MC74HC595AFELG [ONSEMI]

8-Bit Serial-Input/Serial or Parallel-Output Shift Register with Latched 3-State Outputs High−Performance Silicon−Gate CMOS; 8位串行输入/串行或并行输出移位锁存具有三态输出的高性能硅栅CMOS注册
MC74HC595AFELG
型号: MC74HC595AFELG
厂家: ONSEMI    ONSEMI
描述:

8-Bit Serial-Input/Serial or Parallel-Output Shift Register with Latched 3-State Outputs High−Performance Silicon−Gate CMOS
8位串行输入/串行或并行输出移位锁存具有三态输出的高性能硅栅CMOS注册

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MC74HC595A  
8−Bit Serial−Input/Serial or  
Parallel−Output Shift  
Register with Latched  
3−State Outputs  
http://onsemi.com  
MARKING  
High−Performance Silicon−Gate CMOS  
The MC74HC595A consists of an 8−bit shift register and an 8−bit  
D−type latch with three−state parallel outputs. The shift register  
accepts serial data and provides a serial output. The shift register also  
provides parallel data to the 8−bit latch. The shift register and latch  
have independent clock inputs. This device also has an asynchronous  
reset for the shift register.  
DIAGRAMS  
16  
PDIP−16  
N SUFFIX  
CASE 648  
MC74HC595AN  
AWLYYWW  
16  
1
1
The HC595A directly interfaces with the SPI serial data port on  
CMOS MPUs and MCUs.  
16  
Features  
SOIC−16  
D SUFFIX  
CASE 751B  
HC595A  
AWLYWW  
16  
Output Drive Capability: 15 LSTTL Loads  
Outputs Directly Interface to CMOS, NMOS, and TTL  
Operating Voltage Range: 2.0 to 6.0 V  
1
1
Low Input Current: 1.0 mA  
High Noise Immunity Characteristic of CMOS Devices  
In Compliance with the Requirements Defined by JEDEC  
Standard No. 7A  
16  
TSSOP−16  
DT SUFFIX  
CASE 948F  
HC  
595A  
ALYW  
16  
1
Chip Complexity: 328 FETs or 82 Equivalent Gates  
Improvements over HC595  
1
Improved Propagation Delays  
50% Lower Quiescent Power  
Improved Input Noise and Latchup Immunity  
A
L, WL  
Y, YY  
= Assembly Location  
= Wafer Lot  
= Year  
Pb−Free Packages are Available*  
W, WW = Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
April, 2005 − Rev. 9  
MC74HC595A/D  
MC74HC595A  
LOGIC DIAGRAM  
SERIAL  
14  
15  
1
DATA  
INPUT  
A
Q
Q
A
B
PIN ASSIGNMENT  
2
3
4
5
6
7
Q
Q
Q
Q
Q
Q
C
D
E
Q
Q
1
2
3
4
5
6
7
8
16  
15  
14  
V
CC  
B
PARALLEL  
DATA  
OUTPUTS  
Q
A
C
D
A
SHIFT  
REGISTER  
LATCH  
Q
F
Q
13 OUTPUT ENABLE  
12 LATCH CLOCK  
11 SHIFT CLOCK  
10 RESET  
E
G
H
Q
Q
F
SHIFT  
11  
10  
12  
13  
G
CLOCK  
Q
H
SERIAL  
DATA  
OUTPUT  
9
RESET  
SQ  
H
GND  
9
SQ  
H
LATCH  
CLOCK  
V
= PIN 16  
CC  
GND = PIN 8  
OUTPUT  
ENABLE  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MC74HC595AN  
PDIP−16  
500 Units / Rail  
500 Units / Rail  
MC74HC595ANG  
PDIP−16  
(Pb−Free)  
MC74HC595AD  
SOIC−16  
48 Units / Rail  
48 Units / Rail  
MC74HC595ADG  
SOIC−16  
(Pb−Free)  
MC74HC595ADR2  
MC74HC595ADR2G  
SOIC−16  
2500 Tape & Reel  
2500 Tape & Reel  
SOIC−16  
(Pb−Free)  
MC74HC595ADT  
MC74HC595ADTR2  
MC74HC595AFEL  
MC74HC595AFELG  
TSSOP−16*  
TSSOP−16*  
SOEIAJ−16  
96 Units / Rail  
2500 Tape & Reel  
2000 Tape & Reel  
2000 Tape & Reel  
SOEIAJ−16  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*This package is inherently Pb−Free.  
