MCH6663-TL-H [ONSEMI]
互补双路功率 MOSFET 30V;
| 型号： | MCH6663-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | 互补双路功率 MOSFET 30V |
| 文件： | 总7页 (文件大小：647K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCH6663
Power MOSFET
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30V, 188m
Complementary Dual
Ω
, 1.8A,
−
30V, 325m
Ω
, −1.5A,
Features
V
R
(on) Max
I
DSS
DS
D Max
1.8A
• ON-Resistance Nch : R (on)1=145mΩ (typ)
188 mΩ@ 10V
343 mΩ@ 4.5V
378 mΩ@ 4V
DS
DS
N-Ch
30V
Pch : R (on)1=250mΩ (typ)
• 4V Drive
• Complementary N-Channel and P-Channel MOSFET
• Pb-Free, Halogen Free and RoHS Compliance
325 mΩ@ −10V
555 mΩ@ −4.5V
641 mΩ@ −4V
P-Ch
−30V
−1.5A
Specifications
Absolute Maximum Ratings at Ta = 25°C
Electrical Connection
N-Channel and P-Channel
N-channel
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
P-channel
Unit
V
V
DSS
30
20
−30
20
6
5
4
V
V
GSS
I
1.8
−1.5
A
A
D
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
Drain Current (Pulse)
I
7.2
−6
DP
PW≤10μs, duty cycle≤1%
Power Dissipation
6 : Drain1
When mounted on ceramic substrate
(900mm2
×0.8mm) 1unit
P
D
0.8
W
1
2
3
150
Junction Temperature
Storage Temperature
Tj
°C
°C
−55 to +150
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Packing Type : TL
Marking
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2
0.8mm) 1unit
Symbol
Value
Unit
TL
°C/W
R
156.25
θJA
×
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 3
1
Publication Order Number :
MCH6663/D
MCH6663
Electrical Characteristics at Ta = 25°C
Value
typ
Parameter
Symbol
Conditions
Unit
min
max
[N-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
V(
)
I
=1mA, V =0V
GS
30
V
μA
μA
V
BR DSS
D
I
I
V
V
V
V
=30V, V =0V
GS
1
DSS
DS
GS
DS
DS
= 16V, V =0V
DS
10
GSS
V
GS
(th)
=10V, I =1mA
1.2
2.6
D
Forward Transconductance
g
FS
=10V, I =0.9A
1.1
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=0.9A, V =10V
GS
145
245
270
88
188
343
378
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
D
D
D
Static Drain to Source On-State Resistance
=0.5A, V =4.5V
GS
=0.5A, V =4V
GS
Input Capacitance
Ciss
Output Capacitance
Coss
Crss
V
=10V, f=1MHz
DS
19
Reverse Transfer Capacitance
Turn-ON Delay Time
11
t (on)
d
3.4
Rise Time
t
3.6
r
See specified Test Circuit
Turn-OFF Delay Time
Fall Time
t (off)
d
10.5
4.0
t
f
Total Gate Charge
Qg
2.0
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
[P-channel]
Qgs
Qgd
V
=15V, V =10V, I =1.8A
DS GS
0.33
0.29
0.86
D
V
SD
I =1.8A, V =0V
1.2
S
GS
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
V(
)
I
=−1mA, V =0V
GS
−30
V
μA
μA
V
BR DSS
D
I
I
V
V
V
V
=−30V, V =0V
GS
−1
10
DSS
DS
GS
DS
DS
= 16V, V =0V
DS
GSS
V
GS
(th)
=−10V, I =−1mA
−1.2
−2.6
D
g
FS
=−10V, I =−0.8A
1.3
250
397
458
82
S
D
R
DS
R
DS
R
DS
(on)1
(on)2
(on)3
I
I
I
=−0.8A, V =−10V
GS
325
555
641
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
D
D
D
Static Drain to Source On-State Resistance
=−0.4A, V =−4.5V
GS
=−0.4A, V =−4V
GS
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=−10V, f=1MHz
DS
22
16
t (on)
d
4.0
3.3
12
t
r
See specified Test Circuit
Turn-OFF Delay Time
Fall Time
t (off)
d
t
5.4
2.2
0.36
0.49
−0.9
f
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Qg
Qgs
Qgd
V
=−15V, V =−10V, I =−1.5A
DS GS
D
V
SD
I =−1.5A, V =0V
GS
−1.5
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
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2
MCH6663
Switching Time Test Circuit
[N-channel]
[P-channel]
V
DD
=15V
V
DD
= --15V
V
IN
V
IN
10V
0V
0V
--10V
I
=0.9A
I
= --0.8A
D
D
V
IN
V
IN
R =16.7Ω
R =18.75Ω
L
L
D
V
OUT
D
V
OUT
PW=10μs
D.C.≤1%
PW=10μs
D.C.≤1%
G
G
MCH6663
MCH6663
P.G
P.G
50Ω
50Ω
S
S
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3
MCH6663
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4
MCH6663
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5
MCH6663
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6
MCH6663
Package Dimensions
MCH6663-TL-H / MCH6663-TL-W
MCPH6
CASE 419AS
ISSUE O
unit : mm
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate 2
6 : Drain1
Recommended
Soldering Footprint
0.4
0.65 0.65
ORDERING INFORMATION
Device
Package
Shipping
3,000 pcs. / Tape & Reel
Note
MCH6663-TL-H
MCPH6
SC-88,SC-70-6,SOT-363
Pb-Free
and Halogen Free
MCH6663-TL-W
Note on usage : Since the MCH6663 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
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7
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