MCH5839 [ONSEMI]
Single P-Channel Power MOSFET;
| 型号： | MCH5839 |
| 厂家： | 
ONSEMI |
| 描述： | Single P-Channel Power MOSFET |
| 文件： | 总6页 (文件大小：675K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCH5839
Power MOSFET
–20V, 266mΩ, –1.5A, Single P-Channel
with Schottky Diode
MCH5839 is a P-Channel Power MOSFET, with Schottky Diode for
general-purpose switching device applications.
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Features
Composite type with a P-Channel silicon MOSFET and a schottky
barrier diode contained in one package facilitating high-density
mounting
MOSFET
V
R
DS
(on) Max
I
Max
D
DSS
Pb-Free, Halogen Free and RoHS compliance
266mΩ@ 4.5V
413mΩ@ 2.5V
645mΩ@ 1.8V
[MOSFET]
Low On-resistance
20V
1.5A
ESD Diode-Protected Gate
1.8V drive
[SBD]
Short reverse recovery time
Low forward voltage
SCHOTTKY DIODE
V
V
Max
I
RRM
F
FSM
3A
0.46V
15V
Typical Applications
DC/DC Converter
ELECTRICAL CONNECTION
P-Channel
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
5
4
Parameter
Symbol
Value
Unit
1:Gate
[MOSFET]
2 :Source
3:Anode
4:Cathode
5:Drain
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
V
V
20
10
V
V
A
DSS
GSS
I
1.5
D
1
2
3
Drain Current (Pulse)
I
6
A
DP
PW 10s, duty cycle 1%
Power Dissipation
PACKING TYPE : TL
MARKING
When mounted on ceramic substrate
(1000mm2 0.8mm) 1unit
P
0.8
W
D
YD
Junction Temperature
Storage Temperature
Tj
150
C
C
Tstg
55 to +125
TL
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
V
V
15
15
1
V
V
A
RRM
RSM
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
I
O
Surge Forward Current
50Hz sine wave, 1cycle
A
I
3
FSM
Junction Temperature
Storage Temperature
Tj
55 to +125
55 to +125
C
C
Tstg
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
Symbol
Value
Unit
R
JA
156.2
C/W
When mounted on ceramic substrate
(1000mm2 0.8mm) 1unit
© Semiconductor Components Industries, LLC, 2015
August 2015 - Rev. 1
1
Publication Order Number :
MCH5839/D
MCH5839
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2)
Parameter Symbol
Value
typ
Conditions
Unit
min
max
[MOSFET]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
V(
)
I =1mA, V =0V
GS
20
V
A
A
V
BR DSS
D
I
I
V
=20V, V =0V
GS
1
DSS
GSS
DS
GS
DS
DS
V
V
V
=8V, V =0V
DS
10
V
(th)
=10V, I =1mA
0.4
1.4
GS
D
Forward Transconductance
g
=10V, I =750mA
1.9
205
295
430
120
26
S
FS
D
R
DS
R
DS
R
DS
(on)1
(on)2
(on)3
I =750mA, V =4.5V
D GS
266
413
645
m
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Static Drain to Source On-State
Resistance
I =300mA, V =2.5V
D GS
I =100mA, V =1.8V
D
GS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
Coss
Crss
V
=10V, f=1MHz
DS
20
t (on)
d
5.3
t
9.7
r
See specified Test Circuit
Turn-OFF Delay Time
Fall Time
t (off)
d
16
t
14
f
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
[SBD]
Qg
1.7
Qgs
Qgd
V
=10V, V =4.5V, I =1.5A
GS
0.28
0.47
0.89
DS
D
V
I =1.5A, V =0V
S GS
1.2
SD
Reverse Voltage
V
V
I =0.5mA
15
V
V
R
F
R
Forward Voltage
I =0.5A
F
0.4
13
0.46
90
Reverse Current
I
V =6V
R
A
pF
ns
R
Interterminal Capacitance
Reverse Recovery Time
C
V =10V, f=1MHz
R
t
rr
I =I =100mA, See specified Test Circuit
F R
10
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
t Test Circuit
rr
(MOSFET)
(SBD)
Duty≤10%
V = --10V
DD
V
IN
0V
--4.5V
I = --750mA
D
V
IN
50
100
10
R =13.3
L
D
V
OUT
10s
PW=10s
D.C.≤1%
--5V
G
t
rr
MCH5839
P.G
50
S
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MCH5839
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MCH5839
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MCH5839
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5
MCH5839
PACKAGE DIMENSIONS
unit : mm
SC-88AFL / MCPH5
CASE 419AP
ISSUE O
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
Recommended
Soldering Footprint
0.4
0.65 0.65
ORDERING INFORMATION
Device
Marking
YD
Package
Shipping (Qty / Packing)
3,000 / Tape & Reel
MCH5839-TL-H
MCH5839-TL-W
SC-88AFL / MCPH5
(Pb-Free / Halogen Free)
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the MCH5839 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
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