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2
MC74HC595A  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
This device contains protection  
circuitry to guard against damage  
due to high static voltages or electric  
fields. However, precautions must  
be taken to avoid applications of any  
voltage higher than maximum rated  
voltages to this high−impedance cir-  
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
– 0.5 to + 7.0  
CC  
V
– 0.5 to V + 0.5  
V
in  
CC  
V
out  
– 0.5 to V + 0.5  
V
CC  
I
± 20  
± 35  
± 75  
mA  
mA  
mA  
mW  
in  
cuit. For proper operation, V and  
in  
I
I
DC Output Current, per Pin  
out  
V
out  
should be constrained to the  
DC Supply Current, V and GND Pins  
range GND v (V or V ) v V  
.
CC  
CC  
in  
out  
CC  
Unused inputs must always be  
tied to an appropriate logic voltage  
P
D
Power Dissipation in Still Air,  
Plastic DIP†  
SOIC Package†  
TSSOP Package†  
750  
500  
450  
level (e.g., either GND or V ).  
CC  
Unused outputs must be left open.  
T
Storage Temperature  
– 65 to + 150  
_C  
_C  
stg  
T
Lead Temperature, 1 mm from Case for 10 Seconds  
(Plastic DIP, SOIC or TSSOP Package)  
L
260  
Maximum ratings are those values beyond which device damage can occur. Maximum ratings  
applied to the device are individual stress limit values (not normal operating conditions) and are  
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,  
damage may occur and reliability may be affected.  
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C  
SOIC Package: – 7 mW/_C from 65_ to 125_C  
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C  
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
Max  
Unit  
V
CC  
DC Supply Voltage (Referenced to GND)  
2.0  
6.0  
V
V , V  
in out  
DC Input Voltage, Output Voltage  
(Referenced to GND)  
0
V
CC  
V
T
Operating Temperature, All Package Types  
– 55  
+ 125  
_C  
ns  
A
t , t  
r
Input Rise and Fall Time  
(Figure 1)  
V
CC  
V
CC  
V
CC  
= 2.0 V  
= 4.5 V  
= 6.0 V  
0
0
0
1000  
500  
400  
f
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)  
Guaranteed Limit  
V
CC  
V
– 55 to 25_C  
v 85_C v 125_C  
Symbol  
Parameter  
Test Conditions  
= 0.1 V or V – 0.1 V  
|I | v 20 mA  
Unit  
V
IH  
Minimum High−Level Input  
Voltage  
V
2.0  
3.0  
4.5  
6.0  
1.5  
2.1  
1.5  
2.1  
1.5  
2.1  
V
out  
CC  
out  
3.15  
4.2  
3.15  
4.2  
3.15  
4.2  
V
Maximum Low−Level Input  
Voltage  
V
= 0.1 V or V – 0.1 V  
2.0  
3.0  
4.5  
6.0  
0.5  
0.9  
1.35  
1.8  
0.5  
0.9  
1.35  
1.8  
0.5  
0.9  
1.35  
1.8  
V
V
IL  
out  
CC  
|I | v 20 mA  
out  
V
OH  
Minimum High−Level Output  
Voltage, Q − Q  
V
in  
= V or V  
IL  
2.0  
4.5  
6.0  
1.9  
4.4  
5.9  
1.9  
4.4  
5.9  
1.9  
4.4  
5.9  
IH  
|I | v 20 mA  
out  
A
H
V
in  
= V or V  
|I | v 2.4 mA  
3.0  
4.5  
6.0  
2.48  
3.98  
5.48  
2.34  
3.84  
5.34  
2.2  
3.7  
5.2  
IH  
IL  
out  
|I | v 6.0 mA  
out  
|I | v 7.8 mA  
out  
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3
MC74HC595A  
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)  
Guaranteed Limit  
V
CC  
– 55 to 25_C  
v 85_C  
0.1  
0.1  
0.1  
v 125_C  
V
Symbol  
Parameter  
Test Conditions  
= V or V  
|I | v 20 mA  
out  
Unit  
V
OL  
Maximum Low−Level Output  
Voltage, Q − Q  
V
in  
2.0  
4.5  
6.0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
IH  
IL  
A
H
V
= V or V  
