MGB15N43CLT4 [ONSEMI]
15A, 460V, N-CHANNEL IGBT, D2PAK-3;
| 型号： | MGB15N43CLT4 |
| 厂家： | 
ONSEMI |
| 描述： | 15A, 460V, N-CHANNEL IGBT, D2PAK-3 汽车点火 双极性晶体管 |
| 文件： | 总8页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MGP15N43CL,
MGB15N43CL
Preferred Device
Ignition IGBT
15 Amps, 430 Volts
N–Channel TO–220 and D2PAK
http://onsemi.com
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over–Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
15 AMPERES
430 VOLTS (Clamped)
VCE(on) = 1.8 mΩ
• Gate–Emitter ESD Protection
N–Channel
• Temperature Compensated Gate–Collector Voltage Clamp Limits
Stress Applied to Load
C
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
G
• Low Saturation Voltage
• High Pulsed Current Capability
4
E
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Collector–Emitter Voltage
Collector–Gate Voltage
Gate–Emitter Voltage
Symbol
Value
460
460
22
Unit
1
2
3
V
CES
V
CER
V
DC
V
DC
V
DC
A
DC
2
D PAK
TO–220AB
CASE 221A
STYLE 9
CASE 418B
STYLE 3
V
GE
1
2
Collector Current–Continuous
I
C
15
3
MARKING DIAGRAMS
& PIN ASSIGNMENTS
@ T = 25°C
C
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
D
136
1.0
Watts
W/°C
C
4
4
Cathode
Collector
Operating and Storage Temperature
Range
T , T
–55 to
175
°C
J
stg
G15N43CL
YWW
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE
CHARACTERISTICS (TJ t150°C)
G15N43CL
YWW
Characteristic
Symbol
Value
Unit
1
3
Single Pulse Collector–to–Emitter
Avalanche Energy
E
AS
mJ
Anode
Anode
2
1
Gate
3
Cathode
Emitter
V
CC
= 50 V, V = 5 V, Pk I =
300
150
GE
L
14.2 A, L = 3 mH, Starting T = 25°C
J
2
G15N43CL = Device Code
V
CC
= 50 V, V = 5 V, Pk I =
GE L
Collector
Y
WW
= Year
10 A, L = 3 mH, Starting T = 150°C
J
= Work Week
ORDERING INFORMATION
Device
Package
TO–220
D2PAK
Shipping
MGP15N43CL
50 Units/Rail
MGB15N43CLT4
800 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
November, 2001– Rev. 4
MGP15N43CL/D
MGP15N43CL, MGB15N43CL
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
1.0
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
°C/W
θ
JC
JA
JA
L
TO–220
R
R
62.5
50
θ
θ
2
D PAK
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
T
275
°C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Clamp Voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
BV
I
I
C
= 2 mA
400
–
430
–
460
40
V
DC
CES
T = –40°C to 175°C
J
V
CE
= 300 V,
Zero Gate Voltage Collector Current
µA
DC
CES
V
GE
= 0, T = 25°C
J
V
CE
= 300 V,
–
–
200
V
GE
= 0, T = 150°C
J
Reverse Collector–Emitter Leakage Current
Gate–Emitter Clamp Voltage
I
V
= –24 V
= 5 mA
–
17
–
–
–
–
1.0
22
mA
ECS
CE
BV
I
V
DC
GES
G
Gate–Emitter Leakage Current
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
I
V
= 10 V
2.0
µA
DC
GES
GE
V
GE(th)
I
= 1 mA
1.2
1.5
2.1
V
DC
C
V
GE
= V
–
CE
Threshold Temperature Coefficient (Negative)
Collector–to–Emitter On–Voltage
–
–
–
–
4.4
–
–
mV/°C
V
V
I
C
= 6 A, V = 4 V
1.8
1.8
V
DC
V
DC
CE(on)
CE(on)
GE
Collector–to–Emitter On–Voltage
I
C
= 10 A,
–
V
GE
= 4.5 V,
T = 150°C
J
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
gfs
V
CE
= 5 V, I = 6 A
8.0
15
–
Mhos
pF
C
C
V
= 15 V
= 0 V
–
–
–
950
100
8.0
–
–
–
ISS
CC
Output Capacitance
C
OSS
C
RSS
V
GE
Transfer Capacitance
f = 1 MHz
SWITCHING CHARACTERISTICS (Note 1.)
Turn–Off Delay Time
t
V
= 300 V,
= 10 A
–
–
–
–
14
7.0
0.5
4.5
–
–
–
–
µSec
µSec
nC
d(off)
CC
I
C
Fall Time
t
f
R
= 1 kΩ,
G
L = 300 µH
V = 10 V,
CC
Turn–On Delay Time
Rise Time
t
d(on)
I
C
= 6.5 A
t
r
R
= 1 kΩ,
G
R = 1 Ω
L
Q
T
Q
1
Q
2
V
= 300 V
–
–
–
TBD
TBD
TBD
–
–
–
Gate Charge
CC
I
C
= 15 A
V
= 5 V
GE
1. Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%.
