MCR69-2 [ONSEMI]
SILICON CONTROLLED RECTIFIERS; 可控硅整流器器
| 型号： | MCR69-2 |
| 厂家： | 
ONSEMI |
| 描述： | SILICON CONTROLLED RECTIFIERS |
| 文件： | 总8页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Reverse Blocking Thyristors
Designed for overvoltage protection in crowbar circuits.
• Glass-Passivated Junctions for Greater Parameter Stability and
Reliability
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• Center-Gate Geometry for Uniform Current Spreading Enabling
High Discharge Current
SCRs
25 AMPERES RMS
50 thru 100 VOLTS
• Small Rugged, Thermowatt Package Constructed for Low Thermal
Resistance and Maximum Power Dissipation and Durability
• High Capacitor Discharge Current, 750 Amps
• Device Marking: Logo, Device Type, e.g., MCR69–2, Date Code
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
A
K
Rating
Symbol
Value
Unit
(1)
Peak Repetitive Off–State Voltage
V
Volts
DRM,
(T = 40 to +125°C, Gate Open)
V
RRM
J
MCR69–2
MCR69–3
50
100
4
(2)
Peak Discharge Current
On-State RMS Current
I
750
25
Amps
Amps
TM
I
T(RMS)
(180° Conduction Angles; T = 85°C)
C
Average On-State Current
(180° Conduction Angles; T = 85°C)
I
16
Amps
Amps
T(AV)
1
C
2
3
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
I
300
TSM
TO–220AB
CASE 221A
STYLE 3
T = 125°C)
J
2
2
Circuit Fusing Considerations
(t = 8.3 ms)
I t
375
2.0
20
A s
PIN ASSIGNMENT
Cathode
Forward Peak Gate Current
(t ≤ 1.0 µs, T = 85°C)
I
Amps
Watts
Watt
°C
GM
1
2
3
4
C
Anode
Forward Peak Gate Power
(t ≤ 1.0 µs, T = 85°C)
P
GM
C
Gate
Forward Average Gate Power
(t = 8.3 ms, T = 85°C)
P
0.5
G(AV)
Anode
C
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
T
J
–40 to
+125
ORDERING INFORMATION
T
–40 to
+150
°C
stg
Device
MCR69–2
MCR69–3
Package
TO220AB
TO220AB
Shipping
500/Box
500/Box
—
8.0
in. lb.
(1) V
DRM
and V for all types can be applied on a continuous basis. Ratings
RRM
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Ratings apply for t = 1 ms. See Figure 1 for I
capability for various
w
TM
duration of an exponentially decaying current waveform, t is defined as
w
5 time constants of an exponentially decaying current pulse.
(3) Test Conditions: I = 150 mA, V = Rated V
, I
DRM TM
= Rated Value,
G
D
T
= 125°C.
J
Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
February, 2000 – Rev. 0
MCR69/D
MCR69–2, MCR69–3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
1.5
60
Unit
°C/W
°C/W
°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
R
θJC
θJA
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
L
260
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Peak Repetitive Forward or Reverse Blocking Current
I
, I
DRM RRM
(V
AK
= Rated V
DRM
or V
, Gate Open)
RRM
T
T
= 25°C
= 125°C
—
—
—
—
10
2.0
µA
mA
J
J
ON CHARACTERISTICS
Peak Forward On-State Voltage
V
TM
Volts
(1)
(I
TM
(I
TM
= 50 A)
= 750 A, t = 1 ms)
—
—
—
6.0
1.8
—
(2)
w
Gate Trigger Current (Continuous dc)
(V = 12 V, R = 100 Ω)
I
2.0
7.0
0.65
0.40
15
30
1.5
—
mA
Volts
Volts
mA
GT
D
L
Gate Trigger Voltage (Continuous dc)
(V = 12 V, R = 100 Ω)
V
—
GT
D
L
Gate Non–Trigger Voltage
V
0.2
3.0
—
GD
(V = 12 Vdc, R = 100 Ω, T = 125°C)
D
L
J
Holding Current
(V = 12 V, Initiating Current = 200 mA, Gate Open)
D
I
H
50
60
—
Latching Current
I
L
—
mA
(V = 12 Vdc, I = 150 mA)
D
G
(3)
Gate Controlled Turn-On Time
t
gt
—
1.0
µs
(V = Rated V
(I
TM
, I = 150 mA)
G
D
DRM
= 50 A Peak)
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
dv/dt
di/dt
10
—
—
—
—
V/µs
A/µs
(V = Rated V
, Gate Open, Exponential Waveform, T = 125°C)
DRM J
D
Critical Rate-of-Rise of On-State Current
= 150 mA
100
I
G
T = 125°C
J
(1) Pulse duration
300 µs, duty cycle
2%.
