MJE18004D2BS [ONSEMI]
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SEMICONDUCTOR TECHNICAL DATA
POWER TRANSISTORS
5 AMPERES
1000 VOLTS
75 WATTS
The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an h
window.
FE
Main features:
•
•
•
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ I = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
C
•
•
•
Integrated Collector–Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic V
CE(sat)
“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
It’s characteristics make it also suitable for PFC application.
CASE 221A–06
TO–220AB
MAXIMUM RATINGS
Rating
Symbol
Value
450
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Collector–Emitter Sustaining Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
V
V
CEO
1000
1000
12
CBO
V
V
CES
EBO
Collector Current — Continuous
Collector Current — Peak (1)
I
C
5
10
I
CM
Base Current — Continuous
Base Current — Peak (1)
I
2
4
Adc
B
I
BM
*Total Device Dissipation @ T = 25 C
C
*Derate above 25°C
P
D
75
0.6
Watt
W/ C
Operating and Storage Temperature
T , T
–65 to 150
C
J
stg
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R
R
1.65
62.5
C/W
C
θJC
θJA
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
T
260
L
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(I = 100 mA, L = 25 mH)
C
V
450
1000
12
547
1100
14
Vdc
Vdc
CEO(sus)
Collector–Base Breakdown Voltage
V
V
CBO
EBO
CEO
(I
CBO
= 1 mA)
Emitter–Base Breakdown Voltage
(I = 1 mA)
Vdc
EBO
Collector Cutoff Current
(V = Rated V , I = 0)
I
100
µAdc
µAdc
CE CEO
B
Collector Cutoff Current (V
= Rated V
, V
CES EB
= 0)
@ T = 25°C
I
100
500
100
CE
C
CES
@ T = 125°C
C
Collector Cutoff Current (V
Emitter–Cutoff Current
= 500 V, V
= 0)
@ T = 125°C
C
CE
EB
I
100
µAdc
EBO
(V
EB
= 10 Vdc, I = 0)
C
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(I = 0.8 Adc, I = 80 mAdc)
V
Vdc
BE(sat)
@ T = 25°C
0.8
0.7
1
0.9
C
B
C
@ T = 125°C
C
(I = 2 Adc, I = 0.4 Adc)
@ T = 25°C
0.9
0.8
1
0.9
C
B
C
@ T = 125°C
C
Collector–Emitter Saturation Voltage
(I = 0.8 Adc, I = 80 mAdc)
V
Vdc
CE(sat)
@ T = 25°C
0.38
0.55
0.5
0.75
C
B
C
@ T = 125°C
C
(I = 2 Adc, I = 0.4 Adc)
@ T = 25°C
0.45
0.75
0.75
1
C
B
C
@ T = 125°C
C
(I = 0.8 Adc, I = 40 mAdc)
@ T = 25°C
0.9
1.6
1.5
C
B
C
@ T = 125°C
C
(I = 1 Adc, I = 0.2 Adc)
@ T = 25°C
0.25
0.28
0.5
0.6
C
B
C
@ T = 125°C
C
DC Current Gain
(I = 0.8 Adc, V
h
FE
—
= 1 Vdc)
@ T = 25°C
15
10
28
14
C
CE
C
@ T = 125°C
C
(I = 2 Adc, V
= 1 Vdc)
@ T = 25°C
6
4
8
6
C
CE
CE
C
@ T = 125°C
C
(I = 1 Adc, V
C
= 2.5 Vdc)
@ T = 25°C
18
14
28
20
C
@ T = 125°C
C
DYNAMIC SATURATION VOLTAGE
= 1 Adc
@ 1 µs
@ 3 µs
@ 1 µs
@ 3 µs
@ T = 25°C
V
9
16
V
C
CE(dsat)
I
C
@ T = 125°C
C
I
V
= 100 mA
Dynamic Saturation
Voltage:
B1
@ T = 25°C
3.1
9
C
= 300 V
CC
@ T = 125°C
C
Determined 1 µs and
3 µs respectively after
@ T = 25°C
11
18
C
rising I reaches
90% of final I
B1
I
= 2 Adc
= 0.4 A
= 300 V
B1
@ T = 125°C
C
C
I
B1
@ T = 25°C
1.4
8
C
V
CC
@ T = 125°C
C
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
DIODE CHARACTERISTICS
Forward Diode Voltage
V
EC
1.5
V
(I
= 1 Adc)
