MCH6321 [ONSEMI]
P-Channel Power MOSFET;
ONSEMI 
Ordering number : ENA0963B
MCH6321
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
20V, 4A, 83m , Single MCPH6
Features
•
1.8V drive
•
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--20
Unit
V
V
V
DSS
GSS
±10
V
I
I
--4
A
D
Drain Current (Pulse)
PW 10 s, duty cycle 1%
--16
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
When mounted on ceramic substrate (1200mm2 0.8mm)
1.5
W
°C
°C
×
D
Tch
150
Tstg
--55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: MCPH6
7022A-009
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
2.0
0.15
MCH6321-TL-E
MCH6321-TL-W
Packing Type : TL
Marking
6
5
4
3
0 to 0.02
JV
TL
1
2
0.65
0.3
Electrical Connection
1, 2, 5, 6
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
1
2
3
4
3
MCPH6
6
5
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
32514HK TC-00002975/62012TKIM/N1407TIIM PE No. A0963-1/5
MCH6321
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
--20
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
I =-- 1mA, V =0V
D GS
(BR)DSS
V
V
V
V
I
=-- 20V, V =0V
GS
--1
A
A
μ
DSS
GSS
DS
GS
DS
DS
I
=±8V, V =0V
DS
±10
μ
V
(off)
|
=-- 10V, I =-- 1mA
D
--0.4
2.5
--1.3
V
GS
yfs
Forward Transfer Admittance
=-- 10V, I =-- 2A
D
4.3
63
S
|
R
R
R
(on)1
DS
(on)2
DS
(on)3
DS
=-- 2A, V =-- 4.5V
GS
83
125
200
m
Ω
Ω
Ω
D
Static Drain-to-Source On-State Resistance
I
D
I
D
=-- 1A, V =-- 2.5V
GS
88
m
m
=-- 0.2A, V =-- 1.8V
GS
130
375
77
Input Capacitance
Ciss
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
DS
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
58
t (on)
d
8.1
31
t
r
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
t (off)
d
40
t
39
f
Total Gate Charge
Qg
4.6
0.8
1.3
--0.86
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=-- 10V, V =-- 4.5V, I =-- 4A
DS GS
D
V
I =-- 4A, V =0V
GS
--1.2
SD
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V
= --10V
V
DD
IN
0V
--4V
I
= --2A
D
V
IN
R =5Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
MCH6321
P. G
50Ω
S
Ordering Information
Device
Package
MCPH6
Shipping
memo
Pb-Free
MCH6321-TL-E
3,000pcs./reel
MCH6321-TL-W
Pb-Free and Halogen Free
No. A0963-2/5
MCH6321
I
-- V
I
-- V
D GS
D
DS
--3.0
--2.5
--2.0
--1.5
--1.0
--5
--4
--3
--2
V
= --10V
DS
--1
0
--0.5
0
V
= --1.0V
GS
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
IT13009
Drain-to-Source Voltage, V
-- V
IT13008
Gate-to-Source Voltage, V
-- V
GS
DS
R
(on) -- V
R
DS
(on) -- Ta
DS
GS
300
250
200
150
100
250
200
150
100
Ta=25°C
I
= --0.2A
D
--1.0A
--2.0A
50
0
50
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--60 --40 --20
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
Gate-to-Source Voltage, V
-- V
IT13026
IT13027
GS
| yfs | -- I
I
-- V
D
S
SD
--10
7
5
10
7
V
= --10V
V
=0V
DS
GS
3
2
5
--1.0
7
5
3
2
3
2
--0.1
7
5
1.0
7
3
2
5
--0.01
3
2
7
5
3
2
0.1
--0.001
2
3
5
7
2
3
5
7
2
3
5
7
--10
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT13013
--0.01
--0.1
--1.0
Drain Current, I -- A
D
IT13012
Diode Forward Voltage, V -- V
SD
Ciss, Coss, Crss -- V
SW Time -- I
DS
D
2
1000
V
V
= --10V
= --4V
f=1MHz
DD
GS
7
5
100
Ciss
7
5
3
2
3
2
100
7
5
10
t (on)
d
3
2
7
5
--0.1
2
3
5
7
2
3
5
7
0
--2
--4
--6
--8
--10 --12 --14 --16 --18 --20
IT13015
--1.0
--10
Drain Current, I -- A
IT13014
Drain-to-Source Voltage, V
-- V
D
DS
No. A0963-3/5
MCH6321
V
-- Qg
A S O
GS
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
3
2
V
= --10V
I
= --16A
PW≤10µs
DS
DP
I = --4A
D
--10
7
I = --4A
D
5
3
2
--1.0
7
5
3
2
Operation in this area
is limited by R (on).
DS
--0.1
7
5
Ta=25°C
3
2
--0.5
0
Single pulse
Mounted on a ceramic board (1200mm2×0.8mm)
--0.01
0
1
3
4
5
2
3
5
7
2
3
5
7
2
3
7
--10
2 3
IT13029
Total Ga2te Charge, Qg -- nC
Drain-to-Source Voltage, V
-- 5V
--0.01
--0.1
--1.0
IT13028
DS
P
-- Ta
D
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT13030
No. A0963-4/5
MCH6321
Outline Drawing
Land Pattern Example
MCH6321-TL-E, MCH6321-TL-W
Mass (g) Unit
Unit: mm
0.008
mm
* For reference
0.4
0.65 0.65
Note on usage : Since the MCH6321 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PS No. A0963-5/5
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