MJF31C_08 [ONSEMI]
Complementary Silicon Plastic Power Transistors; 互补硅塑料功率晶体管
| 型号： | MJF31C_08 |
| 厂家： | 
ONSEMI |
| 描述： | Complementary Silicon Plastic Power Transistors |
| 文件： | 总5页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJF31C (NPN),
MJF32C (PNP)
Preferred Device
Complementary Silicon
Plastic Power Transistors
for Isolated Package
Applications
http://onsemi.com
3.0 AMPERE
Designed for use in general purpose amplifier and switching
applications.
POWER TRANSISTORS
COMPLEMENTARY SILICON
100 VOLTS, 28 WATTS
Features
• Collector−Emitter Saturation Voltage −
V
CE(sat)
= 1.2 Vdc (Max) @ I = 3.0 Adc
C
4
• Collector−Emitter Sustaining Voltage −
= 100 Vdc (Min)
V
CEO(sus)
TO−220 FULLPAK
CASE 221D
• High Current Gain − Bandwidth Product
f = 3.0 MHz (Min) @ I = 500 mAdc
T
C
STYLE 2
• UL Recognized, File #E69369, to 3500 V
• Pb−Free Packages are Available*
Isolation
RMS
1
2
3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
100
100
5.0
Unit
Vdc
Vdc
Vdc
Adc
MARKING DIAGRAM
V
CEO
V
CB
EB
V
Collector CurrentUnclamped Inductive
Load Energy (Note 1)
− Continuous
I
C
3.0
5.0
MJF3xCG
AYWW
− Peak
Base Current
I
B
1.0
Adc
Total Power Dissipation @ T = 25_C
P
28
W
C
D
0.22
W/_C
Derate above 25_C
Total Power Dissipation @ T = 25_C
P
D
2.0
0.016
W
A
Derate above 25_C
W/_C
x
= 1 or 2
G
A
Y
= Pb−Free Package
= Assembly Location
= Year
Unclamped Inductive Load Energy (Note 1)
E
32
mJ
Operating and Storage Junction
Temperature Range
T , T
–65 to +150
_C
J
stg
WW = Work Week
THERMAL CHARACTERISTICS
Characteristic
ORDERING INFORMATION
Symbol
Max
62.5
4.46
Unit
°C/W
°C/W
Device
MJF31C
MJF31CG
Package
Shipping
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
R
q
JC
TO−220 FULLPAK
50 Units/Rail
50 Units/Rail
R
q
JC
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
TO−220 FULLPAK
(Pb−Free)
MJF32C
TO−220 FULLPAK
50 Units/Rail
50 Units/Rail
MJF32CG
TO−220 FULLPAK
(Pb−Free)
1. I = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V = 10 V, R = 100 W.
C
CC
BE
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
July, 2008 − Rev. 5
MJF31C/D
MJF31C (NPN), MJF32C (PNP)
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
V
Vdc
CEO(sus)
(I = 30 mAdc, I = 0)
C
B
100
−
Collector Cutoff Current
(I = 3.0 Adc, V = 4.0 Vdc)
I
mAdc
CEO
−
−
−
0.3
200
1.0
C
CE
Collector Cutoff Current
I
mAdc
CES
Emitter Cutoff Current (V = 5.0 Vdc, I = 0)
I
mAdc
BE
C
EBO
ON CHARACTERISTICS (Note 2)
DC Current Gain (I = 1.0 Adc, V = 4.0 Vdc)
h
FE
25
10
−
50
−
C
CE
(I = 3.0 Adc, V = 4.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage (I = 3.0 Adc, I = 375 mAdc)
V
CE(sat)
−
−
1.2
1.8
Vdc
Vdc
C
B
Base−Emitter On Voltage (I = 3.0 Adc, V = 4.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (I = 500 mAdc, V = 10 Vdc, f
= 1.0 MHz)
f
T
3.0
20
−
−
MHz
C
CE
test
Small−Signal Current Gain (I = 0.5 Adc, V = 10 Vdc, f = 1.0 kHz)
h
fe
−
C
CE
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
T
T
A
40 4.0
C
30 3.0
T
C
20 2.0
10 1.0
T
A
0
0
0
20
40
60
100
120
140
160
80
T, TEMPERATURE (°C)
Figure 1. Power Derating
TURN-ON PULSE
APPROX
+11 V
V
CC
2.0
1.0
R
C
I /I = 10
C B
T = 25°C
J
SCOPE
V
in
0.7
V 0
in
t @ V = 30 V
CC
r
R
B
0.5
0.3
V
EB(off)
t
1
t @ V = 10 V
CC
r
C
jd
<< C
eb
t
3
APPROX
+11 V
-ꢀ4.0 V
t ≤ 7.0 ns
1
0.1
100 < t < 500 ms
2
t < 15 ns
0.07
0.05
V
in
t @ V
d
= 2.0 V
3
EB(off)
0.03
0.02
t
DUTY CYCLE ≈ 2.0%
APPROX -ꢀ9.0 V
2
TURN-OFF PULSE
0.03 0.05 0.07 0.1
0.3
0.5 0.7 1.0
3.0
R and R VARIED TO OBTAIN DESIRED CURRENT LEVELS
B C
I , COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Time Equivalent Circuit
Figure 3. Turn−On Time
