MC74HCT573ADWR2G [ONSEMI]

Octal 3-State Noninverting Transparent Latch with LSTTL Compatible Inputs; 八路三态同相透明锁存器与LSTTL兼容输入
MC74HCT573ADWR2G
型号: MC74HCT573ADWR2G
厂家: ONSEMI    ONSEMI
描述:

Octal 3-State Noninverting Transparent Latch with LSTTL Compatible Inputs
八路三态同相透明锁存器与LSTTL兼容输入

总线驱动器 总线收发器 锁存器 逻辑集成电路 光电二极管 PC
文件: 总8页 (文件大小:153K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MC74HCT573A  
Octal 3-State Noninverting  
Transparent Latch with  
LSTTL Compatible Inputs  
HighPerformance SiliconGate CMOS  
http://onsemi.com  
MARKING  
The MC74HCT573A is identical in pinout to the LS573. This  
device may be used as a level converter for interfacing TTL or NMOS  
outputs to HighSpeed CMOS inputs.  
These latches appear transparent to data (i.e., the outputs change  
asynchronously) when Latch Enable is high. When Latch Enable goes  
low, data meeting the setup and hold times becomes latched.  
The Output Enable input does not affect the state of the latches, but  
when Output Enable is high, all device outputs are forced to the  
highimpedance state. Thus, data may be latched even when the  
outputs are not enabled.  
DIAGRAMS  
20  
20  
PDIP20  
N SUFFIX  
CASE 738  
MC74HCT573AN  
AWLYYWWG  
1
1
20  
The HCT573A is identical in function to the HCT373A but has the  
Data Inputs on the opposite side of the package from the outputs to  
facilitate PC board layout.  
SOIC20  
DW SUFFIX  
CASE 751D  
20  
HCT573A  
AWLYYWWG  
1
Output Drive Capability: 15 LSTTL Loads  
TTL/NMOSCompatible Input Levels  
Outputs Directly Interface to CMOS, NMOS and TTL  
Operating Voltage Range: 4.5 to 5.5 V  
Low Input Current: 10 mA  
1
20  
HCT  
573A  
ALYWG  
G
TSSOP20  
DT SUFFIX  
CASE 948E  
20  
In Compliance with the Requirements Defined by JEDEC Standard  
1
No. 7 A  
1
Chip Complexity: 234 FETs or 58.5 Equivalent Gates  
— Improved Propagation Delays  
— 50% Lower Quiescent Power  
These Devices are PbFree and are RoHS Compliant  
20  
SOEIAJ20  
F SUFFIX  
CASE 967  
20  
74HCT573A  
AWLYWWG  
1
1
A
WL, L  
YY, Y  
= Assembly Location  
= Wafer Lot  
= Year  
WW, W = Work Week  
G or G  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
MC74HCT573ANG  
Package  
Shipping  
PDIP20  
18 / Rail  
MC74HCT573ADWR2G SOIC20 1000 / Reel  
MC74HCT573ADTR2G TSSOP20 2500 / Reel  
MC74HCT573AFELG  
SOEIAJ20 2000 / Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
June, 2011 Rev. 12  
MC74HCT573A/D  
MC74HCT573A  
LOGIC DIAGRAM  
PIN ASSIGNMENT  
OUTPUT  
ENABLE  
2
3
4
19  
1
2
3
4
5
6
7
8
9
20  
V
CC  
D0  
D1  
D2  
Q0  
Q1  
Q2  
18  
17  
D0  
D1  
D2  
D3  
D4  
D5  
D6  
D7  
19 Q0  
18 Q1  
17 Q2  
16 Q3  
15 Q4  
14 Q5  
13 Q6  
12 Q7  
5
6
16  
15  
NONINVERTING  
DATA  
D3  
D4  
Q3  
Q4  
OUTPUTS  
INPUTS  
7
8
9
14  
13  
12  
D5  
D6  
D7  
Q5  
Q6  
Q7  
11  
1
LATCH ENABLE  
PIN 20 = V  
CC  
PIN 10 = GND  
LATCH  
ENABLE  
GND 10  
11  
OUTPUT ENABLE  
FUNCTION TABLE  
Inputs  
Output  
Output Latch  
Enable Enable  
D
Q
L
L
L
H
H
L
H
L
X
X
H
L
No Change  
Z
H
X
X = Don’t Care  
Z = High Impedance  
Design Criteria  
Value  
Units  
ea  
Internal Gate Count*  
58.5  
1.5  
Internal Gate Propagation Delay  
Internal Gate Power Dissipation  
Speed Power Product  
ns  
5.0  
μW  
0.0075  
pJ  
*Equivalent to a twoinput NAND gate.  
