MJD117 [ONSEMI]
Complementary Darlington Power Transistors; 互补达林顿功率晶体管
| 型号： | MJD117 |
| 厂家： | 
ONSEMI |
| 描述： | Complementary Darlington Power Transistors |
| 文件： | 总8页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJD112 (NPN)
MJD117 (PNP)
Preferred Device
Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
SILICON
POWER TRANSISTORS
2 AMPERES
Features
• Pb−Free Packages are Available
100 VOLTS
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
20 WATTS
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel
(“T4” and “RL” Suffix)
MARKING
DIAGRAMS
• Electrically Similar to Popular TIP31 and TIP32 Series
4
DPAK
CASE 369C
YWW
J11x
2
1
MAXIMUM RATINGS
3
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Max
100
100
5
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
4
V
CB
DPAK−3
CASE 369D
YWW
J11x
V
EB
I
C
2
4
Collector Current − Continuous
Peak
1
2
3
Base Current
I
B
50
mAdc
Y
WW
x
= Year
= Work Week
= 2 or 7
P
D
20
0.16
W
W/°C
Total Power Dissipation @ T = 25°C
C
Derate above 25°C
P
D
1.75
0.014
Total Power Dissipation* @ T = 25°C
W
W/°C
A
Derate above 25°C
Operating and Storage Junction Temperature
Range
T , T
−65 to
+150
°C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
J
stg
dimensions section on page 2 of this data sheet.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
Preferred devices are recommended choices for future use
and best overall value.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
6.25
71.4
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient*
R
q
JC
JA
R
q
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
August, 2004 − Rev. 5
MJD112/D
MJD112 (NPN) MJD117 (PNP)
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (1)
(I = 30 mAdc, I = 0)
V
100
−
−
20
20
2
Vdc
mAdc
mAdc
mAdc
CEO(sus)
C
B
Collector Cutoff Current
(V = 50 Vdc, I = 0)
I
I
CEO
CBO
CE
B
Collector Cutoff Current
(V = 100 Vdc, I = 0)
−
CB
E
Emitter Cutoff Current
(V = 5 Vdc, I = 0)
I
−
EBO
BE
C
Collector−Cutoff Current (V = 80 Vdc, I = 0)
I
−
−
10
2
mAdc
CB
E
CBO
Emitter−Cutoff Current (V = 5 Vdc, I = 0)
I
EBO
mAdc
BE
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 0.5 Adc, V = 3 Vdc)
C
CE
500
1000
200
−
12,000
−
(I = 2 Adc, V = 3 Vdc)
C
CE
(I = 4 Adc, V = 3 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 2 Adc, I = 8 mAdc)
V
V
Vdc
CE(sat)
C
B
−
−
2
3
(I = 4 Adc, I = 40 mAdc)
C
B
Base−Emitter Saturation Voltage (I = 4 Adc, I = 40 mAdc)
−
−
4
Vdc
Vdc
C
B
BE(sat)
Base−Emitter On Voltage (I = 2 Adc, V = 3 Vdc)
V
BE(on)
2.8
C
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
CE
f
T
25
−
MHz
pF