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2
MJF31C (NPN), MJF32C (PNP)
1.0
0.7
D = 0.5
0.2
0.5
0.3
0.2
0.1
0.1
0.07
0.05
P
(pk)
Z
= r(t) R
q
JC
q
JC(t)
0.05
R
(t) = 3.125°C/W MAX
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
t
1
0.03
0.02
t
1
2
0.01
0.02
T
- T = P
C
Z
q
(pk) JC(t)
J(pk)
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.05 1.0
0.01
0.01
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
t, TIME (ms)
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
5.0
breakdown. Safe operating area curves indicate I − V
C
CE
100ꢂms
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
5.0ꢂms
2.0
1.0ꢂms
SECONDARY BREAKDOWN
LIMITED @ T ≤ 150°C
THERMAL LIMIT @ T = 25°C
(SINGLE PULSE)
BONDING WIRE LIMIT
MJF31C,
1.0
0.5
The data of Figure 5 is based on T
variable depending on conditions. Second breakdown pulse
= 150_C; T is
J(pk)
C
J
C
limits are valid for duty cycles to 10% provided T
J(pk)
v 150_C. T
may be calculated from the data in
J(pk)
0.2
0.1
CURVES APPLY
BELOW RATED V
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
MJF32C
CEO
5.0
10
20
50
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
3.0
300
I
= I
B1 B2
I /I = 10
2.0
T = +ꢀ25°C
J
C B
t ′
s
200
t ′ = t - 1/8 t
f
s
s
1.0
t @ V = 30 V
f CC
T = 25°C
J
0.7
0.5
100
0.3
0.2
t @ V = 10 V
f CC
C
eb
70
50
0.1
0.07
0.05
C
cb
0.03
30
0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30 40
I , COLLECTOR CURRENT (AMP)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Turn−Off Time
Figure 7. Capacitance
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3
MJF31C (NPN), MJF32C (PNP)
500
300
2.0
T = 25°C
J
T = 150°C
J
V
CE
= 2.0 V
1.6
1.2
0.8
0.4
0
25°C
100
70
I = 0.3 A
C
1.0 A
3.0 A
-ꢀ55°C
50
30
10
7.0
5.0
0.03 0.05 0.07 0.1
0.3
0.5 0.7 1.0
3.0
1.0
2.0
5.0
10
20
50
100 200
500 1000
I , COLLECTOR CURRENT (AMP)
C
I , BASE CURRENT (mA)
B
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
1.4
1.2
1.0
0.8
+ꢀ2.5
+ꢀ2.0
+ꢀ1.5
T = 25°C
J
*APPLIES FOR I /I ≤ h /2
T = -ꢀ65°C TO +ꢀ150°C
J
C B
FE
+ꢀ1.0
+ꢀ0.5
0
*q FOR V
VC
CE(sat)
V
@ I /I = 10
C B
BE(sat)
0.6
0.4
0.2
0
-ꢀ0.5
-ꢀ1.0
-ꢀ1.5
V
@ V = 2.0 V
CE
BE
q
FOR V
BE
VB
V
@ I /I = 10
C B
CE(sat)
-ꢀ2.0
-ꢀ2.5
0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
0.003 0.005 0.01 0.02
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
3
2
1
0
7
10
10
10
10
10
V
= 30 V
CE
V
CE
= 30 V
I = 10 x I
C
CES
6
10
T = 150°C
J
I
C
≈ I
CES
5
10
100°C
4
10
I = 2 x I
C
CES
-1
-2
-3
REVERSE
FORWARD
10
10
10
3
10
(TYPICAL I VALUES
CES
OBTAINED FROM FIGURE 12)
25°C
I
CES
2
10
-ꢀ0.4 -ꢀ0.3 -ꢀ0.2 -ꢀ0.1
0
+ꢀ0.1 +ꢀ0.2 +ꢀ0.3 +ꢀ0.4 +ꢀ0.5 +ꢀ0.6
20
40
60
80
100
120
140
160
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
J
Figure 12. Collector Cut−Off Region
Figure 13. Effects of Base−Emitter Resistance
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4
MJF31C (NPN), MJF32C (PNP)
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
SEATING
PLANE
−T−
−B−
C
F
S
Q
H
INCHES
DIM MIN MAX
0.635 15.67
MILLIMETERS
U
MIN
MAX
16.12
10.63
4.90
A
A
B
C
D
F
0.617
0.392
0.177
0.024
0.116
0.419
0.193
0.039
0.129
9.96
4.50
0.60
2.95
1
2 3
1.00
3.28
−Y−
G
H
J
0.100 BSC
2.54 BSC
3.00
0.45
K
0.118
0.018
0.503
0.048
0.135
0.025
3.43
0.63
13.73
1.47
K
L
0.541 12.78
1.23
0.058
G
N
J
N
Q
R
S
U
0.200 BSC
5.08 BSC
R
0.122
0.099
0.092
0.239
0.138
0.117
0.113
0.271
3.10
2.51
2.34
6.06
3.50
2.96
2.87
6.88
L
D 3 PL
STYLE 2:
PIN 1. BASE
M
M
0.25 (0.010)
B
Y
2. COLLECTOR
3. EMITTER
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MJF31C/D
相关型号：
MJF32C
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
MOTOROLA
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