MCR22-6RLRP [ONSEMI]
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors; 敏感栅硅控整流器反向阻断晶闸管
| 型号： | MCR22-6RLRP |
| 厂家： | 
ONSEMI |
| 描述： | Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| 文件： | 总7页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCR22−6, MCR22−8
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed and tested for repetitive peak operation required for CD
ignition, fuel ignitors, flash circuits, motor controls and low-power
switching applications.
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Features
SCRs
1.5 AMPERES RMS
400 thru 600 VOLTS
• 150 A for 2 ms Safe Area
• High dv/dt
• Very Low Forward “On” Voltage at High Current
• Low-Cost TO-226 (TO-92)
• Pb−Free Packages are Available*
G
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
V
V
V
DRM,
RRM
(R = IK, T = *40 to +110°C, Sine Wave,
GK
J
50 to 60 Hz, Gate Open)
MCR22−6
MCR22−8
400
600
TO−92 (TO−226)
CASE 029
On-State Current RMS
(180° Conduction Angles, T = 80°C)
I
1.5
A
A
T(RMS)
C
STYLE 10
1
Peak Non-repetitive Surge Current,
I
TSM
15
@T = 25°C, (1/2 Cycle, Sine Wave, 60 Hz)
A
2
2
Circuit Fusing Considerations (t = 8.3 ms)
I t
0.9
0.5
A s
MARKING DIAGRAMS
Forward Peak Gate Power
P
W
W
A
GM
(Pulse Width ≤ 1.0 msec, T = 25°C)
A
MCR
22−x
Forward Average Gate Power
P
0.1
0.2
G(AV)
FGM
(t = 8.3 msec, T = 25°C)
AYWW G
A
G
Forward Peak Gate Current
I
(Pulse Width ≤ 1.0 ms, T = 25°C)
A
Reverse Peak Gate Voltage
V
5.0
V
RGM
(Pulse Width ≤ 1.0 ms, T = 25°C)
A
MCR22−x = Device Code
x = 6 or 8
Operating Junction Temperature Range
T
−40 to +110
−40 to +150
°C
°C
J
@ Rated V
and V
RRM
DRM
A
Y
WW
G
=
=
=
=
Assembly Location
Year
Work Week
Storage Temperature Range
T
stg
THERMAL CHARACTERISTICS
Pb−Free Package
Characteristic
Symbol
Max
50
Unit
°C/W
°C/W
°C
(Note: Microdot may be in either location)
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
q
JC
JA
L
R
160
+260
q
PIN ASSIGNMENT
Lead Solder Temperature
(Lead Length q 1/16″ from case, 10 S Max)
T
1
2
3
Cathode
Gate
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Anode
1. V
and V
for all types can be applied on a continuous basis. Ratings
DRM
RRM
apply forzeroornegativegate voltage;however, positivegate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
July, 2006 − Rev. 5
MCR22−6/D
MCR22−6, MCR22−8
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
I
, I
DRM RRM
(V = Rated V or V ; R = 1000 W)
T = 25°C
C
C
−
−
−
−
10
200
mA
mA
AK
DRM
RRM
GK
T
= 110°C
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 2)
V
I
−
1.2
1.7
V
TM
(I = 1 A Peak)
TM
Gate Trigger Current (Continuous dc) (Note 3)
T
= 25°C
−
−
30
−
200
500
mA
C
GT
(V = 6 Vdc, R = 100 W)
T
= −40°C
AK
L
C
Gate Trigger Voltage (Continuous dc) (Note 3)
T
= 25°C
V
−
−
−
−
0.8
1.2
V
V
C
GT
GD
(V = 7 Vdc, R = 100 W)
T
= −40°C
= 110°C
= 25°C
AK
L
C
Gate Non−Trigger Voltage (Note 2)
V
0.1
−
−
(V = 12 Vdc, R = 100 W)
T
C
AK
L
Holding Current
I
mA
H
(V = 12 Vdc, Gate Open)
T
−
−
2.0
−
5.0
10
AK
C
Initiating Current = 200 mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
T = −40°C
C
dv/dt
−
25
−
V/ms
(T = 110°C)
