MC74LCX257DTR2 [ONSEMI]

Low-Voltage CMOS Quad 2-Input Multiplexer With 5.0 V−Tolerant Inputs and Outputs (3−State, Non−Inverting); 低电压CMOS四2输入多路复用器采用5.0 V容限输入和输出(三态,非反相)
MC74LCX257DTR2
型号: MC74LCX257DTR2
厂家: ONSEMI    ONSEMI
描述:

Low-Voltage CMOS Quad 2-Input Multiplexer With 5.0 V−Tolerant Inputs and Outputs (3−State, Non−Inverting)
低电压CMOS四2输入多路复用器采用5.0 V容限输入和输出(三态,非反相)

解复用器 逻辑集成电路 光电二极管
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MC74LCX257  
Low−Voltage CMOS Quad  
2−Input Multiplexer  
With 5.0 V−Tolerant Inputs and Outputs  
(3−State, Non−Inverting)  
http://onsemi.com  
MARKING  
The MC74LCX257 is a high performance, quad 2−input  
multiplexer with 3−state outputs operating from a 2.3 to 3.6 V supply.  
High impedance TTL compatible inputs significantly reduce current  
loading to input drivers while TTL compatible outputs offer improved  
DIAGRAMS  
16  
switching noise performance. A V specification of 5.5 V allows  
I
SOIC−16  
D SUFFIX  
CASE 751B  
LCX257  
AWLYWW  
MC74LCX257 inputs to be safely driven from 5.0 V devices.  
Four bits of data from two sources can be selected using the Select  
input. The four outputs present the selected data in the true  
(non−inverted) form. The outputs may be switched to a high  
impedance state by placing a logic HIGH on the Output Enable (OE)  
input. Current drive capability is 24 mA at the outputs.  
16  
1
1
16  
TSSOP−16  
DT SUFFIX  
CASE 948F  
LCX  
257  
ALYW  
Features  
16  
Designed for 2.3 to 3.6 V V Operation  
CC  
1
5.0 V Tolerant − Interface Capability with 5.0 V TTL Logic  
Supports Live Insertion and Withdrawal  
I  
Specification Guarantees High Impedance When V = 0 V  
1
OFF  
CC  
16  
LVTTL Compatible  
LVCMOS Compatible  
SOEIAJ−16  
M SUFFIX  
CASE 966  
74LCX257  
ALYW  
24 mA Balanced Output Sink and Source Capability  
Near Zero Static Supply Current in All Three Logic States (10 mA)  
Substantially Reduces System Power Requirements  
Latchup Performance Exceeds 500 mA  
16  
1
1
ESD Performance:  
Human Body Model >2000 V  
Machine Model >200 V  
A
L, WL  
Y
= Assembly Location  
= Wafer Lot  
= Year  
Pb−Free Packages are Available*  
W, WW = Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
January, 2005 − Rev. 3  
MC74LCX257/D  
MC74LCX257  
I0c I1c  
Zc  
I0d  
I1d  
2
V
OE  
Zd  
CC  
4
I0a  
Za  
Zb  
Zc  
Zd  
16  
15  
14  
13  
12  
11  
10  
9
3
I1a  
5
7
I0b  
6
I1b  
14  
12  
9
I0c  
1
2
3
4
5
6
7
8
I1a  
I1b  
13  
I0a  
S
Za I0b  
Zb GND  
I1c  
Figure 1. Pinout: 16−Lead Plastic Package  
