MC34164P-5RAG [ONSEMI]
MICROPOWER UNDERVOLTAGE SENSING CIRCUITS; 微功耗欠压检测电路型号: | MC34164P-5RAG |
厂家: | ONSEMI |
描述: | MICROPOWER UNDERVOLTAGE SENSING CIRCUITS |
文件: | 总14页 (文件大小:140K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MC34164, MC33164,
NCV33164
Micropower Undervoltage
Sensing Circuits
The MC34164 series are undervoltage sensing circuits specifically
designed for use as reset controllers in portable microprocessor based
systems where extended battery life is required. These devices offer
the designer an economical solution for low voltage detection with a
single external resistor. The MC34164 series features a bandgap
reference, a comparator with precise thresholds and built−in hysteresis
to prevent erratic reset operation, an open collector reset output
capable of sinking in excess of 6.0 mA, and guaranteed operation
down to 1.0 V input with extremely low standby current. The MC
devices are packaged in 3−pin TO−226AA, micro size TSOP−5, 8−pin
SOIC−8 and Micro8™ surface mount packages. The NCV device is
packaged in SOIC−8.
Applications include direct monitoring of the 3.0 V or 5.0 V
MPU/logic power supply used in appliance, automotive, consumer,
and industrial equipment.
• Temperature Compensated Reference
• Monitors 3.0 V (MC34164−3) or 5.0 V (MC34164−5) Power Supplies
• Precise Comparator Thresholds Guaranteed Over Temperature
• Comparator Hysteresis Prevents Erratic Reset
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8
1
1
2
3
TO−226AA
P SUFFIX
CASE 29
SOIC−8
D SUFFIX
CASE 751
5
8
1
1
TSOP−5
SN SUFFIX
CASE 483
Micro8
DM SUFFIX
CASE 846A
• Reset Output Capable of Sinking in Excess of 6.0 mA
• Internal Clamp Diode for Discharging Delay Capacitor
• Guaranteed Reset Operation With 1.0 V Input
PIN CONNECTIONS
• Extremely Low Standby Current: As Low as 9.0 ꢀ A
1
2
3
4
8
7
6
5
Reset
Input
N.C.
N.C.
N.C.
N.C.
• Economical TO−226AA, TSOP−5, SOIC−8 and Micro8 Surface
Mount Packages
N.C.
• NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
Ground
(Top View)
• Pb−Free Packages are Available
Input
TSOP−5
TO−226AA
Pin 1. Ground
2. Input
Pin 1. Reset
2. Input
3. Ground
Reset
3. Reset
4. NC
5. NC
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
1.2 V
Sink Only
Positive True Logic
ref
=
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 9 of this data sheet.
GND
Figure 1. Representative Block Diagram
This device contains 28 active transistors.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
August, 2005 − Rev. 16
MC34164/D
MC34164, MC33164, NCV33164
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Power Input Supply Voltage
Reset Output Voltage
V
−1.0 to 12
−1.0 to 12
in
O
V
V
Reset Output Sink Current
I
Internally
Limited
mA
Sink
Clamp Diode Forward Current, Reset to Input Pin (Note 1)
IF
100
mA
Power Dissipation and Thermal Characteristics
P Suffix, Plastic Package
P
700
178
mW
°C/W
D
Maximum Power Dissipation @ T = 25°C
A
R
ꢁ
Thermal Resistance, Junction−to−Air
D Suffix, Plastic Package
JA
700
178
mW
°C/W
Maximum Power Dissipation @ T = 25°C
P
A
D
Thermal Resistance, Junction−to−Air
DM Suffix, Plastic Package
R
ꢁ
JA
520
240
mW
°C/W
P
Maximum Power Dissipation @ T = 25°C
D
A
Thermal Resistance, Junction−to−Air
R
ꢁ
JA
Operating Junction Temperature
T
+150
°C
°C
J
Operating Ambient Temperature Range
MC34164 Series
T
A
0 to +70
MC33164 Series, NCV33164
− 40 to +125
Storage Temperature Range
T
stg
− 65 to +150
°C
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
ESD
V
4000
200
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
MC34164−3, MC33164−3 SERIES, NCV33164−3
ELECTRICAL CHARACTERISTICS (For typical values T = 25°C, for min/max values T is the operating ambient temperature
A
A
range that applies [Notes 2 & 3], unless otherwise noted.)
