MDB6S [ONSEMI]
1A、600V的MicroDIP，单相桥式整流器;
| 型号： | MDB6S |
| 厂家： | 
ONSEMI |
| 描述： | 1A、600V的MicroDIP，单相桥式整流器 光电二极管 |
| 文件： | 总5页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Bridge Rectifiers,
Single-Phase, MicroDIP, 1 A
TSSOP4
CASE 948BS
MDB8S Series
MDB6S, MDB8S, MDB10S
~
Description
With the ever pressing need to improve power supply efficiency
and reliability, the MDBxS family is focused on offering a best in class
small form factor combined with best inclass efficient rectifier
performance.
IN
+
The “S” family offers industry leading balance of efficiency, size,
and cost. They offer designers improved efficiency by achieving an
industry leading V of 0.935 V Typ. at 1 A 25°C, and a V of 1.165 V
~
−
F
F
Typ. at 5 A 25°C. These lower V values offer roughly a 5% efficiency
F
improvement over measured competitive same form factor devices.
MARKING DIAGRAM
This lower V vs. competitive devices results in cooler and more
F
efficient power supply operation.
The design supports a 30 A I
and offers rated breakdown voltages up to 1000 V.
rating to absorb high surge currents
FSM
−
+
$Y&Z&3
MDBXS
Finally, the MDBxS family achieves all this in a small form factor
micro−dip package − offering a max height of 1.6 mm, and requiring
2
only 35 mm of board space.
Features
• Low Package Profile: 1.60 mm (max)
$Y
&Z
&3
= onsemi Logo
= Assembly Plant Code
= 3−Digit Data Code (Year & Week)
2
• Small Area Requirements: 35 mm
• Efficient V
F
MDBXS = Specific Device Code
X
• 0.935 V (Typ) at 1 A
• 1.165 V (Typ) at 5 A
• IF(AV) = 1.0 A
= 6, 8, 10
ORDERING INFORMATION
• IFSM = 30 A
†
Device
MDB6S
Package
Shipping
• Glass Passivated Junctions
TSSOP−4
(Pb−Free)
5000 / Tape &
Reel
• UL Certification: E352360
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
MDB8S
TSSOP−4
(Pb−Free)
5000 / Tape &
Reel
Compliant
MDB10S
TSSOP−4
(Pb−Free)
5000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
March, 2022 − Rev. 4
MDB8S/D
MDB8S Series
ABSOLUTE MAXIMUM RATINGS
(Values are at T = 25°C unless otherwise noted)
A
Value
MDB8S
800
MDB6S
MDB10S
1000
Symbol
Parameter
Units
V
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
600
420
600
V
V
V
A
A
RRM
RMS
V
560
700
V
DC
Maximum DC Blocking Voltage
800
1000
I
Average Rectified Forward Current (Note 1)
Peak Forward Surge Current (Note 2)
1.0
F(AV)
I
30
FSM
2
2
2
I t
I t Rating for fusing (t < 8.3 ms)
3.735
A S
T
Operating Junction Temperature Range
Storage Temperature Range
−55 to +150
−55 to +150
°C
°C
J
T
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. 60 Hz sine wave, R−load, TA = 25°C on FR−4 PCB.
2. 60 Hz sine wave, Non−repetitive 1 cycle peak value, TJ = 25°C.
THERMAL CHARACTERISTICS (Note 3)
Symbol
Parameter
Value
Typ.
250
150
57
Units
°C/W
°C/W
°C/W
°C/W
R
Thermal Resistance, Junction to Ambient
Measurement with Dual Dice
Measurement with Single Die
θ
JA
YJL
Thermal Characterization Junction to Lead Pin 2
Pin 1, 3, 4
15
3. Device mounted on FR−4 PCB with board size = 76.2 mm x 114.3 mm (JESD51−3 standards).
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise specified)
A
Symbol
Parameter
Conditions
Value
Unit
V
F
Maximum Forward Voltage
I = 1 A,
1.1
V
F
Pulse measurement, Per diode
I
R
Maximum Reverse Current
10
mA
At V
RRM,
Pulse measurement, Per diode
C
Typical Junction Capacitance
VR = 4 V, f = 1 MHz
10
pF
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
MDB8S Series
TYPICAL PERFORMANCE CHARACTERISTICS
1.4
1.2
T
= 25°C
A
T
= 55°C
= 85°C
A
1.0
0.8
0.6
0.4
T
A
= 150°C
T
T = 125°C
A
A
0.2
0.0
1
10
0.1
Forward Current, I [A]
F
Figure 1. Forward Voltage vs. Forward Current
(Per Diode)
1000
T
= 150°C
= 125°C
A
100
10
T
A
T
= 85°C
A
T
= 25°C
= 55°C
A
1
T
A
0.1
20
40
60
80
100
120
Percent of Rated Peak Reverse Voltage [%]
Figure 2. Typical Reverse Current Characteristic
(Per Diode)
100
f = 1 MHz
90
80
70
60
50
40
30
20
0
1
2
3
4
5
6
7
Reverse Voltage, V [V]
R
Figure 3. Total Capacitance
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSSOP4 5.0x4.4 / Micro−DIP
CASE 948BS
ISSUE O
DATE 30 NOV 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13795G
TSSOP4 5.0x4.4 / Micro−DIP
PAGE 1 OF 1
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