MC74LVXU04DTR2G [ONSEMI]

Hex Inverter;
MC74LVXU04DTR2G
型号: MC74LVXU04DTR2G
厂家: ONSEMI    ONSEMI
描述:

Hex Inverter

栅 光电二极管 逻辑集成电路 触发器
文件: 总6页 (文件大小:106K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MC74LVXU04  
Hex Inverter  
(Unbuffered)  
The MC74LVX04 is an advanced high speed CMOS unbuffered hex  
inverter. The inputs tolerate voltages up to 7.0 V, allowing the  
interface of 5.0 V systems to 3.0 V systems.  
http://onsemi.com  
Features  
High Speed: t = 4.1 ns (Typ) at V = 3.3 V  
PD  
CC  
Low Power Dissipation: I = 2 mA (Max) at T = 25°C  
CC  
A
SOIC−14 NB  
D SUFFIX  
CASE 751A  
TSSOP−14  
DT SUFFIX  
CASE 948G  
Power Down Protection Provided on Inputs  
Balanced Propagation Delays  
Low Noise: V  
= 0.5 V (Max)  
OLP  
PIN ASSIGNMENT  
Pin and Function Compatible with Other Standard Logic Families  
These Devices are Pb−Free and are RoHS Compliant  
V
A5 O5 A4 O4 A3 O3  
13 12 11 10 9 8  
CC  
14  
1
2
A0  
A1  
A2  
A3  
A4  
A5  
O0  
O1  
O2  
O3  
O4  
O5  
3
4
5
6
1
2
3
4
5
6
7
A0 O0 A1 O1 A2 O2 GND  
9
8
14−Lead (Top View)  
11  
13  
10  
12  
MARKING DIAGRAMS  
14  
LVXU04G  
AWLYWW  
Figure 1. Logic Diagram  
1
PIN NAMES  
Pins  
SOIC−14 NB  
Function  
14  
An  
On  
Data Inputs  
Outputs  
LVX  
U04  
ALYWG  
G
FUNCTION TABLE  
An  
1
TSSOP−14  
On  
L
H
H
L
LVXU04  
A
WL, L  
Y
= Specific Device Code  
= Assembly Location  
= Wafer Lot  
= Year  
WW, W  
G or G  
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
August, 2014 − Rev. 4  
MC74LVXU04/D  
MC74LVXU04  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
CC  
DC Supply Voltage  
−0.5 to +7.0  
−0.5 to +7.0  
V
IN  
DC Input Voltage  
V
V
OUT  
DC Output Voltage  
−0.5 to V + 0.5  
V
CC  
I
DC Input Diode Current  
DC Output Diode Current  
DC Output Sink Current  
DC Supply Current per Supply Pin  
Storage Temperature Range  
V < GND  
−20  
20  
mA  
mA  
mA  
mA  
_C  
IK  
I
I
V
< GND  
O
OK  
I
25  
OUT  
I
50  
CC  
T
−65 to +150  
260  
STG  
T
Lead Temperature, 1 mm from Case for 10 Seconds  
Junction Temperature under Bias  
Thermal Resistance  
_C  
L
T
+150  
250  
_C  
_C/W  
J
q
SOIC  
TSSOP  
JA  
P
D
Power Dissipation in Still Air at 85_C  
SOIC  
TSSOP  
250  
mW  
MSL  
Moisture Sensitivity  
Flammability Rating  
ESD Withstand Voltage  
Level 1  
F
R
Oxygen Index: 30% − 35%  
UL 94−V0 @ 0.125 in  
V
ESD  
Human Body Model (Note 1)  
Machine Model (Note 2)  
> 2000  
> 200  
2000  
V
Charged Device Model (Note 3)  
I
Latchup Performance  
Above V and Below GND at 85_C (Note 4)  
300  
mA  
Latchup  
CC  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Tested to EIA/JESD22−A114−A.  
2. Tested to EIA/JESD22−A115−A.  
3. Tested to JESD22−C101−A.  
4. Tested to EIA/JESD78.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
2.0  
0
Max  
3.6  
Unit  
V
V
CC  
Supply Voltage  
V
I
Input Voltage  
(Note 5)  
5.5  
V
V
O
Output Voltage  
(HIGH or LOW State)  
0
V
CC  
V
T
Operating Free−Air Temperature  
Input Transition Rise or Fall Rate  
−40  
0
+85  
100  
_C  
ns/V  
A
Dt/DV  
V
CC  
= 3.0 V 0.3 V  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
5. Unused inputs may not be left open. All inputs must be tied to a high− or low−logic input voltage level.  
http://onsemi.com  
2
 