Characteristic
COMPARATOR
Symbol
Min
Typ
Max
Unit
Threshold Voltage
High State Output (V Increasing)
Low State Output (V Decreasing)
V
V
2.55
2.55
0.03
2.71
2.65
0.06
2.80
2.80
−
IH
in
V
in
IL
Hysteresis (I
= 100 ꢀ A)
Sink
V
H
RESET OUTPUT
Output Sink Saturation
V
V
OL
−
−
0.14
0.1
0.4
0.3
(V = 2.4 V, I
= 1.0 mA)
in
Sink
Sink
(V = 1.0 V, I
in
= 0.25 mA)
Output Sink Current (V , Reset = 2.4 V)
I
6.0
12
30
mA
in
Sink
I
Output Off−State Leakage
R(leak)
ꢀ
A
−
−
0.02
0.02
0.5
1.0
(V , Reset = 3.0 V)
(V , Reset = 10 V)
in
in
Clamp Diode Forward Voltage, Reset to Input Pin (I = 5.0 mA)
V
0.6
0.9
1.2
V
F
F
TOTAL DEVICE
Operating Input Voltage Range
V
in
1.0 to 10
−
−
V
Quiescent Input Current
I
ꢀ A
in
−
−
9.0
24
15
40
V
in
V
in
= 3.0 V
= 6.0 V
1. Maximum package power dissipation limits must be observed.
2. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
3. T
=
=
0°C for MC34164
− 40°C for MC33164, NCV33164
T
= +70°C for MC34164
= +125°C for MC33164, NCV33164
low
high
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MC34164, MC33164, NCV33164
MC34164−5, MC33164−5 SERIES, NCV33164−5
ELECTRICAL CHARACTERISTICS (For typical values T = 25°C, for min/max values T is the operating ambient temperature
A
A
range that applies [Notes 5 & 6], unless otherwise noted.)
Characteristic
COMPARATOR
Symbol
Min
Typ
Max
Unit
Threshold Voltage
High State Output (V Increasing)
Low State Output (V Decreasing)
V
V
4.15
4.15
0.02
4.33
4.27
0.09
4.45
4.45
−
IH
in
V
in
IL
Hysteresis (I
= 100 ꢀ A)
Sink
V
H
RESET OUTPUT
Output Sink Saturation
V
V
OL
−
−
0.14
0.1
0.4
0.3
(V = 4.0 V, I
= 1.0 mA)
in
Sink
Sink
(V = 1.0 V, I
in
= 0.25 mA)
Output Sink Current (V , Reset = 4.0 V)
I
7.0
20
50
mA
in
Sink
I
Output Off−State Leakage
R(leak)
ꢀ
A
−
−
0.02
0.02
0.5
2.0
(V , Reset = 5.0 V)
(V , Reset = 10 V)
in
in
Clamp Diode Forward Voltage, Reset to Input Pin (I = 5.0 mA)
V
0.6
0.9
1.2
V
F
F
TOTAL DEVICE
Operating Input Voltage Range
Quiescent Input Current
V
1.0 to 10
−
−
V
in
I
ꢀ A
in
−
−
12
32
20
50
V
in
V
in
= 5.0 V
= 10 V
4. Maximum package power dissipation limits must be observed.
5. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
6. T
= 0°C for MC34164
T
= +70°C for MC34164
low
high
= − 40°C for MC33164, NCV33164
= +125°C for MC33164, NCV33164
7. NCV prefix is for automotive and other applications requiring site and change control.
10
10
R = 82 k to V
L
R = 82 k to V
L in
in
8.0
6.0
8.0
6.0
T
= 25°C
T
= 25°C
A
A
4.0
2.0
0
4.0
2.0
0
0
2.0
4.0
6.0
8.0
10
0
2.0
4.0
6.0
8.0
10
V , INPUT VOLTAGE (V)
in
V , INPUT VOLTAGE (V)
in
Figure 2. MC3X164−3 Reset Output
Voltage versus Input Voltage
Figure 3. MC3X164−5 Reset Output
Voltage versus Input Voltage
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MC34164, MC33164, NCV33164
5.0
4.0
5.0
4.0
3.0
2.0
1.0
3.0
2.0
1.0
R = 82 k to V
L
R = 82 k to V
L
in
in
T
A
= 25°C
T
A
= 25°C
0
2.62
0
4.22
2.66
2.70
2.74
2.78
4.26
4.30
4.34
4.38
V , INPUT VOLTAGE (V)
in
V , INPUT VOLTAGE (V)
in
Figure 4. MC3X164−3 Reset Output