|I | v 2.4 mA  
3.0  
4.5  
6.0  
0.26  
0.26  
0.26  
0.33  
0.33  
0.33  
0.4  
0.4  
0.4  
in  
IH  
IL  
IL  
out  
|I | v 6.0 mA  
out  
|I | v 7.8 mA  
out  
V
Minimum High−Level Output  
V
in  
= V or V  
2.0  
4.5  
6.0  
1.9  
4.4  
5.9  
1.9  
4.4  
5.9  
1.9  
4.4  
5.9  
V
V
OH  
IH  
Voltage, SQ  
II I v 20 mA  
out  
H
V
= V or V  
|I | v 2.4 mA  
3.0  
4.5  
6.0  
2.98  
3.98  
5.48  
2.34  
3.84  
5.34  
2.2  
3.7  
5.2  
in  
IH  
IL  
out  
II  
out  
I
4.0 mA  
v
II Iv 5.2 mA  
out  
V
Maximum Low−Level Output  
V
in  
= V or V  
2.0  
4.5  
6.0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
OL  
IH  
IL  
Voltage, SQ  
II I v 20 mA  
out  
H
V
V
= V or V  
|I | v 2.4 mA  
3.0  
4.5  
6.0  
0.26  
0.26  
0.26  
0.33  
0.33  
0.33  
0.4  
0.4  
0.4  
in  
IH  
IL  
out  
II  
out  
I
4.0 mA  
v
II Iv 5.2 mA  
out  
I
Maximum Input Leakage  
Current  
= V or GND  
6.0  
± 0.1  
± 1.0  
± 1.0  
mA  
mA  
in  
in  
CC  
I
Maximum Three−State  
Leakage  
Output in High−Impedance State  
= V or V  
6.0  
± 0.5  
± 5.0  
± 10  
OZ  
V
in  
IL  
IH  
Current, Q − Q  
V
= V or GND  
A
H
out CC  
I
Maximum Quiescent Supply  
Current (per Package)  
V
= V or GND  
= 0 mA  
6.0  
4.0  
40  
160  
mA  
CC  
in  
CC  
l
out  
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book  
(DL129/D).  
AC ELECTRICAL CHARACTERISTICS (C = 50 pF, Input t = t = 6.0 ns)  
L
r
f
Guaranteed Limit  
V
CC  
V
– 55 to 25_C  
v 85_C v 125_C  
Symbol  
Parameter  
Unit  
f
Maximum Clock Frequency (50% Duty Cycle)  
(Figures 1 and 7)  
2.0  
3.0  
4.5  
6.0  
6.0  
15  
30  
35  
4.8  
10  
24  
28  
4.0  
8.0  
20  
MHz  
max  
24  
t
t
,
Maximum Propagation Delay, Shift Clock to SQ  
(Figures 1 and 7)  
2.0  
3.0  
4.5  
6.0  
140  
100  
28  
175  
125  
35  
210  
150  
42  
ns  
ns  
ns  
ns  
ns  
PLH  
H
PHL  
24  
30  
36  
t
Maximum Propagation Delay, Reset to SQ  
(Figures 2 and 7)  
2.0  
3.0  
4.5  
6.0  
145  
100  
29  
180  
125  
36  
220  
150  
44  
PHL  
H
25  
31  
38  
t
t
t
,
Maximum Propagation Delay, Latch Clock to Q − Q  
2.0  
3.0  
4.5  
6.0  
140  
100  
28  
175  
125  
35  
210  
150  
42  
PLH  
t
A
H
(Figures 3 and 7)  
PHL  
24  
30  
36  
,
Maximum Propagation Delay, Output Enable to Q − Q  
(Figures 4 and 8)  
2.0  
3.0  
4.5  
6.0  
150  
100  
30  
190  
125  
38  
225  
150  
45  
PLZ  
A
H
t
PHZ  
26  
33  
38  
,
Maximum Propagation Delay, Output Enable to Q − Q  
(Figures 4 and 8)  
2.0  
3.0  
4.5  
6.0  
135  
90  
27  
170  
110  
34  
205  
130  
41  
PZL  
A
H
t
PZH  
23  
29  
35  
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4
MC74HC595A  
AC ELECTRICAL CHARACTERISTICS (C = 50 pF, Input t = t = 6.0 ns)  
L
r
f
Guaranteed Limit  
V
CC  
– 55 to 25_C  
v 85_C  
v 125_C  
V
Symbol  
Parameter  
Unit  
t
,
Maximum Output Transition Time, Q − Q  
2.0  
3.0  
4.5  
6.0  
60  
23  
12  
10  
75  
27  
15  
13  
90  
31  
18  
15  
ns  
TLH  
A
H
t
(Figures 3 and 7)  
THL  
t
t
,
Maximum Output Transition Time, SQ  
(Figures 1 and 7)  
2.0  
3.0  
4.5  
6.0  
75  
27  
15  
13  
95  
32  
19  
16  
110  
36  
22  
ns  
TLH  
H
THL  
19  
C
Maximum Input Capacitance  
10  
15  
10  
15  
10  
15  
pF  
pF  
in  
C
Maximum Three−State Output Capacitance (Output in  
High−Impedance State), Q − Q  
out  
A
H
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON  
Semiconductor High−Speed CMOS Data Book (DL129/D).  