11  
I0d  
(Top View)  
10  
I1d  
15  
OE  
1
S
Figure 2. Logic Diagram  
PIN NAMES  
Pins  
Function  
Source 0 Data Inputs  
Source 1 Data Inputs  
Output Enable Input  
Select Input  
l0n  
l1n  
OE  
S
Zn  
Outputs  
TRUTH TABLE  
Inputs  
Outputs  
OE  
H
L
S
X
H
H
L
l0n  
X
l1n  
X
Zn  
Z
X
L
L
L
X
H
X
H
L
L
L
L
L
H
X
H
H = High Voltage Level  
L
X
Z
=
=
=
Low Voltage Level  
High or Low Voltage Level and Transitions are Acceptable  
High Impedance State  
For ICC reasons, DO NOT FLOAT Inputs  
http://onsemi.com  
2
MC74LCX257  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Condition  
Unit  
V
V
V
V
DC Supply Voltage  
−0.5 to +7.0  
CC  
I
DC Input Voltage  
−0.5 V +7.0  
V
I
DC Output Voltage  
−0.5 V +7.0  
Output in 3−State  
V
O
I
−0.5 V V + 0.5  
Output in HIGH or LOW State (Note 1)  
V
O
CC  
I
I
DC Input Diode Current  
DC Output Diode Current  
−50  
V < GND  
mA  
mA  
mA  
mA  
mA  
mA  
°C  
IK  
I
−50  
+50  
V < GND  
O
OK  
V
O
> V  
CC  
I
I
I
DC Output Source/Sink Current  
DC Supply Current Per Supply Pin  
DC Ground Current Per Ground Pin  
Storage Temperature Range  
±50  
O
±100  
±100  
CC  
GND  
T
−65 to +150  
STG  
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit  
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,  
damage may occur and reliability may be affected.  
1. I absolute maximum rating must be observed.  
O
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
Type  
Max  
Unit  
V
CC  
Supply Voltage  
Operating  
Data Retention Only  
2.0  
1.5  
2.5, 3.3  
2.5, 3.3  
3.6  
3.6  
V
V
V
Input Voltage  
0
5.5  
V
V
I
Output Voltage  
(HIGH or LOW State)  
(3−State)  
0
0
V
CC  
5.5  
O
I
HIGH Level Output Current  
LOW Level Output Current  
V
V
V
= 3.0 V − 3.6 V  
= 2.7 V − 3.0 V  
= 2.3 V − 2.7 V  
−24  
−12  
−8  
mA  
mA  
OH  
CC  
CC  
CC  
I
OL  
V
CC  
V
CC  
V
CC  
= 3.0 V − 3.6 V  
= 2.7 V − 3.0 V  
= 2.3 V − 2.7 V  
+24  
+12  
+8  
T
Operating Free−Air Temperature  
Input Transition Rise or Fall Rate, V from 0.8 V to 2.0 V,  
−40  
0
+85  
10  
°C  
A
Dt/DV  
ns/V  
IN  
V
CC  
= 3.0 V  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MC74LCX257DR2  
MC74LCX257DR2G  
SOIC−16  
2500 Tape & Reel  
2500 Tape & Reel  
SOIC−16  
(Pb−Free)  
MC74LCX257DT  
MC74LCX257DTR2  
MC74LCX257M  
TSSOP−16*  
TSSOP−16*  
SOEIAJ−16  
SOEIAJ−16  
96 Units / Rail  
2500 Tape & Reel  
48 Units / Rail  
MC74LCX257MEL  
2000 Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*This package is inherently Pb−Free.  
