MJE5730G [ONSEMI]
High Voltage PNP Silicon Plastic Power Transistors; 高电压PNP硅塑料功率晶体管
| 型号： | MJE5730G |
| 厂家： | 
ONSEMI |
| 描述： | High Voltage PNP Silicon Plastic Power Transistors |
| 文件： | 总5页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJE5730, MJE5731,
MJE5731A
High Voltage PNP Silicon
Plastic Power Transistors
These devices are designed for line operated audio output amplifier,
SWITCHMODEt power supply drivers and other switching
applications.
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1.0 AMPERE
POWER TRANSISTORS
PCP SILICON
300−350−400 VOLTS
50 WATTS
Features
• 300 V to 400 V (Min) − V
CEO(sus)
• 1.0 A Rated Collector Current
• Popular TO−220 Plastic Package
• PNP Complements to the TIP47 thru TIP50 Series
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
MJE5730
MJE5731
MJE5731A
V
300
350
375
Vdc
CEO
TO−220AB
CASE 221A−09
Collector−Base Voltage
MJE5730
MJE5731
MJE5731A
V
300
350
375
Vdc
CB
EB
1
STYLE 1
2
3
Emitter−Base Voltage
V
5.0
Vdc
Adc
Collector Current − Continuous
− Peak
I
1.0
3.0
C
I
CM
Base Current
I
1.0
Adc
B
MARKING DIAGRAM
Total Device Dissipation @ T = 25_C
P
40
0.32
W
C
D
Derate above 25°C
W/_C
W
W/_C
mJ
Total Device Dissipation @ T = 25_C
P
2.0
0.016
C
D
Derate above 25°C
Unclamped Inducting Load Energy
(See Figure 10)
E
20
Operating and Storage Junction
Temperature Range
T , T
−65 to +150
_C
J
stg
MJE573xG
AY WW
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
3.125
62.5
Unit
_C/W
_C/W
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
q
JC
R
q
JA
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MJE573x = Device Code
x = 0, 1, or 1A
G
A
Y
= Pb−Free Package
= Assembly Location
= Year
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 5
MJE5730/D
T = 25°C
J
−55°C
MJE5730, MJE5731, MJE5731A
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) (I = 30 mAdc, I = 0) MJE5730
V
CEO(sus)
300
350
375
−
−
−
Vdc
C
B
MJE5731
MJE5731A
Collector Cutoff Current
Collector Cutoff Current
(V = 200 Vdc, I = 0)
MJE5730
MJE5731
MJE5731A
I
CEO
−
−
−
1.0
1.0
1.0
mAdc
mAdc
mAdc
CE
B
(V = 250 Vdc, I = 0)
CE
B
(V = 300 Vdc, I = 0)
CE
B
(V = 300 Vdc, V = 0)
MJE5730
MJE5731
MJE5731A
I
−
−
−
1.0
1.0
1.0
CE
BE
CES
EBO
(V = 350 Vdc, V = 0)
CE
BE
(V = 400 Vdc, V = 0)
CE
BE
Emitter Cutoff Current (V = 5.0 Vdc, I = 0)
I
−
1.0
BE
ON CHARACTERISTICS (Note 1)
DC Current Gain
C
h
FE
(I = 0.3 Adc, V = 10 Vdc)
C
CE
30
10
150
−
−
(I = 1.0 Adc, V = 10 Vdc)
C
CE
Collector−Emitter Saturation Voltage (I = 1.0 Adc, I = 0.2 Adc)
V
CE(sat)
−
−
1.0
1.5
Vdc
Vdc
C
B
Base−Emitter On Voltage (I = 1.0 Adc, V = 10 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (I = 0.2 Adc, V = 10 Vdc, f = 2.0 MHz)
f
T
10
25
−
−
MHz
−
C
CE
Small−Signal Current Gain (I = 0.2 Adc, V = 10 Vdc, f = 1.0 kHz)
h
fe
C
CE
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
1.4
1.2
200
V
= 10 V
CE
100
T = 150°C
J
25°C
1
0.8
0.6
0.4
0.2
0
50
30
20
10
−ꢀ55°C
150°C
5.0
V
@ I /I = 5.0
C B
CE(sat))
3.0
2.0
0.02 0.03 0.05
0.1
0.2 0.3
I , COLLECTOR CURRENT (AMPS)
0.5
1.0
2.0
0.02 0.03 0.05
0.1
0.2 0.3
I , COLLECTOR CURRENT (AMPS)
0.5
1.0
2.0
C
C
Figure 1. DC Current Gain