MC74LVXU04  
DC ELECTRICAL CHARACTERISTICS  
T
A
= 25°C  
T = −40 to 85°C  
A
V
CC  
V
Min  
Typ  
Max  
Min  
Max  
Symbol  
Parameter  
Test Conditions  
Unit  
V
IH  
High−Level Input Voltage  
2.0  
3.0  
3.6  
1.5  
2.0  
2.4  
1.5  
2.0  
2.4  
V
V
Low−Level Input Voltage  
2.0  
3.0  
3.6  
0.5  
0.8  
0.8  
0.5  
0.8  
0.8  
V
V
V
IL  
V
OH  
High−Level Output Voltage  
(V = V or V )  
I
I
I
= −50 mA  
= −50 mA  
= −4 mA  
2.0  
3.0  
3.0  
1.9  
2.9  
2.58  
2.0  
3.0  
1.9  
2.9  
2.48  
OH  
OH  
OH  
in  
IH  
IL  
V
OL  
Low−Level Output Voltage  
(V = V or V )  
I
OL  
I
OL  
I
OL  
= 50 mA  
= 50 mA  
= 4 mA  
2.0  
3.0  
3.0  
0.0  
0.0  
0.1  
0.1  
0.36  
0.1  
0.1  
0.44  
in  
IH  
IL  
I
Input Leakage Current  
V
V
= 5.5 V or GND  
3.6  
3.6  
0.1  
2.0  
1.0  
mA  
mA  
in  
in  
I
Quiescent Supply Current  
= V or GND  
20.0  
CC  
in  
CC  
AC ELECTRICAL CHARACTERISTICS (Input t = t = 3.0ns)  
r
f
T
A
= 25°C  
T = −40 to 85°C  
A
Min  
Typ  
Max  
Min  
Max  
Symbol  
Parameter  
Test Conditions  
Unit  
Propagation Delay, Input to  
Output  
t
t
,
V
V
= 2.7V  
C = 15 pF  
C = 50 pF  
L
5.4  
7.9  
10.1  
13.6  
1.0  
1.0  
12.5  
16.0  
ns  
PLH  
CC  
L
PHL  
= 3.3 0.3V C = 15 pF  
4.1  
6.6  
6.2  
9.7  
1.0  
1.0  
7.5  
11.0  
CC  
L
C = 50 pF  
L
t
t
Output−to−Output Skew  
(Note 6)  
V
CC  
V
CC  
= 2.7V  
= 3.3 0.3V C = 50 pF  
C = 50 pF  
1.5  
1.5  
1.5  
1.5  
ns  
OSHL  
OSLH  
L
L
6. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.  
The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (t  
) or LOW−to−HIGH (t  
); parameter  
OSHL  
OSLH  
guaranteed by design.  
CAPACITIVE CHARACTERISTICS  
T
A
= 25°C  
T = −40 to 85°C  
A
Min  
Typ  
4
Max  
Min  
Max  
Symbol  
Parameter  
Unit  
pF  
Cin  
Input Capacitance  
Power Dissipation Capacitance (Note 7)  
10  
10  
C
18  
pF  
PD  
7. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.  
PD  
Average operating current can be obtained by the equation: I  
no−load dynamic power consumption; P = C V  
) = C V f + I /6 (per buffer). C is used to determine the  
CC(OPR  
PD CC in CC PD  
2
f + I V  
.
D
PD  
CC  
in  
CC  
CC  
NOISE CHARACTERISTICS (Input t = t = 3.0 ns, C = 50 pF, V = 3.3 V, Measured in SOIC Package)  
r
f
L
CC  
T
A
= 25°C  
Typ  
0.3  
Max  
Symbol  
Characteristic  
Unit  
V
V
Quiet Output Maximum Dynamic V  
0.5  
−0.5  
2.0  
OLP  
OLV  
OL  
V
Quiet Output Minimum Dynamic V  
−0.3  
V
OL  
V
IHD  
Minimum High Level Dynamic Input Voltage  
Maximum Low Level Dynamic Input Voltage  
V
V
ILD  
0.8  
V
http://onsemi.com  
3
 
