MJD340_11 [ONSEMI]
High Voltage Power Transistors; 高电压功率晶体管
| 型号： | MJD340_11 |
| 厂家： | 
ONSEMI |
| 描述： | High Voltage Power Transistors |
| 文件： | 总5页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJD340 (NPN)
MJD350 (PNP)
High Voltage Power
Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for line operated audio output amplifier, switchmode
power supply drivers and other switching applications.
SILICON
Features
POWER TRANSISTORS
0.5 AMPERE
300 VOLTS, 15 WATTS
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Electrically Similar to Popular MJE340 and MJE350
• 300 V (Min) − V
CEO(sus)
4
• 0.5 A Rated Collector Current
• Epoxy Meets UL 94 V−0 @ 0.125 in
2
1
• ESD Ratings: Human Body Model, 3B u 8000 V
3
Machine Model, C u 400 V
DPAK
CASE 369C
STYLE 1
• These are Pb−Free Packages
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Max
300
300
3
Unit
Vdc
Vdc
Vdc
Adc
MARKING DIAGRAM
V
CEO
V
CB
AYWW
J3x0G
V
EB
I
C
0.5
0.75
Collector Current − Continuous
− Peak
A
Y
= Assembly Location
= Year
P
P
15
W
Total Power Dissipation @ T = 25°C
D
C
0.12
W/°C
Derate above 25°C
WW = Work Week
J3x0 = Device Code
x= 4 or 5
Total Power Dissipation (Note 1)
D
1.56
0.012
W
W/°C
@ T = 25°C
A
G
= Pb−Free Package
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
−65 to +150
°C
J
stg
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
8.33
80
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Case
R
q
JC
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
q
JA
Leading Temperature for Soldering Purpose
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
January, 2011 − Rev. 8
MJD340/D
MJD340 (NPN) MJD350 (PNP)
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(I = 1 mA, I = 0)
V
300
−
−
V
CEO(sus)
C
B
Collector Cutoff Current
(V = 300 V, I = 0)
I
0.1
0.1
mA
mA
CEO
CB
E
Emitter Cutoff Current
(V = 3 V, I = 0)
I
−
EBO
BE
C
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
30
−
240
1
−
V
V
FE
(I = 50 mA, V = 10 V)
C
CE
Collector−Emitter Saturation Voltage
(I = 100 mA, I = 10 mA)
V
CE(sat)
C
B
Base−Emitter On Voltage
(I = 1 A, V = 10 V)
V
−
1.5
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
f
T
10
−
MHz
(I = 50 mA, V = 10 V, f = 10 MHz)
C
CE
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
TYPICAL CHARACTERISTICS
MJD340
300
200
V
CE
= 2 V
V
CE
= 10 V
T = 150°C
J
100
70
+100°C
+ꢀ25°C
50
30
20
-ꢀ55°C
10
1
2
3
5
7
10
20
30
50
70
100
200
300
500
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. DC Current Gain
http://onsemi.com
2
MJD340 (NPN) MJD350 (PNP)
MJD340
1
0.8
0.6
0.4
0.2
T = 25°C
J
V
@ I /I = 10
C B
BE(sat)
V
BE
@ V = 10 V
CE
V
@ I /I = 10
C B
CE(sat)
I /I = 5
C B
0
10
20 30
50
100
200 300
500
I , COLLECTOR CURRENT (mA)
C
Figure 2. “On” Voltages
MJD350
MJD350
1
200
1
T = 150°C
J
T = 25°C
J
0.8
0.6
0.4
0.2
0
25°C
100
70
V
@ I /I = 10
C B
BE(sat)
V
BE
@ V = 10 V
CE
-ꢀ55°C
50
I /I = 10
B
C
30
20
V
V
= 2 V
CE
= 10 V
CC
V
CE(sat)
I /I = 5
C B
10
5
7
10
20 30
50 70 100
200 300
500
5
7
10
20 30
50 70 100
200 300 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
Figure 4. “On” Voltages
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
P
(pk)
0.1
R
R
= r(t) R
q
JC
q
q
JC(t)
= 8.33°C/W MAX
0.05
JC
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.01
0.07
0.05
t
1
READ TIME AT t
t
2
1
T
- T = P q
C (pk) JC(t)
J(pk)
DUTY CYCLE, D = t /t
1 2
0.03
0.02
SINGLE PULSE
0.01
0.01 0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20 30 50
100
200 300 500
1 k
t, TIME (ms)
Figure 5. Thermal Response
http://onsemi.com
3
MJD340 (NPN) MJD350 (PNP)
1000
500
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
100 ms
300
200
breakdown. Safe operating area curves indicate I − V
500 ms
C
CE
1 ms
dc
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
100
50
30
20
The data of Figure 6 is based on T
variable depending on conditions. Second breakdown pulse
= 150_C; T is
J(pk)
C
10
5
limits are valid for duty cycles to 10% provided T
J(pk)
v 150_C.
T
may be calculated from the data in
J(pk)
3
2
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
1
10
20 30
50 70 100
200 300
500 700 1000
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Active Region Safe Operating Area
T
A
T
C
2.5 25
2
20
1.5 15
T
A
T
1
0.5
0
10
5
C
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 7. Power Derating
ORDERING INFORMATION
†
Device
Package
Shipping
MJD340G
DPAK
75 Units / Rail
1800 / Tape & Reel
2500 / Tape & Reel
75 Units / Rail
(Pb−Free)
MJD340RLG
MJD340T4G
MJD350G
DPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
MJD350T4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
4
MJD340 (NPN) MJD350 (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
D
A
E
c2
b3
B
4
2
L3
L4
Z
H
DETAIL A
1
3
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
b2 0.030 0.045
b3 0.180 0.215
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2 0.018 0.024
GAUGE
SEATING
PLANE
L2
PLANE
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
L2
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
0.020 BSC
DETAIL A
L3 0.035 0.050
ROTATED 905 CW
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
STYLE 1:
PIN 1. BASE
SOLDERING FOOTPRINT*
2. COLLECTOR
3. EMITTER
4. COLLECTOR
6.20
3.0
0.244
0.118
2.58
0.101
5.80
1.6
0.063
6.172
0.243
0.228
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
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USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
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For additional information, please contact your local
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MJD340/D
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