@ T = 25°C
0.96
0.72
EC
EC
C
@ T = 125°C
C
(I
= 2 Adc)
@ T = 25°C
1.15
0.8
1.7
C
@ T = 125°C
C
Forward Recovery Time
(I = 0.4 Adc, di/dt = 10 A/µs)
t
fr
440
ns
@ T = 25°C
F
C
(I = 1 Adc, di/dt = 10 A/µs)
@ T = 25°C
335
335
F
C
(I = 2 Adc, di/dt = 10 A/µs)
F
@ T = 25°C
C
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
f
13
60
MHz
pF
T
(I = 0.5 Adc, V
C CE
= 10 Vdc, f = 1 MHz)
Output Capacitance
C
100
750
ob
(V
CB
= 10 Vdc, I = 0, f = 1 MHz)
E
Input Capacitance
(I = 0.5 Adc, V
C
450
pF
ib
= 10 Vdc, f = 1 MHz)
C
CE
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)
Turn–on Time
Turn–off Time
Turn–on Time
@ T = 25°C
t
500
750
1.4
ns
µs
ns
I
= 2.5 Adc, I = 0.5 Adc
B1
C
on
C
I
= 1 Adc
B2
CC
@ T = 25°C
t
1.1
C
off
V
= 250 Vdc
@ T = 25°C
t
on
100
150
150
C
I
= 2 Adc, I = 0.4 Adc
@ T = 125°C
C
B1
C
I
= 1 Adc
= 300 Vdc
B2
Turn–off Time
Turn–on Time
Turn–off Time
@ T = 25°C
t
1.15
1.6
1.3
150
2.15
µs
ns
µs
C
off
V
CC
@ T = 125°C
C
@ T = 25°C
t
on
120
500
C
I
C
= 2.5 Adc, I = 0.5 Adc
B1
@ T = 125°C
C
I
= 0.5 Adc
= 300 Vdc
B2
@ T = 25°C
t
1.85
C
off
V
CC
@ T = 125°C
2.6
C
SWITCHING CHARACTERISTICS: Inductive Load (V
= 15 V)
CC
Fall Time
@ T = 25°C
t
130
300
175
2.4
500
150
2.4
450
90
ns
µs
ns
ns
µs
ns
ns
µs
ns
C
f
@ T = 125°C
I
= 2.5 Adc
= 500 mAdc
= 500 mAdc
C
C
I
I
B1
B2
V
Storage Time
Crossover Time
Fall Time
@ T = 25°C
t
t
2.12
2.6
C
s
@ T = 125°C
C
= 350 V
= 300 µH
Z
L
@ T = 25°C
355
750
C
C
c
@ T = 125°C
C
@ T = 25°C
t
f
95
230
C
@ T = 125°C
I
= 2 Adc
C
C
I
I
= 400 mAdc
= 400 mAdc
B1
B2
V
Storage Time
Crossover Time
Fall Time
@ T = 25°C
t
s
t
c
2.1
C
@ T = 125°C
2.9
C
= 300 V
= 200 µH
Z
L
@ T = 25°C
300
700
C
C
@ T = 125°C
C
@ T = 25°C
t
f
70
100
C
@ T = 125°C
I
= 1 Adc
C
C
I
I
= 100 mAdc
= 500 mAdc
B1
B2
V
Storage Time
Crossover Time
@ T = 25°C
t
0.7
1.05
0.9
120
C
s
c
@ T = 125°C
C
= 300 V
= 200 µH
Z
L
@ T = 25°C
t
75
160
C
C
@ T = 125°C
C
3
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
100
100
T
= 125°C
J
V
= 1 V
V
= 5 V
CE
CE
T
= –20°C
T = –20°C
J
J
T
= 25°C
T
= 25°C
J
J
10
10
T
= 125°C
J
1
0.001
1
0.001
0.01
0.1
1
10
10
10
0.01
0.1
1
10
10
10
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volt
3
10
T
= 25°C
J
T
= 125°C
I
/I = 5
J
C B
5 A
2
4 A
T
= 25°C
J
1
3 A
2 A
1
0
1 A
T
= –20
°
C
J
I
= 500 mA
C
0.1
0.001
0.01
0.1
1
0.01
0.1
1
I
, BASE CURRENT (mA)
I , COLLECTOR CURRENT (AMPS)
C
B
Figure 3. Collector Saturation Region
Figure 4. Collector–Emitter Saturation Voltage
10
10
T
= 125
°
C
I
/I = 20
T = 125°C
J
J
C B
I
/I = 10
C B
T
= –20°C
J
1
1
T
= 25°C
J
T
= 25°C
J
T
= –20°C
J
0.1
0.001
0.1
0.001
0.01
0.1
1
0.01
0.1
1
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 5. Collector–Emitter Saturation Voltage
Figure 6. Collector–Emitter Saturation Voltage
4
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
10
10
I
/I = 10
I
/I = 5
C B
C B
1
1
T
= –20°C
T
= –20°C
J
J
T
= 25°C
T
= 125°C
T
= 125°C
T = 25°C
J
J
J
J
0.1
0.001
0.1
0.001
0.01
0.1
1
10
0.01
0.1
1
10
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 7. Base–Emitter Saturation Region
