Voltage Swing
versus Load Resistance
Figure 4. Output Voltage Swing
versus Supply Voltage
40
30
40
30
R
T
= 2.0 k
= 25°C
L
A
V
T
/V
= 25
=
C
±15 V
CC EE
A
°
20
10
20
10
0
5.0
0
4.0
0
5.0
10
15
20
0.1
0.2
0.4
0.7 1.0
2.0
7.0 10
R , LOAD RESISTANCE (k
Ω)
V
/V
, SUPPLY VOLTAGE (V)
L
CC EE
Figure 5. Output Voltage Swing
versus Temperature
Figure 6. Supply Current per Amplifier
versus Temperature
2.0
1.8
1.6
1.4
V = ±15 V
/V
CC EE
35
30
25
20
15
10
5.0
0
V
/V
=
±
15 V
CC EE
R
= 10 k
L
1.2
1.0
R
= 2.0 k
L
0.8
0.6
0.4
0.2
0
–50
–25
0
25
50
75
C)
100
125
–50
–25
0
25
50
75
C)
100
125
T , AMBIENT TEMPERATURE (
°
T , AMBIENT TEMPERATURE (
°
A
A
4
MOTOROLA ANALOG IC DEVICE DATA
MC34001, B MC34002, B MC34004, B
Figure 7. Large–Signal Voltage Gain and
Phase Shift versus Frequency
Figure 8. Large–Signal Voltage Gain
versus Temperature
1000
V
V
R
/V = ±15 V
CC EE
O
=
±
10 V
= 2.0 k
L
V
R
T
/V = ±15 V
= 2.0 k
= 25°C
CC EE
L
A
6
10
10
10
100
10
5
4
0
°
Gain
3
2
1
10
10
10
45
°
°
90
Phase Shift
135
°
°
1
1.0
180
1.0
10
100 1.0 k
10 k 100 k 1.0 M 1.0 M 10 M
–50
–25
0
25
50
75
100
125
f, FREQUENCY (Hz)
T , AMBIENT TEMPERATURE (
°C)
A
Figure 10. Equivalent Input Noise Voltage
versus Frequency
Figure 9. Normalized Slew Rate
versus Temperature
1.15
1.10
1.05
1.00
0.95
V
/V
= 10
= 100
= 25°C
=
±15 V
60
50
40
30
20
10
0
CC EE
A
V
R
Ω
S
T
A
0.90
0.85
–50
–25
0
25
50
75
C)
100
125
0.01
0.05 0.1
0.5 1.0
5.0 10
50 100
T , AMBIENT TEMPERATURE (
A
°
f, FREQUENCY (kHz)
Figure 11. Total Harmonic Distortion
versus Frequency
1.0
0.5
V
/V
CC EE
= ±15 Vdc
A
= 1.0
V
0.1
V
T
= 6.0 V (RMS)
= 25°C
O
A
0.05
0.01
0.005
0.001
0.1
0.5
1.0
5.0
10
50
100
f, FREQUENCY (kHz)
5
MOTOROLA ANALOG IC DEVICE DATA
MC34001, B MC34002, B MC34004, B
Representative Circuit Schematic
(Each Amplifier)
Bias Circuitry
Common to All
Amplifiers
Output
V
CC
Q2
Q4
Q5
Q1
Q3
Q6
–
Inputs
+
J1
J2
2.0 k
Q17
Q20
Q22
J3
Q15
Q19
Q23
Q24
10 pF
24
Q14
Q10
Q21
Q12
Q13
Q16
Q8
Q25
Q9
Q11
Q7
Q18
1.5 k
Offset
Null
1.5 k
(MC34001 only)
V
EE
Figure 12. Output Current to Voltage Transformation
for a D–to–A Converter
V
CC
Settling time to within 1/2 LSB is approximately 4.0
from the time all bits are switched (C = 68 pF).
µs
R1
R2
MSB A1
A2
V
ref
The value of C may be selected to minimize overshoot
and ringing.
