MLP1N06CL [ONSEMI]

SMARTDISCRETES TM MOSFET 1 Amp, 62 Volts, Logic Level N-Channel TO-220; SMARTDISCRETES TM MOSFET 1安培， 62伏特，逻辑电平N沟道TO- 220


型号：	MLP1N06CL
厂家：	ONSEMI
描述：	SMARTDISCRETES TM MOSFET 1 Amp, 62 Volts, Logic Level N-Channel TO-220 SMARTDISCRETES TM MOSFET 1安培， 62伏特，逻辑电平N沟道TO- 220
文件：	总8页 (文件大小：66K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MLP1N06CL

Preferred Device

SMARTDISCRETESt MOSFET

1 Amp, 62 Volts, Logic Level

N–Channel TO–220

These SMARTDISCRETES devices feature current limiting for

short circuit protection, an integral gate–to–source clamp for ESD

protection and gate–to–drain clamp for over–voltage protection. No

additional gate series resistance is required when interfacing to the

output of a MCU, but a 40 kΩ gate pulldown resistor is recommended

to avoid a floating gate condition.

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1 AMPERE

62 VOLTS (Clamped)

= 750 mΩ

The internal gate–to–source and gate–to–drain clamps allow the

devices to be applied without use of external transient suppression

components. The gate–to–source clamp protects the MOSFET input

from electrostatic gate voltage stresses up to 2.0 kV. The gate–to–drain

clamp protects the MOSFET drain from drain avalanche stresses that

occur with inductive loads. This unique design provides voltage

clamping that is essentially independent of operating temperature.

DS(on)

N–Channel

• Temperature Compensated Gate–to–Drain Clamp Limits Voltage

Stress Applied to the Device and Protects the Load From

Overvoltage

• Integrated ESD Diode Protection

• Controlled Switching Minimizes RFI

• Low Threshold Voltage Enables Interfacing Power Loads to

Microprocessors

MARKING DIAGRAM

& PIN ASSIGNMENT

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Drain–to–Gate Voltage

Symbol

Value

Unit

Vdc

Drain

DSS

Clamped

DGR

= 1.0 MΩ)

TO–220AB

CASE 221A

STYLE 5

Gate–to–Source Voltage – Continuous

±10

Vdc

Adc

L1N06CL

LLYWW

Drain Current – Continuous

Drain Current – Single Pulse

Self–limited

1.8

Total Power Dissipation

Watts

Gate

Source

Electrostatic Discharge Voltage

(Human Body Model)

ESD

2.0

Operating and Storage Junction

Temperature Range

T , T

J stg

–50 to 150

°C

Drain

L1N06CL

= Device Code

= Location Code

= Year

THERMAL CHARACTERISTICS

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to

Ambient

3.12

62.5

°C/W

°C

θJC

θJA

= Work Week

ORDERING INFORMATION

Maximum Lead Temperature for

Soldering Purposes, 1/8″ from case

260

Device

MLP1N06CL

Package

Shipping

50 Units/Rail

TO–220AB

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

November, 2000 – Rev. 2

MLP1N06CL/D

MLP1N06CL

UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS

Rating

Symbol

Value

Unit

Single Pulse Drain–to–Source Avalanche Energy

(Starting T = 25°C, I = 2.0 A, L = 40 mH) (Figure 6)

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain–to–Source Sustaining Voltage (Internally Clamped)

Symbol

Min

Typ

Max

Unit

Vdc

µAdc

(BR)DSS

(I = 20 mA, V

= 0)

= 0, T = 150°C)

Zero Gate Voltage Drain Current

DSS

= 45 V, V

= 0)

–

0.6

6.0

5.0

= 0, T = 150°C)

Gate–Body Leakage Current

GSS

(V = 5.0 V, V

= 0)

–

0.5

1.0

5.0

= 0, T = 150°C)

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

Vdc

GS(th)

(I = 250 µA, V

= V

)

1.0

0.6

1.5

–

2.0

1.6

(I = 250 µA, V

= V , T = 150°C)

Static Drain–to–Source On–Resistance

Ohms

DS(on)

(I = 1.0 A, V

= 4.0 V)

= 5.0 V)

= 4.0 V, T = 150°C)

= 5.0 V, T = 150°C)

–

0.63

0.59

1.1

0.75

1.9

(I = 1.0 A, V

1.0

1.8

Forward Transconductance (I = 1.0 A, V

= 10 V)

1.0

–

1.4

1.1

–

mhos

Vdc

Static Source–to–Drain Diode Voltage (I = 1.0 A, V

= 0)

1.5

Static Drain Current Limit

D(lim)

= 5.0 V, V

= 10 V)

= 10 V, T = 150°C)

2.0

1.1

2.3

1.3

2.75

1.8

RESISTIVE SWITCHING CHARACTERISTICS (Note 1.)

