MC74HC1GU04DBVT1G [ONSEMI]

单无缓冲逆变器;
MC74HC1GU04DBVT1G
型号: MC74HC1GU04DBVT1G
厂家: ONSEMI    ONSEMI
描述:

单无缓冲逆变器

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MC74HC1GU04  
Single Unbuffered Inverter  
The MC74HC1GU04 is a high speed CMOS unbuffered inverter  
fabricated with silicon gate CMOS technology.  
The MC74HC1GU04 output drive current is 1/2 compared to  
MC74HC series.  
High Speed: t = 7 ns (Typ) at V = 5 V  
PD  
CC  
Low Power Dissipation: I = 1 mA (Max) at T = 25_C  
CC  
A
http://onsemi.com  
High Noise Immunity  
MARKING  
DIAGRAMS  
Balanced Propagation Delays (t  
Symmetrical Output Impedance (I = I = 2 mA)  
= t  
)
pLH  
pHL  
OH  
OL  
5
Chip Complexity: FET = 105  
Pb−Free Packages are Available  
1
H6d  
SC70−5/SC−88A/SOT−353  
DF SUFFIX  
CASE 419A  
Pin 1  
5
4
V
CC  
NC  
IN A  
GND  
1
2
3
5
H6M  
1
SOT23−5/TSOP−5/SC59−5  
DT SUFFIX  
Pin 1  
CASE 483  
OUT Y  
d
= Date Code  
M = Month Code  
Figure 1. Pinout  
PIN ASSIGNMENT  
1
2
3
4
5
NC  
IN A  
GND  
1
IN A  
OUT Y  
Figure 2. Logic Symbol  
OUT Y  
V
CC  
FUNCTION TABLE  
Input A  
Output Y  
L
H
L
H
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
January, 2005 − Rev. 8  
MC74HC1GU04/D  
MC74HC1GU04  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
V
V
DC Supply Voltage  
*0.5 to )7.0  
CC  
IN  
DC Input Voltage  
*0.5 to V )0.5  
V
CC  
DC Output Voltage  
*0.5 to V )0.5  
V
OUT  
CC  
I
I
I
I
DC Input Diode Current  
DC Output Diode Current  
DC Output Sink Current  
DC Supply Current per Supply Pin  
Storage Temperature Range  
$20  
$20  
mA  
mA  
mA  
mA  
_C  
IK  
OK  
$12.5  
$25  
OUT  
CC  
T
T
T
q
*65 to )150  
260  
STG  
Lead Temperature, 1 mm from Case for 10 Seconds  
Junction Temperature Under Bias  
_C  
L
J
)150  
_C  
Thermal Resistance  
SC70−5/SC−88A/SOT−353 (Note 1)  
350  
230  
_C/W  
JA  
SOT23−5/TSOP−5/SC59−5  
P
D
Power Dissipation in Still Air at 85_C  
SC70−5/SC−88A/SOT−353  
SOT23−5/TSOP−5/SC59−5  
150  
200  
mW  
MSL  
Moisture Sensitivity  
Flammability Rating  
ESD Withstand Voltage  
Level 1  
F
R
Oxygen Index: 28 to 34  
UL 94 V−0 @ 0.125 in  
V
ESD  
Human Body Model (Note 2)  
Machine Model (Note 3)  
Charged Device Model (Note 4)  
u2000  
u200  
N/A  
V
I
Latchup Performance  
Above V and Below GND at 125_C (Note 5)  
$500  
mA  
LATCHUP  
CC  
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit  
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,  
damage may occur and reliability may be affected.  
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace with no air flow.  
2. Tested to EIA/JESD22−A114−A.  
3. Tested to EIA/JESD22−A115−A.  
4. Tested to JESD22−C101−A.  
5. Tested to EIA/JESD78.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
2.0  
Max  
Unit  
V
V
DC Supply Voltage  
6.0  
CC  
IN  
V
V
T
DC Input Voltage  
0.0  
V
CC  
V
CC  
V
DC Output Voltage  
0.0  
V
OUT  
Operating Temperature Range  
Input Rise and Fall Time  
*55  
)125  
_C  
ns  
A
t , t  
V
CC  
V
CC  
V
CC  
V
CC  
= 2.0 V  
= 3.0 V  
= 4.5 V  
= 6.0 V  
0
0
0
0
1000  
600  
500  
400  
r
f
DEVICE JUNCTION TEMPERATURE VERSUS  
TIME TO 0.1% BOND FAILURES  
FAILURE RATE OF PLASTIC = CERAMIC  
UNTIL INTERMETALLICS OCCUR  
Junction  
Temperature °C  
Time, Hours  
1,032,200  
419,300  
178,700  
79,600  
Time, Years  
80  
117.8  
47.9  
20.4  
9.4  
90  
1
100  
110  
120  
130  
140  
1
10  
100  
1000  
37,000  
4.2  
TIME, YEARS  
17,800  
2.0  
Figure 3. Failure Rate vs. Time Junction Temperature  
8,900  
1.0  
http://onsemi.com  
2
 
