MJD47TF [ONSEMI]
1.0 A, 250 V High Voltage NPN Bipolar Power Junction Transistor;型号: | MJD47TF |
厂家: | ONSEMI |
描述: | 1.0 A, 250 V High Voltage NPN Bipolar Power Junction Transistor 晶体管 |
文件: | 总5页 (文件大小:175K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
March 2014
MJD47 / MJD50
NPN Epitaxial Silicon Transistor
Features
• High-Voltage and High-Reliability
• D-PAK for Surface-Mount Applications
• Lead-Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “ - I ” Suffix)
D-PAK
I-PAK
1
1
1.Base 2.Collector 3.Emitter
• Electrically Similar to Popular TIP47 and TIP50
Ordering Information
Part Number
MJD47TF
Top Mark
MJD47
Package
Packing Method
TO-252 3L (DPAK)
TO-252 3L (DPAK)
Tape and Reel
Tape and Reel
MJD50TF
MJD50
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
MJD47
MJD50
MJD47
MJD50
350
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
V
500
250
VCEO
V
400
VEBO
IC
ICP
IB
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
5
V
A
1
2
0.6
A
A
TJ
Junction Temperature
150
°C
°C
TSTG
Storage Temperature Range
- 65 to 150
© 2001 Fairchild Semiconductor Corporation
MJD47 / MJD50 Rev. 1.1.0
www.fairchildsemi.com
1
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
15.0
Unit
Collector Dissipation (TC = 25°C)
Collector Dissipation (TA = 25°C)
PC
W
1.56
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
250
Typ.
Max.
Unit
MJD47
MJD50
Collector-Emitter Sustaining
Voltage(1)
VCEO(sus)
IC = 30 mA, IB = 0
V
400
MJD47 VCE = 150 V, IB = 0
MJD50 CE = 300 V, IB = 0
MJD47 VCE = 350 V, VEB = 0
MJD50 CE = 500 V, VEB = 0
0.2
0.2
0.1
0.1
1
ICEO
Collector Cut-Off Current
mA
V
ICES
IEBO
hFE
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(1)
mA
mA
V
VBE = 5 V, IC = 0
VCE = 10 V, IC = 0.3 A
VCE = 10 V, IC = 1 A
IC = 1 A, IB = 0.2 A
VCE = 10 V, IC = 1 A
VCE = 10 V, IC = 0.2 A
30
10
150
VCE(sat) Collector-Emitter Saturation Voltage(1)
VBE(on) Base-Emitter On Voltage(1)
1
V
V
1.5
fT
Current Gain Bandwidth Product
10
MHz
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
© 2001 Fairchild Semiconductor Corporation
MJD47 / MJD50 Rev. 1.1.0
www.fairchildsemi.com
2
Typical Performance Characteristics
10
1000
VCE = 2V
IC = 5 IB
VBE(sat)
1
100
10
1
0.1
VCE(sat)
0.01
0.01
0.1
1
10
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
10
VCC = 200V
IC = 5IB
VCC = 200V
IC = 5IB
1
tSTG
1
tR
0.1
0.1
tF
tD
0.01
0.01
0.01
0.01
0.1
1
10
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Turn-On Time
Figure 4. Turn-Off Time
20
10
ICP(max)
IC(max)
15
10
5
1
0.1
0.01
1E-3
0
0
25
50
75
100
125
150
175
1
10
100
1000
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
Figure 6. Power Derating
© 2001 Fairchild Semiconductor Corporation
MJD47 / MJD50 Rev. 1.1.0
www.fairchildsemi.com
3
Physical Dimensions
TO-252 3L
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Figure 7. 3-LEAD, TO-252, JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK) (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/TO/TO252D03.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO252D03.pdf.
© 2001 Fairchild Semiconductor Corporation
MJD47 / MJD50 Rev. 1.1.0
www.fairchildsemi.com
4
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPowerA
AX-CAP®*
F-PFSA
®*
FRFET®
®
Global Power ResourceSM
GreenBridgeA
Green FPSA
Green FPSA e-SeriesA
GmaxA
TinyBoost®
TinyBuck®
TinyCalcA
TinyLogic®
TINYOPTOA
TinyPowerA
TinyPWMA
TinyWireA
TranSiCA
PowerTrench®
PowerXS™
Programmable Active DroopA
QFET®
BitSiCA
Build it NowA
CorePLUSA
CorePOWERA
CROSSVOLTA
CTLA
QSA
GTOA
IntelliMAXA
Quiet SeriesA
RapidConfigureA
A
Current Transfer LogicA
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMaxA
ISOPLANARA
Making Small Speakers Sound Louder
and Better™
Saving our world, 1mW/W/kW at a time™
SignalWiseA
SmartMaxA
TriFault DetectA
TRUECURRENT®*
ꢀSerDesA
MegaBuckA
ESBCA
MICROCOUPLERA
MicroFETA
SMART STARTA
Solutions for Your SuccessA
SPM®
®
MicroPakA
Fairchild®
UHC®
MicroPak2A
Fairchild Semiconductor®
FACT Quiet SeriesA
FACT®
STEALTHA
MillerDriveA
Ultra FRFETA
UniFETA
VCXA
VisualMaxA
VoltagePlusA
XS™
SuperFET®
MotionMaxA
mWSaver®
SuperSOTA-3
FAST®
SuperSOTA-6
SuperSOTA-8
SupreMOS®
OptoHiTA
FastvCoreA
FETBenchA
FPSA
OPTOLOGIC®
OPTOPLANAR®
SyncFETA
Sync-Lock™
❺
™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain
life, and (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Rev. I68
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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