MC74LCX157ADTR2G [ONSEMI]

Low-Voltage CMOS Quad 2-Input Multiplexer With 5 V−Tolerant Inputs (Non−Inverting);
MC74LCX157ADTR2G
型号: MC74LCX157ADTR2G
厂家: ONSEMI    ONSEMI
描述:

Low-Voltage CMOS Quad 2-Input Multiplexer With 5 V−Tolerant Inputs (Non−Inverting)

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中文:  中文翻译
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application  
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized  
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Low-Voltage CMOS Quad  
2-Input Multiplexer  
With 5 VTolerant Inputs  
(NonInverting)  
MC74LCX157A  
www.onsemi.com  
The MC74LCX157A is a high performance, quad 2input  
multiplexer operating from a 1.65 to 3.6 V supply. High impedance  
TTL compatible inputs significantly reduce current loading to input  
drivers while TTL compatible outputs offer improved switching noise  
MARKING  
performance. A V specification of 5.5 V allows MC74LCX157A  
DIAGRAMS  
I
inputs to be safely driven from 5 V devices.  
16  
1
Four bits of data from two sources can be selected using the Select  
and Enable inputs. The four outputs present the selected data in the  
true (noninverted) form. The MC74LCX157A can also be used as  
a function generator. Current drive capability is 24 mA at the outputs.  
SOIC16  
D SUFFIX  
CASE 751B  
LCX157G  
AWLYWW  
16  
1
Features  
16  
Designed for 1.65 to 3.6 V V Operation  
CC  
5 V Tolerant Inputs Interface Capability With 5 V TTL Logic  
LVTTL Compatible  
LCX  
157  
TSSOP16  
DT SUFFIX  
CASE 948F  
16  
ALYWG  
LVCMOS Compatible  
1
G
24 mA Balanced Output Sink and Source Capability  
Near Zero Static Supply Current (10 mA) Substantially Reduces  
System Power Requirements  
1
A
WL, L  
Y
WW, W  
G or G  
=
=
=
=
Assembly Location  
Wafer Lot  
Latchup Performance Exceeds 100 mA  
ESD Performance:  
Year  
Work Week  
Human Body Model >2000 V  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
June, 2021 Rev. 0  
MC74LCX157A/D  
MC74LCX157A  
V
E
I0c  
14  
I1c  
13  
Zc  
12  
I0d  
11  
I1d  
10  
Zd  
9
CC  
PIN NAMES  
16  
15  
Pins  
I0n  
I1n  
E
Function  
Source 0 Data Inputs  
Source 1 Data Inputs  
Enable Input  
S
Select Input  
1
2
3
4
5
6
7
8
Zn  
Outputs  
S
I0a  
I1a  
Za  
I0b  
I1b  
Zb GND  
Figure 1. 16Lead Pinout (Top View)  
1
S
15  
E
2
4
I0a  
Za  
3
I1a  
5
7
I0b  
Zb  
6
I1b  
14  
12  
I0c  
Zc  
13  
I1c  
11  
9
I0d  
Zd  
10  
I1d  
Figure 2. Logic Diagram  
TRUTH TABLE  
Inputs  
Outputs  
E
S
I0n  
I1n  
Zn  
H
L
L
L
L
X
H
H
L
X
X
X
L
X
L
H
X
X
L
L
H
L
H
L
H
H = High Voltage Level; L = Low Voltage Level; X = High or Low Voltage Level ; For I Reasons DO  
CC  
NOT FLOAT Inputs  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MC74LCX157ADR2G  
SOIC16  
(PbFree)  
2500 Tape & Reel  
2500 Tape & Reel  
(Contact ON Semiconductor)  
MC74LCX157ADTR2G  
TSSOP16  
(PbFree)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
2
MC74LCX157A  
Table 1. MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
CC  
DC Supply Voltage  
0.5 to +6.5  
0.5 to +6.5  
V
DC Input Voltage (Note 1)  
DC Output Voltage (Note 1)  
V
I
V
O
ActiveMode (High or Low State)  
TriState Mode  
PowerDown Mode (V = 0 V)  
0.5 to V + 0.5  
V
CC  
0.5 to +6.5  
0.5 to +6.5  
CC  
I
DC Input Diode Current  
V
< GND  
< GND  
OUT  
50  
mA  
mA  
mA  
mA  
mA  
°C  
IK  
IN  
I
DC Output Diode Current  
DC Output Source/Sink Current  
DC Supply Current Per Supply Pin  
DC Supply Current Per Ground Pin  
Storage Temperature Range  
Moisture Sensitivity  
V
50  
OK  
I
50  
100  
O
I
CC  
I
100  
GND  
T
65 to +150  
Level 1  
STG  
MSL  
F
R
Flammability Rating  
Oxygen Index: 28 to 34  
UL 94 V0 @ 0.125 in  
V
ESD  
ESD Withstand Voltage (Note 2)  
Human Body Model  
Charged Device Model  
> 2000  
N/A  
V
I
Latchup Performance (Note 3)  
100  
mA  
LATCHUP  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. I absolute maximum rating must be observed.  