Turn–On Delay Time

Rise Time

–

1.2

4.0

3.0

2.0

6.0

5.0

µs

d(on)

= 25 V, I = 1.0 A,

= 5.0 V, R = 50 Ohms)

Turn–Off Delay Time

Fall Time

d(off)

1. Indicates Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

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MLP1N06CL

= 25°C

≥ 7.5 V

-50°C

10 V

6 V

8 V

4 V

25°C

= 150°C

= 3 V

V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)

V , GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 1. Output Characteristics

Figure 2. Transfer Function

THE SMARTDISCRETES CONCEPT

SHORT CIRCUIT PROTECTION AND THE EFFECT OF

TEMPERATURE

From a standard power MOSFET process, several active

and passive elements can be obtained that provide on–chip

protection to the basic power device. Such elements require

only a small increase in silicon area and/or the addition of one

masking layer to the process. The resulting device exhibits

significant improvements in ruggedness and reliability as

well as system cost reduction. The SMARTDISCRETES

device functions can now provide an economical alternative

to smart power ICs for power applications requiring low

on–resistance, high voltage and high current.

These devices are designed for applications that require a

rugged power switching device with short circuit protection

that can be directly interfaced to a microcontroller unit

(MCU). Ideal applications include automotive fuel injector

driver, incandescent lamp driver or other applications where

a high in–rush current or a shorted load condition could occur.

The on–chip circuitry of the MLP1N06CL offers an

integrated means of protecting the MOSFET component

from high in–rush current or a shorted load. As shown in the

schematic diagram, the current limiting feature is provided

by an NPN transistor and integral resistors R1 and R2. R2

senses the current through the MOSFET and forward biases

the NPN transistor’s base as the current increases. As the

NPN turns on, it begins to pull gate drive current through R1,

dropping the gate drive voltage across it, and thus lowering

the voltage across the gate–to–source of the power

MOSFET and limiting the current. The current limit is

temperature dependent as shown in Figure 3, and decreases

from about 2.3 Amps at 25°C to about 1.3 Amps at 150°C.

Since the MLP1N06CL continues to conduct current and

dissipate power during a shorted load condition, it is

important to provide sufficient heatsinking to limit the

device junction temperature to a maximum of 150°C.

The metal current sense resistor R2 adds about 0.4 ohms

to the power MOSFET’s on–resistance, but the effect of

temperature on the combination is less than on a standard

MOSFET due to the lower temperature coefficient of R2.

The on–resistance variation with temperature for gate

voltages of 4 and 5 Volts is shown in Figure 5.

OPERATION IN THE CURRENT LIMIT MODE

The amount of time that an unprotected device can

withstand the current stress resulting from a shorted load

before its maximum junction temperature is exceeded is

dependent upon a number of factors that include the amount

of heatsinking that is provided, the size or rating of the

device, its initial junction temperature, and the supply

voltage. Without some form of current limiting, a shorted

load can raise a device’s junction temperature beyond the

maximum rated operating temperature in only a few

milliseconds.

Even with no heatsink, the MLP1N06CL can withstand a

shorted load powered by an automotive battery (10 to 14

Volts) for almost a second if its initial operating temperature

is under 100°C. For longer periods of operation in the

current–limited mode, device heatsinking can extend

operation from several seconds to indefinitely depending on

the amount of heatsinking provided.

Back–to–back polysilicon diodes between gate and

source provide ESD protection to greater than 2 kV, HBM.

This on–chip protection feature eliminates the need for an

external Zener diode for systems with potentially heavy line

transients.

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MLP1N06CL

= 1 A

Ă=Ă5ĂV

Ă=Ă7.5ĂV

150°C

T Ă=Ă-50°C

25°C

-50

100

150

, GATE-TO-SOURCE VOLTAGE (VOLTS)

T , JUNCTION TEMPERATURE (°C)

Figure 4. R

Variation With

DS(on)

Figure 3. I

Variation With Temperature

D(lim)

Gate–To–Source Voltage

1.25

= 1 A

= 4 V

0.75

V Ă=Ă5 V

0.5

0.25

-50

100

150

T , JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation With

Temperature

100

-50

100

150

100

125

150

T , JUNCTION TEMPERATURE (°C)

Figure 6. Single Pulse Avalanche Energy

versus Junction Temperature

Figure 7. Drain–Source Sustaining

Voltage Variation With Temperature

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MLP1N06CL

FORWARD BIASED SAFE OPERATING AREA

(1.8 A at 150°C) and not the R

. The maximum voltage

can be calculated by the following equation:

DS(on)

The FBSOA curves define the maximum drain–to–source

voltage and drain current that a device can safely handle

when it is forward biased, or when it is on, or being turned

on. Because these curves include the limitations of

simultaneous high voltage and high current, up to the rating

of the device, they are especially useful to designers of linear

systems. The curves are based on a case temperature of 25°C

and a maximum junction temperature of 150°C. Limitations

for repetitive pulses at various case temperatures can be

determined by using the thermal response curves. ON

Semiconductor Application Note, AN569, “Transient

Thermal Resistance – General Data and Its Use” provides

detailed instructions.

