MC74HCT273 [ONSEMI]

Octal D Flip-Flop with Common Clock and Reset with LSTTL-Compatible Inputs; 八路D触发器与普通时钟和LSTTL兼容输入复位
MC74HCT273
型号: MC74HCT273
厂家: ONSEMI    ONSEMI
描述:

Octal D Flip-Flop with Common Clock and Reset with LSTTL-Compatible Inputs
八路D触发器与普通时钟和LSTTL兼容输入复位

触发器 时钟
文件: 总8页 (文件大小:155K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
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High–Performance Silicon–Gate CMOS  
MARKING  
DIAGRAMS  
20  
The MC74HCT273A may be used as a level converter for  
interfacing TTL or NMOS outputs to High–Speed CMOS inputs.  
The HCT273A is identical in pinout to the LS273.  
This device consists of eight D flip–flops with common Clock and  
Reset inputs. Each flip–flop is loaded with a low–to–high transition of  
the Clock input. Reset is asynchronous and active low.  
PDIP–20  
N SUFFIX  
CASE 738  
MC74HCT273AN  
AWLYYWW  
20  
1
1
20  
Output Drive Capability: 10 LSTTL Loads  
TTL/NMOS Compatible Input Levels  
Outputs Directly Interface to CMOS, NMOS and TTL  
Operating Voltage Range: 4.5 to 5.5 V  
Low Input Current: 1.0 µA  
SOIC WIDE–20  
DW SUFFIX  
CASE 751D  
HCT273A  
AWLYYWW  
20  
1
1
A
= Assembly Location  
WL = Wafer Lot  
YY = Year  
WW = Work Week  
In Compliance with the Requirements Defined by JEDEC Standard  
No. 7A  
Chip Complexity: 284 FETs or 71 Equivalent Gates  
PIN ASSIGNMENT  
LOGIC DIAGRAM  
2
RESET  
Q0  
1
2
3
4
5
6
7
8
9
20  
V
CC  
3
Q0  
Q1  
Q2  
Q3  
Q4  
Q5  
Q6  
Q7  
D0  
D1  
D2  
D3  
D4  
D5  
D6  
D7  
5
6
19 Q7  
18 D7  
17 D6  
16 Q6  
15 Q5  
14 D5  
13 D4  
12 Q4  
11 CLOCK  
4
D0  
7
D1  
8
9
DATA  
INPUTS  
NONINVERTING  
OUTPUTS  
13  
14  
17  
18  
Q1  
12  
15  
16  
19  
Q2  
D2  
D3  
Q3  
11  
CLOCK  
GND 10  
PIN 20 = V  
CC  
PIN 10 = GND  
1
RESET  
FUNCTION TABLE  
ORDERING INFORMATION  
Inputs  
Reset Clock  
Output  
Device  
Package  
PDIP–20  
Shipping  
D
Q
MC74HCT273AN  
1440 / Box  
38 / Rail  
L
X
X
H
L
X
X
L
H
L
MC74HCT273ADW  
SOIC–WIDE  
H
H
H
H
MC74HCT273ADWR2 SOIC–WIDE 1000 / Reel  
L
No Change  
No Change  
X = Don’t Care  
Z = High Impedance  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
March, 2000 – Rev. 8  
MC74HCT273A/D  
MC74HCT273A  
MAXIMUM RATINGS*  
Symbol  
Parameter  
Value  
Unit  
V
This device contains protection  
circuitry to guard against damage  
due to high static voltages or electric  
fields. However, precautions must  
be taken to avoid applications of any  
voltage higher than maximum rated  
voltages to this high–impedance cir-  
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
– 0.5 to + 7.0  
CC  
V
– 0.5 to V  
+ 0.5  
V
in  
CC  
CC  
V
out  
– 0.5 to V  
+ 0.5  
V
I
± 20  
mA  
mA  
mA  
mW  
in  
cuit. For proper operation, V and  
in  
I
I
DC Output Current, per Pin  
± 25  
± 50  
out  
V
should be constrained to the  
out  
range GND (V or V  
)
V
CC  
.
DC Supply Current, V  
and GND Pins  
CC  
in out  
CC  
Unused inputs must always be  
tied to an appropriate logic voltage  
P
D
Power Dissipation in Still Air  
Plastic DIP†  
SOIC Package†  
750  
500  
level (e.g., either GND or V ).  
CC  
Unused outputs must be left open.  
T
stg  
Storage Temperature  
– 65 to + 150  
C
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds  
(SOIC or Plastic DIP)  
260  
*Maximum Ratings are those values beyond which damage to the device may occur.  