O
2. HBM tested to EIA / JESD22A114A. CDM tested to JESD22C101A. JEDEC recommends that ESD qualification to EIA/JESD22A115A  
(Machine Model) be discontinued.  
3. Tested to EIA/JESD78 Class II.  
Table 2. RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
1.65  
1.5  
0
Typ  
3.3  
3.3  
Max  
3.6  
3.6  
5.5  
Unit  
V
CC  
Supply Voltage  
Operating  
V
Data Retention Only  
V
I
Digital Input Voltage  
Output Voltage  
V
V
V
O
Active Mode (High or Low State)  
0
V
CC  
TriState Mode  
0
5.5  
5.5  
Power Down Mode (V = 0 V)  
0
CC  
T
A
Operating FreeAir Temperature  
40  
+125  
°C  
t , t  
Input Transition Rise or Fall Rate  
nS/V  
r
f
V = from 0.8 V to 2.0 V, V = 3.0 V  
0
10  
I
CC  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
www.onsemi.com  
3
 
MC74LCX157A  
Table 3. DC ELECTRICAL CHARACTERISTICS  
T
= 405C to +855C  
T
= 405C to +1255C  
A
A
Min  
Max  
Min  
Max  
Symbol  
Parameter  
Conditions  
V
CC  
(V)  
Unit  
V
HighLevel Input  
1.65 to 1.95  
2.3 to 2.7  
2.7 to 3.6  
1.65 to 1.95  
2.3 to 2.7  
2.7 to 3.6  
0.65 x V  
0.65 x V  
CC  
V
IH  
CC  
Voltage  
1.7  
2.0  
1.7  
2.0  
V
LowLevel Input  
0.35 x V  
0.7  
0.35 x V  
0.7  
V
V
IL  
CC  
CC  
Voltage  
0.8  
0.8  
V
OH  
HighLevel  
Output Voltage  
V = V or V  
I IH IL  
I
I
I
I
I
I
= 100 mA  
= 4 mA  
1.65 to 3.6  
1.65  
2.3  
V
CC  
– 0.2  
V – 0.2  
CC  
OH  
OH  
OH  
OH  
OH  
OH  
1.2  
1.2  
= 8 mA  
1.8  
2.2  
2.4  
2.2  
1.8  
2.2  
2.4  
2.2  
= 12 mA  
= 16 mA  
= 24 mA  
2.7  
3.0  
3.0  
V
LowLevel  
V = V or V  
IL  
V
OL  
I
IH  
Output Voltage  
I
OL  
I
OL  
I
OL  
I
OL  
I
OL  
I
OL  
= 100 mA  
= 4 mA  
1.65 to 3.6  
1.65  
2.3  
0.2  
0.45  
0.6  
0.2  
0.45  
0.6  
0.4  
0.4  
0.6  
5.0  
= 8 mA  
= 12 mA  
= 16 mA  
= 24 mA  
2.7  
0.4  
3.0  
0.4  
3.0  
0.55  
5.0  
I
Input Leakage  
Current  
V = 0 to 5.5 V  
I
3.6  
mA  
mA  
mA  
mA  
I
I
Power Off  
Leakage Current  
V = 5.5 V or  
0
10  
10  
20  
10  
OFF  
I
V = 5.5 V  
O
I
Quiescent Supply V = 5.5 V or GND  