Typical @ 25°C, V = 5.0 V  
CC  
300  
C
Power Dissipation Capacitance (Per Package)*  
pF  
PD  
2
* Used to determine the no−load dynamic power consumption: P = C  
V
f + I V . For load considerations, see Chapter 2 of the  
CC CC  
D
PD CC  
ON Semiconductor High−Speed CMOS Data Book (DL129/D).  
TIMING REQUIREMENTS (Input t = t = 6.0 ns)  
r
f
Guaranteed Limit  
V
CC  
25_C to –55_C v 85_C v 125_C  
V
Symbol  
Parameter  
Unit  
t
Minimum Setup Time, Serial Data Input A to Shift Clock  
(Figure 5)  
2.0  
3.0  
4.5  
6.0  
50  
40  
10  
9.0  
65  
50  
13  
11  
75  
60  
15  
13  
ns  
su  
su  
t
Minimum Setup Time, Shift Clock to Latch Clock  
(Figure 6)  
2.0  
3.0  
4.5  
6.0  
75  
60  
15  
13  
95  
70  
19  
16  
110  
80  
22  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
19  
t
h
Minimum Hold Time, Shift Clock to Serial Data Input A  
(Figure 5)  
2.0  
3.0  
4.5  
6.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
t
Minimum Recovery Time, Reset Inactive to Shift Clock  
(Figure 2)  
2.0  
3.0  
4.5  
6.0  
50  
40  
10  
9.0  
65  
50  
13  
11  
75  
60  
15  
13  
rec  
t
w
t
w
t
w
Minimum Pulse Width, Reset  
(Figure 2)  
2.0  
3.0  
4.5  
6.0  
60  
45  
12  
10  
75  
60  
15  
13  
90  
70  
18  
15  
Minimum Pulse Width, Shift Clock  
(Figure 1)  
2.0  
3.0  
4.5  
6.0  
50  
40  
10  
9.0  
65  
50  
13  
11  
75  
60  
15  
13  
Minimum Pulse Width, Latch Clock  
(Figure 6)  
2.0  
3.0  
4.5  
6.0  
50  
40  
10  
9.0  
65  
50  
13  
11  
75  
60  
15  
13  
t , t  
Maximum Input Rise and Fall Times  
(Figure 1)  
2.0  
3.0  
4.5  
6.0  
1000  
800  
500  
400  
1000  
800  
500  
400  
1000  
800  
500  
400  
r
f
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5
MC74HC595A  
FUNCTION TABLE  
Inputs  
Resulting Function  
Serial  
Input  
A
Shift  
Register  
Contents  
Latch  
Register  
Contents  
Serial  
Output  
Parallel  
Outputs  
Shift  
Clock  
Latch  
Clock  
Output  
Enable  
SQ  
Q
− Q  
Reset  
Operation  
H
A
H
Reset shift register  
L
X
D
X
L, H, ↓  
L, H, ↓  
L
L
L
U
U
L
U
Shift data into shift  
register  
H
D SR ;  
SR SR  
SR SR  
U
A
G
H
N
N+1  
Shift register remains  
unchanged  
H
H
X
X
L, H, ↓  
L, H, ↓  
L, H, ↓  
L
L
U
U
U
U
U
U
Transfer shift register  
contents to latch  
register  
SR LR  
SR  
N
N
N
Latch register remains  
unchanged  
X
X
X
L, H, ↓  
L
*
U
*
U
Enable parallel outputs  
X
X
X
X
X
X
X
X
L
*
*
**  
**  
*
*
Enabled  
Z
Force outputs into high  
impedance state  
H
SR = shift register contents  
LR = latch register contents  
D = data (L, H) logic level  
U = remains unchanged  
= Low−to−High  
= High−to−Low  
* = depends on Reset and Shift Clock inputs  
** = depends on Latch Clock input  
PIN DESCRIPTIONS  
INPUTS  
Output Enable (Pin 13)  
A (Pin 14)  
Active−low Output Enable. A low on this input allows the  
data from the latches to be presented at the outputs. A high  
Serial Data Input. The data on this pin is shifted into the  
8−bit serial shift register.  
on this input forces the outputs (Q −Q ) into the  
A
H
high−impedance state. The serial output is not affected by  
this control unit.  
