MJW21193_10 [ONSEMI]
Silicon Power Transistors; 硅功率晶体管
| 型号： | MJW21193_10 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Power Transistors |
| 文件： | 总7页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJW21193 (PNP)
MJW21194 (NPN)
Silicon Power Transistors
The MJW21193 and MJW21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
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Features
• Total Harmonic Distortion Characterized
• High DC Current Gain −
16 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 200 WATTS
h
= 20 Min @ I = 8 Adc
C
FE
• Excellent Gain Linearity
• High SOA: 2.25 A, 80 V, 1 Second
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
TO−247
CASE 340L
STYLE 3
Symbol
Value
250
400
5.0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage − 1.5 V
V
CEO
V
CBO
1
2
3
V
EBO
V
CEX
400
MARKING DIAGRAM
Collector Current − Continuous
Collector Current − Peak (Note 1)
I
C
16
30
Base Current − Continuous
I
B
5.0
Adc
Total Power Dissipation @ T = 25°C
Derate Above 25°C
P
D
200
1.43
W
W/°C
C
MJW2119x
AYWWG
Operating and Storage Junction
Temperature Range
T , T
−ꢀ 65 to
+150
°C
J
stg
1 BASE
3 EMITTER
2 COLLECTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
R
0.7
°C/W
x
A
Y
= 3 or 4
= Assembly Location
= Year
θ
JC
Thermal Resistance,
Junction−to−Ambient
R
40
°C/W
θ
JA
WW = Work Week
G
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
ORDERING INFORMATION
Device
MJW21193
MJW21193G
Package
Shipping
30 Units/Rail
30 Units/Rail
TO−247
TO−247
(Pb−Free)
MJW21194
TO−247
30 Units/Rail
30 Units/Rail
MJW21194G
TO−247
(Pb−Free)
©
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
March, 2010 − Rev. 4
MJW21193/D
MJW21193 (PNP) MJW21194 (NPN)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I = 100 mAdc, I = 0)
V
250
−
−
−
−
−
−
Vdc
CEO(sus)
C
B
Collector Cutoff Current
(V = 200 Vdc, I = 0)
I
100
100
100
μAdc
μAdc
μAdc
CEO
CE
B
Emitter Cutoff Current
(V = 5 Vdc, I = 0)
I
−
EBO
CE
C
Collector Cutoff Current
(V = 250 Vdc, V
I
−
CEX
= 1.5 Vdc)
BE(off)
CE
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V = 50 Vdc, t = 1 s (non−repetitive)
I
Adc
S/b
4.0
2.25
−
−
−
−
CE
(V = 80 Vdc, t = 1 s (non−repetitive)
CE
ON CHARACTERISTICS
DC Current Gain
h
FE
(I = 8 Adc, V = 5 Vdc)
20
8
−
−
80
−
C
CE
(I = 16 Adc, I = 5 Adc)
C
B
Base−Emitter On Voltage
(I = 8 Adc, V = 5 Vdc)
V
−
−
2.2
Vdc
Vdc
BE(on)
C
CE
Collector−Emitter Saturation Voltage
(I = 8 Adc, I = 0.8 Adc)
V
CE(sat)
−
−
−
−
1.4
4
C
B
(I = 16 Adc, I = 3.2 Adc)
C
B
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
T
%
HD
V
RMS
= 28.3 V, f = 1 kHz, P
= 100 W
h
FE
LOAD
RMS
unmatched
−
0.8
−
(Matched pair h = 50 @ 5 A/5 V)
h
FE
FE
matched
−
0.08
−
−
Current Gain Bandwidth Product
f
T
4
−
MHz
pF
(I = 1 Adc, V = 10 Vdc, f = 1 MHz)
C
CE
test
Output Capacitance
(V = 10 Vdc, I = 0, f = 1 MHz)
test
C
ob
−
−
500
CB
E
PNP MJW21193
NPN MJW21194
6.5
8.0
V
CE
= 10 V
6.0
5.5
5.0
4.5
7.0
6.0
5.0
4.0
10 V
5 V
V
CE
= 5 V
3.0
2.0
1.0
4.0
3.5
T = 25°C
test
T = 25°C
J
test
J
f
= 1 MHz
f
= 1 MHz
3.0
0
0.1
1.0
10
0.1
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
I COLLECTOR CURRENT (AMPS)
C
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
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2
MJW21193 (PNP) MJW21194 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21193
NPN MJW21194
1000
100
10
1000
100
10
T = 100°C
J
T = 100°C
J
25°C
25°C
-ꢁ25°C
-ꢁ25°C
V
CE
= 20 V
V
CE
= 20 V
0.1
1.0
10
100
0.1
1.0
I COLLECTOR CURRENT (AMPS)
C
10
100
I
C
COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain, VCE = 20 V
