MJH11020G [ONSEMI]
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS; 15安培达林顿互补硅功率晶体管150〜250伏， 150瓦
| 型号： | MJH11020G |
| 厂家： | 
ONSEMI |
| 描述： | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS |
| 文件： | 总6页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJH11017, MJH11019,
MJH11021ꢀ(PNP)
MJH11018, MJH11020,
MJH11022ꢀ(NPN)
Preferred Device
Complementary Darlington
Silicon Power Transistors
http://onsemi.com
These devices are designed for use as general purpose amplifiers,
low frequency switching and motor control applications.
15 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
Features
• High DC Current Gain @ 10 Adc — h = 400 Min (All Types)
FE
150−250 VOLTS, 150 WATTS
• Collector−Emitter Sustaining Voltage
MARKING
DIAGRAM
V
= 150 Vdc (Min) — MJH11018, 17
CEO(sus)
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21
• Low Collector−Emitter Saturation Voltage
V
CE(sat)
= 1.2 V (Typ) @ I = 5.0 A
C
SOT−93
(TO−218)
= 1.8 V (Typ) @ I = 10 A
C
AYWWG
MJH110xx
CASE 340D
STYLE 1
• Monolithic Construction
• Pb−Free Packages are Available*
MAXIMUM RATINGS
A
Y
= Assembly Location
= Year
Rating
Symbol
Max
Unit
WW
G
= Work Week
= Pb−Free Package
Collector−Emitter Voltage
V
Vdc
CEO
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
150
200
250
MJH110xx = Device Code
xx = 17, 19, 21, 18, 20, 22
Collector−Base Voltage
V
Vdc
CB
ORDERING INFORMATION
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
150
200
250
Device
Package
Shipping
MJH11017
SOT−93
30 Units / Rail
30 Units / Rail
Emitter−Base Voltage
V
5.0
Vdc
Adc
EB
MJH11017G
SOT−93
(Pb−Free)
Collector Current − Continuous
− Peak (Note 1)
I
15
30
C
B
MJH11018
SOT−93
30 Units / Rail
30 Units / Rail
Base Current
I
0.5
Adc
MJH11018G
SOT−93
(Pb−Free)
Total Device Dissipation @ T = 25_C
P
150
1.2
W
C
D
Derate above 25_C
W/_C
_C
MJH11019
SOT−93
30 Units / Rail
30 Units / Rail
Operating and Storage Junction Temperature T , T
–ꢀ65 to
+ꢀ150
J
stg
MJH11019G
SOT−93
(Pb−Free)
Range
THERMAL CHARACTERISTICS
MJH11020
SOT−93
30 Units / Rail
30 Units / Rail
Characteristic
Symbol
Max
Unit
MJH11020G
SOT−93
(Pb−Free)
Thermal Resistance, Junction−to−Case
R
0.83
_C/W
q
JC
MJH11021
SOT−93
30 Units / Rail
30 Units / Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
MJH11021G
SOT−93
(Pb−Free)
MJH11022
SOT−93
30 Units / Rail
30 Units / Rail
MJH11022G
SOT−93
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
July, 2006 − Rev. 6
MJH11017/D
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
T , CASE TEMPERATURE (°C)
C
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
V
Vdc
CEO(sus)
(I = 0.1 Adc, I = 0)
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
C
B
150
200
250
−
−
−
Collector Cutoff Current
(V = 75 Vdc, I = 0)
I
mAdc
mAdc
CEO
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
CE
B
−
−
−
1.0
1.0
1.0
(V = 100 Vdc, I = 0)
CE
B
(V = 125 Vdc, I = 0)
CE
B
Collector Cutoff Current
(V = Rated V , V
I
CEV
= 1.5 Vdc)
= 1.5 Vdc, T = 150_C)
CE
CB
BE(off)
BE(off)
−
−
0.5
5.0
(V = Rated V , V
CE
CB
J
Emitter Cutoff Current (V = 5.0 Vdc I = 0)
I
−
2.0
mAdc
−
BE
ON CHARACTERISTICS (Note 2)
DC Current Gain
C
EBO
h
FE
(I = 10 Adc, V = 5.0 Vdc)
400
100
15,000
−
C
CE
(I = 15 Adc, V = 5.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 10 Adc, I = 100 mA)
V
Vdc
CE(sat)
−
−
2.5
4.0
C
B
(I = 15 Adc, I = 150 mA)
C
B
Base−Emitter On Voltage (I = 10 A, V = 5.0 Vdc)
V
−
−
2.8
3.8
Vdc
Vdc
C
CE
BE(on)
V
BE(sat)
Base−Emitter Saturation Voltage (I = 15 Adc, I = 150 mA)
C
B
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product (I = 10 Adc, V = 3.0 Vdc, f = 1.0 MHz)
f
3.0
−
−
C
CE
T
Output Capacitance
(V = 10 Vdc, I = 0, f = 0.1 MHz)
MJH11018, MJH11020, MJH11022
MJH11017, MJH11019, MJH11021
C
ob
−
−
400
600
pF
CB
E
Small−Signal Current Gain (I = 10 Adc, V = 3.0 Vdc, f = 1.0 kHz)
h
fe
75
−
−
C
CE
SWITCHING CHARACTERISTICS
Typical
Characteristic
Symbol
NPN
PNP
Unit
Delay Time
Rise Time
Storage Time
Fall Time
t
150
75
ns
d
t
1.2
4.4
2.5
0.5
2.7
2.5
ms
ms
ms
r
(V = 100 V, I = 10 A, I = 100 mA
CC
C
B
V
= 5.0 V) (See Figure 2)
BE(off)
t
s
t
f
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
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2