CONTROL INPUTS  
Shift Clock (Pin 11)  
Shift Register Clock Input. A low− to−high transition on  
this input causes the data at the Serial Input pin to be shifted  
into the 8−bit shift register.  
OUTPUTS  
QA − QH (Pins 15, 1, 2, 3, 4, 5, 6, 7)  
Noninverted, 3−state, latch outputs.  
Reset (Pin 10)  
SQH (Pin 9)  
Active−low, Asynchronous, Shift Register Reset Input. A  
low on this pin resets the shift register portion of this device  
only. The 8−bit latch is not affected.  
Noninverted, Serial Data Output. This is the output of the  
eighth stage of the 8−bit shift register. This output does not  
have three−state capability.  
Latch Clock (Pin 12)  
Storage Latch Clock Input. A low−to−high transition on  
this input latches the shift register data.  
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6
MC74HC595A  
SWITCHING WAVEFORMS  
t
w
t
r
t
f
V
CC  
V
CC  
SHIFT  
90%  
50%  
10%  
50%  
RESET  
CLOCK  
GND  
GND  
t
t
PHL  
w
1/f  
max  
50%  
OUTPUT  
t
t
PHL  
PLH  
SQ  
H
t
rec  
90%  
50%  
10%  
OUTPUT  
V
CC  
SHIFT  
SQ  
H
50%  
CLOCK  
GND  
t
t
TLH  
THL  
Figure 1.  
Figure 2.  
V
CC  
OUTPUT  
ENABLE  
V
50%  
CC  
LATCH  
CLOCK  
50%  
GND  
GND  
t
t
PLZ  
PZL  
HIGH  
IMPEDANCE  
50%  
t
t
PHL  
PLH  
OUTPUT Q  
OUTPUT Q  
10%  
90%  
V
V
OL  
t
t
PHZ  
90%  
50%  
10%  
PZH  
Q −Q  
A
H
OUTPUTS  
OH  
50%  
HIGH  
t
t
THL  
TLH  
IMPEDANCE  
Figure 3.  
Figure 4.  
V
CC  
SHIFT  
50%  
VALID  
CLOCK  
V
CC  
GND  
SERIAL  
50%  
t
su  
INPUT A  
GND  
V
CC  
LATCH  
CLOCK  
t
su  
t
h
50%  
V
CC  
SWITCH  
CLOCK  
GND  
50%  
t
w
GND  
Figure 5.  
Figure 6.  
TEST CIRCUITS  
TEST POINT  
OUTPUT  
TEST POINT  
CONNECT TO V WHEN  
CC  
1 kW  
OUTPUT  
TESTING t AND t  
PLZ  
.
PZL  
DEVICE  
UNDER  
TEST  
DEVICE  
UNDER  
TEST  
CONNECT TO GND WHEN  
TESTING t AND t  
.
PZH  
PHZ  
C *  
L
C *  
L
*Includes all probe and jig capacitance  
*Includes all probe and jig capacitance  
Figure 7.  
Figure 8.  
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7
MC74HC595A  
EXPANDED LOGIC DIAGRAM  
OUTPUT  
ENABLE  
13  
12  
14  
LATCH  
CLOCK  
SERIAL  
DATA  
INPUT A  
15  
D
Q
Q
Q
Q
Q
Q
Q
Q
D
D
D
D
D
D
D
D
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
A
SR  
SR  
SR  
SR  
SR  
LR  
LR  
A
B
C
D
E
A
B
C
D
R
D
1
B
R
D
2
C
D
E
F
LR  
LR  
R
D
3
PARALLEL  
DATA  
OUTPUTS  
R
D
4
LR  
LR  
E
R
D
5
SR  
F
F
R
D
6
G
SR  
G
LR  
G
R
D
7
H
SHIFT  
11  
10  
SR  
H
LR  
H
CLOCK  
R
SERIAL  
DATA  
OUTPUT SQ  
9
RESET  
H
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8
MC74HC595A  
TIMING DIAGRAM  
SHIFT  
CLOCK  
SERIAL DATA  
INPUT A  
RESET  
LATCH  
CLOCK  
OUTPUT  
ENABLE  
Q
A
B
C
D
Q
Q
Q
Q
E
Q
F
Q
G
Q
H
SERIAL DATA  
OUTPUT SQ  
H
NOTE:  
implies that the output is in a high−impedance  
state.  