3.6  
CC  
I
Current  
DI  
Increase in I  
per Input  
V
IH  
= V – 0.6 V  
2.3 to 3.6  
500  
500  
CC  
CC  
CC  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
4
MC74LCX157A  
Table 4. AC ELECTRICAL CHARACTERISTICS  
T
A
= 405C to +855C  
T
A
= 405C to +1255C  
Min  
Max  
11.4  
8.7  
Min  
Max  
11.4  
8.7  
Symbol  
Parameter  
Test Condition  
V
CC  
(V)  
Unit  
t
t
t
,
Propagation Delay,  
In to Zn  
See Figures 3 and 4  
1.65 to 1.95  
2.3 to 2.7  
2.7  
ns  
PLH  
t
PHL  
6.3  
6.3  
3.0 to 3.6  
1.65 to 1.95  
2.3 to 2.7  
2.7  
5.8  
5.8  
,
Propagation Delay,  
S to Zn  
See Figures 3 and 4  
See Figures 3 and 4  
13.0  
9.0  
13.0  
9.0  
ns  
ns  
PLH  
t
PHL  
8.0  
8.0  
3.0 to 3.6  
1.65 to 1.95  
2.3 to 2.7  
2.7  
7.0  
7.0  
,
Propagation Delay,  
to Zn  
13.0  
9.0  
13.0  
9.0  
PLH  
t
PHL  
8.0  
8.0  
3.0 to 3.6  
7.0  
7.0  
Table 5. DYNAMIC SWITCHING CHARACTERISTICS  
T
A
= +255C  
Typ  
Min  
Max  
Symbol  
Parameter  
Test Condition  
V
(V)  
Unit  
V
CC  
V
V
Dynamic LOW Peak Voltage (Note 4)  
Dynamic LOW Valley Voltage (Note 4)  
C = 50 pF, V = 3.3 V, V = 0 V  
3.3  
3.3  
0.8  
OLP  
L
IH  
IL  
C = 50 pF, V = 3.3 V, V = 0 V  
0.8  
V
OLV  
L
IH  
IL  
4. Number of outputs defined as “n”. Measured with “n1” outputs switching from HIGHtoLOW or LOWtoHIGH. The remaining output is  
measured in the LOW state.  
Table 6. CAPACITIVE CHARACTERISTICS  
Symbol  
Parameter  
Input Capacitance  
Test Condition  
= 3.3 V, V = 0 V or V  
Typical (T = 255C)  
Unit  
A
C
V
V
7
pF  
IN  
CC  
I
CC  
CC  
C
Output Capacitance  
= 3.3 V, V = 0 V or V  
I
8
OUT  
CC  
C
Power Dissipation Capacitance (Note 5)  
10 MHz, V = 3.3 V, V = 0 V or V  
CC  
25  
PD  
CC  
I
5. C is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without  
PD  
load. Average operating current can be obtained by the equation I  
= C x V x f + I . C is used to determine the noload  
CC(OPR)  
PD CC in CC PD  
2
dynamic power consumption: P = C x V  
x f + I x V  
D
PD  
CC  
in CC CC.  
