MCH4013-TL-E [ONSEMI]
RF SMALL SIGNAL TRANSISTOR;
| 型号： | MCH4013-TL-E |
| 厂家： | 
ONSEMI |
| 描述： | RF SMALL SIGNAL TRANSISTOR |
| 文件： | 总6页 (文件大小：446K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1268A
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Transistor
UHF to X Band Low-Noise Amplifier
and OSC Applications
MCH4013
Features
•
High cut-off frequency : f =22.5GHz typ (V =3V)
CE
T
•
•
Low operating voltage
High gain
2
|
|
: S21e =16dB typ (f=2GHz)
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
10
3.5
2.5
15
CBO
V
V
CEO
V
V
EBO
I
C
mA
mW
°C
Collector Dissipation
P
50
C
Junction Temperature
Storage Temperature
Tj
150
Tstg
--55 to +150
°C
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: MCPH4
7020A-002
• JEITA, JEDEC
: SC-82, SC-82AB, SOT-343
• Minimum Packing Quantity : 3,000 pcs./reel
MCH4013-TL-E
2.0
0.15
Packing Type : TL
Marking
4
3
2
0 to 0.02
GH
TL
1
0.65
0.3
Electrical Connection
1
1 : Collector
2 : Emitter
3 : Base
1
2
3
3
4 : Emitter
2, 4
SANYO : MCPH4
4
http://www.sanyosemi.com/en/network/
91212 TKIM/80608AB TIIM TC-00001509 No. A1268-1/6
MCH4013
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
1.0
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
=5V, I =0A
A
A
μ
μ
CBO
CB E
I
V
=1V, I =0A
1.0
EBO
EB C
h
V
CE
=1V, I =5mA
70
17
150
FE
C
Gain-Bandwidth Product
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
f
T
V
=3V, I =10mA
22.5
0.06
16
GHz
pF
CE C
V
CB
=1V, f=1MHz
Cre
S21e 2
V
CE
=3V, I =10mA, f=2GHz
C
12
dB
|
|
NF
V
CE
=1V, I =2mA, f=2GHz
1.5
2.0
dB
C
Notre) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
Ordering Information
Device
Package
MCPH4
Shipping
memo
MCH4013-TL-E
3,000pcs./reel
Pb Free
I
C
-- V
BE
I
C
-- V
CE
15
12
9
15
12
9
6
6
3
0
3
I =0μA
B
0
0
0
1
2
3
0.2
0.4
0.6
0.8
1.0
1.2
IT13877
Collector-to-Emitter Voltage, V
CE
-- V IT13876
Base-to-Emitter Voltage, V
-- V
BE
h
-- I
Cre -- V
CB
FE
C
3
2
2
f=1MHz
0.1
7
5
100
7
5
3
2
3
1.0
2
3
5
7
2
3
2
3
5
7
2
3
5
7
10
0.1
1.0
10
IT13897
Collector Current, I -- mA
IT13878
Collector-to-Base Voltage, V
CB
-- V
C
No. A1268-2/6
MCH4013
⏐S21e⏐2 -- I
f
-- I
T
C
C
7
5
20
18
16
14
12
f=2GHz
f=2GHz
3
2
10
10
8
7
5
2
3
5
7
2
3
2
3
5
7
2
3
1.0
10
1.0
10
Collector Current, I -- mA
IT13880
Collector Current, I -- mA
IT13881
C
C
NF -- I
P
-- Ta
C
C
4.0
3.5
3.0
2.5
2.0
1.5
60
V
=1V
CE
f=2GHz
50
40
30
20
Z
=Zsopt
S
10
0
1.0
0.5
0
25
50
75
100
125
150
175
IT13883
2
3
5
7
2
3
1.0
10
Collector Current, I -- mA
IT13898
Ambient Temperature, Ta -- °C
C
No. A1268-3/6
MCH4013
Embossed Taping Specification
MCH4013-TL-E
No. A1268-4/6
MCH4013
Outline Drawing
Land Pattern Example
MCH4013-TL-E
Mass (g) Unit
Unit: mm
0.008
mm
* For reference
0.4
1.3
No. A1268-5/6
MCH4013
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
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the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
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mentioned above.
This catalog provides information as of September, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1268-6/6
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