Figure 8. Base–Emitter Saturation Region
10
10
I
/I = 20
C B
25°C
1
1
T
= –20°C
J
T
= 125°C
T = 25°C
J
J
125°C
0.1
0.001
0.1
0.01
0.01
0.1
1
10
0.1
1
10
I
, COLLECTOR CURRENT (AMPS)
REVERSE EMITTER–COLLECTOR CURRENT (AMPS)
C
Figure 9. Base–Emitter Saturation Region
Figure 10. Forward Diode Voltage
1000
100
10
1200
1000
C
(pF)
ib
T
= 25°C
T
f
= 25°C
C
J
= 1 MHz
BVCER @ ICER = 10 mA
(test)
800
600
C
ob
BVCER(sus) @
ICER = 200 mA,
Lc = 25 mH
1
10
, REVERSE VOLTAGE (VOLTS)
100
10
100
1000
V
BASE–EMITTER RESISTOR (
Ω)
R
Figure 11. Capacitance
Figure 12. BVCER = f(R
)
BE
5
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
3200
2400
1600
5
I
= I
= 300 V
T
T
= 125°C
= 25°C
Bon Boff
J
J
I
= I
= 300 V
Bon Boff
V
I
/I = 10
CC
PW = 20
C B
V
CC
PW = 20
µs
4
3
2
µs
I
/I = 10
C B
800
0
1
0
T
T
= 125°C
J
J
= 25°C
I
/I = 5
I
/I = 5
C B
C B
1
3
4
1
2
3
4
2
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 13. Resistive Switch Time, t
on
Figure 14. Resistive Switch Time, t
off
4
3
2
4
3
2
I
/I = 5
I
/I = 10
C B
C B
I
= I
I
= I
Bon Boff
Bon Boff
1
0
1
0
V
V
L
= 15 V
V
V
L
= 15 V
CC
= 300 V
CC
= 300 V
Z
T
T
= 125
°
C
T
T
= 125°C
J
J
J
J
Z
= 25°C
= 25°C
= 200
µH
= 200
µH
C
C
0
1
2
3
4
0
1
2
3
4
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 15. Inductive Storage Time,
@ I /I = 5
Figure 16. Inductive Storage Time,
@ I /I = 10
t
t
si
si
C B
C B
1000
800
600
400
1000
800
600
400
T
T
= 125
°
C
T
T
= 125°C
= 25°C
J
J
J
J
I
/I = 5
I
/I = 10
C B
C B
= 25°C
I
V
V
L
= I
I
V
V
= I
Boff Bon
Bon Boff
= 15 V
CC
t
= 15 V
c
CC
Z
C
= 300 V
= 300 V
Z
C
= 200
µH
L
= 200
µH
t
fi
200
0
200
0
0
1
2
3
4
0
1
2
3
4
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 17. Inductive Switching Time,
Figure 18. Inductive Switching Time,
@ I /I = 10
t & t @ I /I = 5
t
fi
c
fi C B
C B
6
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
1600
1200
800
5
I
/I = 10
I
V
V
= I
= 15 V
= 300 V
= 200 µH
C B
Bon Boff
CC
Z
C
T
T
= 125°C
= 25°C
I
V
V
= I
= 15 V
= 300 V
= 200 µH
J
J
Boff Bon
CC
Z
C
I
= 1 A
C
L
L
4
3
2
I
= 2 A
C
400
0
T
T
= 125°C
= 25°C
J
J
0
1
2
3
4
20
4
0
5
10
, FORCED GAIN
15
20
I
, COLLECTOR CURRENT (AMPS)
h
C
FE
Figure 19. Inductive Switching, t @ I /I = 10
C B
Figure 20. Inductive Storage Time
c
1000
800
600
400
2000
1500
1000
T
T
= 125°C
= 25°C
I
= I
= 15 V
= 300 V
= 200
I
= I
= 15 V
= 300 V
J
J
I
= 2 A
T
T
= 125°C
= 25°C
Boff Bon
V
V
Bon Boff
C
J
J
V
CC
CC
V
Z
Z
L
µH
L
= 200
µ
H
C
C
I
= 2 A
C
I
= 1 A
C
500
0
200
0
I
= 1 A
C
2
4
6
8
10
12
14
16
18
2
8
14
20
h
, FORCED GAIN
h
, FORCED GAIN
FE
FE
Figure 21. Inductive Fall Time
Figure 22. Inductive Crossover Time
4
3
420
380
340
300
I
V
V
= I
Bon Boff
dI/dt = 10 A/
µs
= 15 V
= 300 V
= 200 µH
CC
Z
C
T
= 25
°C
C
I
= 50 mA
B
L
2
1
I
= 100 mA
B
I
= 200 mA
B
I
= 500 mA
B
I
= 1 A
B
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
I
, COLLECTOR CURRENT (AMPS)
I , FORWARD CURRENT (AMP)
C
F
Figure 23. Inductive Storage Time, t
si
Figure 24. Forward Recovery Time, T
FR
7
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
10
V
CE
9
8
7
6
5
4
3
I
90% I
C
C
dyn 1
µs
t
fi
t
si
dyn 3 µs
10% I
