MCH3478 [ONSEMI]
N-Channel Power MOSFET;
| 型号： | MCH3478 |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET |
| 文件： | 总5页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1353B
MCH3478
N-Channel Power MOSFET
http://onsemi.com
Ω
30V, 2A, 165m , Single MCPH3
Features
•
•
•
•
•
Low ON-resistance
1.8V drive
Protection diode in
Ultrahigh speed switching
Halogen free compliance
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
V
30
DSS
GSS
±12
V
I
I
I
2
A
D
Drain Current (PW≤10s)
Drain Current (Pulse)
Duty cycle 1%
2.5
A
≤
D
PW≤10μs, duty cycle 1%
8
0.8
A
≤
DP
When mounted on ceramic substrate (900mm2 0.8mm)
W
W
°C
°C
×
Allowable Power Dissipation
P
D
When mounted on ceramic substrate (900mm2 0.8mm), PW=10s
1.2
×
Channel Temperature
Storage Temperature
Tch
150
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: MCPH3
7019A-003
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
MCH3478-TL-H
MCH3478-TL-W
0.15
2.0
Packing Type : TL
Marking
3
FK
0 to 0.02
TL
1
2
0.65
0.3
Electrical Connection
3
1 : Gate
2 : Source
3 : Drain
1
MCPH3
2
Semiconductor Components Industries, LLC, 2013
December, 2013
D1113 TKIM TC-00003076/60612TKIM/21809PE MSIM TC-00001860 No. A1353-1/5
MCH3478
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V
I
I
=1mA, V =0V
30
(BR)DSS
D
GS
V
V
V
V
I
=30V, V =0V
GS
1
A
A
μ
DSS
GSS
DS
GS
DS
DS
I
=±8V, V =0V
DS
±10
1.3
μ
V
(off)
|
=10V, I =1mA
D
0.4
1.2
V
GS
yfs
Forward Transfer Admittance
=10V, I =1A
D
2.0
125
165
250
130
21
S
|
R
R
R
(on)1
(on)2
(on)3
=1A, V =4.5V
GS
165
235
375
m
Ω
Ω
Ω
DS
DS
DS
D
Static Drain to Source On-State Resistance
I
I
=0.5A, V =2.5V
GS
m
m
D
D
=0.3A, V =1.8V
GS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
pF
Coss
Crss
V
=10V, f=1MHz
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
14
t (on)
d
4.4
t
8.7
r
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
t (off)
d
16
t
12
f
Total Gate Charge
Qg
1.7
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=10V, V =4.5V, I =2A
GS
0.25
0.38
0.85
DS
D
V
I =2A, V =0V
GS
1.2
SD
S
Switching Time Test Circuit
V
=15V
DD
V
IN
4.5V
0V
I
=1A
D
R =15Ω
L
V
V
D
IN
OUT
PW=10μs
D.C.≤1%
G
P. G
50Ω
MCH3478
S
Ordering Information
Device
MCH3478-TL-H
MCH3478-TL-W
Package
MCPH3
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1353-2/5
MCH3478
I
D
-- V
I
-- V
D GS
DS
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
=10V
DS
1.5V
V
=1.2V
GS
0.2
0
0.2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
IT14138
Drain to Source Voltage, V
-- V
IT14137
Gate to Source Voltage, V
-- V
GS
DS
R
(on) -- V
R
(on) -- Ta
DS
DS
GS
450
400
350
300
250
200
150
100
450
400
350
300
250
200
150
100
Ta=25°C
I
=0.3A
D
0.5A
1A
50
0
50
0
0
1
2
3
4
5
6
7
8
9
10
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate to Source Voltage, V
-- V
IT14139
Ambient Temperature, Ta -- °C
IT14140
GS
| yfs | -- I
I
-- V
SD
D
S
5
5
V
=0V
V
=10V
GS
DS
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
3
2
7
5
3
2
0.1
7
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
IT14142
2
3
5
7
2
3
5
7
1.0
2
3
0.01
0.1
Drain Current, I -- A
Diode Forward Voltage, V -- V
SD
IT14141
D
SW Time -- I
D
Ciss, Coss, Crss -- V
DS
7
7
5
V
V
=15V
=4.5V
f=1MHz
DD
GS
5
3
2
3
2
Ciss
100
7
5
10
3
2
7
5
t (on)
d
10
3
2
7
5
0
5
10
15
20
25
30
IT14144
2
3
5
7
2
3
5
7
0.1
1.0
10
Drain Current, I -- A
IT14143
Drain to Source Voltage, V
-- V
D
DS
No. A1353-3/5
MCH3478
V
-- Qg
S O A
GS
2
4.5
4.0
3.5
V
=10V
DS
I
=8A
PW≤10μs
10
7
5
DP
I =2A
D
I =2.5A(PW=10s)
D
3
2
3.0
2.5
2.0
1.5
1.0
I =2A(DC)
D
1.0
7
5
3
2
Operation in this area
is limited by R (on).
0.1
7
5
DS
Ta=25°C
3
2
Single pulse
0.5
0
When mounted on ceramic substrate
(900mm2×0.8mm)
0.01
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2
3
5
7
2
3
5
7
2
3
5
7
10
2
3
5
0.1
1.0
Total Gate Charge, Qg -- nC
IT14145
Drain to Source Voltage, V
-- V
IT14146
DS
P
-- Ta
D
1.4
1.2
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2×0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT14147
No. A1353-4/5
MCH3478
Outline Drawing
Land Pattern Example
MCH3478-TL-H, MCH3478-TL-W
Mass (g) Unit
Unit: mm
0.007
mm
* For reference
0.4
0.65 0.65
Note on usage : Since the MCH3478 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1353-5/5
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