http://onsemi.com  
3
 
MC74LCX257  
DC ELECTRICAL CHARACTERISTICS  
T
A
= −40°C to +85°C  
Symbol  
Characteristic  
Condition  
Min  
1.7  
2.0  
Max  
Unit  
V
V
V
HIGH Level Input Voltage (Note 2)  
2.3 V V 2.7 V  
V
IH  
CC  
2.7 V V 3.6 V  
CC  
LOW Level Input Voltage (Note 2)  
HIGH Level Output Voltage  
2.3 V V 2.7 V  
0.7  
0.8  
V
V
IL  
CC  
2.7 V V 3.6 V  
CC  
2.3 V V 3.6 V; I = −100 mA  
V
− 0.2  
OH  
CC  
OH  
CC  
V
= 2.3 V; I = −8 mA  
1.8  
2.2  
2.4  
2.2  
CC  
OH  
V
CC  
V
CC  
V
CC  
= 2.7 V; I = −12 mA  
OH  
= 3.0 V; I = −18 mA  
OH  
= 3.0 V; I = −24 mA  
OH  
V
LOW Level Output Voltage  
2.3 V V 3.6 V; I = 100 mA  
0.2  
0.6  
0.4  
0.4  
0.55  
±5  
V
OL  
CC  
OL  
V
CC  
= 2.3 V; I = 8 mA  
OL  
V
CC  
V
CC  
V
CC  
= 2.7 V; I = 12 mA  
OL  
= 3.0 V; I = 16 mA  
OL  
= 3.0 V; I = 24 mA  
OL  
I
I
Input Leakage Current  
3−State Output Current  
2.3 V V 3.6 V; 0 V V 5.5 V  
mA  
mA  
I
CC  
I
2.3 V 3.6 V; 0 V V 5.5 V;  
±5  
OZ  
CC  
O
V = V or V  
IL  
I
IH  
I
I
Power−Off Leakage Current  
Quiescent Supply Current  
V
= 0 V; V or V = 5.5 V  
10  
10  
mA  
mA  
OFF  
CC  
I
O
2.3 V 3.6 V; V = GND or V  
CC  
CC  
CC  
I
2.3 V 3.6 V; 3.6 V or V 5.5 V  
±10  
500  
CC  
I
O
DI  
CC  
Increase in I per Input  
2.3 V 3.6 V; V = V − 0.6 V  
mA  
CC  
CC  
IH  
CC  
2. These values of V are used to test DC electrical characteristics only.  
I
AC CHARACTERISTICS t = t = 2.5 ns; R = 500 W  
R
F
L
Limits  
= −40°C to +85°C  
T
A
V
CC  
= 3.3 V ± 0.3 V  
V
CC  
= 2.7 V  
V = 2.5 V ± 0.2 V  
CC  
C = 50 pF  
L
C = 50 pF  
L
C = 30 pF  
L
Symbol  
Parameter  
Propagation Delay  
In to Zn  
Waveform  
Min  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
Max  
6.0  
6.0  
7.0  
7.0  
7.0  
7.0  
5.5  
5.5  
1.0  
1.0  
Min  
Max  
6.5  
6.5  
8.5  
8.5  
8.5  
8.5  
6.0  
6.0  
Min  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
Max  
7.2  
7.2  
9.1  
9.1  
9.1  
9.1  
6.6  
6.6  
Unit  
t
t
t
t
t
t
t
t
t
t
1
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
ns  
PLH  
PHL  
PLH  
PHL  
PZH  
PZL  
Propagation Delay  
S to Zn  
1, 2  
3
ns  
ns  
ns  
ns  
Output Enable Time to  
High and Low Level  
Output Disable Time From  
High and Low Level  
Output−to−Output Skew  
(Note 3)  
3
PHZ  
PLZ  
OSHL  
OSLH  
3. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.  
The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (t  
) or LOW−to−HIGH (t  
); parameter  
OSHL  
OSLH  
guaranteed by design.  
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4
 
MC74LCX257  
DYNAMIC SWITCHING CHARACTERISTICS  
T
A
= +25°C  
Symbol  
Characteristic  
Condition  
Min  
Typ  
Max  
Unit  
V
OLP  
Dynamic LOW Peak Voltage  
(Note 4)  
V
V
= 3.3 V, C = 50 pF, V = 3.3 V, V = 0 V  
0.8  
0.6  
V
V
CC  
L
IH  
IL  
= 2.5 V, C = 30 pF, V = 2.5 V, V = 0 V  
CC  
L
IH  
IL  
V
OLV  
Dynamic LOW Valley Voltage  
(Note 4)  
V
V
= 3.3 V, C = 50 pF, V = 3.3 V, V = 0 V  
−0.8  
−0.6  
V
V
CC  
L
IH  
IL  
= 2.5 V, C = 30 pF, V = 2.5 V, V = 0 V  
CC  
L
IH  
IL  
4. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is  
measured in the LOW state.  
