MJW3281A [ONSEMI]
Complementary NPN-PNP Silicon Power Bipolar Transistors; 互补NPN -PNP硅功率双极晶体管
| 型号： | MJW3281A |
| 厂家： | 
ONSEMI |
| 描述： | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| 文件： | 总8页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJW3281A (NPN)
MJW1302A (PNP)
Preferred Devices
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
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The MJW3281A and MJW1302A are PowerBaset power
transistors for high power audio, disk head positioners and other linear
applications.
15 AMPERES
COMPLEMENTARY
SILICON POWER
TRANSISTORS
230 VOLTS
• Designed for 100 W Audio Frequency
• Gain Complementary:
Gain Linearity from 100 mA to 7 A
h
FE
= 45 (Min) @ I = 8 A
C
• Low Harmonic Distortion
• High Safe Operation Area – 1 A/100 V @ 1 Second
200 WATTS
• High f – 30 MHz Typical
T
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Value
230
230
5.0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
V
CEO
V
CBO
V
EBO
1
2
3
TO–247
CASE 340K
STYLE 3
Collector–Emitter Voltage – 1.5 V
V
CEX
230
Collector Current – Continuous
Collector Current – Peak (Note 1)
I
C
15
25
MARKING DIAGRAM
Base Current – Continuous
I
B
1.5
Adc
Total Power Dissipation @ T = 25°C
Derate Above 25°C
P
200
1.43
Watts
W/°C
C
D
MJW
xxxxA
LLYWW
Operating and Storage Junction
Temperature Range
T , T
J
–ā65 to
+150
°C
stg
1 BASE
2 COLLECTOR
MJWxxxxA= Device Code
3 EMITTER
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Case
R
0.7
°C/W
θJC
xxxx
LL
= 3281 OR 1302
= Location Code
= Year
Thermal Resistance,
Junction to Ambient
R
40
°C/W
θJA
Y
WW
= Work Week
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
ORDERING INFORMATION
Device
Package
TO–247
TO–247
Shipping
MJW3281A
MJW1302A
30 Units/Rail
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
March, 2002 – Rev. 1
MJW3281A/D
MJW3281A (NPN) MJW1302A (PNP)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(I = 100 mAdc, I = 0)
V
Vdc
µAdc
µAdc
CEO(sus)
230
–
–
–
–
–
50
5
C
B
Collector Cutoff Current
(V = 230 Vdc, I = 0)
I
CBO
CB
Emitter Cutoff Current
(V = 5 Vdc, I = 0)
E
I
EBO
–
EB
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
C
I
Adc
–
S/b
(V
CE
(V
CE
= 50 Vdc, t = 1 s (non–repetitive)
= 100 Vdc, t = 1 s (non–repetitive)
4
1
–
–
–
–
ON CHARACTERISTICS
DC Current Gain
h
FE
(I = 100 mAdc, V
CE
= 5 Vdc)
50
50
50
50
50
45
12
125
–
–
–
115
–
200
200
200
200
200
–
C
(I = 1 Adc, V
= 5 Vdc)
= 5 Vdc)
= 5 Vdc)
= 5 Vdc)
= 5 Vdc)
C
C
CE
CE
CE
CE
CE
(I = 3 Adc, V
(I = 5 Adc, V
C
(I = 7 Adc, V
C
(I = 8 Adc, V
C
(I = 15 Adc, V
= 5 Vdc)
35
–
C
CE
Collector–Emitter Saturation Voltage
(I = 10 Adc, I = 1 Adc)
V
Vdc
Vdc
CE(sat)
–
–
0.4
–
2
2
C
B
Base–Emitter On Voltage
(I = 8 Adc, V = 5 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current–Gain – Bandwidth Product
f
MHz
pF
T
(I = 1 Adc, V
C CE
= 5 Vdc, f
= 1 MHz)
–
–
30
–
–
test
Output Capacitance
(V = 10 Vdc, I = 0, f
C
ob
= 1 MHz)
600
CB test
E
PNP MJW1302A
NPN MJW3281A
60
50
V
CE
= 10 V
V
CE
= 10 V
50
40
30
20
40
30
20
5 V
5 V
T
= 25°C
= 1 MHz
10
0
T
= 25°C
= 1 MHz
J
J
10
0
f
f
test
test
0.1
1.0
10
0.1
1.0
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
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2
MJW3281A (NPN) MJW1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJW1302A
NPN MJW3281A
1000
1000
25°C
T
= 100°C
J
T
= 100°C
25°C
J
100
100
-ā25°C
-ā25°C
V
CE
= 20 V
V
CE
= 20 V
10
10
0.1
0.1
0
1.0
10
100
100
25
0.1
1.0
10
100
