MCT9001 [ONSEMI]
8 引脚 DIP 双沟道光电晶体管输出光耦合器;
| 型号： | MCT9001 |
| 厂家： | 
ONSEMI |
| 描述： | 8 引脚 DIP 双沟道光电晶体管输出光耦合器 输出元件 晶体管 光电晶体管 |
| 文件： | 总12页 (文件大小：378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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July 2016
MCT9001
8-Pin Dual Channel Phototransistor Optocoupler
Features
Description
•
•
Two Isolated Channels Per Package
Safety and Regulatory Approvals:
– UL1577, 4,170 VACRMS for 1 Minute
– DIN-EN/IEC60747-5-5, 890 V Peak Working
Insulation Voltage
The general purpose optocoupler, MCT9001, has two
isolated channels in a standard plastic 8-pin dual-in-line
(DIP) package for density applications. Each channel
consists of a gallium arsenide infrared emitting diode
driving a NPN silicon planar phototransistor. For four
channel applications, two packages fit into a standard
16-pin DIP socket.
Applications
•
•
•
•
•
•
•
•
•
•
•
•
•
AC line/digital logic – isolate high voltage transients
Digital logic/digital logic – eliminate spurious grounds
Digital logic/AC triac control – isolate high voltage
transients
Twisted pair line receiver – eliminate ground loop
feedthrough
Telephone/telegraph line receiver – isolate high
voltage transients
High frequency power supply feedback control –
maintain floating grounds and transients
Relay contact monitor – isolate floating grounds and
transients
Power supply monitor – isolate transients
Functional Schematic
Package Outlines
ANODE
COLLECTOR
1
8
8
1
CATHODE
ANODE
EMITTER
2
3
4
7
6
5
COLLECTOR
8
8
1
CATHODE
EMITTER
1
Figure 2. Package Outlines
Equivalent Circuit
Figure 1. Schematic
©2003 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MCT9001 8-Pin Dual Channel Phototransistor Optocoupler Rev. 2.0
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
< 150 VRMS
< 300 VRMS
I–IV
I–IV
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Climatic Classification
55/115/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
,
1424
1668
Vpeak
VPR
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
,
Vpeak
VIORM
VIOTM
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
External Creepage
890
8000
7
Vpeak
Vpeak
mm
mm
mm
°C
External Clearance
7
DTI
TS
Distance Through Insulation (Insulation Thickness)
Case Temperature(1)
Input Current(1)
0.4
175
60
IS,INPUT
mA
PS,OUTPUT Output Power(1)
RIO
Insulation Resistance at TS, VIO = 500 V(1)
150
> 109
mW
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©2003 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MCT9001 8-Pin Dual Channel Phototransistor Optocoupler Rev. 2.0
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
Symbol
TSTG
TOPR
TJ
Parameter
Value
-55 to +150
-55 to +100
-55 to +125
260 for 10 seconds
400
Unit
°C
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
°C
°C
TSOL
°C
Total Device Power Dissipation @ TA = 25°C
Derate Above 25°C
mW
mW/°C
PD
4.83
EMITTER (Each channel)
IF
IF(pk)
VR
DC / Average Forward Input Current
60
3
mA
A
Forward Current - Peak (PW = 1μs, 300pps)
Reverse Input Voltage
5.0
100
1.1
V
Total Power Dissipation @ TA = 25°C
Derate Above 25°C
mW
mW/°C
PD(EMITTER)
DETECTOR
IC
Continuous Collector Current
Total Power Dissipation @ TA = 25°C
Derate Above 25°C
30
mA
mW
150
1.67
PD(DETECTOR)
mW/°C
©2003 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MCT9001 8-Pin Dual Channel Phototransistor Optocoupler Rev. 2.0
3
Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Symbol Parameter
Test Conditions
Min.
Typ.
Max.
Unit
EMITTER
VF
IR
Input Forward Voltage
Reverse Leakage Current
Junction Capacitance
IF = 10 mA
1.0
50
1.3
10
V
VR = 5 V
μA
pF
CJ
VF = 0 V, f = 1 MHz
DETECTOR
BVCEO
BVECO
Collector-to-Emitter Breakdown Voltage IC = 0.5 mA, IF = 0
55
7
V
Emitter-to-Collector Breakdown Voltage IE = 100 μA, IF = 0
V
V
CE = 24 V, IF = 0
5
8
100
50
nA
μA
pF
ICEO
CCE
Collector-to-Emitter Dark Current
Capacitance
VCE = 24 V, TA =85°C
VCE = 0 V, f = 1 MHz
Transfer Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
600
Unit
DC CHARACTERISTICS
CTR
I
F = 5 mA, VCE = 5 V
50
30
%
%
V
Current Transfer Ratio, Collector-to-
Emitter
CTR(SAT)
IF = 8 mA, VCE = 0.4 V