CAPACITIVE CHARACTERISTICS  
Symbol  
Parameter  
Input Capacitance  
Condition  
= 3.3 V, V = 0 V or V  
Typical  
Unit  
pF  
C
C
C
V
V
7
8
IN  
CC  
I
CC  
CC  
Input/Output Capacitance  
= 3.3 V, V = 0 V or V  
pF  
I/O  
PD  
CC  
I
Power Dissipation Capacitance  
10 MHz, V = 3.3 V, V = 0 V or V  
25  
pF  
CC  
I
CC  
V
CC  
V
CC  
Vmi  
Vmi  
Vmi  
Vmi  
In, S  
S
0 V  
V
0 V  
t
t
t
t
PHL  
PLH  
PHL  
PLH  
V
OH  
OH  
Vmo  
Vmo  
Vmo  
Vmo  
Zn  
Zn  
V
OL  
V
OL  
WAVEFORM 1 − NON−INVERTING PROPAGATION DELAYS  
= t = 2.5 ns, 10% to 90%; f = 1.0 MHz; t = 500 ns  
WAVEFORM 2 − INVERTING PROPAGATION DELAYS  
= t = 2.5 ns, 10% to 90%; f = 1.0 MHz; t = 500 ns  
t
R
t
R
F
W
F
W
V
CC  
Vmi  
Vmi  
OE  
0 V  
t
t
t
t
PZH  
PHZ  
V
V
V
CC  
OH  
− 0.3  
Vmo  
Vmo  
Zn  
0 V  
PZL  
PLZ  
3.0V  
Zn  
V
OL  
+ 0.3 V  
GND  
WAVEFORM 3 − OUTPUT ENABLE AND DISABLE TIMES  
t
R
= t = 2.5 ns, 10% to 90%; f = 1.0 MHz; t = 500 ns  
F W  
Vcc  
2.7 V  
1.5 V  
1.5 V  
Symbol  
Vmi  
3.3 V + 0.3 V  
1.5 V  
2.5 V + 0.2 V  
Vcc/2  
Vmo  
1.5 V  
Vcc/2  
V
V
+ 0.3 V  
− 0.3 V  
V
+ 0.3 V  
V
+ 0.15 V  
− 0.15 V  
HZ  
LZ  
OL  
OL  
OL  
V
V
OH  
V
OH  
− 0.3 V  
V
OH  
Figure 3. AC Waveforms  
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5
 
MC74LCX257  
PACKAGE DIMENSIONS  
SOIC−16  
D SUFFIX  
CASE 751B−05  
ISSUE J  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
−A−  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSIONS A AND B DO NOT INCLUDE  
MOLD PROTRUSION.  
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)  
PER SIDE.  
5. DIMENSION D DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.127 (0.005) TOTAL  
IN EXCESS OF THE D DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
16  
9
8
−B−  
P 8 PL  
M
S
B
0.25 (0.010)  
1
MILLIMETERS  
INCHES  
MIN  
0.386  
G
DIM MIN  
MAX  
MAX  
0.393  
0.157  
0.068  
0.019  
0.049  
A
B
C
D
F
9.80  
3.80  
1.35  
0.35  
0.40  
10.00  
4.00 0.150  
1.75 0.054  
0.49 0.014  
1.25 0.016  
F
R X 45  
K
_
G
J
1.27 BSC  
0.050 BSC  
C
0.19  
0.10  
0
0.25 0.008  
0.25 0.004  
0.009  
0.009  
7
−T−  
SEATING  
PLANE  
K
M
P
R
J
7
0
_
_
_
_
M
5.80  
0.25  
6.20 0.229  
0.50 0.010  
0.244  
0.019  
D
16 PL  
M
S
S
0.25 (0.010)  
T
B
A
TSSOP−16  
DT SUFFIX  
CASE 948F−01  
ISSUE O  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.  
