MJH6287G [ONSEMI]
DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS; 达林顿20安培互补硅功率晶体管100伏特， 160瓦
| 型号： | MJH6287G |
| 厂家： | 
ONSEMI |
| 描述： | DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS |
| 文件： | 总5页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJH6284ꢀ(NPN),
MJH6284ꢀ(PNP)
Preferred Device
Darlington Complementary
Silicon Power Transistors
These devices are designed for general−purpose amplifier and
low−speed switching motor control applications.
http://onsemi.com
Features
DARLINGTON 20 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
100 VOLTS, 160 WATTS
• Similar to the Popular NPN 2N6284 and the PNP 2N6287
• Rugged RBSOA Characteristics
• Monolithic Construction with Built−in Collector−Emitter Diode
• Pb−Free Packages are Available*
MAXIMUM RATINGS
MARKING
DIAGRAM
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Max
100
100
5.0
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
V
CB
EB
V
SOT−93
(TO−218)
AYWWG
MJH628x
Collector Current − Continuous
− Peak
I
20
40
C
CASE 340D
Base Current
I
0.5
Adc
B
Total Device Dissipation @ T = 25_C
P
160
1.28
W
C
D
Derate above 25_C
W/_C
_C
Operating and Storage Junction
Temperature Range
T , T
J
–ꢀ65 to +ꢀ150
stg
A
Y
= Assembly Location
= Year
THERMAL CHARACTERISTICS
WW
G
= Work Week
= Pb−Free Package
Characteristic
Symbol
Max
Unit
MJH628x = Device Code
x = 4 or 7
Thermal Resistance, Junction−to−Case
R
0.78
_C/W
q
JC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping
160
140
MJH6284
SOT−93
30 Units / Rail
30 Units / Rail
MJH6284G
SOT−93
(Pb−Free)
120
100
80
MJH6287
SOT−93
30 Units / Rail
30 Units / Rail
MJH6287G
SOT−93
(Pb−Free)
60
Preferred devices are recommended choices for future use
and best overall value.
40
20
0
0
25
50
75
100
125
150
175
200
T , CASE TEMPERATURE (°C)
C
Figure 1. Power Derating
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
July, 2006 − Rev. 5
MJH6284/D
MJH6284 (NPN), MJH6284 (PNP)
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I = 0.1 Adc, I = 0)
V
CEO(sus)
100
−
−
Vdc
C
B
Collector Cutoff Current (V = 50 Vdc, I = 0)
I
CEO
1.0
mAdc
mAdc
CE
B
Collector Cutoff Current
(V = Rated V , V
I
CEX
= 1.5 Vdc)
= 1.5 Vdc, T = 150_C)
CE
CB
BE(off)
BE(off)
−
−
0.5
5.0
(V = Rated V , V
CE
CB
C
Emitter Cutoff Current (V = 5.0 Vdc, I = 0)
I
−
2.0
mAdc
−
BE
ON CHARACTERISTICS (Note 1)
DC Current Gain
C
EBO
h
FE
(I = 10 Adc, V = 3.0 Vdc)
750
100
18,000
−
C
CE
(I = 20 Adc, V = 3.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 10 Adc, I = 40 mAdc)
V
Vdc
CE(sat)
−
−
2.0
3.0
C
B
(I = 20 Adc, I = 200 mAdc)
C
B
Base−Emitter On Voltage (I = 10 Adc, V = 3.0 Vdc)
V
−
−
2.8
4.0
Vdc
Vdc
C
CE
BE(on)
V
BE(sat)
Base−Emitter Saturation Voltage (I = 20 Adc, I = 200 mAdc)
C
B
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product (I = 10 Adc, V = 3.0 Vdc, f = 1.0 MHz)
f
4.0
−
MHz
pF
C
CE
T
Output Capacitance
(V = 10 Vdc, I = 0, f = 0.1 MHz)
C
ob
MJH6284
MJH6287
CB
E
−
−
400
600
Small−Signal Current Gain (I = 10 Adc, V = 3.0 Vdc, f = 1.0 kHz)
h
fe
300
−
−
C
CE
SWITCHING CHARACTERISTICS
Typical
NPN
PNP
Resistive Load
Symbol
Unit
Delay Time
Rise Time
Storage Time
Fall Time
t
0.1
0.1
ms
d
V
= 30 Vdc, I = 10 Adc
= I = 100 mA
B2
t
0.3
1.0
3.5
0.3
1.0
2.0
CC
C
r
I
B1
t
Duty Cycle = 1.0%
s
t
f
1. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS
D , MUST BE FAST RECOVERY TYPES, e.g.:
NPN
MJH6284
PNP
MJH6287
B
C
V
CC
1
30 V
ꢁ1N5825 USED ABOVE I ≈ 100 mA
COLLECTOR
COLLECTOR