Voltage versus Input Voltage
Figure 5. MC3X164−5 Reset Output
Voltage versus Input Voltage
2.76
2.72
2.68
2.64
2.60
4.36
4.32
4.28
4.24
4.20
Upper Threshold
High State Output
Upper Threshold
High State Output
Lower Threshold
Low State Output
Lower Threshold
Low State Output
−ꢀ50 −ꢀ25
0
25
50
75
100
125
−ꢀ50 −ꢀ25
0
25
50
75
100
125
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 6. MC3X164−3 Comparator Threshold
Voltage versus Temperature
Figure 7. MC3X164−5 Comparator Threshold
Voltage versus Temperature
50
40
30
50
40
30
T
A
= 25°C
T
A
= 25°C
T
A
= 0°C
20
10
0
20
10
0
T
A
= 0°C
T
= 70°C
A
T
A
= 70°C
0
2.0
4.0
6.0
8.0
10
0
2.0
4.0
6.0
8.0
10
V , INPUT VOLTAGE (V)
in
V , INPUT VOLTAGE (V)
in
Figure 8. MC3X164−3 Input Current
versus Input Voltage
Figure 9. MC3X164−5 Input Current
versus Input Voltage
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MC34164, MC33164, NCV33164
4.0
4.0
T
A
= 25°C
V
in
= 2.4 V
V , Reset = 4 V
in
T
A
= 70°C
T
A
= 0°C
3.0
2.0
3.0
2.0
T
A
= 70°C
T
A
= 25°C
T
= 25°C
T
= 0°C
A
A
T
= 25°C
= 0°C
A
T
A
T = 0°C
A
1.0
0
1.0
0
T
A
= 70°C
T = 70°C
A
0
4.0
8.0
12
16
20
0
4.0
8.0
12
16
20
V
, SINK CURRENT (mA)
Sink
I , SINK CURRENT (mA)
Sink
Figure 10. MC3X164−3 Reset Output
Saturation versus Sink Current
Figure 11. MC3X164−5 Reset Output
Saturation versus Sink Current
32
24
16
8.0
0
V
= 5.0 V to 4.0 V
in
R = 43 k
Reset
L
V
T
= 0 V
= 25°C
T
A
= 25°C
in
90%
A
V
in
5.0 V
4.0 V
V
in
43k
5.0V
4.0V
Reset
10
%
Ref
0
0.4
0.8
V , FORWARD VOLTAGE (V)
1.2
1.6
5.0 ꢀ s/DIV
F
Figure 12. Clamp Diode Forward Current
versus Voltage
Figure 13. Reset Delay Time
(MC3X164−5 Shown)
R
Input
Power
Supply
Reset
Microprocessor
Circuit
Reset
C
DLY
1
1.2 V
ref
t
= R
In
V
ǒ Ǔ
th(MPU)
DLY
CDLY
1 −
GND
V
in
A time delayed reset can be accomplished with the addition of C . For systems with extremely fast power
is
DLY
supply rise times (<ꢀ500 ns) it is recommended that the RCDLY time constant be greater than 5.0 ꢀ s. V
the microprocessor reset input threshold.
th(MPU)
Figure 14. Low Voltage Microprocessor Reset
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MC34164, MC33164, NCV33164
Test Data
ꢂ V
R
H
V
(mV)
R
R
L
(kꢃ)
H
th
H
I
in
V
in
(mV)
(ꢃ)
R
L
Power
Supply
Microprocessor
Circuit
60
0
0
43
10
6.8
4.3
10
6.8
4.3
10
8.2
6.8
5.6
4.3
Reset
103
123
160
155
199
280
262
306
357
421
530
1.0
1.0
1.0
2.2
2.2
2.2
4.7
4.7
4.7
4.7
4.7
100
100
100
220
220
220
470
470
470
470
470
4.3 R
H
1.2 V
ref
V ≈
+ 0.06
H
R
L
−ꢀ6
MC3X164−5
GND
ꢂ V
≈ 10 R x 10ꢀ
H
th(lower)
where: R ≤ 1.0 k
ꢃ
H
43 kꢃ ≥ R ≥ 4.3 k
ꢃ
L
Comparator hysteresis can be increased with the addition of resistor R . The hysteresis equation has been simplified and does not account for the change of input current
will be observed due to I which is typically 10 ꢀ A at 4.3 V. The
th(lower) in
H
as V crosses the comparator threshold (Figure 8). An increase of the lower threshold ꢂ V
I
in
in
equations are accurate to 10% with R less than 1.0 kꢃ and R between 4.3 kꢃ and 43 kꢃ.