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9
MC74HC595A  
PACKAGE DIMENSIONS  
PDIP−16  
N SUFFIX  
CASE 648−08  
ISSUE T  
NOTES:  
−A−  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION L TO CENTER OF LEADS  
WHEN FORMED PARALLEL.  
4. DIMENSION B DOES NOT INCLUDE  
MOLD FLASH.  
16  
1
9
8
B
S
5. ROUNDED CORNERS OPTIONAL.  
INCHES  
DIM MIN MAX  
0.740 0.770 18.80 19.55  
MILLIMETERS  
F
C
L
MIN MAX  
A
B
C
D
F
0.250 0.270  
0.145 0.175  
0.015 0.021  
6.35  
3.69  
0.39  
1.02  
6.85  
4.44  
0.53  
1.77  
SEATING  
PLANE  
−T−  
0.040  
0.70  
G
H
J
K
L
0.100 BSC  
2.54 BSC  
1.27 BSC  
K
M
H
J
0.050 BSC  
0.008 0.015  
0.110 0.130  
0.295 0.305  
G
0.21  
0.38  
3.30  
7.74  
10  
D 16 PL  
2.80  
7.50  
0
M
M
0.25 (0.010)  
T
A
M
S
0
10  
_
_
_
_
0.020 0.040  
0.51  
1.01  
SOIC−16  
D SUFFIX  
CASE 751B−05  
ISSUE J  
−A  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSIONS A AND B DO NOT INCLUDE  
MOLD PROTRUSION.  
16  
1
9
−B  
P 8 PL  
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)  
PER SIDE.  
M
M
B
0.25 (0.010)  
8
5. DIMENSION D DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.127 (0.005) TOTAL  
IN EXCESS OF THE D DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
G
MILLIMETERS  
MIN MAX  
9.80 10.00  
INCHES  
MIN MAX  
DIM  
A
0.386 0.393  
0.150 0.157  
0.054 0.068  
0.014 0.019  
0.016 0.049  
0.050 BSC  
F
K
R X 45°  
B
3.80  
1.35  
0.35  
0.40  
4.00  
1.75  
0.49  
1.25  
C
D
C
F
1.27 BSC  
G
J
−T  
0.19  
0.10  
0.25  
0.25  
7°  
0.008 0.009  
0.004 0.009  
J
SEATING  
PLANE  
M
K
Dꢀ16ꢀPL  
M
P
0°  
0°  
0.229 0.244  
7°  
5.80  
0.25  
6.20  
0.50  
M
S
S
A
0.25 (0.010)  
T
B
R
0.010 0.019  
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10  
MC74HC595A  
PACKAGE DIMENSIONS  
TSSOP−16  
DT SUFFIX  
CASE 948F−01  
ISSUE A  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
16X KREF  
M
S
S
V
ANSI Y14.5M, 1982.  
0.10 (0.004)  
T
U
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH. PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
S
0.15 (0.006) T U  
K
K1  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE  
DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08  
(0.003) TOTAL IN EXCESS OF THE K  
DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
16  
9
2X L/2  
J1  
B
−U−  
SECTION N−N  
L
J
PIN 1  
IDENT.  
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE −W−.  
8
1
N
0.25 (0.010)  
S
0.15 (0.006) T U  
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
A
M
−V−  
A
B
4.90  
4.30  
−−−  
0.05  
0.50  
5.10 0.193 0.200  
4.50 0.169 0.177  
N
C
1.20  
−−− 0.047  
D
F
0.15 0.002 0.006  
0.75 0.020 0.030  
F
G
H
J
J1  
K
K1  
L
0.65 BSC  
0.026 BSC  
DETAIL E  
0.18  
0.09  
0.09  
0.19  
0.19  
0.28 0.007 0.011  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
−W−  
C
6.40 BSC  
0.252 BSC  
M
0
8
0
8
_
_
_
_
0.10 (0.004)  
H
DETAIL E  
SEATING  
−T−  
D
PLANE  
G
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11  
MC74HC595A  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
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MC74HC595A/D  

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