MCR703AT4 [ONSEMI]
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors; 敏感栅硅控整流器反向阻断晶闸管
| 型号： | MCR703AT4 |
| 厂家： | 
ONSEMI |
| 描述： | Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| 文件： | 总6页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCR703A Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, low cost consumer
applications such as temperature, light and speed control; process and
remote control; and warning systems where reliability of operation is
critical.
http://onsemi.com
SCRs
4.0 AMPERES RMS
100 − 600 VOLTS
Features
• Small Size
• Passivated Die Surface for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Recommend Electrical Replacement for C106
• Surface Mount Package − Case 369C
• To Obtain “DPAK” in Straight Lead Version (Shipped in Sleeves):
Add ’1’ Suffix to Device Number, i.e., MCR706A1
• Epoxy Meets UL 94 V−0 @ 0.125 in
G
A
K
MARKING
DIAGRAMS
• ESD Ratings:
Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
4
DPAK
CASE 369C
STYLE 2
YWW
CR
70xAG
• Pb−Free Packages are Available
2
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
3
Rating
Symbol
Max
Unit
Peak Repetitive Off−State Voltage (Note 1)
V
V
V
DRM,
RRM
4
(T = −40 to +110°C, Sine Wave, 50 to 60 Hz,
C
Gate Open)
MCR703A
MCR706A
MCR708A
100
400
600
YWW
CR
70xAG
DPAK−3
CASE 369D
STYLE 2
Peak Non-Repetitive Off−State Voltage
(Sine Wave, 50 to 60 Hz, Gate Open,
V
V
RSM
1
2
3
T
C
= −40 to +110°C)
MCR703A
MCR706A
MCR708A
150
450
650
Y
= Year
WW = Work Week
70xA = Device Code
x = 3, 6 or 8
On−State RMS Current
(180° Conduction Angles; T = 90°C)
I
4.0
A
A
T(RMS)
C
G
= Pb−Free Package
Average On−State Current (180° Conduction
I
T(AV)
Angles)
T
C
T
C
= −40 to +90°C
= +100°C
2.6
1.6
PIN ASSIGNMENT
Gate
Non-Repetitive Surge Current
I
A
TSM
1
(1/2 Sine Wave, 60 Hz, T = 110°C)
(1/2 Sine Wave, 1.5 ms, T = 110°C)
25
35
J
J
2
3
4
Anode
2
2
Circuit Fusing (t = 8.3 msec)
I t
2.6
0.5
A sec
Cathode
Forward Peak Gate Power
P
W
W
A
GM
Anode
(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)
C
Forward Average Gate Power
P
0.1
0.2
G(AV)
(t = 8.3 msec, T = 90°C)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
C
Forward Peak Gate Current
I
GM
(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)
C
Operating Junction Temperature Range
Storage Temperature Range
T
−40 to +110
−40 to +150
°C
°C
J
Preferred devices are recommended choices for future use
and best overall value.
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
and V
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
DRM
RRM
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
November, 2007 − Rev. 7
MCR703A/D
MCR703A Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
8.33
80
Unit
°C/W
°C/W
°C
Thermal Resistance, Junction−to−Case
R
ꢁ
JC
JA
L
Thermal Resistance, Junction−to−Ambient (Note 2)
R
ꢁ
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
260
2. Case 369C when surface mounted on minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Peak Repetitive Forward or Reverse Blocking Current
I
, I
ꢀ
A
DRM RRM
(V = Rated V
or V
; R = 1 Kꢂ)
T = 25°C
C
C
−
−
−
−
10
200
AK
DRM
RRM
GK
T
= 110°C
ON CHARACTERISTICS
Peak Forward “On” Voltage
(I = 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle)
V
−
−
2.2
V
TM
TM
Gate Trigger Current (Continuous dc) (Note 3) (V = 12 Vdc, R = 24 ꢂ)
I
ꢀ
A
AK
L
GT
T
= 25°C
−
−
25
−
75
300
C
T
= −40°C
C
Gate Trigger Voltage (Continuous dc) (Note 3)
T
= 25°C
V
V
−
−
−
−
0.8
1.0
V
C
GT
(V = 12 Vdc, R = 24 ꢂ)
T = −40°C
C
AK
L
Gate Non-Trigger Voltage (Note 3) (V = 12 Vdc, R = 100 ꢂ, T = 110°C)
0.2
−
−
V
AK
L
C
GD
Holding Current
(V = 12 Vdc, Gate Open) T = 25°C
I
mA
H
−
−
−
−
5.0
10
AK
C
(Initiating Current = 200 mA) T = −40°C
C
Peak Reverse Gate Blocking Voltage (I = 10 ꢀ A)
V
10
−
12.5
−
18
1.2
−
V
GR
RGM
Peak Reverse Gate Blocking Current (V
= 10 V)
I
ꢀ A
ꢀ s
GR
RGM
Total Turn-On Time (Source Voltage = 12 V, R = 6 kꢂ)
t
−
2.0
S
gt
(I = 8.2 A, I = 2 mA, Rated V ) (Rise Time = 20 ns, Pulse Width = 10 ꢀ s)
TM
GT
DRM
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
dv/dt
di/dt
−
−
10
−
−
V/ꢀ s
A/ꢀ s
(V = Rated V , R = 1 kꢂ, Exponential Waveform, T = 110°C)
D
DRM
GK
C
Repetitive Critical Rate of Rise of On−State Current
(Cf = 60 Hz, I = 30 A, PW = 100 ꢀ s, diG/dt = 1 A/ꢀ s)