http://onsemi.com  
2
MC74HCT573A  
MAXIMUM RATINGS*  
Symbol  
Parameter  
Value  
Unit  
V
This device contains protection  
circuitry to guard against damage  
due to high static voltages or electric  
fields. However, precautions must  
be taken to avoid applications of any  
voltage higher than maximum rated  
voltages to this highimpedance cir-  
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
– 0.5 to + 7.0  
CC  
V
– 0.5 to V + 0.5  
V
in  
CC  
V
out  
– 0.5 to V + 0.5  
V
CC  
I
20  
25  
50  
mA  
mA  
mA  
mW  
in  
cuit. For proper operation, V and  
in  
I
I
DC Output Current, per Pin  
out  
V
out  
should be constrained to the  
range GND v (V or V ) v V  
.
DC Supply Current, V and GND Pins  
in  
out  
CC  
CC  
CC  
Unused inputs must always be  
tied to an appropriate logic voltage  
P
D
Power Dissipation in Still Air  
Plastic DIP†  
SOIC Package†  
TSSOP Package†  
750  
500  
450  
level (e.g., either GND or V ).  
CC  
Unused outputs must be left open.  
T
Storage Temperature  
– 65 to + 150  
_C  
_C  
stg  
T
Lead Temperature, 1 mm from Case for 10 Seconds  
(Plastic DIP, TSSOP or SOIC Package)  
L
260  
*Maximum Ratings are those values beyond which damage to the device may occur.  
Functional operation should be restricted to the Recommended Operating Conditions.  
†Derating — Plastic DIP: 10 mW/_C from 65_ to 125_C  
SOIC Package: 7 mW/_C from 65_ to 125_C  
TSSOP Package: 6.1 mW/°C from 65_ to 125_C  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
4.5  
0
Max  
Unit  
V
V
CC  
DC Supply Voltage (Referenced to GND)  
DC Input Voltage, Output Voltage (Referenced to GND)  
Operating Temperature, All Package Types  
Input Rise and Fall Time (Figure 1)  
5.5  
V , V  
in out  
V
CC  
V
T
A
– 55 + 125  
500  
_C  
ns  
t , t  
0
r
f
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)  
Guaranteed Limit  
– 55 to  
V
CC  
25_C  
V
v 85_C  
v 125_C  
Symbol  
Parameter  
Test Conditions  
= 0.1 V or V – 0.1 V  
Unit  
V
IH  
Minimum HighLevel Input  
V
out  
4.5  
5.5  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
V
out  
CC  
Voltage  
|I | v 20 μA  
V
IL  
Maximum LowLevel Input  
V
out  
= 0.1 V or V – 0.1 V  
4.5  
5.5  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
V
V
CC  
Voltage  
|I | v 20 μA  
out  
V
OH  
Minimum HighLevel Output  
V
in  
= V or V  
IL  
4.5  
5.5  
4.4  
5.4  
4.4  
5.4  
4.4  
5.4  
IH  
Voltage  
|I | v 20 μA  
out  
V
in  
= V or V  
IH IL  
|I | v 6.0 mA  
4.5  
3.98  
3.84  
3.7  
out  
V
OL  
Maximum LowLevel Output  
V
V
in  
= V or V  
IL  
4.5  
5.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
IH  
Voltage  
|I | v 20 μA  
out  
V
in  
= V or V  
IH IL  
|I | v 6.0 mA  