Functional operation should be restricted to the Recommended Operating Conditions.  
†Derating — Plastic DIP: – 10 mW/ C from 65 to 125 C  
SOIC Package: – 7 mW/ C from 65 to 125 C  
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
4.5  
0
Max  
Unit  
V
V
CC  
DC Supply Voltage (Referenced to GND)  
DC Input Voltage, Output Voltage (Referenced to GND)  
Operating Temperature, All Package Types  
Input Rise and Fall Time (Figure 1)  
5.5  
V , V  
in out  
V
CC  
V
T
A
– 55 + 125  
500  
C
t , t  
r f  
0
ns  
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)  
Guaranteed Limit  
– 55 to  
V
CC  
V
25 C  
Symbol  
Parameter  
Test Conditions  
Unit  
85 C  
125 C  
V
Minimum High–Level Input  
Voltage  
V
= 0.1 V or V  
– 0.1 V  
4.5  
5.5  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
V
IH  
out  
CC  
CC  
|I  
|
20 µA  
out  
V
Maximum Low–Level Input  
Voltage  
V
= 0.1 V or V  
– 0.1 V  
4.5  
5.5  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
V
V
IL  
out  
|I  
|
20 µA  
out  
V
OH  
Minimum High–Level Output  
Voltage  
V
= V or V  
IH  
4.5  
5.5  
4.4  
5.4  
4.4  
5.4  
4.4  
5.4  
in  
IL  
IL  
IL  
IL  
|I  
|
20 µA  
out  
V
= V or V  
IH  
in  
|I  
|
4.0 mA  
4.5  
3.98  
3.84  
3.7  
out  
V
OL  
Maximum Low–Level Output  
Voltage  
V
= V or V  
IH  
4.5  
5.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
in  
|I  
|
20 µA  
out  
V
= V or V  
in  
IH  
|I  
|
4.0 mA  
4.5  
5.5  
0.26  
0.33  
0.4  
out  
I
in  
Maximum Input Leakage  
Current  
V
in  
= V  
or GND  
or GND  
± 0.1  
± 1.0  
± 1.0  
µA  
µA  
CC  
I
Maximum Quiescent Supply  
Current (per Package)  
V
= V  
= 0 µA  
5.5  
4.0  
40  
160  
CC  
in  
CC  
I
out  
I  
CC  
Additional Quiescent Supply  
Current  
V
V
l
= 2.4 V, Any One Input  
–55 C  
25 C to 125 C  
in  
in  
out  
= V  
or GND, Other Inputs  
CC  
= 0 µA  
5.5  
2.9  
2.4  
mA  
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book  
(DL129/D).  
http://onsemi.com  
2
MC74HCT273A  
AC ELECTRICAL CHARACTERISTICS (V  
CC  
= 5.0 V ± 10%, C = 50 pF, Input t = t = 6.0 ns)  
L
r
f
Guaranteed Limit  
– 55 to  
25 C  
30  
Symbol  
Parameter  
Maximum Clock Frequency (50% Duty Cycle)  
Maximum Propagation Delay, Clock to Q  
Fig.  
1, 4  
1, 4  
Unit  
MHz  
ns  
85 C  
24  
125 C  
20  
f
max  
t
t
,
25  
28  
35  
PLH  
PHL  
t
Maximum Propagation Delay, Reset to Q  
2, 4  
1, 5  
25  
18  
28  
20  
35  
22  
ns  
ns  
PHL  
t
,
Maximum Output Transition Time, Any Output  
TLH  
t
THL  
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON  
Semiconductor High–Speed CMOS Data Book (DL129/D).  
Typical @ 25°C, V  
= 5.0 V  
CC  
C
Power Dissipation Capacitance (Per Gate)*  
pF  
30  
PD  
2
* Used to determine the no–load dynamic power consumption: P = C  
D
ON Semiconductor High–Speed CMOS Data Book (DL129/D).  
V
f + I  
V . For load considerations, see Chapter 2 of the  
CC CC  
PD CC  
TIMING REQUIREMENTS (V  
= 5.0 V ± 10%, C = 50 pF, Input t = t = 6.0 ns)  
CC  
L
r
f
Guaranteed Limit  
– 55 to 25 C  
85 C  
Max  
125 C  
Max  
Symbol  
Parameter  
Fig.  