PROTRUSIONS OR GATE BURRS. MOLD FLASH  
OR GATE BURRS SHALL NOT EXCEED 0.15  
(0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE INTERLEAD  
FLASH OR PROTRUSION. INTERLEAD FLASH OR  
PROTRUSION SHALL NOT EXCEED  
0.25 (0.010) PER SIDE.  
16X KREF  
M
S
S
0.10 (0.004)  
T
U
V
S
0.15 (0.006) T U  
K
K1  
16  
9
2X L/2  
J1  
5. DIMENSION K DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN  
EXCESS OF THE K DIMENSION AT MAXIMUM  
MATERIAL CONDITION.  
B
−U−  
SECTION N−N  
L
J
PIN 1  
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
7. DIMENSION A AND B ARE TO BE DETERMINED  
AT DATUM PLANE −W−.  
IDENT.  
8
1
N
0.25 (0.010)  
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN  
MAX  
0.200  
0.177  
0.047  
0.006  
0.030  
S
0.15 (0.006) T U  
A
M
A
B
4.90  
4.30  
−−−  
5.10 0.193  
4.50 0.169  
−V−  
C
1.20  
−−−  
D
0.05  
0.50  
0.15 0.002  
0.75 0.020  
N
F
F
G
H
0.65 BSC  
0.026 BSC  
0.18  
0.09  
0.09  
0.19  
0.19  
0.28 0.007  
0.20 0.004  
0.16 0.004  
0.30 0.007  
0.25 0.007  
0.011  
0.008  
0.006  
0.012  
0.010  
J
DETAIL E  
J1  
K
K1  
L
6.40 BSC  
0.252 BSC  
0
−W−  
M
0
8
8
_
_
_
_
C
0.10 (0.004)  
DETAIL E  
H
SEATING  
PLANE  
−T−  
D
G
http://onsemi.com  
6
MC74LCX257  
PACKAGE DIMENSIONS  
SOEIAJ−16  
M SUFFIX  
CASE 966−01  
ISSUE O  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
16  
9
L
E
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
FLASH OR PROTRUSIONS AND ARE MEASURED  
AT THE PARTING LINE. MOLD FLASH OR  
PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006)  
PER SIDE.  
Q
1
H
E
M
_
E
4. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
1
8
L
5. THE LEAD WIDTH DIMENSION (b) DOES NOT  
INCLUDE DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)  
TOTAL IN EXCESS OF THE LEAD WIDTH  
DIMENSION AT MAXIMUM MATERIAL CONDITION.  
DAMBAR CANNOT BE LOCATED ON THE LOWER  
RADIUS OR THE FOOT. MINIMUM SPACE  
BETWEEN PROTRUSIONS AND ADJACENT LEAD  
TO BE 0.46 ( 0.018).  
DETAIL P  
Z
D
VIEW P  
e
A
c
MILLIMETERS  
INCHES  
MIN  
−−−  
DIM MIN  
MAX  
MAX  
0.081  
0.008  
0.020  
0.011  
0.413  
0.215  
A
−−−  
0.05  
0.35  
0.18  
9.90  
5.10  
2.05  
A
A
1
0.20 0.002  
0.50 0.014  
0.27 0.007  
1
b
0.13 (0.005)  
b
c
0.10 (0.004)  
M
D
E
10.50 0.390  
5.45 0.201  
e
1.27 BSC  
0.050 BSC  
H
7.40  
0.50  
1.10  
8.20 0.291  
0.85 0.020  
1.50 0.043  
0.323  
0.033  
0.059  
E
L
L
E
0
10  
0.90 0.028  
10  
_
0.035  
0.031  
M
Q
0
_
_
_
0.70  
−−−  
1
Z
0.78  
−−−  
http://onsemi.com  
7
MC74LCX257  
ON Semiconductor and  
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MC74LCX257/D  

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