4.5  
5.5  
5.5  
0.26  
0.1  
0.33  
1.0  
0.4  
1.0  
10  
out  
I
Maximum Input Leakage Current  
V
= V or GND  
μA  
μA  
in  
in  
CC  
I
Maximum ThreeState  
Leakage Current  
Output in HighImpedance State  
V = V or V  
in  
0.5  
5.0  
OZ  
IL  
CC  
IH  
V
out  
= V or GND  
I
Maximum Quiescent Supply  
Current (per Package)  
V
I
= V or GND  
5.5  
5.5  
4.0  
40  
160  
μA  
CC  
in  
out  
CC  
v 0 μA  
ΔI  
Additional Quiescent Supply  
Current  
V
V
l
= 2.4 V, Any One Input  
CC  
in  
in  
– 55_C  
25_C to 125_C  
= V or GND, Other Inputs  
CC  
= 0 μA  
2.9  
2.4  
out  
mA  
http://onsemi.com  
3
MC74HCT573A  
AC ELECTRICAL CHARACTERISTICS (V = 5.0 V 10%, C = 50 pF, Input t = t = 6.0 ns)  
CC  
L
r
f
Guaranteed Limit  
– 55 to  
25_C  
v 85_C  
v 125_C  
Symbol  
Parameter  
Unit  
t
,
Maximum Propagation Delay, Input D to Output Q  
(Figures 1 and 5)  
30  
30  
28  
28  
12  
38  
45  
45  
42  
42  
18  
ns  
PLH  
t
PHL  
t
t
Maximum Propagation Delay, Latch Enable to Q  
(Figures 2 and 5)  
38  
35  
35  
15  
ns  
ns  
ns  
ns  
PLH  
PHL  
T
PLZ,  
Maximum Propagation Delay, Output Enable to Q  
(Figures 3 and 6)  
T
PHZ  
t
Maximum Propagation Delay, Output Enable to Q  
(Figures 3 and 6)  
TZL,  
t
TZH  
t
,
Maximum Output Transition Time, any Output  
(Figures 1 and 5)  
TLH  
t
THL  
C
Maximum Input Capacitance  
10  
15  
10  
15  
10  
15  
pF  
pF  
in  
C
Maximum ThreeState Output Capacitance  
(Output in HighImpedance State)  
out  
Typical @ 25°C, V = 5.0 V  
CC  
48  
C
Power Dissipation Capacitance (Per Enabled Output)*  
pF  
PD  
2
* Used to determine the noload dynamic power consumption: P = C  
V
f + I  
V
.
D
PD CC  
CC CC  
TIMING REQUIREMENTS (V = 5.0 V 10%, C = 50 pF, Input t = t = 6.0 ns)  
CC  
L
r
f
Guaranteed Limit  
– 55 to 25_C  
v 85_C  
v 125_C  
Min  
Max  
Min  
Max  
Min  
Max  
Symbol  
Parameter  
Fig.  
4
Unit  
ns  
t
su  
Minimum Setup Time, Input D to Latch Enable  
Minimum Hold Time, Latch Enable to Input D  
Minimum Pulse Width, Latch Enable  
10  
13  
5.0  
19  
15  
5.0  
22  
t
h
4
5.0  
15  
ns  
t
w
2
ns  
t , t  
Maximum Input Rise and Fall Times  
1
500  
500  
500  
ns  
r
f
http://onsemi.com  
4
MC74HCT573A  
SWITCHING WAVEFORMS  
3.0 V  
GND  
LATCH  
t
r
t
f
1.3 V  
ENABLE  
3.0 V  
2.7 V  
1.3 V  
0.3 V  
INPUT D  
t
w
GND  
t
t
PHL  
PLH  
90%  
1.3 V  
10%  
t
t
PHL  
PLH  
Q
1.3 V  
t
t
THL  
TLH  
Q
Figure 1.  
Figure 2.  
OUTPUT  
ENABLE  
3.0 V  
GND  
VALID  
1.3 V  
3.0 V  
GND  
1.3 V  
t
INPUT D  
t
t
PLZ  
PZL  
HIGH  
IMPEDANCE  
Q
1.3 V  
t
h
SU  
3.0 V  
GND  
10%  
90%  
V
V
OL  
t
t
1.3 V  
PZH  
PHZ  
LATCH  
OH  
ENABLE  
Q
1.3 V  
HIGH  
IMPEDANCE  
Figure 3.  