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 3. DC Current Gain, V
= 20 V
Figure 4. DC Current Gain, V
NPN MJW3281A
= 20 V
CE
CE
PNP MJW1302A
1000
1000
25°C
T
= 100°C
J
T
= 100°C
J
25°C
100
100
-ā25°C
-ā25°C
V
CE
= 5 V
V
CE
= 5 V
10
10
0.1
1.0
10
100
1.0
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 5. DC Current Gain, V
PNP MJW1302A
= 5 V
Figure 6. DC Current Gain, V
= 5 V
CE
CE
NPN MJW3281A
45
40
45
40
35
30
25
20
15
10
I
B
= 2 A
1.5 A
I
B
= 2 A
1.5 A
35
30
25
20
15
10
1 A
0.5 A
1 A
0.5 A
5.0
0
T
= 25°C
5.0
0
T
= 25°C
J
J
5.0
10
15
20
0
5.0
10
15
20
25
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 7. Typical Output Characteristics
Figure 8. Typical Output Characteristics
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3
MJW3281A (NPN) MJW1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJW1302A
NPN MJW3281A
2.5
2.0
3.0
2.5
2.0
1.5
1.0
T
= 25°C
I /I = 10
J
T
= 25°C
I /I = 10
J
C B
C B
V
BE(sat)
1.5
1.0
V
BE(sat)
0.5
0
0.5
0
V
V
CE(sat)
CE(sat)
0.1
1.0
10
100
0.1
1.0
10
100
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
PNP MJW1302A
NPN MJW3281A
10
10
T
= 25°C
J
T
= 25°C
J
V
CE
= 5 V (DASHED)
V
V
CE
= 5 V (DASHED)
1.0
1.0
V
CE
= 20 V (SOLID)
= 20 V (SOLID)
CE
0.1
0.1
0.1
1.0
10
100
0.1
1.0
10
100
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 11. Typical Base–Emitter Voltage
Figure 12. Typical Base–Emitter Voltage
PNP MJW1302A
NPN MJW3281A
100
100
10
10 mSec
10 mSec
10
100 mSec
1 Sec
100 mSec
1 Sec
1.0
0.1
1.0
0.1
1.0
10
100
1000
1.0
10
100
1000
V , COLLECTOR EMITTER (VOLTS)
CE
V , COLLECTOR EMITTER (VOLTS)
CE
Figure 13. Active Region Safe Operating Area
Figure 14. Active Region Safe Operating Area
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4
MJW3281A (NPN) MJW1302A (PNP)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I – V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 13 and 14 is based on T
= 150°C;
is variable depending on conditions. At high case
J(pk)
T
C
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
C
CE
TYPICAL CHARACTERISTICS
PNP MJW1302A
NPN MJW3281A
10000
10000
C
ib
C
ib
C
ob
1000
1000
C
ob
T
f
= 25°C
= 1 MHz
T
f
= 25°C
J
J
= 1 MHz
test
test
100
100
0.1
1.0
10
100
0.1
1.0
10
100
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 15. MJW1302A Typical Capacitance
Figure 16. MJW3281A Typical Capacitance
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5
MJW3281A (NPN) MJW1302A (PNP)
PACKAGE DIMENSIONS
TO–247
CASE 340K–01
ISSUE C
–T–
E
–Q–
NOTES:
M
M
0.25 (0.010)
T B
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
–B–
C
4
U
L
MILLIMETERS
DIM MIN MAX
INCHES
MIN
MAX
0.799
0.626
0.209
0.055
A
B
C
D
E
F
19.7
15.3
4.7
20.3 0.776
15.9 0.602
5.3 0.185
1.4 0.039
A
K
R
1.0
1
2
3
1.27 REF
2.0
5.5 BSC
0.050 REF
2.4 0.079
0.094
G
H
J
0.216 BSC
–Y–
2.2
0.4
2.6 0.087
0.8 0.016
14.8 0.559
0.102
0.031
0.583
P
K
L
14.2
5.5 NOM
0.217 NOM
P
Q
R
U
V
3.7
3.55
4.3 0.146
3.65 0.140
0.169
0.144
V
H
5.0 NOM
5.5 BSC
3.0
0.197 NOM
0.217 BSC
0.118 0.134
F
J
G
3.4
D
STYLE 3:
M
S
Q
PIN 1. BASE
2. COLLECTOR
3. EMITTER
0.25 (0.010)
Y
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6
MJW3281A (NPN) MJW1302A (PNP)
Notes
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7
MJW3281A (NPN) MJW1302A (PNP)
PowerBase is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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MJW3281A/D
相关型号：
MJW6678
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