MJE170 [ONSEMI]
Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS; 塑料互补硅功率晶体管40 - 60 - 80伏12.5沃茨
| 型号： | MJE170 |
| 厂家： | 
ONSEMI |
| 描述： | Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS |
| 文件： | 总6页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJE170, MJE171, MJE172
(PNP), MJE180, MJE181,
MJE182 (NPN)
Preferred Device
Complementary Plastic
Silicon Power Transistors
http://onsemi.com
The MJE170/180 series is designed for low power audio amplifier
and low current, high speed switching applications.
3 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
40 − 60 − 80 VOLTS
12.5 WATTS
Features
• Collector−Emitter Sustaining Voltage −
V
= 40 Vdc − MJE170, MJE180
= 60 Vdc − MJE171, MJE181
= 80 Vdc − MJE172, MJE182
CEO(sus)
• DC Current Gain −
h
= 30 (Min) @ I = 0.5 Adc
FE
C
= 12 (Min) @ I = 1.5 Adc
C
• Current−Gain − Bandwidth Product −
= 50 MHz (Min) @ I = 100 mAdc
f
T
C
• Annular Construction for Low Leakages −
TO−225AA
CASE 77−09
STYLE 1
I
= 100 nA (Max) @ Rated V
CB
CBO
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Machine Model, C
Human Body Model, 3B
3
2
1
• Pb−Free Packages are Available*
MARKING DIAGRAM
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Base Voltage
MJE170, MJE180
MJE171, MJE181
MJE172, MJE182
V
Vdc
CB
YWW
JE1xxG
60
80
100
Collector−Emitter Voltage
MJE170, MJE180
V
Vdc
CEO
40
60
80
MJE171, MJE181
MJE172, MJE182
Y
= Year
WW
= Work Week
Emitter−Base Voltage
V
7.0
Vdc
Adc
EB
JE1xx = Specific Device Code
x = 70, 71, 72, 80, 81, or 82
G
Collector Current − Continuous
− Peak
I
3.0
6.0
C
= Pb−Free Package
Base Current
I
1.0
Adc
B
Total Power Dissipation @ T = 25_C
P
1.5
0.012
W
C
D
D
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Derate above 25_C
W/_C
Total Power Dissipation @ T = 25_C
P
12.5
0.1
W
A
Derate above 25_C
W/_C
Operating and Storage Junction
Temperature Range
T , T
J
−65 to +150
_C
stg
Preferred devices are recommended choices for future use
and best overall value.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be
affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 9
MJE171/D
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
10
Unit
_C/W
_C/W
Thermal Resistance, Junction−to−Case
q
JC
JA
Thermal Resistance, Junction−to−Ambient
83.4
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I = 10 mAdc, I = 0)
MJE170, MJE180
MJE171, MJE181
MJE172, MJE182
V
40
60
80
Vdc
CEO(sus)
−
−
C
B
Collector Cutoff Current
(V = 60 Vdc, I = 0)
I
mAdc
CBO
MJE170, MJE180
MJE171, MJE181
MJE172, MJE182
MJE170, MJE180
MJE171, MJE181
MJE172, MJE182
−
−
−
0.1
0.1
0.1
CB
E
(V = 80 Vdc, I = 0)
CB
E
(V = 100 Vdc, I = 0)
mAdc
CB
E
(V = 60 Vdc, I = 0, T = 150°C)
CB
E
C
C
C
(V = 80 Vdc, I = 0, T = 150°C)
−
−
0.1
0.1
CB
E
(V = 100 Vdc, I = 0, T = 150°C)
CB
E
Emitter Cutoff Current
(V = 7.0 Vdc, I = 0)
I
−
0.1
mAdc
EBO
BE
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 100 mAdc, V = 1.0 Vdc)
50
30
12
250
−
−
C
CE
CE
CE
(I = 500 mAdc, V = 1.0 Vdc)
C
(I = 1.5 Adc, V = 1.0 Vdc)
C
Collector−Emitter Saturation Voltage
(I = 500 mAdc, I = 50 mAdc)
V
V
Vdc
CE(sat)
−
−
−
0.3
0.9
1.7
C
B
(I = 1.5 Adc, I = 150 mAdc)
C
B
(I = 3.0 Adc, I = 600 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = 1.5 Adc, I = 150 mAdc)
Vdc
Vdc
BE(sat)
−
−
1.5
2.0
C
B
(I = 3.0 Adc, I = 600 mAdc)
C
B
Base−Emitter On Voltage
(I = 500 mAdc, V = 1.0 Vdc)
V
−
1.2
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 1)
f
50
−
MHz
pF
T
(I = 100 mAdc, V = 10 Vdc, f
= 10 MHz)
C
CE
test
Output Capacitance
C
ob
(V = 10 Vdc, I = 0, f = 0.1 MHz)
MJE171/MJE172
MJE181/MJE182
−
−
60
40
CB
E
1. f = ⎪h ⎪• f
.