MC74HC1GU04  
DC ELECTRICAL CHARACTERISTICS  
V
CC  
T = 25_C  
A
T
A
v 85_C  
*55_C v T v 125_C  
A
Symbol  
Parameter  
Test Conditions  
(V)  
Min  
Typ  
Max  
Min  
Max  
Min  
Max  
Unit  
V
V
V
Minimum High−Level  
Input Voltage  
2.0  
3.0  
4.5  
6.0  
1.7  
1.7  
1.7  
V
IH  
2.45  
3.60  
4.80  
2.45  
3.60  
4.80  
2.45  
3.60  
4.80  
Maximum Low−Level  
Input Voltage  
2.0  
3.0  
4.5  
6.0  
0.3  
0.5  
0.9  
0.3  
0.5  
0.9  
0.3  
0.5  
0.9  
V
V
IL  
1.20  
1.20  
1.20  
Minimum High−Level  
Output Voltage  
V
= V or V  
= −20 mA  
2.0  
3.0  
4.5  
6.0  
1.8  
2.7  
4.0  
5.5  
2.0  
3.0  
4.5  
5.9  
1.8  
2.7  
4.0  
5.5  
1.8  
2.7  
4.0  
5.5  
OH  
IN  
IH  
IL  
I
OH  
V
IN  
= V or V  
IH IL  
V
= V or V  
= −2 mA  
= −2.6 mA  
IN  
IH  
IL  
I
4.5  
6.0  
4.18  
5.68  
4.33  
5.76  
4.13  
5.63  
4.08  
5.58  
OH  
I
OH  
V
OL  
Maximum Low−Level  
Output Voltage  
V
= V or V  
= 20 mA  
2.0  
3.0  
4.5  
6.0  
0.0  
0.0  
0.0  
0.0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
IN  
IH  
IL  
I
OL  
V
IN  
= V or V  
IH IL  
V
= V or V  
= 2 mA  
= 2.6 mA  
IN  
IH  
IL  
I
OL  
4.5  
6.0  
0.26  
0.26  
0.33  
0.33  
0.40  
0.40  
I
OL  
I
I
Maximum Input  
Leakage Current  
V
= 6.0 V or GND 6.0  
$0.1  
$1.0  
$1.0  
mA  
mA  
IN  
IN  
Maximum Quiescent  
Supply Current  
V
IN  
= V or GND  
6.0  
1.0  
10  
40  
CC  
CC  
AC ELECTRICAL CHARACTERISTICS (Input t = t = 6.0 ns)  
r
f
T
A
= 25_C  
Typ  
3
T
v 85_C  
*55_C v T v 125_C  
A
A
Symbol  
Parameter  
Maximum  
Propagation Delay,  
Input A or B to Y  
Test Conditions  
Min  
Max  
Min  
Max  
Min  
Max  
Unit  
t
t
,
V
= 5.0 V  
C = 15 pF  
L
15  
20  
25  
ns  
PLH  
PHL  
CC  
V
CC  
V
CC  
V
CC  
V
CC  
= 2.0 V  
= 3.0 V  
= 4.5 V  
= 6.0 V  
C = 50 pF  
L
17  
9
7
100  
27  
20  
125  
35  
25  
155  
90  
35  
6.5  
17  
21  
26  
t
t
,
Output Transition  
Time  
V
= 5.0 V  
C = 15 pF  
4
10  
15  
20  
ns  
TLH  
THL  
CC  
L
V
CC  
V
CC  
V
CC  
V
CC  
= 2.0 V  
= 3.0 V  
= 4.5 V  
= 6.0 V  
C = 50 pF  
L
25  
16  
12  
10  
125  
35  
25  
155  
45  
31  
200  
60  
38  
21  
26  
32  
C
C
Maximum Input  
Capacitance  
5
10  
10  
10  
pF  
pF  
IN  
Typical @ 25_C, V = 5.0 V  
CC  
Power Dissipation Capacitance (Note 6)  
10  
PD  
6. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.  
PD  
Average operating current can be obtained by the equation: I  
power consumption; P = C V  
) = C V f + I . C is used to determine the no−load dynamic  
CC(OPR  
PD CC in CC PD  
2
f + I V  
.
D
PD  
CC  
in  
CC  
CC  
http://onsemi.com  
3
 
