MCH6342-TL-W [ONSEMI]
Single P-Channel Power MOSFET;
| 型号： | MCH6342-TL-W |
| 厂家： | 
ONSEMI |
| 描述： | Single P-Channel Power MOSFET 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：533K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCH6342
Power MOSFET
–30V, 73mΩ, –4.5A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
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Features
• Low On-Resistance
• 1.8V drive
• High Speed Switching
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS compliance
V
R
(on) Max
I
D Max
DSS
DS
73mΩ@ −4.5V
99mΩ@ −2.5V
155mΩ@ −1.8V
−30V
−4.5A
ELECTRICAL CONNECTION
P-Channel
Typical Applications
• DC/DC Converter
1, 2, 5, 6
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Value
Unit
V
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
V
V
I
−30
10
DSS
GSS
3
V
−4.5
A
D
6 : Drain
Drain Current (Pulse)
4
I
−18
A
DP
PW ≤ 10μs, duty cycle ≤ 1%
Power Dissipation
PACKING TYPE : TL
MARKING
When mounted on ceramic substrate
(1500mm2
× 0.8mm)
P
1.5
W
D
Junction Temperature
Tj
150
°C
°C
YR
Storage Temperature
Tstg
−55 to +150
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(1500mm2
0.8mm)
Symbol
Value
Unit
R
θJA
83.3
°C/W
×
© Semiconductor Components Industries, LLC, 2015
July 2015 - Rev. 2
1
Publication Order Number :
MCH6342/D
MCH6342
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Value
typ
Parameter
Symbol
V(
Conditions
Unit
min
−30
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
)
I =−1mA, V =0V
V
μA
μA
V
BR DSS
D
GS
=−30V, V =0V
I
I
V
−1
DSS
GSS
DS
GS
DS
DS
GS
V
V
V
= 8V, V =0V
DS
10
V
(th)
=−10V, I =−1mA
−0.4
−1.3
GS
FS
D
Forward Transconductance
g
=−10V, I =−2A
3.4
5.8
56
S
D
R
DS
R
DS
R
DS
(on)1
(on)2
(on)3
I =−2A, V =−4.5V
GS
73
99
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
D
Static Drain to Source On-State
Resistance
71
I =−1A, V =−2.5V
GS
D
95
155
I =−0.3A, V =−1.8V
D
GS
Input Capacitance
Ciss
650
105
83
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=−10V, f=1MHz
DS
t (on)
d
8.2
28
t
r
See specified Test Circuit
Turn-OFF Delay Time
Fall Time
100
60
t (off)
d
t
f
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Qg
8.6
1.3
2.4
−0.83
Qgs
Qgd
V
=−15V, V =−4.5V, I =−4.5A
GS
DS
D
V
I =−4.5A, V =0V
GS
−1.2
SD
S
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V
= --15V
DD
V
IN
0V
--4.5V
I
= --2A
D
V
IN
R =7.5Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
MCH6342
P. G
50Ω
S
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2
MCH6342
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3
MCH6342
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4
MCH6342
PACKAGE DIMENSIONS
unit : mm
SC-88FL / MCPH6
CASE 419AS
ISSUE O
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Recommended
Soldering Footprint
0.4
0.65 0.65
ORDERING INFORMATION
Device
Marking
YR
Package
Shipping (Qty / Packing)
MCH6342-TL-H
MCH6342-TL-W
SC-88FL / MCPH6
(Pb-Free / Halogen Free)
3,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the MCH6342 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
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