MJE340STU [ONSEMI]
中等功率 NPN 双极功率晶体管;
| 型号： | MJE340STU |
| 厂家： | 
ONSEMI |
| 描述： | 中等功率 NPN 双极功率晶体管 局域网 PC 晶体管 功率双极晶体管 |
| 文件： | 总4页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJE340
Plastic Medium−Power
NPN Silicon Transistor
This device is useful for high−voltage general purpose applications.
Features
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• Suitable for Transformerless, Line−Operated Equipment
• Thermopad Construction Provides High Power Dissipation Rating
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
for High Reliability
• Pb−Free Package is Available*
300 VOLTS, 20 WATTS
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Symbol
Value
300
Unit
Vdc
V
CEO
V
3.0
Vdc
EB
Collector Current − Continuous
I
500
mAdc
C
Total Power Dissipation @ T = 25_C
P
20
0.16
W
C
D
TO−225
CASE 77
STYLE 1
Derate above 25_C
mW/_C
_C
Operating and Storage Junction
Temperature Range
T , T
J
–65 to +150
stg
3
2
1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
q
6.25
_C/W
JC
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
YWW
JE340G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol Min Max
Unit
OFF CHARACTERISTICS
Y
WW
= Year
= Work Week
Collector−Emitter Sustaining Voltage
V
300
−
−
Vdc
mAdc
mAdc
CEO(sus)
(I = 1.0 mAdc, I = 0)
C
B
JE340 = Device Code
G
= Pb−Free Package
Collector Cutoff Current
(V = 300 Vdc, I = 0)
I
I
100
100
CBO
EBO
CB
E
Emitter Cutoff Current
(V = 3.0 Vdc, I = 0)
−
ORDERING INFORMATION
EB
C
ON CHARACTERISTICS
Device
Package
Shipping
DC Current Gain
(I = 50 mAdc, V = 10 Vdc)
C
h
FE
30
240
−
MJE340
TO−225
500 Units/Box
500 Units/Box
CE
TO−225
MJE340G
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 11
MJE340/D
MJE340
32
28
24
20
16
12
8.0
1.0
0.8
T = 25°C
J
V
@ I /I = 10
B
BE(sat)
C
V
@ V = 10 V
CE
BE
0.6
0.4
0.2
0
V
@ I /I = 10
C B
CE(sat)
MJE340
4.0
0
I /I = 5.0
C B
0
20
40
60
80
100
120
140
160
10
20 30
50
100
I , COLLECTOR CURRENT (mA)
200 300
500
T , CASE TEMPERATURE (°C)
C
C
Figure 2. “On” Voltages
Figure 1. Power Temperature Derating
ACTIVE−REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I − V
1.0
C
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.The data of Figure 3 is
10 ms
0.5
0.3
T = 150°C
J
500 ms
based on T
= 150_C; T is variable depending on
J(pk)
C
1.0ꢀms
0.2
dc
conditions. Second breakdown pulse limits are valid for
duty cycles to 10% provided T
v 150_C. At high case
0.1
J(pk)
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
0.05
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
0.03
0.02
THERMAL LIMIT T = 25°C
C
SINGLE PULSE
0.01
10
20
30
50
70 100
200 300
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 3. MJE340
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2
MJE340
2.0
10
7.0
T = 25°C
J
150°C
5.0
1.6
1.2
0.8
0.4
0
T = 25°C
J
V
= 1.0 Vdc
CE
3.0
2.0
−ꢁ55°C
1.0
0.7
0.5
V
@ I /I = 10
B
BE(sat)
C
V
@ V = 1.0 V
CE
BE(on)
0.3
0.2
V
@ I /I = 10
C B
CE(sat)
0.1
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
1.0
2.0 3.04.0
0.005 0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
1.0 2.0 3.04.0
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 4. DC Current Gain
Figure 5. “On” Voltage
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
P
(pk)
q
q
(t) = r(t) q
JC
JC
0.1
0.05
0.02
= 3.12°C/W MAX
JC
0.1
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
t
2
1
T
− T = P q
C
(t)
J(pk)
(pk) JC
0.03
0.02
0.01
DUTY CYCLE, D = t /t
1
2
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20
50
100
200
500
1000
t, TIME OR PULSE WIDTH (ms)
Figure 6. Thermal Response
300
200
V
V
= 10 V
= 2.0 V
CE
CE
T = 150°C
J
100
70
+100°C
50
+
25 °C
−ꢁ55°C
2.0
30
20
10
1.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
500
I , COLLECTOR CURRENT (mAdc)
C
Figure 7. DC Current Gain
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3
MJE340
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
−B−
F
C
U
Q
M
−A−
INCHES
DIM MIN MAX
MILLIMETERS
1
2 3
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
A
B
C
D
F
0.425
0.295
0.095
0.020
0.115
0.435
0.305
0.105
0.026
0.130
H
K
G
H
J
0.094 BSC
2.39 BSC
0.050
0.015
0.575
5
0.095
0.025
0.655
1.27
0.39
14.61
5
2.41
0.63
J
K
M
Q
R
S
U
V
16.63
V
TYP
TYP
_
_
G
R
0.148
0.045
0.025
0.145
0.040
0.158
0.065
0.035
0.155
−−−
3.76
1.15
0.64
3.69
1.02
4.01
1.65
0.88
3.93
−−−
M
M
M
B
0.25 (0.010)
A
S
D 2 PL
M
M
M
0.25 (0.010)
A
B
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MJE340/D
相关型号：
MJE341LEADFREE
Power Bipolar Transistor, 0.5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
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