(I = 0.75 Adc, V = 10 Vdc, f = 1 MHz)
C
CE
Output Capacitance
(V = 10 Vdc, I = 0, f = 0.1 MHz)
C
ob
MJD117
MJD112
CB
E
−
−
200
100
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ORDERING INFORMATION
†
Device
Package Type
DPAK
Package
369C
Shipping
MJD112
75 Units / Rail
75 Units / Rail
MJD112−001
MJD112RL
MJD112T4
MJD112T4G
DPAK−3
DPAK
369D
369C
1800 Tape & Reel
2500 Tape & Reel
2500 Tape & Reel
DPAK
369C
DPAK
369C
(Pb−Free)
MJD117
DPAK
369C
369C
75 Units / Rail
75 Units / Rail
MJD117G
DPAK
(Pb−Free)
MJD117−001
MJD117T4
DPAK−3
DPAK
369D
369C
75 Units / Rail
2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
f
+
MJD112 (NPN) MJD117 (PNP)
4
R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS
V
CC
−ꢂ30 V
B
ꢃD , MUST BE FAST RECOVERY TYPE, e.g.:
C
V
CC
I /I = 250
= 30 V
I
= I
B1 B2
1
t
s
T = 25°C
C B
J
ꢃꢃ1N5825 USED ABOVE I ≈ 100 mA
B
ꢃꢃMSD6100 USED BELOW I ≈ 100 mA
2
B
R
C
SCOPE
TUT
V
2
R
B
t
APPROX
8 V
1
0.8
≈ 8 k ≈ 60
D
51
1
t
r
0
0.6
V
1
APPROX
−12 V
+ 4 V
0.4
25 ms
t @ V
d
= 0 V
BE(off)
PNP
NPN
FOR t AND t , D IS DISCONNECTED
1
d
AND V = 0
r
t , t ≤ 10 ns
r
f
DUTY CYCLE = 1%
2
0.2
0.04
0.1
0.2
0.4 0.6
1
2
4
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
0.06
I , COLLECTOR CURRENT (AMP)
C
Figure 1. Switching Times Test Circuit
Figure 2. Switching Times
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
(pk)
R
R
= r(t) R
q
JC
q
JC(t)
0.05
= 6.25°C/W
q
JC
0.1
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.01
t
1
1
t
2
T
− T = P
C
q
(pk) JC(t)
J(pk)
0.03
0.02
SINGLE PULSE
0.02 0.03 0.05
DUTY CYCLE, D = t /t
1 2
0.01
0.01
0.1
0.2 0.3 0.5
1
2
3
5
10
20 30
50
100
200 300 500 1000
t, TIME OR PULSE WIDTH (ms)
Figure 3. Thermal Response
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3
MJD112 (NPN) MJD117 (PNP)
ACTIVE−REGION SAFE−OPERATING AREA
T
A
T
C
10
7
2.5 25
5
100ꢁms
3
2
500ꢁms
2 20
1
0.7
0.5
5ꢁms
dc
1ꢁms
1.5 15
0.3
0.2
T
C
T
A
BONDING WIRE LIMITED
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1
0.5
0
10
5
SURFACE
MOUNT
0.1
T = 150°C
J
CURVES APPLY BELOW RATED V
CEO
0
2
3
5
7
10
20 30
50 70 100
200
25
50
75
100
125
15
T, TEMPERATURE (°C)
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
Figure 5. Power Derating
200
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
T
= 25°C
C
breakdown. Safe operating area curves indicate I − V
C
CE
100
70
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
50
The data of Figures 5 and 6 is based on T
= 150_C;
J(pk)
C
ob
T is variable depending on conditions. Second breakdown
C
30
20
pulse limits are valid for duty cycles to 10% provided T
J(pk)
C
2
ib
< 150_C.