Figure 4.  
EXPANDED LOGIC DIAGRAM  
TEST POINT  
OUTPUT  
2
D0  
D
19  
Q
Q0  
Q1  
Q2  
Q3  
Q4  
Q5  
Q6  
Q7  
LE  
DEVICE  
UNDER  
TEST  
3
D1  
D
C *  
L
18  
17  
16  
15  
14  
13  
12  
Q
LE  
4
D2  
D
Q
LE  
*Includes all probe and jig capacitance  
5
D3  
D
Q
LE  
Figure 5. Test Circuit  
6
D4  
D
Q
LE  
7
D5  
D
TEST POINT  
Q
LE  
CONNECT TO V WHEN  
CC  
8
1 kΩ  
OUTPUT  
D6  
D
TESTING t AND t  
PLZ  
.
PZL  
Q
DEVICE  
UNDER  
TEST  
CONNECT TO GND WHEN  
TESTING t AND t  
LE  
.
PZH  
PHZ  
9
C *  
L
D7  
D
Q
LE  
11  
LATCH ENABLE  
*Includes all probe and jig capacitance  
1
OUTPUT ENABLE  
Figure 6. Test Circuit  
http://onsemi.com  
5
MC74HCT573A  
PACKAGE DIMENSIONS  
PDIP20  
N SUFFIX  
PLASTIC DIP PACKAGE  
CASE 73803  
ISSUE E  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A−  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION L TO CENTER OF LEAD WHEN  
FORMED PARALLEL.  
4. DIMENSION B DOES NOT INCLUDE MOLD  
FLASH.  
20  
1
11  
10  
B
INCHES  
DIM MIN MAX  
1.070 25.66  
MILLIMETERS  
L
C
MIN  
MAX  
27.17  
6.60  
4.57  
0.55  
A
B
C
D
E
1.010  
0.240  
0.150  
0.015  
0.260  
0.180  
0.022  
6.10  
3.81  
0.39  
0.050 BSC  
1.27 BSC  
T−  
SEATING  
PLANE  
K
0.050  
0.100 BSC  
0.070  
1.27  
2.54 BSC  
1.77  
F
G
J
M
0.008  
0.110  
0.015  
0.140  
0.21  
2.80  
0.38  
3.55  
N
E
K
L
0.300 BSC  
7.62 BSC  
G
F
M
N
0
0.020  
15  
_
0.040  
0
_
0.51  
15  
_
1.01  
J 20 PL  
_
D 20 PL  
M
M
B
0.25 (0.010)  
T
M
M
A
0.25 (0.010)  
T
SOIC20  
DW SUFFIX  
CASE 751D05  
ISSUE G  
NOTES:  
1. DIMENSIONS ARE IN MILLIMETERS.  
2. INTERPRET DIMENSIONS AND TOLERANCES  
PER ASME Y14.5M, 1994.  
D
A
q
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
PROTRUSION.  
20  
11  
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.  
5. DIMENSION B DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION  
SHALL BE 0.13 TOTAL IN EXCESS OF B  
DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
E
1
10  
MILLIMETERS  
DIM MIN  
MAX  
2.65  
0.25  
0.49  
0.32  
12.95  
7.60  
A
A1  
B
C
D
E
2.35  
0.10  
0.35  
0.23  
12.65  
7.40  
B
20X B  
M
S
S
B
T
0.25  
A
e
1.27 BSC  
H
h
10.05  
0.25  
0.50  
0
10.55  
0.75  
0.90  
7
A
L
q
_
_
SEATING  
PLANE  
18X e  
A1  
C
T
http://onsemi.com  
6
MC74HCT573A  
PACKAGE DIMENSIONS  
TSSOP20  
DT SUFFIX  
CASE 948E02  
ISSUE C  
NOTES:  
20X K REF  
1. DIMENSIONING AND TOLERANCING PER  
K
K1  
ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION:  
MILLIMETER.  