(2) Ratings apply for t = 1 ms. See Figure 1 for I
capability for various durations of an exponentially decaying current waveform. t is defined
w
TM
w
as 5 time constants of an exponentially decaying current pulse.
(3) The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.
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2
MCR69–2, MCR69–3
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
Symbol
Parameter
V
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
DRM
DRM
on state
I
I
H
I
at V
RRM
RRM
V
RRM
I
RRM
V
TM
+ Voltage
at V
DRM DRM
I
H
Holding Current
I
Reverse Blocking Region
(off state)
Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –
1000
1.0
0.8
0.6
300
200
100
50
I
TM
0.4
t
w
0.2
0
t
w
= 5 time constants
20
25
50
75
100
125
0.5
1.0
2.0
5.0
10
20
50
T , CASE TEMPERATURE (°C)
C
t , PULSE CURRENT DURATION (ms)
w
Figure 1. Peak Capacitor Discharge Current
Figure 2. Peak Capacitor Discharge Current
Derating
32
24
125
120
115
110
105
Half Wave
dc
dc
16
8.0
0
100
95
90
Half Wave
T = 125°C
85
J
80
75
0
4.0
8.0
12
16
20
4.0
8.0
12
16
20
I
, AVERAGE ON-STATE CURRENT (AMPS)
T(AV)
I
, AVERAGE ON-STATE CURRENT (AMPS)
T(AV)
Figure 3. Current Derating
Figure 4. Maximum Power Dissipation
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3
MCR69–2, MCR69–3
1
0.7
0.5
0.3
0.2
Z
= R • r(t)
θJC(t) θJC
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1
2
3
5
10
20 30
50
100
200 300 500
1 k
2 k 3 k
5 k
10 k
t, TIME (ms)
Figure 5. Thermal Response
10
1.4
5.0
V = 12 Volts
D
L
3.0
2.0
V = 12 Volts
D
R = 100 Ω
1.2
1.0
R = 100 Ω
L
1.0
0.5
0.8
0.3
0.2
0.5
–60
–40 –20
0
20
40
60
80 100 120 140
–60 –40 –20
0
20
40
60
80 100 120 140
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Gate Trigger Current
Figure 7. Gate Trigger Voltage
3.0
2.0
V = 12 Volts
D
TM
I
= 100 mA
1.0
0.8
0.5
0.3
–60 –40 –20
0
20
40
60
80
100 120 140
T , JUNCTION TEMPERATURE (°C)
J
Figure 8. Holding Current
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4
MCR69–2, MCR69–3
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
SEATING
PLANE
–T–
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
DIM MIN MAX
0.620 14.48
MILLIMETERS
MIN
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
4
3
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
Q
A
K
0.405
0.190
0.035
0.147
0.105
0.155
0.022
9.66
4.07
0.64
3.61
2.42
2.80
0.36
1
2
U
H
G
H
J
Z
K
L
N
Q
R
S
T
U
V
Z
0.562 12.70
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
R
L
V
J
G
D
0.080
2.04
N
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
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5
MCR69–2, MCR69–3
Notes
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6
MCR69–2, MCR69–3
Notes
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7
MCR69–2, MCR69–3
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MCR69/D
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