(150 – T )

+ R

supply

)

θCA

D(lim) θJC

where the value of R

is being used in the application.

is determined by the heatsink that

θCA

DUTY CYCLE OPERATION

When operating in the duty cycle mode, the maximum

drain voltage can be increased. The maximum operating

temperature is related to the duty cycle (DC) by the

following equation:

= (V

x I x DC x R ) + T

D θCA A

MAXIMUM DC VOLTAGE CONSIDERATIONS

The maximum value of V

applied when operating in a

duty cycle mode can be approximated by:

The maximum drain–to–source voltage that can be

continuously applied across the MLP1N06CL when it is in

current limit is a function of the power that must be

dissipated. This power is determined by the maximum

current limit at maximum rated operating temperature

150 – T

x DC x R

D(lim)

θJC

Ă-ĂMAX

D(lim)

1Ăms

1.5

Ă-ĂMIN

D(lim)

5Ăms

0.6

DEVICE/POWER LIMITED

LIMITED

DS(on)

0.3

0.2

Ă=Ă5ĂV

SINGLE PULSE

= 25°C

0.1

20 30

100

V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 8. Maximum Rated Forward Bias

Safe Operating Area (MLP1N06CL)

1.0

0.7

D = 0.5

(t) = r(t) R

θJC

(t) = 3.12°C/W Max

0.5

θJC

D Curves Apply for Power

0.3

0.2

0.1

Pulse Train Shown

Read Time at t

- T = P

(t)

J(pk)

(pk) θJC

0.1

0.07

0.05

0.02

(pk)

0.03

0.02

0.01

SINGLE PULSE

DUTY CYCLE, D =t /t

1 2

0.01

0.02 0.03 0.05

0.1

0.2 0.3 0.5

1.0

2.0 3.0 5.0

t, TIME (ms)

20 30

100

200 300 500 1000

Figure 9. Thermal Response (MLP1N06CL)

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MLP1N06CL

off

out

d(off)

d(on)

90%

DUT

PULSE GENERATOR

OUTPUT, V

INVERTED

out

z = 50 Ω

10%

gen

50Ω

90%

50%

50 Ω

50%

10%

PULSE WIDTH

INPUT, V

Figure 10. Switching Test Circuit

ACTIVE CLAMPING

Figure 11. Switching Waveforms

MLP1N06CL, the integrated gate–to–source voltage

elements provide greater than 2.0 kV electrostatic voltage

protection.

SMARTDISCRETES technology can provide on–chip

realization of the popular gate–to–source and gate–to–drain

Zener diode clamp elements. Until recently, such features

have been implemented only with discrete components

which consume board space and add system cost. The

SMARTDISCRETES technology approach economically

melds these features and the power chip with only a slight

increase in chip area.

In practice, back–to–back diode elements are formed in a

polysilicon region monolithicly integrated with, but

electrically isolated from, the main device structure. Each

back–to–back diode element provides a temperature

compensated voltage element of about 7.2 volts. As the

polysilicon region is formed on top of silicon dioxide, the

diode elements are free from direct interaction with the

conduction regions of the power device, thus eliminating

parasitic electrical effects while maintaining excellent

thermal coupling.

The avalanche voltage of the gate–to–drain voltage clamp

is set less than that of the power MOSFET device. As soon

as the drain–to–source voltage exceeds this avalanche

voltage, the resulting gate–to–drain Zener current builds a

gate voltage across the gate–to–source impedance, turning

on the power device which then conducts the current. Since

virtually all of the current is carried by the power device, the

gate–to–drain voltage clamp element may be small in size.

This technique of establishing a temperature compensated

drain–to–source sustaining voltage (Figure 7) effectively

removes the possibility of drain–to–source avalanche in the

power device.

The gate–to–drain voltage clamp technique is particularly

useful for snubbing loads where the inductive energy would

otherwise avalanche the power device. An improvement in

ruggedness of at least four times has been observed when

inductive energy is dissipated in the gate–to–drain clamped

conduction mode rather than in the more stressful

gate–to–source avalanche mode.

To achieve high gate–to–drain clamp voltages, several

voltage elements are strung together; the MLP1N06CL uses

8 such elements. Customarily, two voltage elements are used

to provide a 14.4 volt gate–to–source voltage clamp. For the

TYPICAL APPLICATIONS: INJECTOR DRIVER, SOLENOIDS, LAMPS, RELAY COILS

BAT

The MLP1N06CL has been designed to allow direct

interface to the output of a microcontrol unit to control an

isolated load. No additional series gate resistance is

required, but

a 40 kΩ gate pulldown resistor is

recommended to avoid a floating gate condition in the event

of an MCU failure. The internal clamps allow the device to

be used without any external transistent suppressing

components.

MCU

MLP1N06CL

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MLP1N06CL

PACKAGE DIMENSIONS

TO–220 THREE–LEAD

TO–220AB

CASE 221A–09

ISSUE AA

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

SEATING

PLANE

–T–

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.46

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

---

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

---

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.018

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

---

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

---

0.080

2.04

STYLE 5:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

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MLP1N06CL

SMARTDISCRETES is a trademark of Semiconductor Components Industries, LLC (SCILLC).

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or

death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold

SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable

attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

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For additional information, please contact your local

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*Available from Germany, France, Italy, UK, Ireland

MLP1N06CL/D

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MLP1N06CL [ONSEMI]

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