H
L
Figure 15. Low Voltage Microprocessor Reset With Additional Hysteresis
(MC3X164−5 Shown)
Input
1.0 k
Input
Power
Supply
Reset
Reset
Solar
Cells
1.2 V
ref
1.2 V
ref
GND
GND
Figure 16. Voltage Monitor
Figure 17. Solar Powered Battery Charger
V
CC
R
L
MTP3055EL
270
4.3V
Input
Reset
Overheating of the logic level power MOSFET due to insufficient
gate voltage can be prevented with the above circuit. When the
input signal is below the 4.3 V threshold of the MC3X164−5, its
2
output grounds the gate of the L MOSFET.
1.2 V
ref
GND MC3X164−5
Figure 18. MOSFET Low Voltage Gate Drive Protection Using the MC3X164−5
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MC34164, MC33164, NCV33164
ORDERING INFORMATION
Device
†
Package
Shipping
MC33164D−3
SOIC−8
98 Units / Rail
MC33164D−3G
SOIC−8
(Pb−Free)
MC33164D−3R2
SOIC−8
MC33164D−3R2G
SOIC−8
(Pb−Free)
2500 Units / Tape & Reel
NCV33164D−3R2*
NCV33164D−3R2G*
SOIC−8
SOIC−8
(Pb−Free)
MC33164DM−3R2
MC33164DM−3R2G
Micro8
4000 Units / Tape & Reel
2000 Units / Box
Micro8
(Pb−Free)
MC33164P−3
TO−92
MC33164P−3G
TO−92
(Pb−Free)
MC33164P−3RA
TO−92
2000 Units / Tape & Reel
2000 Units / Pack
MC33164P−3RAG
TO−92
(Pb−Free)
MC33164P−3RP
TO−92
MC33164P−3RPG
TO−92
(Pb−Free)
MC33164D−5
SOIC−8
98 Units / Rail
MC33164D−5G
SOIC−8
(Pb−Free)
MC33164D−5R2
SOIC−8
MC33164D−5R2G
SOIC−8
(Pb−Free)
2500 Units / Tape & Reel
NCV33164D−5R2*
NCV33164D−5R2G*
SOIC−8
SOIC−8
(Pb−Free)
MC33164DM−5R2
MC33164DM−5R2G
Micro8
4000 Units / Tape & Reel
2000 Units / Box
Micro8
(Pb−Free)
MC33164P−5
TO−92
MC33164P−5G
TO−92
(Pb−Free)
MC33164P−5RA
TO−92
2000 Units / Tape & Reel
2000 Units / Pack
MC33164P−5RAG
TO−92
(Pb−Free)
MC33164P−5RP
TO−92
MC33164P−5RPG
TO−92
(Pb−Free)
MC34164D−3
SOIC−8
98 Units / Rail
MC34164D−3G
SOIC−8
(Pb−Free)
MC34164D−3R2
SOIC−8
2500 Units / Tape & Reel
MC34164D−3R2G
SOIC−8
(Pb−Free)
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MC34164, MC33164, NCV33164
ORDERING INFORMATION
Device
†
Package
Shipping
MC34164DM−3R2
MC34164DM−3R2G
Micro8
4000 Units / Tape & Reel
Micro8
(Pb−Free)
MC34164P−3
TO−92
2000 Units / Box
2000 Units / Box
2000 Units / Pack
2000 Units / Pack
MC34164P−3G
TO−92
(Pb−Free)
MC34164P−3RP
TO−92
MC34164P−3RPG
TO−92
(Pb−Free)
MC34164D−5
SOIC−8
98 Units / Rail
MC34164D−5G
SOIC−8
(Pb−Free)
MC34164D−5R2
SOIC−8
2500 Units / Tape & Reel
2500 Units / Tape & Reel
4000 Units / Tape & Reel
4000 Units / Tape & Reel
MC34164D−5R2G
SOIC−8
(Pb−Free)
MC34164DM−5R2
MC34164DM−5R2G
Micro8
Micro8
(Pb−Free)
MC34164SN−5T1
MC34164SN−5T1G
TSOP−5
3000 Units / Tape & Reel
TSOP−5
(Pb−Free)
MC34164P−5
TO−92
2000 Units / Box
2000 Units / Box
MC34164P−5G
TO−92
(Pb−Free)
MC34164P−5RA
TO−92
2000 Units / Tape & Reel
MC34164P−5RAG
TO−92
(Pb−Free)
MC34164P−5RP
TO−92
2000 Units / Pack
2000 Units / Pack
MC34164P−5RPG
TO−92
(Pb−Free)
*NCV33164: T = −40°C, T
= +125°C. Guaranteed by design. NCV prefix is for automotive and other applications requiring
high
low
site and change control.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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8
MC34164, MC33164, NCV33164
PIN CONNECTIONS AND MARKING DIAGRAMS
TO−92
MC3x164P−yRA
MC3x164P−yRP
MC3x164P−y
CASE 29
TSOP−5
SN SUFFIX
CASE 483
SOIC−8
D SUFFIX
CASE 751
Micro8
MC33164DM
CASE 846A
