MCH6604-TL-E [ONSEMI]
N-Channel Power MOSFET, 50V, 0.25A, 7.8 Ohm, Dual MCPH6;
| 型号： | MCH6604-TL-E |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET, 50V, 0.25A, 7.8 Ohm, Dual MCPH6 |
| 文件： | 总6页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN6459C
MCH6604
N-Channel Power MOSFET
http://onsemi.com
Ω
50V, 0.25A, 7.8 , Dual MCPH6
Features
•
Low ON-resistance
•
Ultrahigh-speed switching
•
1.5V drive
•
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
50
±10
0.25
1
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
P
When mounted on ceramic substrate (900mm2 0.8mm)1unit
0.8
W
°C
°C
×
D
Tch
150
Tstg
--55 to +150
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: MCPH6
7022A-006
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
2.0
0.15
MCH6604-TL-E
Packing Type : TL
Marking
FD
6
5
4
3
0 to 0.02
TL
1
2
0.65
0.3
Electrical Connection
6
5
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
1
2
3
4
6 : Drain1
1
2
3
MCPH6
6
5
Semiconductor Components Industries, LLC, 2013
August, 2013
82813 TKIM TC-00002988/71112 TKIM/52506PE MSIM TB-00002287/ No.6459-1/6
60100 TS (KOTO) TA-2459
MCH6604
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
50
(BR)DSS
D
GS
I
V
=50V, V =0V
1
A
A
μ
DSS
DS GS
I
V
=±8V, V =0V
±10
1.3
μ
GSS
GS DS
V
(off)
|
V
=10V, I =100
A
μ
0.4
V
GS
yfs
DS
D
Forward Transfer Admittance
V
=10V, I =50mA
D
130
180
6
mS
Ω
|
DS
R
R
R
(on)1
(on)2
(on)3
I
=50mA, V =4V
7.8
9.9
20
DS
DS
DS
D GS
Static Drain to Source On-State Resistance
I
D
=30mA, V =2.5V
GS
7.1
10
Ω
I
D
=10mA, V =1.5V
GS
Ω
Input Capacitance
Ciss
6.6
4.7
1.7
18
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=10V, f=1MHz
DS
t
t
t
t
(on)
d
r
42
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
190
105
1.57
0.20
0.32
0.85
d
f
Total Gate Charge
Qg
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
=10V, V =10V, I =100mA
GS
D
V
SD
I =100mA, V =0V
S GS
1.2
Switching Time Test Circuit
V
=25V
DD
V
I
=50mA
L
IN
D
4V
0V
R =500Ω
V
D
OUT
V
IN
PW=10μs
D.C.≤1%
G
P.G
50Ω
MCH6604
S
Ordering Information
Device
Package
MCPH6
Shipping
3,000pcs./reel
memo
MCH6604-TL-E
Pb-Free
No.6459-2/6
MCH6604
I
-- V
I
-- V
GS
D
DS
D
0.10
0.09
0.20
0.18
0.16
0.14
V
=10V
DS
3.5V
4.0V
0.08
0.07
0.06
0.05
0.04
0.03
0.12
0.10
0.08
0.06
0.04
0.02
0.01
0
0.02
0
0
0.2
0.4
0.6
0.8
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
IT00054
Gate to Source Voltage, V
GS
-- V
IT00055
Drain to Source Voltage, V
-- V
DS
R
(on) -- I
R
(on) -- V
GS
DS
D
DS
100
12
V
=4V
Ta=25°C
GS
7
5
11
10
9
3
2
8
7
6
5
4
I =30mA
D
50mA
10
Ta=75°C
25°C
--25°C
7
5
3
2
3
2
1.0
2
2
2
3
5
7
2
3
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
IT00056
IT00057
Gate to Source Voltage, V
-- V
Drain Current, I -- A
D
R
GS
R
(on) -- I
(on) -- I
DS
D
DS
D
100
100
V
=1.5V
V
=2.5V
GS
GS
7
5
7
5
3
2
3
2
Ta=75°C
25°C
--25°C
Ta=75°C
25°C
--25°C
10
10
7
5
7
5
3
2
3
2
1.0
1.0
0.001
2
3
5
7
2
3
3
5
7
2
3
0.01
0.1
0.01
IT00058
IT00059
Drain Current, I -- A
Drain Current, I -- A
D
D
R
(on) -- Ta
| yfs | -- I
DS
D
14
1.0
V
=10V
DS
7
5
12
10
8
3
2
0.1
6
4
7
5
3
2
2
0
0.01
0.01
3
5
7
2
3
--60 --40 --20
0
20
40
60
80 100 120 140 160
0.1
IT00060
IT00061
Ambient Temperature, Ta -- °C
Drain Current, I -- A
D
No.6459-3/6
MCH6604
SW Time -- I
I
S
-- V
SD
D
1000
5
V
V
=25V
=4V
V
=0V
DD
GS
GS
7
3
2
5
3
2
t (off)
d
0.1
t
f
100
7
5
7
5
t
r
3
2
3
2
t (on)
d
0.01
0.5
10
0.01
2
3
5
7
0.6
0.7
0.8
0.9
1.0
1.1
1.2
IT00062
0.1
IT00063
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
D
Ciss, Coss, Crss -- V
V
GS
-- Qg
DS
10
100
f=1MHz
V
=10V
DS
7
9 I =100mA
D
5
8
7
6
5
4
3
2
3
2
10
Ciss
7
5
Coss
3
2
Crss
1
0
1.0
0
5
10
15
20
25
30
35
40
45
50
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
IT00064
Drain to Source Voltage, V
-- V
Total Gate Charge, Qg -- nC
IT00065
DS
A S O
P
-- Ta
D
2
1.0
0.8
0.6
I
=1A(PW≤10μs)
DP
1.0
100μs
7
5
I =0.25A
D
3
2
0.1
0.4
Operation in this
area is limited by R (on).
7
5
DS
3
2
0.2
0
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
0.01
0
20
40
60
80
100
120
140
160
2
3
5
7
2
3
5
7
1.0
10
100
IT01739
Drain to Source Voltage, V
DS
-- V
Ambient Temperature, Ta -- °C
IT01740
No.6459-4/6
MCH6604
Outline Drawing
Land Pattern Example
MCH6604-TL-E
Mass (g) Unit
Unit: mm
0.008
mm
* For reference
0.4
0.65 0.65
No.6459-5/6
MCH6604
Note on usage : Since the MCH6604 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.6459-6/6
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