0 V
C
V
10% V
clamp
clamp
t
c
90% I
B
I
90% I
B1
B
1 µs
2
1
0
I
B
3
µs
0
1
2
3
4
5
6
8
7
TIME
TIME
Figure 25. Dynamic Saturation
Voltage Measurements
Figure 26. Inductive Switching Measurements
V
FRM
V
(1.1 V unless otherwise specified)
F
FR
V
F
V
F
t
fr
0.1 V
F
0
I
F
10% I
F
0
2
4
6
8
10
Figure 27. t Measurements
fr
8
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V
I
PEAK
C
100 µF
1
µ
F
MTP8P10
MUR105
MJE210
100
3 W
Ω
150
3 W
Ω
V
PEAK
CE
MTP8P10
V
CE
MPF930
R
R
B1
I
1
B
I
MPF930
+10 V
out
I
B
A
I
2
B
50
Ω
B2
COMMON
V
Inductive Switching
RBSOA
L = 500
RB2 = 0
MTP12N10
(BR)CEO(sus)
L = 10 mH
RB2 =
150
3 W
Ω
L = 200
µH
µH
500 µF
∞
RB2 = 0
V
= 20 Volts
= 100 mA
V
= 15 Volts
V
= 15 Volts
CC
CC
CC
1 µF
I
RB1 selected for
desired Ib1
RB1 selected for
desired Ib1
C(pk)
–V
off
TYPICAL CHARACTERISTICS
100
10
6
T
≤ 125°C
≥ 5
= 2 mH
C
GAIN
5
1 µs
L
C
1 ms
10 µs
4
3
2
5 ms
EXTENDED
SOA
DC
1
–5 V
0.1
1
0
0 V
–1.5 V
0.01
10
100
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
200
400
600
800
1000
V
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 28. Forward Bias Safe Operating Area
Figure 29. Reverse Bias Safe Operating Area
9
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I –V
1.0
0.8
0.6
0.4
C
CE
SECOND
BREAKDOWN
DERATING
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate. The data of
Figure 28 is based on T = 25°C; T (pk) is variable
C
J
depending on power level. Second breakdown pulse limits
are valid for duty cycles to 10% but must be derated when
T
> 25°C. Second breakdown limitations do not derate the
C
same as thermal limitations. Allowable current at the
voltages shown on Figure 28 may be found at any case
temperature by using the appropriate curve on Figure 30.
THERMAL
DERATING
0.2
0
T (pk) may be calculated from the data in Figure 31. At
J
any case temperatures, thermal limitations will reduce the
power that can be handled to values less than the
limitations imposed by second breakdown. For inductive
loads, high voltage and current must be sustained simulta-
neously during turn–off with the base–to–emitter junction
reverse biased. The safe level is specified as a reverse–
biased safe operating area (Figure 29). This rating is
verified under clamped conditions so that the device is
never subjected to an avalanche mode.
20
40
60
80
100
120
C)
140
160
T
, CASE TEMPERATURE (
°
C
Figure 30. Forward Bias Power Derating
TYPICAL THERMAL RESPONSE
1
0.5
0.2
0.1
P
0.1
0.05
(pk)
R
R
(t) = r(t) R
θ
θ
θ
JC
JC
JC
°C/W MAX
= 2.5
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.02
t
1
READ TIME AT t
SINGLE PULSE
1
t
2
T
– T = P
R (t)
(pk) θJC
J(pk)
C
DUTY CYCLE, D = t /t
1 2
0.01
0.01
0.1
1
10
100
1000
t, TIME (ms)
Figure 31. Typical Thermal Response (Z
) for MJE18004D2
θJC(t)
10
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
L
R
J
V
G
T
U
V
D
N
Z
0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
11
Motorola Bipolar Power Transistor Device Data
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MJE18004D2/D
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