MCR25DG [ONSEMI]
Silicon Controlled Rectifiers Reverse Blocking Thyristors; 可控硅整流器反向阻断晶闸管
| 型号： | MCR25DG |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| 文件： | 总5页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCR25D, MCR25M, MCR25N
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half−wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
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Features
SCRs
25 AMPERES RMS
400 thru 800 VOLTS
• Blocking Voltage to 800 Volts
• On-State Current Rating of 25 Amperes RMS
• High Surge Current Capability − 300 Amperes
• Rugged, Economical TO−220AB Package
G
A
K
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of I , V , and I Specified for
GT GT
H
MARKING
DIAGRAM
Ease of Design
• High Immunity to dv/dt − 100 V/msec Minimum @ 125°C
• Pb−Free Packages are Available*
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
AY WW
MCR25xG
AKA
J
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
V
V
V
DRM,
RRM
TO−220AB
CASE 221A−09
STYLE 3
(T = −40 to 125°C, Sine Wave,
J
1
2
50 to 60 Hz, Gate Open)
MCR25D
MCR25M
MCR25N
400
600
800
3
A
Y
= Assembly Location
= Year
On-State RMS Current
I
25
A
A
T(RMS)
(180° Conduction Angles; T = 80°C)
WW = Work Week
C
x
G
= D, M, or N
Peak Non-repetitive Surge Current
I
300
TSM
= Pb−Free Package
(1/2 Cycle, Sine Wave 60 Hz, T = 125°C)
J
AKA = Diode Polarity
2
2
Circuit Fusing Consideration (t = 8.3 ms)
I t
373
A sec
PIN ASSIGNMENT
Cathode
Forward Peak Gate Power
P
20.0
W
W
A
GM
(Pulse Width ≤ 1.0 ms, T = 80°C)
C
1
Forward Average Gate Power
P
0.5
2.0
G(AV)
2
3
4
Anode
(t = 8.3 ms, T = 80°C)
C
Gate
Forward Peak Gate Current
I
GM
Anode
(Pulse Width ≤ 1.0 ms, T = 80°C)
C
Operating Junction Temperature Range
Storage Temperature Range
T
−40 to +125
−40 to +150
°C
°C
J
ORDERING INFORMATION
T
stg
Device
Package
Shipping
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MCR25D
TO−220AB
50 Units / Rail
50 Units / Rail
MCR25DG
TO−220AB
(Pb−Free)
MCR25M
TO−220AB
50 Units / Rail
50 Units / Rail
1. V
and V
for all types can be applied on a continuous basis. Ratings
DRM
RRM
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
MCR25MG
TO−220AB
(Pb−Free)
MCR25N
TO−220AB
50 Units / Rail
50 Units / Rail
MCR25NG
TO−220AB
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
December, 2005 − Rev. 5
MCR25/D
MCR25D, MCR25M, MCR25N
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
R
R
1.5
62.5
°C/W
q
JC
JA
q
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
260
°C
L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Peak Repetitive Forward or Reverse Blocking Current
I
I
mA
DRM
RRM
(V = Rated V
or V
, Gate Open)
RRM
T = 25°C
T = 125°C
J
−
−
−
−
0.01
2.0
AK
DRM
J
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 2)
V
−
−
12
1.8
30
1.0
40
80
V
TM
(I = 50 A)
TM
Gate Trigger Current (Continuous dc)
I
4.0
0.5
5.0
−
mA
V
GT
(V = 12 V, R = 100 W)
D
L
Gate Trigger Voltage (Continuous dc)
V
0.67
13
GT
(V = 12 V, R = 100 W)
D
L
Holding Current
(V =12 Vdc, Initiating Current = 200 mA, Gate Open)
D
I
mA
mA
H
Latching Current
I
35
L
(V = 12 V, I = 30 mA)
D
G
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
dv/dt
di/dt
100
−
250
−
−
V/ms
A/ms
(V = 67% of Rated V
D
, Exponential Waveform, Gate Open, T = 125°C)
DRM J
Critical Rate of Rise of On−State Current
50
(I = 50 A, Pw = 30 msec, diG/dt = 1 A/msec, Igt = 50 mA)
PK
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
Voltage Current Characteristic of SCR
+ Current
Anode +
V
Symbol
Parameter
TM
V
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
DRM
DRM
on state
I
I
H
I
at V
RRM
RRM
V
RRM
I
RRM
V
TM
+ Voltage
I
Holding Current
H
I
at V
DRM
Reverse Blocking Region
(off state)
DRM
Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode −
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2
MCR25D, MCR25M, MCR25N
40
35
30
25
20
15
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
5
0
0.3
0.2
−40 −25 −10
5
20 35 50 65 80 95 110 125
−40 −25 −10
5
20 35 50 65 80 95 110 125
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
1
100
10
Typical @ 25°C
Maximum @ 125°C
Z
+ R
@ R(t)
qJC(t)
qJC
Maximum @ 25°C
0.1
1
0.1
0.01
4
0.5
0.9
1.3
1.7
2.1
2.5
2.9
0.1
1
10
100
t, TIME (ms)
1000
1@10
VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
Figure 3. Typical On−State Characteristics
Figure 4. Transient Thermal Response
100
10
1
100
10
1
−40 −25 −10
−40 −25 −10
5
20 35 50 65 80 95 110 125
5
20 35 50 65 80 95 110 125
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Typical Latching Current versus
Junction Temperature
Figure 5. Typical Holding Current versus
Junction Temperature
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3
MCR25D, MCR25M, MCR25N
32
28
130
120
110
100
180°
dc
a
24
20
16
12
8
a
90°
60°
a = Conduction
Angle
a = Conduction
Angle
a = 30°
dc
90
80
4
0
180°
a = 30°
60°
90°
0
2
4
6
8
10 12 14 16
18 20
0
2
4
6
8
10 12 14 16 18 20
I
, RMS ON−STATE CURRENT (AMPS)
T(RMS)
I , AVERAGE ON−STATE CURRENT (AMPS)
T(AV)
Figure 8. On State Power Dissipation
Figure 7. Typical RMS Current Derating
2500
1200
Gate Cathode Open,
(dv/dt does not depend on RGK)
Gate−Cathode Open,
(dv/dt does not depend on RGK)
1000
800
600
400
200
0
2000
1500
1000
500
0
V
= 275
= 400
PK
85°C
100°C
110°C
V
PK
V
= 600
T = 125°C
PK
J
V
= 800
PK
200
300
400
500
600
700
800
80
85
90
95
100
105
110
115
120 125
T , Junction Temperature (°C )
J
V
, Peak Voltage (Volts)
PK
Figure 9. Typical Exponential Static dv/dt
Versus Peak Voltage
Figure 10. Typical Exponential Static dv/dt
Versus Junction Temperature
300
280
260
240
220
200
1 CYCLE
TJ=125° C f=60 Hz
180
160
1
2
3
4
5
6
NUMBER OF CYCLES
7
8
9
10
Figure 11. Maximum Non−Repetitive Surge Current
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4
MCR25D, MCR25M, MCR25N
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
B
F
T
S
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
−−−
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
1
2
3
U
H
G
H
J
K
L
L
R
N
Q
R
S
T
V
J
G
D
U
V
Z
N
0.080
2.04
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
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MCR25/D
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