T
may be calculated from the data in
J(pk)
PNP
NPN
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10
0.04 0.06 0.1
0.2 0.4 0.6
1
4
6
10
20 40
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Capacitance
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4
MJD112 (NPN) MJD117 (PNP)
TYPICAL ELECTRICAL CHARACTERISTICS
PNP MJD117
NPN MJD112
6 k
6 k
T = 125°C
J
V
CE
= 3 V
V
CE
= 3 V
T
= 125°C
C
4 k
3 k
4 k
3 k
25°C
2 k
2 k
25°C
1 k
1 k
800
800
−ꢂ55°C
−ꢂ55°C
600
600
400
300
400
300
0.04 0.06 0.1
0.2
0.4 0.6
1
2
4
0.04 0.06 0.1
0.2
0.4 0.6
1
2
4
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 7. DC Current Gain
3.4
3.4
T = 125°C
J
T = 125°C
J
3
2.6
2.2
1.8
1.4
3
I
=
0.5 A
C
I
=
0.5 A
1 A
2 A
4 A
C
2.6
2.2
1.8
1 A
2 A
4 A
1.4
1
1
0.6
0.1 0.2
0.6
0.1 0.2
0.5
1
2
5
10
20
50
100
0.5
1
2
5
10
20
50 100
I , BASE CURRENT (mA)
B
I , BASE CURRENT (mA)
B
Figure 8. Collector Saturation Region
2.2
1.8
1.4
1
2.2
T = 25°C
T = 25°C
J
J
1.8
V
@ I /I = 250
C B
V
@ I /I = 250
BE(sat) C B
BE(sat)
V
BE
@ V = 3 V
CE
1.4
1
V
BE
@ V = 3 V
CE
V
@ I /I = 250
C B
CE(sat)
V
@ I /I = 250
C B
CE(sat)
0.6
0.6
0.2
0.2
0.04 0.06 0.1
0.2
0.4 0.6
1
2
4
0.04 0.06 0.1
0.2
0.4 0.6
1
2
4
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 9. “On Voltages
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5
−
−
−
−
0.8
1.6
2.4
3.2
−ꢂ0.8
−ꢂ1.6
−ꢂ2.4
−ꢂ3.2
−
4
−ꢂ55°C TO 25°C
−ꢂ4
−
4.8
0.04 0.06
−ꢂ4.8
0.04 0.06
−
.6
−
0
0
0
+ꢂ0.2 +ꢂ0.4 +ꢂ0.6
+ꢂ0.8 +ꢂ1 +ꢂ1.2 +ꢂ1.4
+ꢂ0.6 +ꢂ0.4 +ꢂ0.2
0
−ꢂ0.2 −ꢂ0.4 −ꢂ0.6 −ꢂ0.8 −ꢂ1 −ꢂ1.2 −ꢂ1.4
V , BASE−EMITTER VOLTAGE (VOLTS)
BE
+
0.8
0
+ꢂ0.8
0
MJD112 (NPN) MJD117 (PNP)
NPN MJD112
PNP MJD117
*APPLIED FOR I /I < h /3
C B FE
*APPLIES FOR I /I < h /3
C B FE
25°C TO 150°C
−ꢂ55°C TO 25°C
25°C TO 150°C
*q FOR V
VC
CE(sat)
*q FOR V
VC
CE(sat)
−ꢂ55°C TO 25°C
25°C TO 150°C
25°C TO 150°C
−ꢂ55°C TO 25°C
q
FOR V
BE
VC
q
FOR V
0.1
VB
BE
0.1
0.2
0.4 0.6
1
2
4
0.2
0.4 0.6
1
2
4
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 10. Temperature Coefficients
5
5
10
10
REVERSE
FORWARD
REVERSE
FORWARD
4
3
2
4
10
10
10
10
3
V
CE
= 30 V
V
CE
= 30 V
10
10
2
T = 150°C
J
T = 150°C
J
1
1
10
10
10
10
100°C
25°C
0
0
100°C
25°C
.4 −ꢂ0.2
−1
−1
10
10
V
BE
, BASE−EMITTER VOLTAGE (VOLTS)
Figure 11. Collector Cut−Off Region
COLLECTOR
COLLECTOR
PNP
NPN
BASE
BASE
≈ 8 k
≈ 120
≈ 8 k
≈ 120
EMITTER
EMITTER
Figure 12. Darlington Schematic
http://onsemi.com
6
MJD112 (NPN) MJD117 (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
NOTES:
SEATING
−T−
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
PLANE
C
2. CONTROLLING DIMENSION: INCH.
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
G
0.13 (0.005)
T
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
MJD112 (NPN) MJD117 (PNP)
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
NOTES:
C
B
R
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
S
E
INCHES
DIM MIN MAX
MILLIMETERS
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
4
2
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
G
M
T
0.13 (0.005)
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MJD112/D
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