www.onsemi.com  
5
 
MC74LCX157A  
OPEN  
Test  
/ t  
Switch Position  
VLOAD  
GND  
t
Open  
PLH PHL  
t
/ t  
V
LOAD  
PLZ PZL  
RL  
t
/ t  
GND  
PHZ PZH  
INPUT  
DUT  
OUTPUT  
CL*  
RT  
RL  
C includes probe and jig capacitance  
L
T
R is Z  
of pulse generator (typically 50 W)  
OUT  
f = 1 MHz  
Figure 3. Test Circuit  
VCC  
tr = 2.5 ns  
tf = 2.5 ns  
VCC  
90%  
90%  
Vm  
Vm  
INPUT  
Vm  
Vm  
INPUT  
GND  
10%  
10%  
GND  
tPZL  
tPLZ  
~ VCC  
tPHL  
tPLH  
VOH  
Vm  
OUTPUT  
Vm  
Vm  
OUTPUT  
VOL + VY  
VOL  
VOL  
tPZH  
tPHZ  
tPLH  
tPHL  
VOH  
VOH - VY  
VOH  
Vm  
OUTPUT  
Vm  
Vm  
OUTPUT  
~0 V  
VOL  
Figure 4. Switching Waveforms  
V
CC  
, V  
R , W  
L
C , pF  
L
V
LOAD  
V , V  
m
V , V  
Y
1.65 to 1.95  
2.3 to 2.7  
2.7  
500  
500  
500  
500  
30  
30  
50  
50  
2 x V  
2 x V  
V
V
/2  
/2  
0.15  
0.15  
0.3  
CC  
CC  
CC  
CC  
6 V  
6 V  
1.5  
1.5  
3.0 to 3.6  
0.3  
www.onsemi.com  
6
MC74LCX157A  
PACKAGE DIMENSIONS  
TSSOP16  
DT SUFFIX  
CASE 948F  
ISSUE B  
16X KREF  
NOTES:  
M
S
S
0.10 (0.004)  
T U  
V
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
S
0.15 (0.006) T U  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH. PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE  
DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08  
(0.003) TOTAL IN EXCESS OF THE K  
DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
K
K1  
16  
9
2X L/2  
J1  
SECTION NN  
B
U−  
L
J
PIN 1  
IDENT.  
N
8
0.25 (0.010)  
1
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE W.  
M
S
0.15 (0.006) T U  
A
V−  
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
N
A
B
C
4.90  
4.30  
−−−  
5.10 0.193 0.200  
4.50 0.169 0.177  
F
1.20  
−−− 0.047  
DETAIL E  
D
F
0.05  
0.50  
0.15 0.002 0.006  
0.75 0.020 0.030  
G
H
J
J1  
K
K1  
L
M
0.65 BSC  
0.026 BSC  
0.18  
0.09  
0.09  
0.19  
0.19  
0.28 0.007 0.011  
W−  
C
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
0.10 (0.004)  
H
DETAIL E  
SEATING  
PLANE  
T−  
6.40 BSC  
0.252 BSC  
D
G
0
8
0
8
_
_
_
_
SOLDERING FOOTPRINT*  
7.06  
1
0.65  
PITCH  
01.36X6  
16X  
1.26  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
7
MC74LCX157A  
PACKAGE DIMENSIONS  
SOIC16  
D SUFFIX  
CASE 751B05  
ISSUE K  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A−  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSIONS A AND B DO NOT INCLUDE  
MOLD PROTRUSION.  
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)  
PER SIDE.  
5. DIMENSION D DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.127 (0.005) TOTAL  
IN EXCESS OF THE D DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
16  
9
8
B−  
P 8 PL  
M
S
B
0.25 (0.010)  
1
MILLIMETERS  
INCHES  
MIN  
0.386  
G
DIM MIN  
MAX  
MAX  
0.393  
0.157  
0.068  
0.019  
0.049  
A
B
C
D
F
9.80  
3.80  
1.35  
0.35  
0.40  
10.00  
4.00 0.150  
1.75 0.054  
0.49 0.014  
1.25 0.016  
F
R X 45  
K
_
G
J
1.27 BSC  
0.050 BSC  
C
0.19  
0.10  
0
0.25 0.008  
0.25 0.004  
0.009  
0.009  
7
T−  
SEATING  
PLANE  
K
M
P
R
J
7
0
_
_
_
_
M
5.80  
0.25  
6.20 0.229  
0.50 0.010  
0.244  
0.019  
D
16 PL  
M
S
S
0.25 (0.010)  
T B  
A
SOLDERING FOOTPRINT*  
8X  
6.40  
16X  
1.12  
1
16  
16X  
0.58  
1.27  
PITCH  
8
9
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
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