3
Unit  
ns  
Min  
10  
Max  
Min  
12  
Min  
15  
t
su  
Minimum Setup Time, Data to Clock  
Minimum Hold Time, Clock to Data  
t
h
3
3.0  
5.0  
12  
3.0  
5.0  
15  
3.0  
5.0  
18  
ns  
t
Minimum Recovery Time, Set or Reset Inactive to Clock  
Minimum Pulse Width, Clock  
2
ns  
rec  
t
1
ns  
w
w
t
Minimum Pulse Width, Set or Reset  
Maximum Input Rise and Fall Times  
2
12  
15  
18  
ns  
t , t  
r f  
1
500  
500  
500  
ns  
http://onsemi.com  
3
MC74HCT273A  
SWITCHING WAVEFORMS  
t
w
t
t
r
f
3.0 V  
GND  
3.0 V  
2.7 V  
1.3 V  
1.3 V  
RESET  
Q
CLOCK  
GND  
0.3 V  
t
PHL  
t
w
1/f  
max  
1.3 V  
t
t
PHL  
PLH  
t
90%  
1.3 V  
10%  
rec  
Q
3.0 V  
GND  
CLOCK  
1.3 V  
t
t
THL  
TLH  
Figure 1.  
Figure 2.  
TEST POINT  
OUTPUT  
VALID  
3.0 V  
GND  
3.0 V  
GND  
DEVICE  
UNDER  
TEST  
DATA  
1.3 V  
C *  
L
t
su  
t
h
1.3 V  
CLOCK  
*Includes all probe and jig capacitance  
Figure 3.  
Figure 4. Test Circuit  
EXPANDED LOGIC DIAGRAM  
C
2
Q
Q
Q
Q
Q
Q
Q
Q
Q0  
Q1  
Q2  
Q3  
Q4  
Q5  
Q6  
Q7  
3
D0  
D1  
D2  
D3  
D4  
D5  
D6  
D
R
C
5
4
D
R
C
6
7
D
R
C
9
8
D
R
NONINVERTING  
OUTPUTS  
DATA  
INPUTS  
C
12  
15  
16  
19  
13  
14  
17  
D
R
C
D
R
C
D
R
C
18  
11  
1
D7  
CLOCK  
RESET  
D
R
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4
MC74HCT273A  
PACKAGE DIMENSIONS  
PDIP–20  
N SUFFIX  
PLASTIC DIP PACKAGE  
CASE 738–03  
ISSUE E  
–A–  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
20  
1
11  
10  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION L TO CENTER OF LEAD WHEN  
FORMED PARALLEL.  
4. DIMENSION B DOES NOT INCLUDE MOLD  
FLASH.  
B
L
C
INCHES  
DIM MIN MAX  
1.070 25.66 27.17  
MILLIMETERS  
MIN MAX  
A
B
C
D
E
F
1.010  
0.240  
0.150  
0.015  
0.050 BSC  
0.050  
0.260  
0.180  
0.022  
6.10  
3.81  
0.39  
1.27 BSC  
1.27  
6.60  
4.57  
0.55  
–T–  
SEATING  
PLANE  
K
M
0.070  
1.77  
N
E
G
0.100 BSC  
2.54 BSC  
J
0.008  
0.110  
0.300 BSC  
0.015  
0.140  
0.21  
2.80  
7.62 BSC  
0
0.51  
0.38  
3.55  
G
F
K
L
M
N
J 20 PL  
D 20 PL  
M
M
0.25 (0.010)  
T B  
0
15  
0.040  
15  
1.01  
0.020  
M
M
0.25 (0.010)  
T A  
SO–20  
DW SUFFIX  
CASE 751D–05  
ISSUE F  
D
A
NOTES:  
1. DIMENSIONS ARE IN MILLIMETERS.  
2. INTERPRET DIMENSIONS AND TOLERANCES  
PER ASME Y14.5M, 1994.  
20  
11  
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
PROTRUSION.  
E
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.  
5. DIMENSION B DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION SHALL  
BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
1
10  
MILLIMETERS  
DIM MIN  
MAX  
2.65  
0.25  
0.49  
0.32  
B
20X B  
A
A1  
B
C
D
E
e
H
h
2.35  
0.10  
0.35  
0.23  
12.65 12.95  
7.40 7.60  
1.27 BSC  
10.05 10.55  
M
S
S
T
0.25  
A
B
A
0.25  
0.50  
0
0.75  
0.90  
7
L
SEATING  
PLANE  
18X e  
A1  
C
T
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5
MC74HCT273A  
Notes  
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6
MC74HCT273A  
Notes  
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7
MC74HCT273A  
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are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
withoutfurthernoticetoanyproductsherein. SCILLCmakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticular  
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
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MC74HCT273A/D  

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