M
S
S
V
0.10 (0.004)  
T
U
S
T U  
0.15 (0.006)  
3. DIMENSION A DOES NOT INCLUDE  
MOLD FLASH, PROTRUSIONS OR GATE  
BURRS. MOLD FLASH OR GATE BURRS  
SHALL NOT EXCEED 0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION  
SHALL NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE  
DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08  
(0.003) TOTAL IN EXCESS OF THE K  
DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
J J1  
20  
11  
2X L/2  
B
SECTION NN  
L
U−  
PIN 1  
IDENT  
0.25 (0.010)  
N
1
10  
M
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE W.  
S
0.15 (0.006)  
T U  
N
A
V−  
MILLIMETERS  
INCHES  
MIN  
F
DIM MIN  
MAX  
6.60  
4.50  
1.20  
0.15  
0.75  
MAX  
0.260  
0.177  
0.047  
0.006  
0.030  
A
B
6.40  
4.30  
---  
0.252  
0.169  
---  
DETAIL E  
C
D
0.05  
0.50  
0.002  
0.020  
W−  
C
F
G
H
0.65 BSC  
0.026 BSC  
0.27  
0.09  
0.09  
0.19  
0.19  
0.37  
0.20  
0.16  
0.30  
0.25  
0.011  
0.004  
0.004  
0.007  
0.007  
0.015  
0.008  
0.006  
0.012  
0.010  
G
D
J
H
J1  
K
DETAIL E  
0.100 (0.004)  
TSEATING  
K1  
L
6.40 BSC  
0.252 BSC  
0
PLANE  
M
0
8
8
_
_
_
_
SOLDERING FOOTPRINT  
7.06  
1
0.65  
PITCH  
01.36X6  
16X  
1.26  
DIMENSIONS: MILLIMETERS  
http://onsemi.com  
7
MC74HCT573A  
PACKAGE DIMENSIONS  
SOEIAJ20  
F SUFFIX  
CASE 96701  
ISSUE A  
NOTES:  
ꢀꢁ1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
ꢀꢁ2. CONTROLLING DIMENSION: MILLIMETER.  
ꢀꢁ3. DIMENSIONS D AND E DO NOT INCLUDE  
MOLD FLASH OR PROTRUSIONS AND ARE  
MEASURED AT THE PARTING LINE. MOLD FLASH  
OR PROTRUSIONS SHALL NOT EXCEED 0.15  
(0.006) PER SIDE.  
L
E
20  
11  
Q
1
ꢀꢁ4. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
H
E
_
E
M
ꢀꢁ5. THE LEAD WIDTH DIMENSION (b) DOES NOT  
INCLUDE DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)  
TOTAL IN EXCESS OF THE LEAD WIDTH  
DIMENSION AT MAXIMUM MATERIAL CONDITION.  
DAMBAR CANNOT BE LOCATED ON THE LOWER  
RADIUS OR THE FOOT. MINIMUM SPACE  
BETWEEN PROTRUSIONS AND ADJACENT LEAD  
TO BE 0.46 ( 0.018).  
L
1
10  
DETAIL P  
Z
D
VIEW P  
MILLIMETERS  
INCHES  
MIN  
e
A
DIM MIN  
MAX  
2.05  
0.20  
0.50  
0.25  
12.80  
5.45  
MAX  
0.081  
0.008  
0.020  
0.010  
0.504  
0.215  
c
A
---  
0.05  
0.35  
0.15  
12.35  
5.10  
---  
0.002  
0.014  
0.006  
0.486  
0.201  
A
1
b
c
D
E
e
A
b
1
1.27 BSC  
0.050 BSC  
M
0.10 (0.004)  
0.13 (0.005)  
H
7.40  
0.50  
1.10  
8.20  
0.85  
1.50  
0.291  
0.020  
0.043  
0.323  
0.033  
0.059  
E
L
L
E
M
Q
0
10  
10  
_
0.035  
0.032  
0
_
_
_
0.70  
---  
0.90  
0.81  
0.028  
---  
1
Z
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MC74HCT573A/D  

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