C
2. Pulse Width =1.0 ms, Duty Cycle v1%.
3. R Current not included in measurement.
GK
Voltage Current Characteristic of SCR
+ Current
Anode +
V
Symbol
Parameter
TM
V
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
DRM
DRM
on state
I
I
H
I
at V
RRM
RRM
V
RRM
I
RRM
V
TM
+ Voltage
I
Holding Current
H
I
at V
DRM
Reverse Blocking Region
(off state)
DRM
Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode −
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2
MCR22−6, MCR22−8
CURRENT DERATING
140
100
60
140
120
100
80
60
40
20
0
dc
α = 180°
α = CONDUCTION
ANGLE
dc
α = 180°
α = CONDUCTION ANGLE
20
0
0
0.2
0.4
0.6 0.8
1.0
1.2 1.4
1.6
1.8
2.0
0
0.2 0.4
I , AVERAGE ON-STATE CURRENT (AMP)
T(AV)
0.6
0.8
1.0
I
, AVERAGE ON-STATE CURRENT (AMPS)
T(AV)
Figure 1. Maximum Case Temperature
Figure 2. Maximum Ambient Temperature
5.0
3.0
2.0
T = 110°C
J
25°C
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0
0.5
1.0
1.5
2.0
2.5
V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
Figure 3. Typical Forward Voltage
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3
MCR22−6, MCR22−8
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1000
2000
5000 10000
t, TIME (ms)
Figure 4. Thermal Response
TYPICAL CHARACTERISTICS
0.8
100
V
= 7.0 V
R = 100
AK
50
0.7
0.6
0.5
L
30
20
10
5.0
3.0
2.0
0.4
0.3
1.0
−40
−75
−50
−25
0
25
50
75
100 110
−20
0
20
40
60
80
100 110
T , JUNCTION TEMPERATURE (°C)
J
T JUNCTION TEMPERATURE (°C)
J
Figure 5. Typical Gate Trigger Voltage
Figure 6. Typical Gate Trigger Current
2.0
10
1.8
1.6
1.4
180°
120
90°
°
60°
V
= 12 V
AK
30°
R = 100 W
L
5.0
2.0
1.0
1.2
1.0
dc
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
20
T , JUNCTION TEMPERATURE (°C)
−40
−20
0
40
60
80
100 110
I
, AVERAGE ON-STATE CURRENT (AMPS)
T(AV)
J
Figure 7. Typical Holding Current
Figure 8. Power Dissipation
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4
MCR22−6, MCR22−8
TO−92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL
H2A
H2A
H2B
H2B
H
W2
H4
H5
T1
L1
H1
W1
W
L
T
T2
F1
F2
D
P2
P1
P2
P
Figure 9. Device Positioning on Tape
Specification
Inches
Millimeter
Min
Max
Min
Max
Symbol
D
Item
0.1496
0.1653
0.020
0.110
.156
3.8
4.2
Tape Feedhole Diameter
Component Lead Thickness Dimension
Component Lead Pitch
0.015
0.0945
.059
0.38
2.4
1.5
8.5
0
0.51
2.8
D2
F1, F2
H
4.0
Bottom of Component to Seating Plane
Feedhole Location
0.3346
0
0.3741
0.039
0.051
0.768
0.649
0.433
−
9.5
H1
H2A
H2B
H4
H5
L
1.0
Deflection Left or Right
0
0
1.0
Deflection Front or Rear
0.7086
0.610
0.3346
0.09842
0.4921
0.2342
0.1397
0.06
18
19.5
16.5
11
Feedhole to Bottom of Component
Feedhole to Seating Plane
Defective Unit Clipped Dimension
Lead Wire Enclosure
15.5
8.5
2.5
12.5
5.95
3.55
0.15
−
−
L1
0.5079
0.2658
0.1556
0.08
12.9
6.75
3.95
0.20
1.44
0.65
19
Feedhole Pitch
P
Feedhole Center to Center Lead
First Lead Spacing Dimension
Adhesive Tape Thickness
Overall Taped Package Thickness
Carrier Strip Thickness
P1
P2
T
−
0.0567
0.027
0.7481
0.2841
0.01968
T1
0.014
0.6889
0.2165
.0059
0.35
17.5
5.5
.15
T2
Carrier Strip Width
W
6.3
Adhesive Tape Width
W1
W2
0.5
Adhesive Tape Position
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum non−cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.
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5
MCR22−6, MCR22−8
ORDERING & SHIPPING INFORMATION: MCR22 Series Packaging Options, Device Suffix
Europe
†
Equivalent
MCR22−8RL1
MCR22−8RL1G
U.S.
Shipping
Description of TO−92 Tape Orientation
2000 / Tape & Reel
Flat side of TO−92 and adhesive tape visible
MCR22−6
MCR22−6G
5000 Units / Box
N/A, Bulk
MCR22−8
MCR22−8G
MCR22−6RLRA
MCR22−6RLRAG
MCR22−6RLRP
MCR22−6RLRPG
2000 / Tape & Reel
Round side of TO−92 and adhesive tape visible
Flat side of TO−92 and adhesive tape visible
2000 / Tape & Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
MCR22−6, MCR22−8
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
SEATING
PLANE
K
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.205
0.210
0.165
0.021
0.055
0.105
0.020
D
X X
G
K
L
−−− 12.70
J
H
V
−−−
0.105
6.35
2.04
−−−
−−−
N
P
R
V
2.66
2.54
−−−
C
−−− 0.100
0.115
0.135
−−−
−−−
2.93
3.43
SECTION X−X
−−−
1
N
STYLE 10:
PIN 1. CATHODE
2. GATE
N
3. ANODE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MCR22−6/D
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