VCE(SAT) Saturation Voltage, Collector-to-Emitter IF = 8 mA, IC = 2.4 mA
0.4
AC CHARACTERISTICS
Non-Saturated
TON
TOFF
TR
Turn-On Time
Turn-Off Time
Rise Time
3.0
3.0
2.4
2.4
µs
µs
µs
µs
RL = 100 Ω, IC = 2 mA, VCC = 10 V
TF
Fall Time
Saturated
TON
Turn-On Time
Turn-Off Time
2.4
µs
µs
IF = 16 mA, RL = 1.9 kΩ, VCE = 5 V
TOFF
25.0
Isolation Characteristics
Symbol Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VISO
CISO
RISO
II-O ≤ 10 µA, t = 1 Minute
f = 1 MHz
5,000
VACRMS
Input-Output Isolation Voltage
Isolation Capacitance
0.5
pF
Isolation Resistance
VI-O = 500 VDC
1011
Ω
©2003 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MCT9001 8-Pin Dual Channel Phototransistor Optocoupler Rev. 2.0
4
Typical Performance Curves
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.4
V
T
= 5.0ꢀV
Normalized to
= 10ꢀmA
CE
= 25°C
I
A
F
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
= 5ꢀmA
F
I
= 10ꢀmA
F
Normalized to
I
T
= 10ꢀmA
A
F
I = 20ꢀmA
F
= 25°C
0
5
10
15
20
-75
-50
-25
0
25
50
75
100 125
I
- FORWARD CURRENT (mA)
T
A
- AMBIENT TEMPERATURE (°C)
F
)LJꢀꢁꢃꢁ1RUPDOL]HGꢁ&75ꢁYVꢀꢁ$PELHQWꢁ7HPSHUDWXUH
)LJꢀꢁꢂꢁ1RUPDOL]HGꢁ&75ꢁYVꢀꢁ)RUZDUGꢁ&XUUHQW
101
100
1000
I
V
T
= 10ꢀmA
=10ꢀV
F
CC
V
CE
= 10ꢀV
= 25°C
A
100
10
1
10-1
10-2
10-3
10-4
10-5
10-6
T
2))
T
)
T
21
T
5
0
25
50
75
100
125
0.1
1ꢀ
10ꢀ
0.1ꢀ
100ꢀ
T
- AMBIENT TEMPERATURE (°C)
A
R - LOAD RESISTOR (kΩ)
)LJꢀꢁꢇꢁ6ZLWFKLQJꢁ6SHHGꢁYVꢀꢁ/RDGꢁ5HVLVWRU
)LJꢀꢁꢈꢁ'DUNꢁ&XUUHQWꢁYVꢀꢁ$PELHQWꢁ7HPSHUDWXUH
1.8
1.7
1.6
1.5
1.4
100
T
= 25°C
A
10
1
I
= 2.5ꢀmA
F
T
= 55°C
= 25°C
A
0.1
1.3
1.2
1.1
1.0
T
A
I
=20ꢀmA
F
0.01
I
=10ꢀmA
F
I
= 5mA
F
T
A
= 100°C
0.001
1
10
100
0.01
0.1
1
10
IF - LED FORWARD CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
)LJꢀꢁꢆꢁ/('ꢁ)RUZDUGꢁ9ROWDJHꢁYVꢀꢁ)RUZDUGꢁ&XUUHQW
)LJꢀꢁꢄꢁ&ROOHFWRUꢅ(PLWWHUꢁ6DWXUDWLRQꢁ9ROWDJHꢁ
YVꢀꢁ&ROOHFWRUꢁ&XUUHQW
©2003 Fairchild Semiconductor Corporation
MCT9001 8-Pin Dual Channel Phototransistor Optocoupler Rev. 2.0
www.fairchildsemi.com
5
Switching Time Test Circuit and Waveforms
TEST CIRCUIT
WAVE FORMS
VCC = 10 V
INPUT PULSE
IC
IF
RL
10%
90%
INPUT
OUTPUT
OUTPUT PULSE
RBE
75
7)
72))
721
IF to produce IC = 2 mA
Adjust
Figure 9. Switching Time Test Circuit and Waveforms
©2003 Fairchild Semiconductor Corporation
MCT9001 8-Pin Dual Channel Phototransistor Optocoupler Rev. 2.0
www.fairchildsemi.com
6
Reflow Profile
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
T
P
260
240
220
200
180
160
140
120
100
80
t
P
T
L
Tsmax
t
L
Preheat Area
Tsmin
t
s
60
40
20
0
120
Time 25°C to Peak
240
360
Time (seconds)
Profile Feature
Pb-Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
200°C
Time (t ) from (Tsmin to Tsmax)
60–120 seconds
3°C/second max.
217°C
S
Ramp-up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60–150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp-down Rate (T to T )
6°C/second max.
8 minutes max.
P
L
Time 25°C to Peak Temperature
©2003 Fairchild Semiconductor Corporation
MCT9001 8-Pin Dual Channel Phototransistor Optocoupler Rev. 2.0
www.fairchildsemi.com
7
Ordering Information
Part Number
Package
Packing Method
Tube (50 units per tube)
MCT9001
DIP 8-Pin
MCT9001S
MCT9001SD
MCT9001300
MCT90013S
MCT90013SD
SMT 8-Pin (Lead Bend)
SMT 8-Pin
Tube (50 units per tube)
Tape and Reel (1,000 units per reel)
Tube (50 units per tube)
DIN EN/IEC 60747-5-5 Option
SMT 8-Pin (Lead Bend); DIN EN/IEC 60747-5-5 Option
SMT 8-Pin; DIN EN/IEC 60747-5-5 Option
Tube (50 units per tube)
Tape and Reel (1,000 units per reel)
Tube (50 units per tube)
MCT9001300W 0.4” Lead Spacing; DIN EN/IEC 60747-5-5 Option
Marking Information
1
2
0&7ꢁꢂꢂꢃꢀ
ꢀ
6
V
;ꢀꢀꢀꢀꢀ<<ꢀꢀꢀꢀ+ꢀ
ꢀ
5
3ꢁ
4ꢁ
Figure 10. Top Mark
Table 1. Top Mark Definitions
1
2
3
4
5
6
Fairchild Logo
Device Number
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
One-Digit Year Code, e.g., “6”
Digit Work Week, Ranging from “01” to “53”
Assembly Package Code
©2003 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MCT9001 8-Pin Dual Channel Phototransistor Optocoupler Rev. 2.0
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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