A3
A4
V
= 15 V
Theoretical V
O
CC
D–to–A
V
A1
2
A2
4
A3
8
A4
16
A5
32
A6
64
A7
128 256
A8
A5
A6
ref
1
V
=
(R
)
+
+
+
+
+
+
+
O
O
R1
+
–
A7
V
O
I
o
LSB A8
MC34001
15 pF
V
= –15 V
C
EE
V
EE
R
O
6
MOTOROLA ANALOG IC DEVICE DATA
MC34001, B MC34002, B MC34004, B
Figure 13. Positive Peak Detector
6
8
V
–
CC
1/2
–
V
O
MC34002
+
D1
7
1/2
MC34002
5
2
3
*
+
V
1N914
in
1 µF
4
V
EE
Reset
Reset
Network
or Relay
*Polycarbonate capacitor
D1 = Hi–speed, low–reverse leakage diode
Figure 14. Long Interval RC Timer
Figure 15. Isolating Large Capacitive Loads
R2 5.1 k
+15 V
MC34001
V
O
7
20 pF
V
CC
R1
V1
R3
2
3
–
+
V
R
6
C
I
C
R1 5.1 k
MC34001
O
2
7
R4
R2
–
+
R3 10
6
4
R6
3
+2.0 V
4
C
0.5 µF
R
5.1 k
L
–15 V
L
0
Run
Clear
C*
–2.0 V
V
EE
Overshoot
= 10
10%
*Polycarbonate or
Polystyrene Capacitor
R5
t
µs
s
When driving large C , the V slew rate is determined by C
L
O
L
and I
:
O(max)
V I
O
∆
Time (t) = R4 Cn (V /V –V ), R = R , R = 0.1 R
0.02
0.5
O
C
L
R
R
I
3
4
5
6
=
=
V/µs = 0.04 V/µs (with C shown)
L
If R1 = R2: t = 0.693 R4C
∆
t
Design Example: 100 Second Timer
V
= 10 V
C = l.0
R5 = 2.0 k
µ
F
R3 = R4 = 144 M
R1 = R2 = 1.0 k
R
R6 = 20 k
Figure 16. Wide BW, Low Noise,
Low Drift Amplifier
C2
R2
f
240 kHz
max
V
CC
7
10 V
–10 V
R1
C1
2
8
V
in
6
3
MC34001
4
V
EE
S
r
Power BW: f
=
240 kHz
max
2
π
Vp
Parasitic input capacitance (C1
interacts with feedback elements and creates undesirable high–frequency pole.
To compensate add C2 such that: R2C2 R1C1.
3.0 pF plus any additional layout capacitance)
7
MOTOROLA ANALOG IC DEVICE DATA
MC34001, B MC34002, B MC34004, B
OUTLINE DIMENSIONS
P SUFFIX
PLASTIC PACKAGE
CASE 626–05
ISSUE K
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).
8
5
3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–B–
MILLIMETERS
INCHES
1
4
DIM
A
B
C
D
F
G
H
J
K
L
M
N
MIN
9.40
6.10
3.94
0.38
1.02
MAX
10.16
6.60
4.45
0.51
1.78
MIN
MAX
0.400
0.260
0.175
0.020
0.070
0.370
0.240
0.155
0.015
0.040
F
–A–
NOTE 2
L
2.54 BSC
0.100 BSC
0.76
0.20
2.92
7.62 BSC
–––
1.27
0.30
3.43
0.030
0.008
0.115
0.300 BSC
–––
0.050
0.012
0.135
C
10
1.01
10
0.040
0.76
0.030
J
–T–
SEATING
PLANE
N
M
D
K
G
H
M
M
M
0.13 (0.005)
T
A
B
D SUFFIX
PLASTIC PACKAGE
CASE 751–05
(SO–8)
ISSUE R
NOTES:
D
A
E
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
C
8
1
5
M
M
0.25
B
H
4
h X 45
MILLIMETERS
B
C
e
DIM
A
A1
B
C
D
E
e
H
h
MIN
1.35
0.10
0.35
0.18
4.80
3.80
MAX
1.75
0.25
0.49
0.25
5.00
4.00
A
SEATING
PLANE
L
1.27 BSC
0.10
5.80
0.25
0.40
0
6.20
0.50
1.25
7
A1
B
L
M
S
S
0.25
C
B
A
8
MOTOROLA ANALOG IC DEVICE DATA
MC34001, B MC34002, B MC34004, B
OUTLINE DIMENSIONS
P SUFFIX
PLASTIC PACKAGE
CASE 646–06
ISSUE L
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
4. ROUNDED CORNERS OPTIONAL.
14
1
8
7
B
INCHES
MILLIMETERS
A
F
DIM
A
B
C
D
F
G
H
J
K
L
M
N
MIN
MAX
0.770
0.260
0.185
0.021
0.070
MIN
18.16
6.10
3.69
0.38
1.02
MAX
19.56
6.60
4.69
0.53
1.78
0.715
0.240
0.145
0.015
0.040
L
C
0.100 BSC
2.54 BSC
0.052
0.008
0.115
0.095
0.015
0.135
1.32
0.20
2.92
2.41
0.38
3.43
J
N
0.300 BSC
7.62 BSC
SEATING
K
0
10
0
10
PLANE
0.015
0.039
0.39
1.01
H
G
D
M
9
MOTOROLA ANALOG IC DEVICE DATA
MC34001, B MC34002, B MC34004, B
NOTES
10
MOTOROLA ANALOG IC DEVICE DATA
MC34001, B MC34002, B MC34004, B
NOTES
11
MOTOROLA ANALOG IC DEVICE DATA
MC34001, B MC34002, B MC34004, B
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