MC74HC1GU04  
t
r
t
f
V
CC  
90%  
50%  
10%  
INPUT  
OUTPUT  
INPUT A  
GND  
C
L*  
t
t
PLH  
PHL  
OUTPUT Y  
90%  
50%  
10%  
t
t
TLH  
THL  
*Includes all probe and jig capacitance.  
A 1−MHz square input wave is recommended for  
propagation delay tests.  
Figure 4. Switching Waveforms  
Figure 5. Test Circuit  
DEVICE ORDERING INFORMATION  
Device Nomenclature  
Device  
Logic  
Circuit  
Indicator Identifier  
Temp  
Range  
Tape and  
Reel  
Suffix  
Device Order  
Number  
Package  
Suffix  
Package  
Type  
Tape and  
Reel Size  
Function  
Technology  
MC74HC1GU04DFT1  
MC  
74  
HC1G  
U04  
DF  
T1  
SC70−5/SC−88A/  
SOT−353  
178 mm (7 in)  
3000 Unit  
MC74HC1GU04DFT1G  
MC  
74  
HC1G  
U04  
DF  
T1  
SC70−5/SC−88A/  
SOT−353  
178 mm (7 in)  
3000 Unit  
(Pb−Free)  
MC74HC1GU04DFT2  
MC74HC1GU04DFT2G  
MC  
MC  
74  
74  
HC1G  
HC1G  
U04  
U04  
DF  
DF  
T2  
T2  
SC70−5/SC−88A/  
SOT−353  
178 mm (7 in)  
3000 Unit  
SC70−5/SC−88A/  
SOT−353  
178 mm (7 in)  
3000 Unit  
(Pb−Free)  
MC74HC1GU04DTT1  
MC74HC1GU04DTT1G  
MC  
MC  
74  
74  
HC1G  
HC1G  
U04  
U04  
DT  
DT  
T1  
T1  
SOT23−5/TSOP−5/ 178 mm (7 in)  
SC59−5 3000 Unit  
SOT23−5/TSOP−5/ 178 mm (7 in)  
SC59−5  
3000 Unit  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
4
MC74HC1GU04  
PACKAGE DIMENSIONS  
SC70−5/SC−88A/SOT−353  
DF SUFFIX  
5−LEAD PACKAGE  
CASE 419A−02  
ISSUE G  
NOTES:  
1. DIMENSIONING AND TOLERANCING  
PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. 419A−01 OBSOLETE. NEW STANDARD  
419A−02.  
4. DIMENSIONS A AND B DO NOT INCLUDE  
MOLD FLASH, PROTRUSIONS, OR GATE  
BURRS.  
A
G
INCHES  
DIM MIN MAX  
MILLIMETERS  
5
4
3
MIN  
1.80  
1.15  
0.80  
0.10  
MAX  
2.20  
1.35  
1.10  
0.30  
A
B
C
D
G
H
J
0.071  
0.045  
0.031  
0.004  
0.087  
0.053  
0.043  
0.012  
−B−  
S
1
2
0.026 BSC  
0.65 BSC  
−−−  
0.004  
0.004  
0.004  
0.010  
0.012  
−−−  
0.10  
0.10  
0.10  
0.25  
0.30  
K
N
S
M
M
B
0.2 (0.008)  
D 5 PL  
0.008 REF  
0.20 REF  
0.079  
0.087  
2.00  
2.20  
N
J
C
K
H
SOLDERING FOOTPRINT*  
0.50  
0.0197  
0.65  
0.025  
0.65  
0.025  
0.40  
0.0157  
1.9  
0.0748  
mm  
inches  
ǒ
Ǔ
SCALE 20:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
5
MC74HC1GU04  
PACKAGE DIMENSIONS  
SOT23−5/TSOP−5/SC59−5  
DT SUFFIX  
5−LEAD PACKAGE  
CASE 483−02  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
ISSUE C  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. MAXIMUM LEAD THICKNESS INCLUDES  
LEAD FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS  
OF BASE MATERIAL.  
4. A AND B DIMENSIONS DO NOT INCLUDE  
MOLD FLASH, PROTRUSIONS, OR GATE  
BURRS.  
D
5
4
3
B
C
S
1
2
L
MILLIMETERS  
INCHES  
MIN MAX  
G
DIM  
A
B
C
D
G
H
J
K
L
MIN  
2.90  
1.30  
0.90  
0.25  
0.85  
0.013  
0.10  
0.20  
1.25  
0
MAX  
3.10  
1.70  
1.10  
0.50  
1.05  
0.100  
0.26  
0.60  
1.55  
0.1142 0.1220  
0.0512 0.0669  
0.0354 0.0433  
0.0098 0.0197  
0.0335 0.0413  
0.0005 0.0040  
0.0040 0.0102  
0.0079 0.0236  
0.0493 0.0610  
A
J
0.05 (0.002)  
H
M
K
M
S
10  
0
10  
_
_
_
_
2.50  
3.00  
0.0985 0.1181  
SOLDERING FOOTPRINT*  
1.9  
0.074  
0.95  
0.037  
2.4  
0.094  
1.0  
0.039  
0.7  
0.028  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
MC74HC1GU04/D  

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