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
V
CC
100 V
R
C
SCOPE
TUT
R
& R varied to obtain desired current levels
V2
APPROX
+12 V
0
R
B
C
B
D , must be fast recovery types, e.g.:
1
1N5825 used above I ≈ 100 mA
B
MSD6100 used below I ≈ 100 mA
51
D
1
B
V1
APPROX
−ꢀ8.0 V
+ꢀ4.0 V
25 ms
For t and t , D is disconnected
d
r
1
and V2 = 0
t , t ≤ 10 ns
r
f
Duty Cycle = 1.0%
For NPN test circuit, reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
P
(pk)
R
R
(t) = r(t) R
q
JC
0.1
0.07
0.05
q
q
JC
0.05
0.02
= 0.83°C/W MAX
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
0.03
0.02
0.01
t
1
2
T
− T = P
C
R
(t)
q
JC
SINGLE PULSE
J(pk)
(pk)
DUTY CYCLE, D = t /t
1 2
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20 30
50
100
200 300 500
1000
Figure 3. Thermal Response
FORWARD BIAS
T
C
= 25°C SINGLE PULSE
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
30
20
0.1 ms
breakdown. Safe operating area curves indicate I − V
C
CE
10
0.5 ms
1.0 ms
5.0 ms
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
5.0
2.0
1.0
0.5
dc
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The data of Figure 4 is based on T
variable depending on conditions. Second breakdown pulse
= 150_C; T is
J(pk)
C
limits are valid for duty cycles to 10% provided T
J(pk)
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
v 150_C. T
may be calculated from the data in
0.2
0
J(pk)
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
2.0 3.0 5.0 10
20 30 50
100 150 250
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 4. Maximum Rated Forward Bias
Safe Operating Area (FBSOA)
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3
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
REVERSE BIAS
30
20
10
0
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
L = 200 mH
I /I ≥ 50
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives RBSOA characteristics.
C B1
T
= 100°C
BE(off)
C
V
R
= 0ꢀ−ꢀ5.0 V
= 47 W
BE
DUTY CYCLE = 10%
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
0
20
60
100
140
180
220
260
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 5. Maximum Rated Reverse Bias
Safe Operating Area (RBSOA)
PNP
NPN
000
000
000
10,000
5000
V
= 5.0 V
V
= 5.0 V
CE
CE
T
= 150°C
25°C
000
000
C
T
= 150°C
2000
1000
500
C
000
500
25°C
−ꢀ55°C
−ꢀ55°C
200
00
200
100
0.2 0.3
0.5 0.7 1.0
3.0
5.0
10 15
0.2 0.3
0.5 0.7 1.0
3.0
5.0 7.0 10 15
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 6. DC Current Gain
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4
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
PNP
NPN
4.5
4.0
3.5
3.0
2.5
2.0
4.5
T = 25°C
J
T = 25°C
J
4.0
3.5
3.0
I
= 15 A
= 10 A
C
2.5
2.0
I
C
= 15 A
I
C
I
= 10 A
C
1.5
1.0
1.5
1.0
I
C
= 5.0 A
I
C
= 5.0 A
1.0 2.0 3.0 5.0
10
20 30 50 100 200300 500 1000
1.0 2.0 3.0 5.0
10
20 30 50 100 200300 500 1000
I , BASE CURRENT (mA)
B
I , BASE CURRENT (mA)
B
Figure 7. Collector Saturation Region
PNP
NPN
4.0
4.0
3.5
3.0
2.5
2.0
1.5
T = 25°C
J
3.5
T = 25°C
J
3.0
2.5
V
@ I /I = 100
C B
V
@ I /I = 100
BE(sat) C B
BE(sat)
2.0
1.5
V
@ V = 5.0 V
CE
BE
V
@ V = 5.0 V
CE
BE
1.0
0.5
1.0
0.5
V
@ I /I = 100
C B
V
@ I /I = 100
C B
CE(sat)
CE(sat)
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
0.2
0.5 0.7 1.0
2.0
5.0
10
20
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 8. “On” Voltages
PNP
NPN
MJH11018
MJH11020
MJH11022
MJH11017
MJH11019
MJH11021
COLLECTOR
COLLECTOR
BASE
BASE
EMITTER
EMITTER
Figure 9. Darlington Schematic
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5
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
NOTES:
C
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
Q
B
E
MILLIMETERS
INCHES
MIN MAX
−−− 0.801
DIM MIN
MAX
U
4
A
B
C
D
E
G
H
J
−−− 20.35
14.70
15.20
4.90
1.30
1.37
5.55
3.00
0.78
0.579
0.598
0.193
0.051
0.054
0.219
0.118
0.031
A
4.70
1.10
1.17
5.40
2.00
0.50
0.185
0.043
0.046
0.213
0.079
0.020
L
S
1
2
3
K
K
L
31.00 REF
−−− 16.20
1.220 REF
−−− 0.638
Q
S
U
V
4.00
17.80
4.10
18.20
0.158
0.701
0.161
0.717
4.00 REF
1.75 REF
0.157 REF
0.069
J
H
D
STYLE 1:
PIN 1. BASE
V
2. COLLECTOR
3. EMITTER
4. COLLECTOR
G
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MJH11017/D
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