Figure 2. Collector−Emitter Saturation Voltage
1.4
1.0
0.8
SECOND BREAKDOWN
DERATING
1.2
1.0
0.8
0.6
0.4
0.2
0
T = − 55°C
J
V
@ I /I = 5.0
C B
BE(sat)
0.6
0.4
0.2
0
THERMAL
DERATING
25°C
150°C
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0
0
25
50
75
100
125
150
175
I , COLLECTOR CURRENT (AMPS)
C
T , CASE TEMPERATURE (°C)
C
Figure 3. Base−Emitter Voltage
Figure 4. Normalized Power Derating
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2
MJE5730, MJE5731, MJE5731A
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I − V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
5.0
C
CE
2.0
1.0
0.5
100 ms
1.0ꢁms
dc
500 ms
T
= 25°C
C
The data of Figure 5 is based on T
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
= 150_C; T is
J(pk)
C
0.2
0.1
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.05
T
v 150_C. T
may be calculated from the data in
J(pk)
J(pk)
MJE5730
MJE5731
MJE5732
Figure 6. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.02
0.01
5.0
10
20 30
50
100
200 300 500
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 5. Forward Bias Safe Operating Area
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
P
(pk)
R
R
= r(t) R
q
JC
q
q
JC(t)
0.07
= 3.125°C/W MAX
JC
0.05
0.02
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
0.03
0.02
t
2
1
0.01
T
− T = P q
C (pk) JC(t)
J(pk)
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.02
0.01
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1 k
t, TIME (ms)
Figure 6. Thermal Response
TURN−ON PULSE
t
1
V
BE(off)
V
in
0 V
V
CC
R
R
C
APPROX
.
−11 V
SCOPE
t ≤ 7.0 ns
1
100 ≤ t < 500 ms
2
t < 15 ns
B
3
V
in
t
2
t
3
C
<< C
51
jd
eb
+ꢀ4.0 V
APPROX. +ꢀ9.0 V
DUTY CYCLE ≈ 2.0%
TURN−OFF PULSE
Figure 7. Switching Time Equivalent Circuit
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3
MJE5730, MJE5731, MJE5731A
5.0
1.0
0.5
T = 25°C
J
t
s
3.0
2.0
T = 25°C
J
t
r
V = 200 V
CC
I /I = 5.0
V = 200 V
CC
I /I = 5.0
C B
0.3
0.2
C B
t
f
t
d
1.0
0.5
0.1
0.3
0.2
0.05
0.03
0.02
0.1
0.01
0.05
0.02 0.03
0.1
0.2 0.3
0.5
1.0
2.0
0.02
0.1
0.2 0.3
0.5
1.0
2.0
0.05
0.03 0.05
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 8. Turn−On Resistive Switching Times
Test Circuit
Figure 9. Resistive Turn−Off Switching Times
Voltage and Current Waveforms
t
≈ 3 ms
(SEE NOTE 1)
w
V
MONITOR
CE
0 V
−ꢀ5 V
INPUT
VOLTAGE
R
=
BB1
TUT
MJE171
100 mH
150 W
100 ms
50
50
+
−
V
= 20 V
CC
INPUT
0.63 A
I
C
MONITOR
COLLECTOR
CURRENT
R
=
BB2
0 V
100 W
R
=
V
0
=
V
CER
S
+
−
BB2
V
= 10 V
0.1 W
BB1
COLLECTOR
VOLTAGE
10 V
V
CE(sat)
Figure 10. Inductive Load Switching
ORDERING INFORMATION
Device
Package
Shipping
MJE5730
TO−220
MJE5730G
TO−220
(Pb−Free)
MJE5731
TO−220
50 Units / Rail
MJE5731G
TO−220
(Pb−Free)
MJE5731A
TO−220
MJE5731AG
TO−220
(Pb−Free)
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4
MJE5730, MJE5731, MJE5731A
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
B
F
T
S
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
1
2
3
U
H
G
H
J
K
L
L
R
N
Q
R
S
T
V
J
G
D
U
V
Z
N
−−− 0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MJE5730/D
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