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2
MGP15N43CL, MGB15N43CL
45
40
35
30
25
20
15
10
5
45
V
= 10.0 V
V
= 10.0 V
V
GE
= 4.0 V
GE
GE
40
35
30
25
20
15
10
5
V
= 4.0 V
GE
V
= 5.0 V
V
= 5.0 V
GE
GE
V
GE
= 3.0 V
V
GE
= 3.0 V
T = 25°C
j
T = 150°C
j
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE,
COLLECTOR TO EMITTER VOLTAGE (VOLTS)
V
CE,
COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
30
25
20
15
10
5
3.0
2.8
V
GE
= 15 V
V
= 10 V
CE
2.5
2.3
2.0
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
I
C
= 15 A
I
C
= 10 A
I = 5 A
C
T = 150°C
j
T = 25°C
j
T = –40°C
j
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
–50 –25
0
25
50
75
100
125 150
V
GE,
GATE TO EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
j
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation Voltage
versus Junction Temperature
2.5
10000
1000
2.0
1.5
1.0
0.5
0.0
I
C
= 1 mA
C
ISS
Mean + 4 σ
Mean – 4 σ
Mean
100
10
C
C
OSS
RSS
1
0
20 40 60 80 100 120 140 160 180 200
–50
–25
0
25
50
75
100
125 150
TEMPERATURE (°C)
V
CE,
COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
Figure 6. Threshold Voltage versus Temperature
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3
MGP15N43CL, MGB15N43CL
20
18
16
14
12
10
20
18
16
14
12
10
V
V
= 300 V
= 5.0 V
CC
GE
t
d(off)
T = 25°C
J
t
d(off)
L = 300 mH
t
f
t
f
8
6
4
2
0
8
6
4
2
0
V
CC
V
GE
= 300 V
= 5.0 V
T = 150°C
J
I
C
= 10 A
L = 300 µH
250
500
750
1000
250
500
750
1000
R , GATE RESISTANCE (OHMS)
G
R , GATE RESISTANCE (OHMS)
G
Figure 7. Switching Speed versus Gate Resistance
Figure 8. Switching Speed versus Gate Resistance
25
20
15
25
20
15
V
V
R
= 300 V
= 5.0 V
= 1000 Ω
CC
GE
t
d(off)
G
I
C
= 10 A
t
d(off)
L = 300 µH
t
f
10
5
10
5
t
f
V
V
R
300 V
= 5.0 V
= 1000 Ω
CC =
GE
G
T = 150°C
J
L = 300 mH
0
0
–50
–25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
T , CASE TEMPERATURE (°C)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 9. Switching Speed versus Case Temperature
Figure 10. Total Switching Losses
versus Collector Current
20
30
18
16
14
12
10
8
25
V
V
R
= 50 V
= 5.0 V
= 1000 Ω
CC
GE
25°C
3.0 mH
6.0 mH
G
20
15
10
5
150°C
V
CC
V
GE
= 50 V
= 5.0 V
6
4
R
= 1000 Ω
G
2
0
0
0
1
2
3
4
5
6
7
8
9
10
0
25
50
75
100
125
150
175
INDUCTOR (mH)
TEMPERATURE (°C)
Figure 11. Latch Current versus Inductor (Typical)
Figure 12. Latch Current versus Temperature (Typical)
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4
MGP15N43CL, MGB15N43CL
PACKAGE DIMENSIONS
TO–220 THREE–LEAD
TO–220AB
CASE 221A–09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
B
F
T
S
4
1
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
2
3
U
H
G
H
J
K
L
L
R
N
Q
R
S
T
V
J
G
D
U
V
Z
N
0.080
2.04
STYLE 9:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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5
MGP15N43CL, MGB15N43CL
PACKAGE DIMENSIONS
D2PAK
CASE 418B–03
ISSUE D
C
E
V
–B–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
INCHES
DIM MIN MAX
MILLIMETERS
A
MIN
8.64
9.65
4.06
0.51
1.14
MAX
9.65
10.29
4.83
0.89
1.40
A
B
C
D
E
G
H
J
0.340
0.380
0.160
0.020
0.045
0.380
0.405
0.190
0.035
0.055
S
1
2
3
–T–
SEATING
PLANE
K
0.100 BSC
2.54 BSC
0.080
0.018
0.090
0.575
0.045
0.110
0.025
0.110
0.625
0.055
2.03
0.46
2.79
0.64
J
G
K
S
V
2.29
14.60
1.14
2.79
15.88
1.40
H
D 3 PL
M
M
T B
0.13 (0.005)
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
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6
MGP15N43CL, MGB15N43CL
Notes
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7
MGP15N43CL, MGB15N43CL
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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MGP15N43CL/D
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