B
ꢁMSD6100 USED BELOW I ≈ 100 mA
B
R
C
SCOPE
TUT
V2
R
B
APPROX
+12 V
BASE
BASE
≈ 8.0 k
≈ 50
51
D
1
0
V1
APPROX
+ꢀ4.0 V
−
8.0 V
25 ms
EMITTER
EMITTER
t , t , ≤ 10 ns
for t and t , D is disconnected
r
f
d
r
1
DUTY CYCLE = 1.0%
and V2 = 0
For NPN test circuit reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
Figure 3. Darlington Schematic
http://onsemi.com
2
MJH6284 (NPN), MJH6284 (PNP)
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
P
(pk)
R
R
(t) = r(t) R
q
JC
0.1
0.07
0.05
q
q
JC
0.05
0.02
= 0.78°C/W MAX
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
0.03
0.02
0.01
SINGLE PULSE
t
2
1
T
− T = P
C
R (t)
q
JC
J(pk)
(pk)
DUTY CYCLE, D = t /t
1 2
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20 30
50
100
200 300 500 1000
Figure 4. Thermal Response
FBSOA, FORWARD BIAS SAFE OPERATING AREA
50
0.1 ms
20
10
0.5 ms
1.0 ms
5.0 ms
5.0
dc
2.0
1.0
0.5
T = 150°C
J
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION
0.2
0.1
@T = 25°C (SINGLE PULSE)
C
0.05
2.0
5.0
10
20
50
100
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 5. MJH6284, MJH6287
50
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
40
30
20
10
0
breakdown. Safe operating area curves indicate I − V
C
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
DUTY CYCLE = 10%
The data of Figure 5 is based on T
variable depending on conditions. Second breakdown pulse
= 150_C; T is
J(pk)
C
L = 200 mH
I /I ≥ 100
C B
limits are valid for duty cycles to 10% provided T
T
= 25°C
BE(off)
J(pk)
C
V
R
= 0ꢀ−ꢀ5.0 V
v 150_C. T
may be calculated from the data in
J(pk)
= 47 W
BE
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0
10
20
30
40
60
80
100
110
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 6. Maximum RBSOA, Reverse Bias
Safe Operating Area
http://onsemi.com
3
MJH6284 (NPN), MJH6284 (PNP)
NPN
PNP
3000
2000
5000
V
= 3.0 V
CE
V
= 3.0 V
CE
3000
2000
T = 150°C
J
T = 150°C
J
25°C
1000
25°C
1000
700
500
300
−ꢀ55°C
500
−ꢀ55°C
200
150
300
0.2 0.3
0.5
1.0
2.0 3.0
5.0 7.0 10
20
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 7. DC Current Gain
2.8
2.8
2.6
2.6
2.4
2.2
2.0
1.8
T = 25°C
J
2.4
2.2
2.0
1.8
I
C
= 15 A
I
= 15 A
C
1.6
1.4
1.2
1.0
0.8
1.6
1.4
1.2
1.0
0.8
I
C
= 10 A
I
C
= 10 A
I
C
= 5.0 A
I
= 5.0 A
C
1.0 2.0 3.0 5.0
10
20 30 50
100 200300 500 1000
1.0
2.0 3.0 5.0
10
20 30 50 100 200 300 500 1000
I , BASE CURRENT (mA)
B
I , BASE CURRENT (mA)
B
Figure 8. Collector Saturation Region
3.0
3.0
T = 25°C
T = 25°C
J
J
2.5
2.0
1.5
2.5
2.0
V
@ I /I = 250
C B
BE(sat)
V
@ V = 3.0 V
CE
BE
V
@ V = 3.0 V
CE
1.5
BE(on)
V
@ I /I = 250
C B
BE(sat)
1.0
0.5
1.0
0.5
V
@ I /I = 250
C B
CE(sat)
V
@ I /I = 250
C B
CE(sat)
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 9. “On” Voltages
http://onsemi.com
4
MJH6284 (NPN), MJH6284 (PNP)
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
NOTES:
C
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
Q
B
E
MILLIMETERS
INCHES
MIN MAX
−−− 0.801
DIM MIN
MAX
U
4
A
B
C
D
E
G
H
J
−−− 20.35
14.70
15.20
4.90
1.30
1.37
5.55
3.00
0.78
0.579
0.598
0.193
0.051
0.054
0.219
0.118
0.031
A
4.70
1.10
1.17
5.40
2.00
0.50
0.185
0.043
0.046
0.213
0.079
0.020
L
S
1
2
3
K
K
L
31.00 REF
−−− 16.20
1.220 REF
−−− 0.638
Q
S
U
V
4.00
17.80
4.00 REF
1.75 REF
4.10
18.20
0.158
0.701
0.157 REF
0.069
0.161
0.717
J
H
D
STYLE 1:
PIN 1. BASE
V
2. COLLECTOR
3. EMITTER
4. COLLECTOR
G
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MJH6284/D
相关型号：
©2020 ICPDF网 联系我们和版权申明