100
PK
3. R current not included in measurement.
GK
ORDERING INFORMATION
Device
†
Package Type
DPAK
Package
Shipping
MCR703AT4
369C
2500 Tape & Reel
2500 Tape & Reel
MCR703AT4G
DPAK
369C
(Pb−Free)
MCR706AT4
DPAK
DPAK
369C
2500 Tape & Reel
2500 Tape & Reel
MCR706AT4G
369C
(Pb−Free)
MCR708A
DPAK
DPAK
369C
2500 Tape & Reel
2500 Tape & Reel
MCR708AG
369C
(Pb−Free)
MCR708A1
DPAK−3
DPAK−3
369D
75 Units / Rail
75 Units / Rail
MCR708A1G
369D
(Pb−Free)
MCR708AT4
DPAK
DPAK
369C
2500 Tape & Reel
2500 Tape & Reel
MCR708AT4G
369C
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MCR703A Series
Voltage Current Characteristic of SCR
+ Current
Anode +
V
Symbol
Parameter
TM
V
Peak Repetitive Off−State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off−State Reverse Voltage
Peak Reverse Blocking Current
Peak On−State Voltage
DRM
DRM
on state
I
I
H
I
at V
RRM
RRM
V
RRM
I
RRM
V
TM
+ Voltage
I
Holding Current
H
I
at V
DRM
Reverse Blocking Region
(off state)
DRM
Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode −
110
105
5.0
4.0
3.0
2.0
30°C
60°C
30°C
60°C
90°C
120°C
180°C
90°C
120°C
180°C
DC
DC
100
95
1.0
0
0
1.0
2.0
3.0
4.0
5.0
0
1.0
I , AVERAGE ON−STATE CURRENT (AMPS)
T(AV)
2.0
3.0
4.0
5.0
I
, AVERAGE ON−STATE CURRENT (AMPS)
T(AV)
Figure 1. Average Current Derating
Figure 2. On−State Power Dissipation
100
10
1.0
Typical @ T = 25°C
J
Maximum @ T = 110°C
J
Z
= R
•r(t)
ꢁ
JC(t)
ꢁ
JC(t)
0.1
Maximum @ T = 25°C
J
1.0
0.1
0.01
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.1
1.0
10
100
1000
10,000
V , INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
T
t, TIME (ms)
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
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3
MCR703A Series
35
30
25
1.0
0.5
20
15
0
−40
−20
0
20
40
60
80
100 110
−40
−20
0
20
40
60
80
100 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
2.0
1.5
1.0
2.0
1.5
1.0
0.5
0
0.5
0
−40
−20
0
20
40
60
80
100 110
−40
−20
0
20
40
60
80
100 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
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4
MCR703A Series
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
NOTES:
SEATING
PLANE
−T−
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING DIMENSION: INCH.
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
G
0.13 (0.005)
T
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MCR703A Series
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
NOTES:
C
B
R
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
S
E
INCHES
DIM MIN MAX
MILLIMETERS
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
4
2
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
Z
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
0.155
−−−
H
D 3 PL
STYLE 2:
PIN 1. GATE
2. DRAIN
G
M
T
0.13 (0.005)
3. SOURCE
4. DRAIN
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MCR703A/D
相关型号：
MCR704ABK
Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, PLASTIC, DPAK-3
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