MC74LVXU04  
TEST POINT  
V
CC  
A
OUTPUT  
50%  
DEVICE  
UNDER  
TEST  
GND  
t
t
PHL  
PLH  
C *  
L
O
50% V  
CC  
*Includes all probe and jig capacitance  
Figure 2. Switching Waveforms  
Figure 3. Test Circuit  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MC74LVXU04DG  
SOIC−14 NB  
(Pb−Free)  
55 Units / Rail  
2500 Tape & Reel  
96 Units / Rail  
MC74LVXU04DR2G  
MC74LVXU04DTG  
MC74LVXU04DTR2G  
SOIC−14 NB  
(Pb−Free)  
TSSOP−14  
(Pb−Free)  
TSSOP−14  
(Pb−Free)  
2500 Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
4
MC74LVXU04  
PACKAGE DIMENSIONS  
TSSOP−14  
CASE 948G  
ISSUE B  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
14X K REF  
M
S
S
V
ANSI Y14.5M, 1982.  
0.10 (0.004)  
T
U
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN  
EXCESS OF THE K DIMENSION AT MAXIMUM  
MATERIAL CONDITION.  
S
0.15 (0.006) T  
U
N
0.25 (0.010)  
14  
8
2X L/2  
M
B
L
N
−U−  
PIN 1  
IDENT.  
F
7
1
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
DETAIL E  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE −W−.  
S
K
0.15 (0.006) T  
U
A
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
K1  
−V−  
A
B
C
D
F
4.90  
4.30  
−−−  
0.05  
0.50  
5.10 0.193 0.200  
4.50 0.169 0.177  
J J1  
1.20  
−−− 0.047  
0.15 0.002 0.006  
0.75 0.020 0.030  
SECTION N−N  
G
H
J
J1  
K
0.65 BSC  
0.026 BSC  
0.60 0.020 0.024  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
0.50  
0.09  
0.09  
0.19  
−W−  
C
K1 0.19  
L
M
6.40 BSC  
0.252 BSC  
0.10 (0.004)  
0
8
0
8
_
_
_
_
SEATING  
PLANE  
−T−  
H
G
DETAIL E  
D
SOLDERING FOOTPRINT*  
7.06  
1
0.65  
PITCH  
14X  
0.36  
14X  
1.26  
DIMENSIONS: MILLIMETERS  
For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
5
MC74LVXU04  
PACKAGE DIMENSIONS  
SOIC−14 NB  
CASE 751A−03  
ISSUE K  
NOTES:  
D
A
B
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION  
SHALL BE 0.13 TOTAL IN EXCESS OF AT  
MAXIMUM MATERIAL CONDITION.  
4. DIMENSIONS D AND E DO NOT INCLUDE  
MOLD PROTRUSIONS.  
14  
8
7
A3  
E
H
5. MAXIMUM MOLD PROTRUSION 0.15 PER  
SIDE.  
L
DETAIL A  
1
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
13X b  
M
M
B
0.25  
A
A1  
A3  
b
D
E
1.35  
0.10  
0.19  
0.35  
8.55  
3.80  
1.75 0.054 0.068  
0.25 0.004 0.010  
0.25 0.008 0.010  
0.49 0.014 0.019  
8.75 0.337 0.344  
4.00 0.150 0.157  
M
S
S
0.25  
C
A
B
DETAIL A  
h
X 45  
A
_
e
H
h
L
1.27 BSC  
0.050 BSC  
6.20 0.228 0.244  
0.50 0.010 0.019  
1.25 0.016 0.049  
5.80  
0.25  
0.40  
0
M
A1  
e
M
7
0
7
_
_
_
_
SEATING  
PLANE  
C
SOLDERING FOOTPRINT*  
6.50  
14X  
1.18  
1
1.27  
PITCH  
14X  
0.58  
DIMENSIONS: MILLIMETERS  
For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and the  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.  
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed  
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation  
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and  
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets  
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each  
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,  
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which  
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or  
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable  
copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
MC74LVXU04/D  

相关型号:

MC74LVXU04M

Hex Inverter(Unbuffered)
ONSEMI

MC74LVXU04MEL

Hex Inverter(Unbuffered)
ONSEMI

MC74LVXU04MELG

Hex Inverter(Unbuffered)
ONSEMI

MC74LVXU04MG

Hex Inverter(Unbuffered)
ONSEMI

MC74LVXU04_14

Hex Inverter
ONSEMI

MC74VCX162240DT

ALVC/VCX/A SERIES, QUAD 4-BIT DRIVER, INVERTED OUTPUT, PDSO48, PLASTIC, TSSOP-48
MOTOROLA

MC74VCX162244

LOW-VOLTAGE 1.8/2.5/3.3V 16-BIT BUFFER WITH 26ohm SERIES RESISTORS
MOTOROLA

MC74VCX162244DT

LOW-VOLTAGE 1.8/2.5/3.3V 16-BIT BUFFER WITH 26ohm SERIES RESISTORS
MOTOROLA

MC74VCX162245DT

ALVC/VCX/A SERIES, DUAL 8-BIT TRANSCEIVER, TRUE OUTPUT, PDSO48, PLASTIC, TSSOP-48
MOTOROLA

MC74VCX162373DT

Bus Driver, ALVC/VCX/A Series, 2-Func, 8-Bit, True Output, CMOS, PDSO48, PLASTIC, TSSOP-48
MOTOROLA

MC74VCX16240DT

ALVC/VCX/A SERIES, QUAD 4-BIT DRIVER, INVERTED OUTPUT, PDSO48, PLASTIC, TSSOP-48
MOTOROLA

MC74VCX16244

LOW-VOLTAGE 1.8/2.5/3.3V 16-BIT BUFFER
MOTOROLA