Micro8
MC34164DM
CASE 846A
8
8
5
4
MC3x1
64P−y
YWW
8
1
MIy0
YWW
AWL
MCy0
YWW
AWL
3x164
ALYWy
G
SRCYWG
1
2 3
1
1
1 2 3
SRC
= Device Code
x
y
A
= Device Number 3 or 4
= Suffix Number 3 or 5
= Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G
= Pb−Free
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MC34164, MC33164, NCV33164
PACKAGE DIMENSIONS
TO−226AA
P SUFFIX
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.205
0.210
0.165
0.021 0.407
D
0.055
0.105
0.020
−−− 12.70
−−−
0.105
1.15
2.42
0.39
X X
G
J
H
V
K
L
6.35
2.04
−−−
2.93
3.43
−−−
C
N
P
R
V
2.66
2.54
−−−
−−− 0.100
SECTION X−X
0.115
0.135
−−−
−−−
1
N
−−−
N
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MC34164, MC33164, NCV33164
PACKAGE DIMENSIONS
TSOP−5
SN SUFFIX
PLASTIC PACKAGE
CASE 483−02
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
D
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
5
4
3
B
S
1
2
4. A AND B DIMENSIONS DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
L
G
A
MILLIMETERS
INCHES
MIN MAX
0.1142 0.1220
DIM
A
B
C
D
G
H
J
K
L
MIN
2.90
1.30
0.90
0.25
0.85
0.013
0.10
0.20
1.25
0
MAX
3.10
1.70 0.0512 0.0669
1.10 0.0354 0.0433
0.50 0.0098 0.0197
1.05 0.0335 0.0413
0.100 0.0005 0.0040
0.26 0.0040 0.0102
0.60 0.0079 0.0236
1.55 0.0493 0.0610
J
C
0.05 (0.002)
M
K
H
M
S
10
0
10
_
_
_
_
2.50
3.00 0.0985 0.1181
SOLDERING FOOTPRINT*
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
11
MC34164, MC33164, NCV33164
PACKAGE DIMENSIONS
SOIC−8
D SUFFIX
CASE 751−07
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
−X−
A
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
8
5
4
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
S
M
M
B
0.25 (0.010)
Y
1
K
−Y−
G
MILLIMETERS
DIM MIN MAX
INCHES
MIN
MAX
0.197
0.157
0.069
0.020
A
B
C
D
G
H
J
K
M
N
S
4.80
3.80
1.35
0.33
5.00 0.189
4.00 0.150
1.75 0.053
0.51 0.013
C
N X 45
_
SEATING
PLANE
−Z−
1.27 BSC
0.050 BSC
0.10 (0.004)
0.10
0.19
0.40
0
0.25 0.004
0.25 0.007
1.27 0.016
0.010
0.010
0.050
8
0.020
0.244
M
J
H
D
8
0
_
_
_
_
0.25
5.80
0.50 0.010
6.20 0.228
M
S
S
X
0.25 (0.010)
Z
Y
SOLDERING FOOTPRINT*
1.52
0.060
7.0
4.0
0.275
0.155
0.6
0.024
1.270
0.050
mm
inches
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
12
MC34164, MC33164, NCV33164
PACKAGE DIMENSIONS
Micro8
DM SUFFIX
CASE 846A−02
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
−A−
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
−B−
K
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. 846A−01 OBSOLETE, NEW STANDARD 846A−02.
PIN 1 ID
G
MILLIMETERS
INCHES
D 8 PL
DIM MIN
MAX
3.10
3.10
1.10
0.40
MIN
MAX
0.122
0.122
M
S
S
0.08 (0.003)
T
B
A
A
B
C
D
G
H
J
2.90
2.90
−−−
0.25
0.114
0.114
−−− 0.043
0.010 0.016
0.026 BSC
0.002
0.005
0.187
0.016
0.65 BSC
SEATING
PLANE
0.05
0.13
4.75
0.40
0.15
0.23
5.05
0.70
0.006
0.009
0.199
0.028
−T−
C
0.038 (0.0015)
K
L
L
J
H
SOLDERING FOOTPRINT*
1.04
8X 0.041
0.38
8X
0.015
3.20
4.24
5.28
0.126
0.167 0.208
0.65
6X0.0256
SCALE 8:1
mm
inches
ǒ
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
13
MC34164, MC33164, NCV33164
Micro8 is a trademark of International Rectifier.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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MC34164/D
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