T
fe
test
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2
−
9.0 V
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
T
A
T
C
2.8 14
2.4 12
2.0 10
1.6 8.0
1.2 6.0
0.8 4.0
0.4 2.0
T
C
T
A
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
V
CC
+ꢀ30 V
1K
V
I /I = 10
= 30 V
CE
500
300
C B
R
C
t
r
25 ms
V
= 4.0 V
BE(off)
200
SCOPE
+11 V
0
R
T = 25°C
J
B
100
50
D
1
51
30
20
t
d
t , t ≤ 10 ns
r
f
DUTY CYCLE =
−ꢀ4 V
10
5
1.0%
NPN MJE181/182
PNP MJE171/172
R and R VARIED TO OBTAIN DESIRED CURRENT LEVELS
B
C
ꢁD MUST BE FAST RECOVERY TYPE, e.g.:
3
2
1
ꢁꢁ1N5825 USED ABOVE I ≈ 100 mA
ꢁꢁMSD6100 USED BELOW I ≈ 100 mA
B
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.
B
1
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
1
2
3
5
10
I , COLLECTOR CURRENT (AMPS)
C
Figure 3. Turn−On Time
Figure 2. Switching Time Test Circuit
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
(pk)
q
q
(t) = r(t) q
JC
JC
0.05
= 10°C/W MAX
JC
0.1
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
0.01
t
1
t
2
1
T
− T = P q (t)
C (pk) JC
J(pk)
0.03
0.02
DUTY CYCLE, D = t /t
0 (SINGLE PULSE)
1 2
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
t, TIME (ms)
Figure 4. Thermal Response
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3
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
ACTIVE−REGION SAFE OPERATING AREA
10
10
5.0
5.0
100ꢃms
100ꢃms
500ꢃms
2.0
1.0
0.5
2.0
500ꢃms
1.0
dc
5.0ꢃms
dc
5.0ꢃms
0.5
T = 150°C
J
T = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @
J
BONDING WIRE LIMITED
THERMALLY LIMITED @
0.2
0.1
0.2
0.1
ꢂT = 25°C (SINGLE PULSE)
C
ꢂT = 25°C (SINGLE PULSE)
C
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
0.05
0.05
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
MJE181
0.02
0.01
0.02
0.01
ꢂRATED V
CEO
MJE171
MJE172
ꢂRATED V
CEO
MJE182
1.0
2.0 3.0
5.0
10
20 30
50
100
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
CE
Figure 5. MJE171, MJE172
Figure 6. MJE181, MJE182
There are two limitations on the power handling ability of
a transistor − average junction temperature and second
The data of Figures 5 and 6 is based on T
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
= 150°C; T
J(pk) C
breakdown. Safe operating area curves indicate I − V
C
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
T
t 150°C. T
may be calculated from the data in
J(pk)
J(pk)
Figure 4. At high case temperature, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10K
100
PNP MJE171/MJE172
NPN MJE181/MJE182
V
I /I = 10
= 30 V
5K
CC
70
50
3K
2K
C B
I = I
B1 B2
T = 25°C
J
1K
C
ib
T = 25°C
J
500
300
200
t
s
30
20
100
50
t
f
C
30
20
ob
NPN MJE181/182
PNP MJE171/172
10
10
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
0.01
0.03 0.05 0.1 0.2 0.3 0.5
1
2
3
5
10
0.02
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (AMPS)
C
Figure 8. Capacitance
Figure 7. Turn−Off Time
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4
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
ORDERING INFORMATION
Device
Package
Shipping
MJE170
TO−225
MJE170G
TO−225
(Pb−Free)
MJE171
TO−225
MJE171G
TO−225
(Pb−Free)
MJE172
TO−225
MJE172G
TO−225
(Pb−Free)
500 Units / Box
MJE180
TO−225
MJE180G
TO−225
(Pb−Free)
MJE181
TO−225
MJE181G
TO−225
(Pb−Free)
MJE182
TO−225
MJE182G
TO−225
(Pb−Free)
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5
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
−B−
F
C
U
Q
M
−A−
INCHES
DIM MIN MAX
MILLIMETERS
1
2 3
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
A
B
C
D
F
0.425
0.295
0.095
0.020
0.115
0.435
0.305
0.105
0.026
0.130
H
K
G
H
J
0.094 BSC
2.39 BSC
0.050
0.015
0.575
5
0.095
0.025
0.655
1.27
0.39
14.61
5
2.41
0.63
16.63
J
K
M
Q
R
S
U
V
V
TYP
TYP
_
_
G
R
0.148
0.045
0.025
0.145
0.040
0.158
0.065
0.035
0.155
−−−
3.76
1.15
0.64
3.69
1.02
4.01
1.65
0.88
3.93
−−−
M
M
M
B
0.25 (0.010)
A
S
D 2 PL
M
M
M
0.25 (0.010)
A
B
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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