PNP MJW21193
Figure 4. DC Current Gain, VCE = 20 V
NPN MJW21194
1000
100
10
1000
100
10
T = 100°C
J
T = 100°C
J
25°C
25°C
-ꢁ25°C
-ꢁ25°C
V
CE
= 5 V
V
CE
= 20 V
0.1
1.0
10
100
0.1
1.0
I COLLECTOR CURRENT (AMPS)
C
10
100
I
C
COLLECTOR CURRENT (AMPS)
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
NPN MJW21194
PNP MJW21193
30
35
I
B
= 2 A
1.5 A
I
B
= 2 A
1 A
30
25
20
25
20
1.5 A
1 A
15
10
0.5 A
15
10
0.5 A
5.0
0
5.0
T = 25°C
J
T = 25°C
J
0
0
5.0
10
15
20
25
0
5.0
10
15
20
25
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 7. Typical Output Characteristics
Figure 8. Typical Output Characteristics
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3
MJW21193 (PNP) MJW21194 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21193
NPN MJW21194
3.0
2.5
1.4
1.2
T = 25°C
C B
J
I /I = 10
T = 25°C
C B
J
I /I = 10
1.0
0.8
2.0
1.5
1.0
V
BE(sat)
0.6
0.4
V
BE(sat)
0.5
0
0.2
0
V
CE(sat)
V
CE(sat)
0.1
1.0
10
100
0.1
1.0
10
100
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 9. Typical Saturation Voltages
PNP MJW21193
Figure 10. Typical Saturation Voltages
NPN MJW21194
10
10
1.0
0.1
T = 25°C
J
T = 25°C
J
V
CE
= 20 V (SOLID)
1.0
V
CE
= 5 V (DASHED)
V
CE
= 20 V (SOLID)
V
CE
= 5 V (DASHED)
0.1
0.1
1.0
10
100
0.1
1.0
10
100
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 11. Typical Base−Emitter Voltage
Figure 12. Typical Base−Emitter Voltage
PNP MJW21193
NPN MJW21194
100
10
100
10
10 mSec
10 mSec
100 mSec
100 mSec
1 Sec
1 Sec
1.0
0.1
1.0
0.1
1.0
10
100
1000
1.0
10
V , COLLECTOR EMITTER (VOLTS)
CE
100
1000
V
CE
, COLLECTOR EMITTER (VOLTS)
Figure 13. Active Region Safe Operating Area
Figure 14. Active Region Safe Operating Area
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4
MJW21193 (PNP) MJW21194 (NPN)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I − V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 13 is based on T
= 150°C; T is
J(pk) C
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
C
CE
10000
10000
T
= 25°C
C
T
= 25°C
C
ib
C
C
ib
1000
100
1000
100
C
ob
C
ob
f
= 1 MHz)
(test)
f
= 1 MHz)
(test)
0.1
1.0
10
100
0.1
1.0
10
100
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 15. MJW21193 Typical Capacitance
Figure 16. MJW21194 Typical Capacitance
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
100
1000
FREQUENCY (Hz)
10000
100000
Figure 17. Typical Total Harmonic Distortion
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5
MJW21193 (PNP) MJW21194 (NPN)
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
50 Ω
SOURCE
AMPLIFIER
DUT
ANALYZER
0.5 Ω
0.5 Ω
8.0 Ω
DUT
-50 V
Figure 18. Total Harmonic Distortion Test Circuit
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6
MJW21193 (PNP) MJW21194 (NPN)
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE E
NOTES:
−T−
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
MILLIMETERS
INCHES
DIM MIN
MAX
21.08
16.26
5.30
MIN
MAX
8.30
U
L
A
B
C
D
E
F
20.32
15.75
4.70
1.00
1.90
1.65
0.800
0.620
0.185
0.040
0.075
0.065
N
0.640
0.209
0.055
0.102
0.084
4
A
K
1.40
2.60
−Q−
M
M
0.63 (0.025)
T
B
2.13
1
2
3
G
H
J
5.45 BSC
0.215 BSC
1.50
0.40
19.81
5.40
4.32
---
2.49
0.80
20.83
6.20
5.49
4.50
3.65
0.059
0.016
0.780
0.212
0.170
---
0.098
0.031
0.820
0.244
0.216
0.177
0.144
P
K
L
−Y−
N
P
Q
U
W
3.55
0.140
6.15 BSC
0.242 BSC
2.87
3.12
0.113
0.123
W
J
STYLE 3:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
F 2 PL
H
G
D3 PL
M
S
Y Q
0.25 (0.010)
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MJW21193/D
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